FDD4685-F085 P-Channel PowerTrench® MOSFET
©2016 Semiconductor Components Industries, LLC.
September-2017,Rev.2
Publication Order Number:
FDD4685-F085/D
FDD4685-F085
P-Channel PowerTrench® MOSFET
-40 V, -32 A, 35 mΩ
Features
Typical RDS(on) = 23 m at VGS = -10V, ID = -8.4 A
Typical RDS(on) = 30 m at VGS = -4.5V, ID = -7 A
Typical Qg(tot) = 19 nC at VGS = -5V, ID = -8.4 A
UIS Capability
RoHS Compliant
Qualified to AEC Q101
Applications
Inverter
Power Supplies
G
S
D
TO-252
D-PAK
(TO-252)
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol Parameter Ratings Units
VDSS Drain-to-Source Voltage -40 V
VGS Gate-to-Source Voltage ±20 V
ID
Drain Current - Continuous (TC < 90°C, VGS=10) (Note 1) -32 A
Pulsed Drain Current See Figure 4
EAS Single Pulse Avalanche Energy (Note 2) 121 mJ
PD
Power Dissipation 83 W
Derate Above 25oC0.56W/
oC
TJ, TSTG Operating and Storage Temperature -55 to + 175 oC
RJC Thermal Resistance, Junction to Case 1.8 oC/W
RJA Maximum Thermal Resistance, Junction to Ambient (Note 3) 40 oC/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD4685 FDD4685-F085 D-PAK(TO-252) 13” 12mm 2500units
Notes:
1. Current is limited by bondwire configuration.
2. Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche.
3. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating
presented here is based on mounting on a 1 in2 pad of 2oz copper.
4. A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially
announced in Aug 2014.
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Electrical Characteristics TJ = 25°C unless otherwise noted.
Off Characteristic s
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage ID = -250A, VGS = 0V -40 - - V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient ID = -250μA, referenced to 25oC - -33 - mV/oC
IDSS Drain-to-Source Leakage Current VDS = -32V - - -1 A
IGSS Gate-to-Source Leakage Current VGS = ±20V - - ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250A-1-1.6-3V
VGS(th)
TJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = –250μA, referenced to 25°C - 4.9 - mV/oC
RDS(on) Drain to Source On Resistance
ID = -8.4A, VGS= -10V - 23 27
mID = -7A, VGS= -4.5V - 30 35
ID = -8.4A, VGS= -10V, TJ = 150oC - 38 45
gFS Forward Transconductance ID = –8.4A, VDS = –5V - 23 - s
Ciss Input Capacitance VDS = -20V, VGS = 0V,
f = 1MHz
- 1790 2380 pF
Coss Output Capacitance - 260 345 pF
Crss Reverse Transfer Capacitance - 140 205 pF
RgGate Resistance f = 1MHz - 4 -
Qg(ToT) Total Gate Charge VDD = -20V, VGS = -5V,
ID = -8.4A
-1927nC
Qgs Gate-to-Source Gate Charge - 5.6 - nC
Qgd Gate-to-Drain “Miller“ Charge - 6.1 - nC
Switching Characteristics
Drain-Source Diode Characteristics
td(on) Turn-On Delay
VDD = -20V, ID = -8.4A,
VGS = -10V, RGEN = 6
- 8 16 ns
trRise Time - 15 27 ns
td(off) Turn-Off Delay - 34 55 ns
tfFall Time - 14 26 ns
VSD Source-to-Drain Diode Voltage ISD = -8.4A, VGS = 0V - -0.85 -1.2 V
trr Reverse-Recovery Time ISD = -8.4A, dISD/dt = 100A/s-3045ns
Qrr Reverse-Recovery Charge - 31 47 nC
FDD4685-F085 P-Channel PowerTrench® MOSFET
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Typical Characteristics
Figure 1. Normalized Power Dissip ation vs. C ase
Temperature Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
FDD4685-F085 P-Channel PowerTrench® MOSFET
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Figure 5. Forward Bias Safe Operating Area NOTE: Refer to ON SemiconductorApplication Notes AN7514
and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics
Figure 9. Drain to Source On-Resistance
Variation vs. Gate to Source Voltag e Figure 10. Normalized Drain to Source On
Resistance vs. Junction Temper ature
Typical Characteristics
FDD4685-F085 P-Channel PowerTrench® MOSFET
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Figure 11. Normalized Gate Threshold Voltage vs.
Junction Temper a ture Figure 12. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 13. Capacitance vs. Drain to Source
Voltage Figure 14. Gate charge vs. Gate to Source
Voltage
Typical Characteristics
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