©2000 Integrated Device Technology, Inc.
FEBRUARY 2001
DSC-3089/03
1
Features
◆◆
◆◆
◆High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25/35/45ns (max.)
– Commercial: 15/20/25/35/45ns (max.)
◆◆
◆◆
◆Low-power consumption
◆◆
◆◆
◆Battery backup operation
– 2V data retention voltage (LA version only)
◆◆
◆◆
◆Produced with advanced CMOS high-performance
technology
◆◆
◆◆
◆CMOS process virtually eliminates alpha particle soft-error
rates
◆◆
◆◆
◆Input and output directly TTL-compatible
◆◆
◆◆
◆Static operation: no clocks or refresh required
◆◆
◆◆
◆Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
◆◆
◆◆
◆Military product compliant to MIL-STD-833, Class B
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as CS remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1µW to 4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
Military grade product is manufactured in compliance to the latest
version of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
Functional Block Diagram
CS
A0
A10
I/O 0
I/O7
OE
WE
128 X 128
MEMORY
ARRAY
I/O CONTROL
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
GND
3089 drw 01
VCC
,
CMOS Static RAM
16K (2K x 8-Bit)
IDT6116SA
IDT6116LA
2
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
Pin Configurations
Absolute Maximum Ratings(1)
Truth Table(1)
Pin Description
Capacitance (TA = +25°C, f = 1.0 MHZ)
DIP/SOIC/SOJ
Top View
3089 drw 02
5
6
7
8
9
10
11
12GND
1
2
3
4
24
23
22
21
20
19
18
17
P24-2
P24-1
D24-2
D24-1
SO24-2
SO24-4
A5
A4
A3
A2
A1
A0
I/O0
I/O1
VCC
A9
WE
A10
I/O5
I/O4
OE
16
15
14
13
A7
A6
I/O7
I/O6
CS
A8
I/O2I/O3,
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance V
IN
= 0V 8 pF
C
I/O
I/ O Cap acitance V
= 0V 8 pF
3089 tbl 03
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. VTERM must not exceed VCC +0.5V.
Symbol
Rating
Com'l.
Mil.
Unit
V
TERM
(2) Terminal Voltage
with Re sp e ct
to GND
-0.5 to +7.0 -0.5 to +7.0 V
T
A
Operating
Temperature 0 to +70 -55 to +125 oC
T
BIAS
Temperature
Under Bias -55 to +125 -65 to +135 oC
T
STG
Storage Temperature -55 to +125 -65 to +150 oC
P
T
Power Dissipation 1.0 1.0 W
I
OUT
DC Outp ut Current 50 50 mA
3089 tbl 04
Name
Description
A
0
- A
10
Address Inputs
I/O
0
- I/O
7
Data Inp ut/ Outp ut
CS Chip Select
WE Write Enable
OE Output Enable
V
CC
Power
GND Ground
3089 tbl 01
NOTE:
1 . H = VIH, L = VIL, X = Don't Care.
Mode
CS OE WE
I/O
Standby H X X High-Z
Read L L H DATA
OUT
Read L H H High-Z
Write L X L DATA
IN
3089 tbl 02
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
3
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are cycling at fMAX, f = 0 means address inputs are not changing.
DC Electrical Characteristics(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
Recommended Operating
Temperature and Supply Voltage
Recommended DC
Operating Conditions
NOTES:
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
2. VIN must not exceed VCC +0.5V.
Grade
Ambient
Temperature
GND
Vcc
Military -55OC to + 125OC0V 5.0V ± 10%
Industrial -45OC to + 85OC0V 5.0V ± 10%
Commercial 0OC to + 70OC0V 5.0V ± 10%
3089 tbl 05
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage 4.5 5.0 5.5(2) V
GND Ground 0 0 0 V
V
IH
Inp ut Hig h Vo ltag e 2. 2 3. 5 V
CC
+0.5 V
V
IL
Inp ut Low Voltage -0.5(1) ____ 0.8 V
3089 tbl 06
Symbol
Parameter
Test Conditions
IDT6116SA
IDT6116LA
Unit
Min.
Max.
Min.
Max.
|I
L
I
|Input Leakage Current V
CC
= Max.,
V
IN
=
GND to V
CC
MIL.
COM'L. ____
____ 10
5____
____ 5
2µA
|I
LO
| Outp ut Leak ag e Curre nt V
CC
= Max., CS = V
IH
,
V
OUT
= GND to V
CC
MIL.
COM'L. ____
____ 10
5____
____ 5
2µA
V
OL
Outp ut Low Vo ltage I
OL
= 8mA, V
CC
= Min. ____ 0.4 ____ 0.4 V
V
OH
Outp ut Hig h Vo ltag e I
OH
= -4mA, V
CC
= Min. 2.4 ____ 2.4 ____ V
3089 tbl 07
Symbol
Parameter
Power
6116SA15
6116SA20
6116LA20
6116SA25
6116LA25
6116SA35
6116LA35
Unit
Com'l
Only
Com'l
& I nd
Mil
Com'l
& I nd
Mil
Com'l.
& Ind.
Mil
ICC1 Operating Power Supply Current
CS < V
IL
, Outp uts Ope n
V
CC
= Max ., f
=
0
SA 105 105 130 80 90 80 90 mA
LA 95 95 120 75 85 75 85
ICC2 Dynamic Op erating Current
CS < V
IL
, Outp uts Ope n
V
CC
= Max., f = f
MAX
(2)
SA 150 130 150 120 135 100 115 mA
LA 140 120 140 110 125 95 105
ISB Stand by Powe r Supply Curre nt
(TTL Le ve l )
CS > V
IH
, Outp uts Ope n
V
CC
= Max., f = f
MAX
(2)
SA 40 40 50 40 45 25 35 mA
LA 35 35 45 35 40 25 30
ISB1 Full Standby Po wer Supp ly Current
(CMOS Le v el )
CS > V
HC
, V
CC
= Max.,
V
IN
< V
LC
or V
IN
> V
HC
, f = 0
SA 2 2 10 2 10 2 10 mA
LA 0.1 0.1 0.9 0.1 0.9 0.1 0.9
3089 tbl 08
4
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
NOTES:
1. TA = + 25°C
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
DC Electrical Characteristics(1)
(continued)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing.
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (VLC = 0.2V, VHC = VCC  0.2V)
Symbol
Parameter
Power
6116SA45
6116LA45
6116SA55
6116LA55
6116SA70
6116LA70
6116SA90
6116LA90
6116SA120
6116LA120
6116SA150
6116LA150
Unit
Com'l
& I nd
Mil
Mil Only
Mil Only
Mil Only
Mil Only
Mil Only
ICC1 Operating Power Supply
Current, CS < V
IL
,
Outp uts Op e n
V
CC
= Max ., f
=
0
SA 80 90 90 90 90 90 90 mA
LA 75 85 85 85 85 85 85
ICC2 Dynamic Op erating
Curre nt, CS < V
IL
,
Outp uts Op e n
V
CC
= Max., f = f
MAX
(2)
SA 100 100 100 100 100 100 90 mA
LA 90 95 90 90 85 85 85
ISB Standb y Powe r Supply
Curre nt (TTL Le ve l)
CS > V
IH
, Outp uts Ope n
V
CC
= Max., f = f
MAX
(2)
SA 25 25 25 25 25 25 25 mA
LA 20 20 20 20 25 15 15
ISB1 Full Standby Po wer
Sup p ly Curre nt (CMOS
Level), CS > V
HC
,
V
CC
= Max., V
IN
< V
LC
or V
IN
> V
HC
, f = 0
SA2101010101010
mA
LA 0.1 0.9 0.9 0.9 0.9 0.9 0.9
3089 tbl 09
Typ.
(1)
V
CC
@
Max.
V
CC
@
Symbol
Parameter
Test Condition
Min.
2.0V
3.0V
2.0V
3.0V
Unit
V
DR
V
CC
fo r Data Re te ntio n
____
2.0
____
____
____
____
V
I
CCDR
Data Re te ntio n Curre nt MIL.
COM'L.
____
____
0.5
0.5 1.5
1.5 200
20 300
30 µA
t
CDR
(3) Chip De s e le c t to Data
Retention Tim e CS > V
HC
V
IN
> V
HC
or < V
LC
____
0
____
____
____
ns
t
R
(3) Operation Recovery Time t
RC
(2)
____
____
____
____
ns
II
LI
IInput Leakage Current
____
____
____
22
µA
3089 tbl 10
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
5
Low VCC Data Retention Waveform
AC Test Conditions
DATA RETENTION MODE
VCC
CS
tCDR
4.5V VDR ≥2V
VDR
4.5V
tR
VIH VIH 3089 drw 03 ,
Figure 2. AC Test Load
(for tOLZ, tCLZ, tOHZ, tWHZ, tCHZ & tOW)
Figure 1. AC Test Load
*Including scope and jig.
3089 drw 04
30pF*
255Ω
5V
DATAOUT
480Ω
,5pF*
255Ω
5V
480Ω
DATAOUT
3089 drw 05
,
Input Pulse Levels
Inp ut Ri se / Fall Time s
Inp ut Tim ing Re fe re nc e Le v e ls
Output Re fe re nc e Le v e ls
AC Te st Load
GND to 3.0V
5ns
1.5V
1.5V
See Fi gures 1 and 2
3089 tbl 11
6
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges) (continued)
NOTES:
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges)
Symbol
Parameter
6116SA15
(1)
6116SA20
6116LA20
6116SA25
6116LA25
6116SA35
6116LA35
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Read C ycl e
tRC Re ad Cy cl e Ti me 15
____
20
____
25
____
35
____
ns
tAA Address Access Time
____
15
____
19
____
25
____
35 ns
tACS Chip Select Access Time
____
15
____
20
____
25
____
35 ns
tCLZ(3) Chip S ele ct to Output in Low-Z 5
____
5
____
5
____
5
____
ns
tOE Outp u t E nab le to Outp ut Vali d
____
10
____
10
____
13
____
20 ns
tOLZ(3) Output En able to Outp ut in Lo w-Z 0
____
0
____
5
____
5
____
ns
tCHZ(3) Chip Dese lect to Outp ut in High-Z
____
10
____
11
____
12
____
15 ns
tOHZ(3) Outp ut Disab le to Outp ut in Hig h-Z
____
8
____
8
____
10
____
13 ns
tOH Output Hold from Address Change 5
____
5
____
5
____
5
____
ns
tPU(3) Chip Se le ct to Po wer Up Time 0
____
0
____
0
____
0
____
ns
tPD(3) Chip De s elect to Po we r Down Ti me
____
15
____
20
____
25
____
35 ns
3 0 89 tb l 12
Symbol
Parameter
6116SA45
6116LA45
6116SA55
(2)
6116LA55
(2)
6116SA70
(2)
6116LA70
(2)
6116SA90
(2)
6116LA90
(2)
6116SA120
(2)
6116LA120
(2)
6116SA150
(2)
6116LA150
(2)
Unit
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Read C ycl e
tRC Re ad Cy cl e Ti me 45
____
55
____
70
____
90
____
120
____
150
____
ns
tAA Address Access Time
____
45
____
55
____
70
____
90
____
120
____
150 ns
tACS Chip Select Access Time
____
45
____
50
____
65
____
90
____
120
____
150 ns
tCLZ(3) Chip S ele ct to Output in Low-Z 5
____
5
____
5
____
5
____
5
____
5
____
ns
tOE Outp u t E nab le to Outp ut Vali d
____
25
____
40
____
50
____
60
____
80
____
100 ns
tOLZ(3) Output En able to Outp ut in Lo w-Z 5
____
5
____
5
____
5
____
5
____
5
____
ns
tCHZ(3) Chip Dese lect to Outp ut in High-Z
____
20
____
30
____
35
____
40
____
40
____
40 ns
tOHZ(3) Outp ut Disab le to Outp ut in Hig h-Z
____
15
____
30
____
35
____
40
____
40
____
40 ns
tOH Output Hold from Address Change 5
____
5
____
5
____
5
____
5
____
5
____
ns
3 0 89 tb l 13
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
7
Timing Waveform of Read Cycle No. 2(1,2,4)
Timing Waveform of Read Cycle No. 1(1,3)
Timing Waveform of Read Cycle No. 3(1,3,4)
NOTES:
1. WE is HIGH for Read cycle.
2. Device is continously selected, CS is LOW.
3. Address valid prior to or coincident with CS transition LOW.
4. OE is LOW.
5. Transition is measured ±500mV from steady state.
ADDRESS
OE
CS
tRC
tAA
tOE
tACS
DATAOUT
tOH
tOLZ (5)
tCLZ (5)
tOHZ (5)
tCHZ (5)
3089 drw 06
DATA
VALID
tPD
ICC
ISB
tPU
VCC
Supply
Currents ,
ADDRESS
tRC
tAA
tOH tOH
DATAOUT
3089 drw 07
PREVIOUS DATA VALID DATA VALID ,
CS
tACS
DATAOUT
tCLZ (5) tCHZ (5)
DATA VALID 3089 drw 08 ,
8
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges)
NOTES:
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
4 . The specification for tDH must be met by the device supplying write data to the RAM under all operation conditions. Although t DH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges) (continued)
6116SA15
(1)
6116SA20
6116LA20
6116SA25
6116LA25
6116SA35
6116LA35
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Wr ite C ycle
tWC Write Cycle Time 15
____
20
____
25
____
35
____
ns
tCW Chip Se l ec t to End -o f-Write 13
____
15
____
17
____
25
____
ns
tAW Address Valid to End-of-Write 14
____
15
____
17
____
25
____
ns
tAS Address Set-up Time 0
____
0
____
0
____
0
____
ns
tWP Write Pulse Width 12
____
12
____
15
____
20
____
ns
tWR Write Recovery Time 0
____
0
____
0
____
0
____
ns
tWHZ(3) W rite to Output in Hig h-Z
____
7
____
8
____
16
____
20 ns
tDW Data to Write Time Overlap 12
____
12
____
13
____
15
____
ns
tDH(4) Data Ho ld fro m Write Time 0
____
0
____
0
____
0
____
ns
tOW(3,4) Output Active from End-of-Write 0
____
0
____
0
____
0
____
ns
3 0 89 tb l 14
6116SA45
6116LA45
6116SA55
(2)
6116LA55
(2)
6116SA70
(2)
6116LA70
(2)
6116SA90
(2)
6116LA90
(2)
6116SA120
(2)
6116LA120
(2)
6116SA150
(2)
6116LA150
(2)
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Wr ite C ycle
tWC Write Cycle Time 45
____
55
____
70
____
90
____
120
____
150
____
ns
tCW Chip Se l ec t to End -o f-Write 30
____
40
____
40
____
55
____
70
____
90
____
ns
tAW Address Valid to End-of-Write 30
____
45
____
65
____
80
____
105
____
120
____
ns
tAS Address Set-up Time 0
____
5
____
15
____
15
____
20
____
20
____
ns
tWP Write Pulse Width 25
____
40
____
40
____
55
____
70
____
90
____
ns
tWR Write Recovery Time 0
____
5
____
5
____
5
____
5
____
10
____
ns
tWHZ(3) W rite to Output in Hig h-Z
____
25
____
30
____
35
____
40
____
40
____
40 ns
tDW Data to Write Time Overlap 20
____
25
____
30
____
30
____
35
____
40
____
ns
tDH(4) Data Ho ld fro m Write Time 0
____
5
____
5
____
5
____
5
____
10
____
ns
tOW(3,4) Output Active from End-of-Write 0
____
0
____
0
____
0
____
0
____
0
____
ns
3 0 89 tb l 15
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
9
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,5,7)
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,2,3,5,7)
NOTES:
1. WE or CS must be HIGH during all address transitions.
2. A write occurs during the overlap of a LOW CS and a LOW WE.
3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle.
4 . During this period, the I/O pins are in the output state and the input signals must not be applied.
5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state.
6. Transition is measured ±500mV from steady state.
7. OE is continuously HIGH. If OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ + tDW) to allow the I/O drivers
to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the write pulse
is the specified tWP. For a CS controlled write cycle, OE may be LOW with no degradation to tCW.
ADDRESS
DATAOUT
CS
WE
DATAIN
tWC
tAW
3089 drw 09
tAS
tWHZ(6)
(4)
tDW tDH
(4)
tOW
tWR tCHZ (6)
tWP(7)
(6)
PREVIOUS DATA VALID DATA
VALID
DATA VALID
(3)
,
CS
WE
DATAIN
tWC
tAW
tCW
tWR (3)
tDW tDH
tAS
3089 drw 10
DATA VALID
ADDRESS
,
10
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
Ordering Information  Military
Blank
I
TP
P
SO
Y
15*
20
25
35
45
SA
LA
Commercial (0°C to +70°C)
Industrial (-45°C to +85°C)
300 mil Plastic DIP (P24-1)
600 mil Plastic DIP (P24-2)
300 mil Small Outline IC, Gull-Wing Bend (SO24-2)
300 mil SOJ, J-Bend (SO24-4)
Standard Power
Low Power
IDT 6116
Device Type XX
Power XXX
Speed X
Package X
Process/
Temperature
Range
3089 drw 12
Speed in nanoseconds
,
*Available in commercial temperature range and standard power only.
Ordering Information  Commercial & Industrial
B
TD
D
20*
25*
35*
45
55
70
90
120
150**
SA
LA
Military (-55°Cto+125
°C)
Compliant to MIL-STD-883, Class B
300 mil CERDIP (D24-1)
600 mil CERDIP (D24-2)
Standard Power
Low Power
IDT 6116
Device Type XX
Power XXX
Speed X
Package X
Process/
Temperature
Range
3089 drw 11
Speed in nanoseconds
,
*Available in 300 mil packaging only.
**Available in 600 mil packaging only.
6.42
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
11
Datasheet Document History
1/7/00 Updated to new format
Pg. 1, 3, 4, 10 Added Industrial Temperature range offerings
Pg. 9, 10 Separated ordering information into military, commercial, and industrial temperature range offerings
Pg. 11 Added Datasheet Document History
08/09/00 Not recommended for new designs
02/01/01 Removed "Not recommended for new designs"
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