JANTXV1N5822US - SEMTECH INTERNATIONAL

MIL-PRF-19500/620K

27 January 2017

w/AMENDMENT 1

SUPERSEDING

MIL-PRF-19500/620K

25 July 2016

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILI CON, RECTIFIER,

SCHOTTKY BARRIER, TYPES 1N5822, 1N6864,

JAN, JANTX, JANTXV, JANS , JANHC, AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

The requirements for acquiring the product described herein

shall consist of this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for silicon, Schottky barrier rectifier diodes.

Four levels of product assurance(JAN, JANTX, JANTXV, and JANS) are provided for each dev ice ty pe as specifie d in

MIL-PRF-19500, and two levels of product assur an ce for die (elem ent ev aluation).

1.2 Package outlines and die topography. The device package for the encapsulated device type are as follows:

Axial in accordance with figure 1, and surface mount version US in accordance with figur e 2 . The dimensions and

topography for JANHC and JANKC unencapsulated die are as follows: A version die in acc ordance with figure 3.

1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.

Types VRWM

(1) (2) IO

(1) (2) IFSM ZθJX RθJL

.375 inch

(9.52 mm)

Lead length

RθJEC TSTG TJ (1)

V(pk)

A dc

A(pk)

°C

W °C

°C

1N5822, 1N5822US

3.0

2.5

-65 to

+150

-65 to

+125

1N6864, 1N6864US

3.0

2.5

(1) See figures 4, 5, 6, and 7 for derating curves and for effects of VR on TJ. The maximum TJ depends on the

voltage applied .

(2) TA = 55°C for both axial and MELF (US) on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59mm) pad;

area of each pad = .4 square inch (258.06 square mm).

AMSC N/A FSC 5961

INCH-POUND

Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN:

VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductor@dla.mil. Since contact

information can change, you may want to verify the currency of this address information using the ASSIST

Online databas e at https://assist.dla.mil.

The documentation and process conversion measures

necessary to comply with this document shall be

completed by 27 April 2017.

MIL-PRF-19500/620K

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1.4 Primary electrical chara ct erist ic s. Unless otherwise specified, TA = +25°C.

Types

VFM1

IFM =

1.0 A

VFM2

IFM =

3.0 A

VFM3

IFM =

9.4 A

VRM = 40 V dc (1N5822)

VRM = 80 V dc (1N6864)

pulsed method (see 4.5.1)

RθJL

.375 inch

(9.52 mm)

Lead length RθJEC

= +25°C

RM1

= +100°C

RM2

1N5822

1N5822US

1N6864

1N6864US

V (pk)

.40

.50

V (pk)

.50

.70

V (pk)

.70

N/A

.10

.15

12.5

18.0

°C/W

1.5 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-19500, and as specified herein.

See 6.4 for PIN construction example and 6.5 for a list of available PINs.

1.5.1 JAN certification mark and quality level.

1.5.1.1 Quality level designators for encapsulated devices. The quality level designators for encapsulated devices

that are applicable for this specification sheet from the lowest to the highest level are as follows: "JAN", "JANTX",

"JANTXV", and "JANS".

1.5.1.2 Quality level designators for unencapsulated devices (die). The quality level designators for

unencapsulated devices (die) that are applicable for this specification sheet from the lowest to the highest level are as

follows: "JANHC" and "JANKC".

1.5.2 Dev ice ty pe. The designation system for the device types of semiconductors covered by this specification

sheet are as follow s.

1.5.2.1 First number and first letter symbols. The semiconductors of this specification sheet use the first number

and letter symbols "1N".

1.5.2.2 Second number symbols. The second number symbols for the semiconductors covered by this

specification sheet are as follows: "5822", and "6864".

1.5.3 Suffix symbols. The following suffix symbols are incorporated in the PIN as applicable.

A blank suffix symbol indicates a through-hole mount axial package (see figure 1).

US Indicates a surface mount package with square endcaps (see figure 2).

1.5.4 Lead finish. The lead finishes applicable to this specification sheet are listed on QPDSIS-19500.

1.5.5 Die identifiers for unencapsulated devices (manufacturers and critical interface identifiers). The

manufact urer die ide ntifier that is applicabl e for this specification sheet is "A", (see figure 3 and 6.5.1).

MIL-PRF-19500/620K

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2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this s peci fic atio n. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this

specification, whether or not they are listed.

2.2 Govern ment do cum ent s.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Un les s otherwise specif ied, the is sue s of these docum ent s are

those cited in the solici tation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Copies of these documents are available online at http://quicksearch.dla.mil.)

2.3 Order of preceden ce. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

MIL-PRF-19500/620K

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Dimensions

Symbol Inches Millimeters

Min

Max

Min

Max

.115 .145 2.92 3.68

BL .130 .195 3.30 4.95

.036 .042 0.91 1.07

.900 1.300 22.86 33.02

NOTES:

1. Dim ensions are in inches.

2. Millimeter s are given for gener al infor mat ion only .

3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

FIGURE 1. Physical dimensions of 1N5822 and 1N6864.

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Symbol Dimensions

Inches Millimeters

Min Max Min Max

BD .137 .148 3.48 3.76

BL .200 .225 5.08 5.72

ECT .019 .028 0.48 0.71

S .003 0.08

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only .

3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

FIGURE 2. Physical dimensions of surface mount family, 1N5822US and 1N6864US.

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Symbol

Dimensions

Inches Millimeters

Min Max Min Max

A .062 .064 1.57 1.63

B .052 .054 1.32 1.37

Design data

Metallization:

Top: (Anode) Al

Back: (Cathode) Au

Al thickness 25,000 Å minimum.

Gold thickness 4,000 Å minimum.

Chip thickness .010 inch (0.254 mm) ± .002 (±.051 mm).

FIGURE 3. JANC (A-version) die dimension s.

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3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbrev ia t io ns, symbol s, and definition s used herein shall be as

specified in MIL-PRF-19500.

3.4 Interfa ce and physi cal dim ensi ons . Interface and phy si c al dimen si ons shall be as spec ified in

MIL-PRF-19500, and on figures 1 (axial leads), 2 (surface mount), and 3 (die).

3.4.1 Lead material and finish. Lead material shall be copper clad steel with a minimum of 70 percent copper by

weight. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a

choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.4.2 Diode construction. These devices shall be metallurgically bonded-thermally-matched-noncavity-dou ble plu g

construction, utilizing a category I or III bond, in accordance with MIL-PRF-19500, except for JANHC and JANKC.

3.4.2.1 Surface mount. The surface mount US version shall be considered structurally identical to the non-surface

mount version except for lead attach.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. No color coding shall be permitted for part

numbering.

3.5.1 Marking for surface mount (US) devices. For US version devices only, all marking, except polarity may be

omitted fr om the body . Polarity marking of US devices shall consist of as a minimum, a band or three contrasting

dots around the periphery of the cathode. At the option of the manufacturer, US surface mount devices may include

laser marking on an end-cap, to include part number and lot date code for all levels. JANS device s w hich are laser

marked shall also include serialization. The prefixes JAN, JANTX, JANTXV, or JANS may be abbreviated as J, JX,

JV, or JS, respectively. (Example: The part number may be reduced to JS5822). All marking, except for serial

number and polarity shall appear on the initial container.

3.6 Electrica l per for man ce ch aracteristic s. Un less otherwis e speci fied here in, the ele ctrical perform anc e

characteristics are as specified in 1.3, 1.4, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classifi cat ion of insp ect ions. The ins pec tion requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and table I herein).

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4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 Group E qualifi cat ion. Group E inspection shall be performed for qua lifi cat ion or requalification only. In ca se

qualification was awarded to a prior revision of the specification sheet that did not require the performance of table II

tests, the tests specified in table I I herein that were not performed in the prior revision shall be performed on the first

inspection lot of this revision to maintain qualification.

4.2.2 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be in accordance with

MIL-PRF-19500. This testing may be performed in a TO-5 package in lieu of the axial leaded package.

4.3 Screening.

4.3.1 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein sha ll not be accep tab le.

Screen Measurement

JANS level JANTXV and JANTX level

Not required

(1) 3c Not applicable

Required (see 4.3.3) Not applicable

Required (see 4.3.3)

4, 5, and 6 Not applicable Not applicable

8 Required Not required

9 Required

IR1 and VFM2 Not applicable

(2) 10

Required

1N5822, TA = +90°C; VRWM = 40 V(pk);

1N6864, TA = +80°C; VRWM = 80 V(pk);

VRWM = half sine wave, f = 60 Hz

Required

1N5822, TA = +90°C; VRWM = 40 V(pk);

1N6864, TA = +80°C; VRWM = 80 V(pk);

VRWM = half sine wave, f = 60 Hz

Required

∆IR1 ≤ 100 percent of initial reading or

0.05 mA whichever is great er;

∆VFM2 ≤ ±50 mV dc.

Required

IR1 and VFM2

12 See 4.3.2 t = 96 hours. See 4.3.2

Required

Subgroup 2 of table I herein;

∆IR1 ≤ 100 percent of initial reading or

0.05 mA whichever is great er;

∆VFM2 ≤ ±50 mV dc

Required

Subgroup 2 of table I herein;

∆IR1 ≤ 100 percent of initial reading or

0.05 mA whichever is great er;

∆VFM2 ≤ ±50 mV dc

(1) Thermal impedance shall be performed anytime after temperature cycling, screen 3a, JANTX and JANTXV

levels do not need to be repeated in screening requirements.

(2) Junction temperature (TJ) is not to exceed 115°C at VRWM. TJ is affected by the device mounting thermal

resistance when parasitic power is generated by the temperature dependent leakage current. Until this leakage

becomes significant near thermal runaway, TJ remains approximately equal to TA or TJ for IO = 0.

MIL-PRF-19500/620K

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4.3.1.1 JAN testing. JAN level product will have temperature cycling and thermal impedance testing performed in

accordance with MIL-PRF-19500, JANTX level screening level requirements. Electrical testing shall be in

accordance with table I, subgroup 2 herein.

4.3.2 Burn-in conditions. Burn-in conditions are as follows: IF = 3.0 A dc (min). Mounting and test conditions shall

be in accordance with method 1038 of MIL-STD-750, test condition B.

4.3.3 Thermal impedance measurements. The thermal impedance measurements shall be performed in

accordance with method 3101 or 4081 of MIL-STD-750, as applicable, using the guidelines in that method for

determining IH and IM. The thermal impedance limit (ZθJX) shall be less than the process determined statistical

maximum limit as outlined in method 3101 or 4081 of MIL-STD-750, as applicable. See group E, subgroup 4 of table

II herein.

4.3.4 Screening (JANHC or JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a

minimum , die shall be 100-percent probed in accordance with table I, subgroup 2, except for thermal impedance.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.4.1 Group A inspe ctio n. Group A inspection shall be conducted in accordance with table E-V of

MIL-PRF-19500, and table I herein. The following test conditions shall be used for ZθJX, group A inspection:

a. IM measurem ent curre nt: 1 mA to 10 mA.

b. IH forwar d heating curre nt : 3A.

c. tH heating time: 10 ms.

d. tMD meas urement delay time: 70 µs maximum.

4.4.2 Group B inspe ctio n. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup test ing in tables E-VIa and E-VIb (JANS, JANTXV, JANTX, and JAN) of MIL-PRF-19500 and as follows.

* 4.4.2.1 Quality level JANS (see table E-VIA of MIL-PRF-19500.

Subgroup Method Condition

* B3 1056 0°C to 100°C, 25 cycles, n = 22, c = 0.

B3 1051 -55 °C to 150°C, 100 cycles, n = 22, c = 0.

B3 4066 IFSM = 80 A (pk), condition A 2, IO = 3 A dc; TA = room ambient as defined in 4.5

of MIL-STD-750; five surges of 8.3 ms each at 1 minute inter v als.

B4 1037 IF = 3.0 A dc ; TA = room ambient as defined in the general requirements of

MIL-STD-750; ton = toff = 3 minutes minimum for 2,000 cycles.

B5 1026 IF = 3 A dc minimum, adjust IF or TA to achieve TJ = +125°C minimum.

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* 4.4.2.2 Quality levels JAN, JANTX and JANTXV (see table E-VIB of MIL-PRF-19500).

Subgroup Method Condition

* B2 1056 0°C to 100°C, 10 cycles, n = 22, c = 0.

B2 1051 -55°C to 150°C, 25 cycles, n = 22, c = 0.

B2 4066 IFSM = 80 A (pk), condition A 2, IO = 3 A dc; TA = room ambient as defined in 4.5

of MIL-STD-750; five surges of 8.3 ms each at 1 minute inter v als.

B3 1027 IF = 3 A dc minimum, adjust IF or TA to achieve TJ = +125°C.

B4 2075 As applicable.

4.4.3 Group C inspect ion . Group C inspection shall be conducted in accordance with the conditions specified for

subgroup test ing in table E-VII of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Axial devices: Tension: Test condition A; weight = 20 pounds (9 Kg); t = 15 seconds.

Lead fatigue: Test condition E; weight 1 pound (0.45 Kg).

* C2 2038 US devices: Test con dit ion B; weight = 20 pounds (9 Kg); t = 15 seconds.

C5 4081 See 4.4.5 herein.

C6 1027 IF = 3 A dc minimum, adjust IF or TA to achieve TJ = +125°C minimum.

4.4.4 Group E inspe ctio n. Group E inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-IX of MIL-PRF-19500, and table II herein.

4.4.5 Thermal resistance. Thermal resistance measurement shall be in accordance with method 3101 or 4081 of

MIL-STD-750. Forced moving air or draft shall not be permitted across the device during test. The maximum lim it for

RθJL under these test conditions shall be RθJL (max) = 30°C/W, RθJEC (max) = 10°C/W. The following cond iti ons

shall apply when using method 3101:

a. IM: 1mA t o 10mA.

b. IH: 3A minimum.

c. tH: 25 seconds minimum.

d. tMD: 70 µs maximum.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Steady-state operation life. This test shall be conducted with a half-sine wave of the specified peak voltage

impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average

rectified current. The forward conduction angle of the rectified current shall not be greater than 180 degrees nor less

than 150 degrees.

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TABLE I. Group A inspection.

Inspecti on 1/ MIL-STD-750 Symbol Limits Unit

Method Conditions Min Max

Subgroup 1

Visual and mechanical

examination

2071

Subgroup 2

Thermal impedance 2/

3101

See 4.3.3

θJX

2.5

°C/W

Forward voltage

1N5822, 1N5822US

1N6864, 1N6864US

4011

Condition B, I

= 1.0 A (pk) pulse

method (see 4.5.1)

FM1

0.40

0.50

1N5822, 1N5822US

1N6864, 1N6864US

4011

Condition B, I

= 3.0 A (pk) pulse

method (see 4.5.1)

FM2

0.50

0.70

1N5822, 1N5822US

4011

Condition B, I

= 9.4 A (pk) pulse

method (see 4.5.1)

FM3

0.70

Reverse current l eakage

1N5822, 1N5822US

1N6864, 1N6864US

4016

VRM = 40 V (pk) pulse method

VRM = 80 V (pk) pulse method

(see 4.5.1)

RM1

0.10

0.15

Subgroup 3

High temperature operation :

= +100°C

Reverse current l eakage

1N5822, 1N5822US

1N6864, 1N6864US

4016

VRM = 40 V (pk) pulse method

VRM = 80 V (pk) pulse method

(see 4.5.1)

RM2

12.5

18.0

Forward voltage

1N5822, 1N5822US

1N6864, 1N6864US

4011

Condition B, I

= 3.0 A (pk) p ulse

method (see 4.5.1)

FM4

0.47

0.65

Low temperature

operation:

= -55°C

Reverse current l eakage

1N5822, 1N5822US

1N6864, 1N6864US

4016

VRM = 40 V (pk) pulse method

VRM = 80 V (pk) pulse method

(see 4.5.1)

RM3

0.40

0.55

Forward voltage

1N5822, 1N5822US

1N6864, 1N6864US

4011

Condition B, I

= 3.0 A (pk) p ulse

method (see 4.5.1)

FM5

0.62

0.80

Subgroup 4, 5, 6, and 7

Not applicable

1/ For sampling plan, see MIL-PRF-19500.

2/ This test required for the following end-point measurements only:

Group B, subgroups 3, 4 and 5 (JANS).

Group B, subgroups 2 and 3 (JAN, JANTX, JANTXV).

Group C, subgroups 2 and 6.

Group E, subgroup 1.

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TABLE II. Group E inspection (all quality levels) for qualification and requalification.

Inspection MIL-STD-750 Sampling

plan

Method Conditions

Subgroup 1

n = 45,

c = 0

Temperature cycling

1051

-65°C to 150°C, 500 cycles

Hermetic sea l

1071

Test condition E

Electrical measurement

See table I, subgroup 2

Subgroup 2

Intermittent Operating Life

1036

10,000 cycles

n = 22,

c = 0

Electrical measurement

See table I, subgroup 2

Subgroup 4

Thermal impedan ce curv es

See MIL-PRF-19500

Subgroup 5

Not applicable

Subgroup 6

ESD

1020

Subgroup 8

n = 45

Resistance to glass cracking

1057

Test to destruction or 25 cycles max, whichever comes

first.

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NOTES:

1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating ≤ TJ

specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired

maximum TJ allowed.

2. This temperature-current derating curve varies with applied voltage.

FIGURE 4. Temperature-current derating for 1N5822.

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NOTES:

1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating ≤ TJ

specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired

maximum TJ allowed.

2. This temperature-current derating curve varies with applied voltage.

FIGURE 5. Temperature-current derating for 1N5822US.

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NOTES:

1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating ≤ TJ

specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired

maximum TJ allowed.

2. This temperature-current derating curve varies with applied voltage.

FIGURE 6. Temperature-current derating for 1N6864.

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NOTES:

1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating ≤ TJ

specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired

maximum TJ allowed.

2. This temperature-current derating curve varies with applied voltage.

FIGURE 7. Temperature-current derating for 1N6864US.

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5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order

(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel

need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or

within the Military Service’s system commands. Packaging data retrieval is available from the managing Military

Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible

packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.

The notes specified in MIL-PRF-19500 are applicable to this specification.)

6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design

applications and logistic support of existing equipment.

6.2 Acquisit ion requirement s. The acquisition requirements should specify the following.

a. Title, number, and date of this specif ica t io n.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.1).

d. The complete Part or Identifying Number (PIN), see 1.5 and 6.4.

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,

at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covere d by this spe ci ficat ion. Information pertaining to qualification of products may be obtained from DLA

Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil. An online

listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at

https://assist.dla.mil.

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6.4 PIN construction example.

6.4.1 Encapsulated devices The PINs for encapsulated devices are constructed using the following form.

JANTX 1N 5822 US

JAN certification mark and quality level (see 1.5.1)

First number and first letter symbols (see 1.5.2.1)

Second number symbols (see 1.5.2.2)

Suffix symbol, if applicable (see 1.5.3)

6.4.2 Un-encapsulated devices. The PINs for un-encapsulated devices are constructed using the following form.

JANHC A 1N 5822

JAN certification mark and quality level (see 1.5.1.2)

Die identifier for unencapsulated devices (see 1.5.5)

First number and first letter symbols (see 1.5.2.1)

Second number symbols (see 1.5.2.2)

6.5 List of PINs for encaps ula ted devices. The following is a list of possible PINs available on this specification

sheet for enc aps ula ted dev ice s.

PINs

Axial

Package JAN1N5822 JANTX1N5822 JANTXV1N5822 JANS1N5822

JAN1N6864 JANTX1N6864 JANTXV1N6864 JANS1N6864

Package JAN1N5822US JANTX1N5822US JANTXV1N5822US JANS1N5822US

JAN1N6864US JANTX1N6864US JANTXV1N6864US JANS1N6864US

6.5.1 List of PINs for unenc ap sula ted dev ice s. The following is a list of possible PINs available on this

specification sheet for unencapsulated die. The qualified JANHC and JANKC suppliers with the applicable letter

version (example, JANHCA1N5822) will be identified on the QML.

JANHC and JANKC order ing i nfor mat io n

PIN Manufacturer

43611

1N5822 JANHCA1N5822, JANKCA1N5822

1N6864 JANHCA1N6864, JANKCA1N6864

MIL-PRF-19500/620K

w/AMENDMENT 1

6.6 Applications data.

6.6.1 Square-wave application with 1N5822US. For a printed board mounting example with FR4 base material to

support a 2 amp IO square wave switching at a 0.50 duty factor (50 percent duty cycle) at TJ = 100ºC and ambient

temperature of 55ºC, the following steps guide the user in calculating what the printed board copper mounting pad

size needs to be with 1 ounce, 2 ounce, and 3 ounce copper foil.

a. Locate the size of copper mounting pads on standard FR-4 base material to support operation at 2 A IO square

wave switching at a 0.50 duty factor (50 percent duty cycle) at TJ = 100ºC with TA = 50ºC.

b. Calculat e pea k IF = 2 A / 0.50 duty factor = 4 A.

c. Use the VF versus IF curve on figure 8 and figure 9 to loo k up IF = 4 A (Y-axis) and follow across to the TJ =

100ºC curve (middle) for VF = 0.39 V.

d. Calculate power = IF * VF * duty factor = 4 * 0.39 * 0.50 = 0.78 W.

e. Calculate maximum thermal resistance needed (100ºC – 50ºC) / 0.7 8 W = 64ºC /W.

f. Locate the thermal resistance of 64ºC/W on the Y-axis using a thermal resistance versus copper mounting pad

area plot on one of the three curves on figure 10 for different weights of copper foil and then intersect curve

horizonta lly det erm ine the ans wer. Curves assume still air and horizontal printed board position.

g. In this example, the copper mounting pad sizes for the different copper foil weights would be as follows:

1) .026 inch2 (16.77 mm2) for 1 ounce copper foil.

2) .16 inch2 (103.23 mm2) for 2 ounce cop per foil.

3) .1 inch2 (64.52 mm2) for 3 ounce copper foil.

h. A conservative pad guard-band is optional since TJ ≥ 125ºC. Multilayer printed boards or forced air cooling will

improve perfor ma nce. Closed confinement of the printed board will do the opposite.

MIL-PRF-19500/620K

w/AMENDMENT 1

FIGURE 8. VF versus IF Curve.

Schottky Vf-If Characteristi cs

0.000001

0.00001

0.0001

0.001

0.01

0.1

0.00 0.10 0.20 0.30 0.40 0.50 0.60

Vf (V)

If (A)

150 °C

125 °C

100 °C

75 °C

50 °C

25 °C

0 °C

-25 °C

-50 °C

1N5822 40V Glass Schottky

0.0 0.10 0.20 0.30 0.40 0.50 0.60

Vf (v)

Schottky V

– I

Characteristics

1N5822

MIL-PRF-19500/620K

w/AMENDMENT 1

FIGURE 9. VF versus IF Curve.

Schottky Vf-If Characteristi cs

0.000001

0.00001

0.0001

0.001

0.01

0.1

0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70

Vf (V)

If (A)

150 °C

125 °C

100 °C

75 °C

50 °C

25 °C

0 °C

-25 °C

-50 °C

1N6864 80V Glass Schottky

0.0 0.10 0.20 0.30 0.40 0.50 0.60 0.70

Vf (v)

Schottky Vf – If Characteristics

1N6864

MIL-PRF-19500/620K

w/AMENDMENT 1

FIGURE 10. Thermal resistance calculator (Ju nction to Ambient o n PCB).

B-Pkg/E-Pkg MELF/Axial Thermal Resistance vs FR4 Pad Area

Still Air, PCB Horizontal

100

1000

0.001 0.01 0.1 110 100

Pad Area per Pad (in2)

Thermal Resistance (C/W)

1oz Foil

2oz Foil

3oz Foil

AXIAL / US THERMAL RESISTANCE versus FR 4 P AD AREA

STILL AIR with the PCB HORIZONTAL

MIL-PRF-19500/620K

w/AMENDMENT 1

6.7 Request for new types and configurations. Requests for new device types or configurations for inclusions in

this specification sheet should be submitted to: DLA Land and Maritime, ATTN: VAC, Post Office Box 3990,

Columbus, OH 43218-3990 or by electronic mail at Semiconductor@dla.mil or by facsimile (614) 693-1642 or DSN

850-6939.

* 6.8 Amendment notations. The margins of this specification are marked with asterisks to indicate modifications

generated by this amendment. This was done as a convenience only and the Government assumes no liability

whatsoever for any inaccuracies in these notations. Bidders and contract or s are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 85 (Project 5961-2017-017)

NASA - NA

DLA - CC

Review activities:

Army - AR, MI, SM

Navy - AS, MC

Air Force - 19, 99

NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at https://assist.dla.mil.