INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 27 April 2017. MIL-PRF-19500/620K 27 January 2017 w/AMENDMENT 1 SUPERSEDING MIL-PRF-19500/620K 25 July 2016 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822, 1N6864, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, Schottky barrier rectifier diodes. Four levels of product assurance(JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500, and two levels of product assurance for die (element evaluation). 1.2 Package outlines and die topography. The device package for the encapsulated device type are as follows: Axial in accordance with figure 1, and surface mount version US in accordance with figure 2. The dimensions and topography for JANHC and JANKC unencapsulated die are as follows: A version die in accordance with figure 3. 1.3 Maximum ratings. Unless otherwise specified, TA = +25C. VRWM (1) (2) IO (1) (2) IFSM ZJX V(pk) A dc A(pk) 1N5822, 1N5822US 40 3.0 1N6864, 1N6864US 80 3.0 Types RJEC TSTG TJ (1) C/W RJL .375 inch (9.52 mm) Lead length C/W C/W C C 80 2.5 30 10 80 2.5 30 10 -65 to +150 -65 to +125 (1) See figures 4, 5, 6, and 7 for derating curves and for effects of VR on TJ. The maximum TJ depends on the voltage applied. (2) TA = 55C for both axial and MELF (US) on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59mm) pad; area of each pad = .4 square inch (258.06 square mm). Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https://assist.dla.mil. AMSC N/A FSC 5961 MIL-PRF-19500/620K w/AMENDMENT 1 1.4 Primary electrical characteristics. Unless otherwise specified, TA = +25C. Types 1N5822 1N5822US 1N6864 1N6864US VFM1 VFM2 VFM3 IFM = 1.0 A IFM = 3.0 A IFM = 9.4 A V (pk) V (pk) V (pk) .40 .40 .50 .50 .50 .50 .70 .70 .70 .70 N/A N/A IRM VRM = 40 V dc (1N5822) VRM = 80 V dc (1N6864) pulsed method (see 4.5.1) TJ = +25C TJ = +100C IRM1 IRM2 mA mA .10 .10 .15 .15 12.5 12.5 18.0 18.0 RJL .375 inch (9.52 mm) Lead length C/W RJEC C/W 30 10 30 10 1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as specified herein. See 6.4 for PIN construction example and 6.5 for a list of available PINs. 1.5.1 JAN certification mark and quality level. 1.5.1.1 Quality level designators for encapsulated devices. The quality level designators for encapsulated devices that are applicable for this specification sheet from the lowest to the highest level are as follows: "JAN", "JANTX", "JANTXV", and "JANS". 1.5.1.2 Quality level designators for unencapsulated devices (die). The quality level designators for unencapsulated devices (die) that are applicable for this specification sheet from the lowest to the highest level are as follows: "JANHC" and "JANKC". 1.5.2 Device type. The designation system for the device types of semiconductors covered by this specification sheet are as follows. 1.5.2.1 First number and first letter symbols. The semiconductors of this specification sheet use the first number and letter symbols "1N". 1.5.2.2 Second number symbols. The second number symbols for the semiconductors covered by this specification sheet are as follows: "5822", and "6864". 1.5.3 Suffix symbols. The following suffix symbols are incorporated in the PIN as applicable. A blank suffix symbol indicates a through-hole mount axial package (see figure 1). US Indicates a surface mount package with square endcaps (see figure 2). 1.5.4 Lead finish. The lead finishes applicable to this specification sheet are listed on QPDSIS-19500. 1.5.5 Die identifiers for unencapsulated devices (manufacturers and critical interface identifiers). The manufacturer die identifier that is applicable for this specification sheet is "A", (see figure 3 and 6.5.1). 2 MIL-PRF-19500/620K w/AMENDMENT 1 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http://quicksearch.dla.mil.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3 MIL-PRF-19500/620K w/AMENDMENT 1 Dimensions Symbol Inches Millimeters Min Max Min Max BD .115 .145 2.92 3.68 BL .130 .195 3.30 4.95 LD .036 .042 0.91 1.07 LL .900 1.300 22.86 33.02 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions of 1N5822 and 1N6864. 4 MIL-PRF-19500/620K w/AMENDMENT 1 US Dimensions Symbol Inches Millimeters Min Max Min Max BD .137 .148 3.48 3.76 BL .200 .225 5.08 5.72 ECT .019 .028 0.48 0.71 S .003 0.08 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions of surface mount family, 1N5822US and 1N6864US. 5 MIL-PRF-19500/620K w/AMENDMENT 1 Dimensions Symbol Inches Millimeters Min Max Min Max A .062 .064 1.57 1.63 B .052 .054 1.32 1.37 Design data Metallization: Top: (Anode) Back: (Cathode) Al thickness Gold thickness Chip thickness Al Au 25,000 A minimum. 4,000 A minimum. .010 inch (0.254 mm) .002 (.051 mm). FIGURE 3. JANC (A-version) die dimensions. 6 MIL-PRF-19500/620K w/AMENDMENT 1 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (axial leads), 2 (surface mount), and 3 (die). 3.4.1 Lead material and finish. Lead material shall be copper clad steel with a minimum of 70 percent copper by weight. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. These devices shall be metallurgically bonded-thermally-matched-noncavity-double plug construction, utilizing a category I or III bond, in accordance with MIL-PRF-19500, except for JANHC and JANKC. 3.4.2.1 Surface mount. The surface mount US version shall be considered structurally identical to the non-surface mount version except for lead attach. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. No color coding shall be permitted for part numbering. 3.5.1 Marking for surface mount (US) devices. For US version devices only, all marking, except polarity may be omitted from the body. Polarity marking of US devices shall consist of as a minimum, a band or three contrasting dots around the periphery of the cathode. At the option of the manufacturer, US surface mount devices may include laser marking on an end-cap, to include part number and lot date code for all levels. JANS devices which are laser marked shall also include serialization. The prefixes JAN, JANTX, JANTXV, or JANS may be abbreviated as J, JX, JV, or JS, respectively. (Example: The part number may be reduced to JS5822). All marking, except for serial number and polarity shall appear on the initial container. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I herein). 7 MIL-PRF-19500/620K w/AMENDMENT 1 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or requalification only. In case qualification was awarded to a prior revision of the specification sheet that did not require the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.2 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be in accordance with MIL-PRF-19500. This testing may be performed in a TO-5 package in lieu of the axial leaded package. 4.3 Screening. 4.3.1 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen JANS level 2 JANTXV and JANTX level Not required Not required Not applicable Required (see 4.3.3) Not applicable Required (see 4.3.3) Not applicable Not applicable 8 Required Not required 9 Required IR1 and VFM2 Not applicable Required 1N5822, TA = +90C; VRWM = 40 V(pk); 1N6864, TA = +80C; VRWM = 80 V(pk); VRWM = half sine wave, f = 60Hz Required 1N5822, TA = +90C; VRWM = 40 V(pk); 1N6864, TA = +80C; VRWM = 80 V(pk); VRWM = half sine wave, f = 60Hz 11 Required IR1 100 percent of initial reading or 0.05 mA whichever is greater; VFM2 50 mV dc. Required IR1 and VFM2 12 See 4.3.2 t = 96 hours. See 4.3.2 13 Required Subgroup 2 of table I herein; IR1 100 percent of initial reading or 0.05 mA whichever is greater; VFM2 50 mV dc Required Subgroup 2 of table I herein; IR1 100 percent of initial reading or 0.05 mA whichever is greater; VFM2 50 mV dc 3b (1) 3c 4, 5, and 6 (2) 10 (1) Thermal impedance shall be performed anytime after temperature cycling, screen 3a, JANTX and JANTXV levels do not need to be repeated in screening requirements. (2) Junction temperature (TJ) is not to exceed 115C at VRWM. TJ is affected by the device mounting thermal resistance when parasitic power is generated by the temperature dependent leakage current. Until this leakage becomes significant near thermal runaway, TJ remains approximately equal to TA or TJ for IO = 0. 8 MIL-PRF-19500/620K w/AMENDMENT 1 4.3.1.1 JAN testing. JAN level product will have temperature cycling and thermal impedance testing performed in accordance with MIL-PRF-19500, JANTX level screening level requirements. Electrical testing shall be in accordance with table I, subgroup 2 herein. 4.3.2 Burn-in conditions. Burn-in conditions are as follows: IF = 3.0 A dc (min). Mounting and test conditions shall be in accordance with method 1038 of MIL-STD-750, test condition B. 4.3.3 Thermal impedance measurements. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750, as applicable, using the guidelines in that method for determining IH and IM. The thermal impedance limit (ZJX) shall be less than the process determined statistical maximum limit as outlined in method 3101 or 4081 of MIL-STD-750, as applicable. See group E, subgroup 4 of table II herein. 4.3.4 Screening (JANHC or JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a minimum, die shall be 100-percent probed in accordance with table I, subgroup 2, except for thermal impedance. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I herein. The following test conditions shall be used for ZJX, group A inspection: a. IM measurement current: 1 mA to 10 mA. b. IH forward heating current: 3A. c. tH heating time: 10 ms. d. tMD measurement delay time: 70 s maximum. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIa and E-VIb (JANS, JANTXV, JANTX, and JAN) of MIL-PRF-19500 and as follows. * 4.4.2.1 Quality level JANS (see table E-VIA of MIL-PRF-19500. * Subgroup Method Condition B3 1056 0C to 100C, 25 cycles, n = 22, c = 0. B3 1051 -55 C to 150C, 100 cycles, n = 22, c = 0. B3 4066 IFSM = 80 A (pk), condition A 2, IO = 3 A dc; TA = room ambient as defined in 4.5 of MIL-STD-750; five surges of 8.3 ms each at 1 minute intervals. B4 1037 IF = 3.0 A dc; TA = room ambient as defined in the general requirements of MIL-STD-750; ton = toff = 3 minutes minimum for 2,000 cycles. B5 1026 IF = 3 A dc minimum, adjust IF or TA to achieve TJ = +125C minimum. 9 MIL-PRF-19500/620K w/AMENDMENT 1 * 4.4.2.2 Quality levels JAN, JANTX and JANTXV (see table E-VIB of MIL-PRF-19500). Subgroup * Method Condition B2 1056 0C to 100C, 10 cycles, n = 22, c = 0. B2 1051 -55C to 150C, 25 cycles, n = 22, c = 0. B2 4066 IFSM = 80 A (pk), condition A 2, IO = 3 A dc; TA = room ambient as defined in 4.5 of MIL-STD-750; five surges of 8.3 ms each at 1 minute intervals. B3 1027 IF = 3 A dc minimum, adjust IF or TA to achieve TJ = +125C. B4 2075 As applicable. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. * Subgroup Method Condition C2 2036 Axial devices: Tension: Test condition A; weight = 20 pounds (9 Kg); t = 15 seconds. Lead fatigue: Test condition E; weight 1 pound (0.45 Kg). C2 2038 US devices: Test condition B; weight = 20 pounds (9 Kg); t = 15 seconds. C5 4081 See 4.4.5 herein. C6 1027 IF = 3 A dc minimum, adjust IF or TA to achieve TJ = +125C minimum. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-IX of MIL-PRF-19500, and table II herein. 4.4.5 Thermal resistance. Thermal resistance measurement shall be in accordance with method 3101 or 4081 of MIL-STD-750. Forced moving air or draft shall not be permitted across the device during test. The maximum limit for RJL under these test conditions shall be RJL (max) = 30C/W, RJEC (max) = 10C/W. The following conditions shall apply when using method 3101: a. IM: 1mA to 10mA. b. IH: 3A minimum. c. tH: 25 seconds minimum. d. tMD: 70 s maximum. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Steady-state operation life. This test shall be conducted with a half-sine wave of the specified peak voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average rectified current. The forward conduction angle of the rectified current shall not be greater than 180 degrees nor less than 150 degrees. 10 MIL-PRF-19500/620K w/AMENDMENT 1 TABLE I. Group A inspection. MIL-STD-750 Limits Symbol Inspection 1/ Method Conditions Unit Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 2.5 C/W 0.40 0.50 V V VFM2 0.50 0.70 V V VFM3 0.70 V 0.10 0.15 mA mA 12.5 18.0 mA mA 0.47 0.65 V V 0.40 0.55 mA mA 0.62 0.80 V V Thermal impedance 2/ 3101 See 4.3.3 ZJX Forward voltage 1N5822, 1N5822US 1N6864, 1N6864US 4011 Condition B, IFM = 1.0 A (pk) pulse method (see 4.5.1) VFM1 1N5822, 1N5822US 1N6864, 1N6864US 4011 1N5822, 1N5822US 4011 Condition B, IFM = 3.0 A (pk) pulse method (see 4.5.1) Condition B, IFM = 9.4 A (pk) pulse method (see 4.5.1) Reverse current leakage 1N5822, 1N5822US 1N6864, 1N6864US 4016 VRM = 40 V (pk) pulse method VRM = 80 V (pk) pulse method (see 4.5.1) IRM1 Subgroup 3 High temperature operation: TA = +100C Reverse current leakage 1N5822, 1N5822US 1N6864, 1N6864US 4016 Forward voltage 1N5822, 1N5822US 1N6864, 1N6864US 4011 Low temperature operation: Reverse current leakage 1N5822, 1N5822US 1N6864, 1N6864US Forward voltage 1N5822, 1N5822US 1N6864, 1N6864US VRM = 40 V (pk) pulse method VRM = 80 V (pk) pulse method (see 4.5.1) Condition B, IF = 3.0 A (pk) pulse method (see 4.5.1) IRM2 VFM4 TA = -55C 4016 VRM = 40 V (pk) pulse method VRM = 80 V (pk) pulse method (see 4.5.1) 4011 Condition B, IF = 3.0 A (pk) pulse method (see 4.5.1) Subgroup 4, 5, 6, and 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 2/ This test required for the following end-point measurements only: Group B, subgroups 3, 4 and 5 (JANS). Group B, subgroups 2 and 3 (JAN, JANTX, JANTXV). Group C, subgroups 2 and 6. Group E, subgroup 1. 11 IRM3 VFM5 MIL-PRF-19500/620K w/AMENDMENT 1 TABLE II. Group E inspection (all quality levels) for qualification and requalification. MIL-STD-750 Inspection Method Conditions Sampling plan n = 45, c=0 Subgroup 1 Temperature cycling 1051 -65C to 150C, 500 cycles Hermetic seal 1071 Test condition E Electrical measurement See table I, subgroup 2 Subgroup 2 Intermittent Operating Life 1036 Electrical measurement 10,000 cycles n = 22, c=0 See table I, subgroup 2 Subgroup 4 Thermal impedance curves See MIL-PRF-19500 Subgroup 5 Not applicable Subgroup 6 ESD 1020 Subgroup 8 Resistance to glass cracking n = 45 1057 Test to destruction or 25 cycles max, whichever comes first. 12 MIL-PRF-19500/620K w/AMENDMENT 1 NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. This temperature-current derating curve varies with applied voltage. FIGURE 4. Temperature-current derating for 1N5822. 13 MIL-PRF-19500/620K w/AMENDMENT 1 NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. This temperature-current derating curve varies with applied voltage. FIGURE 5. Temperature-current derating for 1N5822US. 14 MIL-PRF-19500/620K w/AMENDMENT 1 NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. This temperature-current derating curve varies with applied voltage. FIGURE 6. Temperature-current derating for 1N6864. 15 MIL-PRF-19500/620K w/AMENDMENT 1 NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. This temperature-current derating curve varies with applied voltage. FIGURE 7. Temperature-current derating for 1N6864US. 16 MIL-PRF-19500/620K w/AMENDMENT 1 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or within the Military Service's system commands. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory. The notes specified in MIL-PRF-19500 are applicable to this specification.) 6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design applications and logistic support of existing equipment. 6.2 Acquisition requirements. The acquisition requirements should specify the following. a. Title, number, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). d. The complete Part or Identifying Number (PIN), see 1.5 and 6.4. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from DLA Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at https://assist.dla.mil. 17 MIL-PRF-19500/620K w/AMENDMENT 1 6.4 PIN construction example. 6.4.1 Encapsulated devices The PINs for encapsulated devices are constructed using the following form. JANTX 1N 5822 US JAN certification mark and quality level (see 1.5.1) First number and first letter symbols (see 1.5.2.1) Second number symbols (see 1.5.2.2) Suffix symbol, if applicable (see 1.5.3) 6.4.2 Un-encapsulated devices. The PINs for un-encapsulated devices are constructed using the following form. JANHC A 1N 5822 JAN certification mark and quality level (see 1.5.1.2) Die identifier for unencapsulated devices (see 1.5.5) First number and first letter symbols (see 1.5.2.1) Second number symbols (see 1.5.2.2) 6.5 List of PINs for encapsulated devices. The following is a list of possible PINs available on this specification sheet for encapsulated devices. PINs Axial Package JAN1N5822 JANTX1N5822 JANTXV1N5822 JANS1N5822 JAN1N6864 JANTX1N6864 JANTXV1N6864 JANS1N6864 US Package JAN1N5822US JANTX1N5822US JANTXV1N5822US JANS1N5822US JAN1N6864US JANTX1N6864US JANTXV1N6864US JANS1N6864US 6.5.1 List of PINs for unencapsulated devices. The following is a list of possible PINs available on this specification sheet for unencapsulated die. The qualified JANHC and JANKC suppliers with the applicable letter version (example, JANHCA1N5822) will be identified on the QML. PIN JANHC and JANKC ordering information Manufacturer 43611 1N5822 JANHCA1N5822, JANKCA1N5822 1N6864 JANHCA1N6864, JANKCA1N6864 18 MIL-PRF-19500/620K w/AMENDMENT 1 6.6 Applications data. 6.6.1 Square-wave application with 1N5822US. For a printed board mounting example with FR4 base material to support a 2 amp IO square wave switching at a 0.50 duty factor (50 percent duty cycle) at TJ = 100C and ambient temperature of 55C, the following steps guide the user in calculating what the printed board copper mounting pad size needs to be with 1 ounce, 2 ounce, and 3 ounce copper foil. a. Locate the size of copper mounting pads on standard FR-4 base material to support operation at 2 A IO square wave switching at a 0.50 duty factor (50 percent duty cycle) at TJ = 100C with TA = 50C. b. Calculate peak IF = 2 A / 0.50 duty factor = 4 A. c. Use the VF versus IF curve on figure 8 and figure 9 to look up IF = 4 A (Y-axis) and follow across to the TJ = 100C curve (middle) for VF = 0.39 V. d. Calculate power = IF * VF * duty factor = 4 * 0.39 * 0.50 = 0.78 W. e. Calculate maximum thermal resistance needed (100C - 50C) / 0.78 W = 64C/W. f. Locate the thermal resistance of 64C/W on the Y-axis using a thermal resistance versus copper mounting pad area plot on one of the three curves on figure 10 for different weights of copper foil and then intersect curve horizontally determine the answer. Curves assume still air and horizontal printed board position. g. In this example, the copper mounting pad sizes for the different copper foil weights would be as follows: 1) .026 inch2 (16.77 mm2) for 1 ounce copper foil. 2) .16 inch2 (103.23 mm2) for 2 ounce copper foil. 3) .1 inch2 (64.52 mm2) for 3 ounce copper foil. h. A conservative pad guard-band is optional since TJ 125C. Multilayer printed boards or forced air cooling will improve performance. Closed confinement of the printed board will do the opposite. 19 MIL-PRF-19500/620K w/AMENDMENT 1 0.00 0.10 SchottkyVVf-If Schottky f - ICharacteristics f Characteristics 1N5822 40V Glass Schottky 1N5822 0.20 0.30 0.40 0.50 0.60 10 1 0.1 0.01 If (A) 150 C 125 C 0.001 100 C 75 C 50 C 0.0001 25 C 0 C -25 C 0.00001 -50 C 0.000001 0.0 0.10 Vf (V) 0.30 0.20 Vf (v) FIGURE 8. VF versus IF Curve. 20 0.40 0.50 0.60 MIL-PRF-19500/620K w/AMENDMENT 1 0.00 0.10 Schottky Vf-If Characteristics Schottky Vf 80V - IGlass f Characteristics 1N6864 Schottky 0.20 0.301N68640.40 0.50 0.60 0.70 10 1 0.1 0.01 If (A) 150 C 125 C 0.001 100 C 75 C 50 C 0.0001 25 C 0 C -25 C 0.00001 -50 C 0.000001 0.0 0.10 0.20 Vf (V) 0.30 0.40 Vf (v) FIGURE 9. VF versus IF Curve. 21 0.50 0.60 0.70 MIL-PRF-19500/620K w/AMENDMENT 1 AXIAL / US THERMAL RESISTANCE versus FR4 PAD AREA STILL AIR with the PCB HORIZONTAL Still Air, PCB Horizontal B-Pkg/E-Pkg MELF/Axial Thermal Resistance vs FR4 Pad Area Thermal Resistance (C/W) 1000 100 1oz Foil 2oz Foil 3oz Foil 10 0.001 0.01 0.1 1 10 Pad Area per Pad (in2) FIGURE 10. Thermal resistance calculator (Junction to Ambient on PCB). 22 100 MIL-PRF-19500/620K w/AMENDMENT 1 6.7 Request for new types and configurations. Requests for new device types or configurations for inclusions in this specification sheet should be submitted to: DLA Land and Maritime, ATTN: VAC, Post Office Box 3990, Columbus, OH 43218-3990 or by electronic mail at Semiconductor@dla.mil or by facsimile (614) 693-1642 or DSN 850-6939. * 6.8 Amendment notations. The margins of this specification are marked with asterisks to indicate modifications generated by this amendment. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 85 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2017-017) Review activities: Army - AR, MI, SM Navy - AS, MC Air Force - 19, 99 NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at https://assist.dla.mil. 23