G E SOLID STATE O1 DE 3875001 oo1n7d47 go I I-27~- 27 Signal Transistors 2N5305, 6, 6A, GES5305, 6, 6A Silicon Darlington Transistors TO-92 TO-98 The GE/RCA 2N5305, 06, 06A and GES5305, 6, and 6A are planar, epitaxial, passivated NPN silicon Darlington transis- tors designed for preamplifier stages requiring input impe- dances of several megohms or extremely low-level, high-gain low-noise amplifier applications. These types can MAXIMUM RATINGS, Absolute-Maximum Values: COLLECTOR TO EMITTER VOLTAGE (Vogg) 0c ec eee een eee etree rene eee n nent e enna ts -25V EMITTER TO BASE VOLTAGE (Vago)... 0-2 eee e renee COLLECTOR TO BASE VOLTAGE (Vggo) -.-- 0-2 CONTINUOUS COLLECTOR CURRENT (Ic) COLLECTOR CURRENT (PULSED)' (Ig). ss sss cree ee eee CONTINUOUS BASE CURRENT (Ig)... 6-0. eee eee eee eee TOTAL POWER DISSIPATION (Ta < 25C) (P+) DERATE FACTOR (Tg > 25C)... 00. eevee ere eens OPERATING TEMPERATURE (Ty) .....-.--.+6 STORAGE TEMPERATURE (Teta). .--- 0 ee eee LEAD TEMPERATURE, 1/16 + 1/32 (1.58mm 4 0.8mm) from case for 10s max (T,) *Pulsed Conditions: Pulse widih < 300 us, Duty factor < 2%. be used in medium-speed switching circuits in consumer and industrial control applications. The 2N5305, 6, and 6A are supplied in JEDEC TO-98 pack- age, the GES5305, 6, and 6A are supplied in JEDEC TO-92 package. Devices in TO-98 package are supplied with and without seating flange (see Dimensional Outline). File Number 2065 51 - 65 to + 125C - 65 to + 150C + 260C G E SOLID STATE O1 DEQ 3a7soa1 OOL?W4a 2 i . 4 s Signal Transistors T Zz 9 27 2N5305, 6, 6A, GES5305, 6, 6A ELECTRICAL CHARACTERISTICS, At Ambient Temperature (Ta) = 25C Unless Otherwise Specified LIMITS CHARACTERISTICS SYMBOL MIN. MAX. UNITS Collector-To-Emitter Breakdown Voltage (lg = 10 mA, Ip = 0) BVcEo 25 = Collector-To-Base Breakdown Voltage (Ig = 0.1pA, Ie = 0) BVcgo0 25 - Vv Emitter-To-Base Breakdown Voltage (lg = 0.1pA, Ip = 0) BYepo 12 - DC Forward Current Transfer Ratio (ig = 2MA, Voge = 5V) 2N5305, GES5305 2,000 20,000 (Ic = 100MA, Voge = 5V) 2N5305, GES5305 hee 6,000 - _ (ig = 2MA, Vog = 5V) 2N5306, GES5306A 7,000 70,000 | (Ig = 100MA, Voge = 5V) _ 2N5306, GES5306A 20,000 - i Coltector-To-Emitter Saturation Voltage | (Ig = 200mA, Ip = 0.2mA) Voe(sat) - 1.4 | Base-To-Emitter Saturation Voltage (Ig = 200MA, Ip = 0.2mA) Vage(sat) - 1.6 v Base-To-Emitter Voltage (Ig = 200MA, Voge = 5y) Vee _ 1.5 . | Collector-To-Base Cutoff Current (Veg = 25V, Ie = 9) logo ~ 100 nA (Veg = 25V, Ie = 0,T, = 100)C) - 20 HA Smali-Signal Current Transfer Ratio . Wee = 5V, io = 2mA, f = 1 KHZ) 2N5305, GES5305 Ne 2,000 - (Voge = 5V,ig = 2mA,f=1KHZ) 2N5306, 6A, GES5306, 6A 7,000 - - (Voge = 5V Ig = 2mA, f = 10 MHZ) Intel 15.6 - dB Input Capacitance (Veg = 0.5V, f = 1 MHZ) Cob 10.5 Typical pF Output Capacitance 7.6 (Vop = 10V, f = 1 MHZ) Cop Typical 10 Input Impedance (Vog = 5V, Io = 2mA, f = 1KHz) 650 Typical KQ Gain-Bandwidth Product (Voce = 5V, Ig = 2mA, f = 10MHz) fr 60 - MHZ Noise Figure (Voce = 5V, Ig = 0.6mA, Rig = 160k, 195 f = 10 Hz, to 10 kHz, Bandwidth = 15.7 kHz) 2N5306A, GES5S306A on Typical 230 nvif Hz TERMINAL CONNECTIONS TERMINAL CONNECTIONS TO-92 Package TO-98 Package Lead 1 - Emitter Lead 1 - Emitter Lead 2 - Base Lead 2 - Collector Lead 3 - Collector Lead 3 - Base 52 G E SOLID STATE O1 DE fj 3a75081 oo17949 4 i Signal Transistors VOL TEMPERATURE (Ta) = 25C TRANSFER 3, RATIO (hFe) X a ot 1 10 yo? 103 COLLECTOR CURRENT (Ic) -mA 92S- 42632 Fig. 1 Typical de forward-current transter ratio characteristics. NORMALIZED DC FORWARD-CURRENT TRANSFER RATIO (hee) AMBIENT TEMPERATURE (Ta) - C 9208-42629 Fig. 3Normalized de forward-current transfer ratio characteristics. 1 > ; & w a = ot < 5 > 10 102 103 COLLECTOR CURRENT (ic}- mA 9208-42636 Fig. 5 Typical base-to-emitier saturation voltage characteristics. 2N5305, 6, 6A, GES5305, 6, 6A T2722? t Be 2g S w nn a zZ < E 246 2466 2 46 2466 ,2 468 4 oot t L 10 10 COLLECTOR CURRENT {Ic}-mA 92CS -42633 Fig. 2Normalized dc forward-current transfer ratio characteristics. VOLTAGE (Vcesst) - 1 10 to? 5403 COLLECTOR CURRENT (Ic) - mA g2cS-42644 Fig. 4 Typical collector-to-emitter saturation voltage characteristics, (Ta) = 25C - uA < 3 5 w f 2 3 6 6 w a 5 o BASE CURRENT (ig) = 124 GOLLECTOR-TO-EMITTER VOLTAGE (Vcg} -V 926$-42631 Fig, 6Typicaloutput characteristics. G E SOLID STATE Ol DE ff 3875081 0017950 0 I 3875081 G E& SOLID STATE Q1E 17950 D Signal Transistors T 2 GS - 27 2N5305, 6, 6A, GES5305, 6, 6A SASE-TO-EMITTER VOLTAGE (Vpe)- i COLLECTOR-TO-EMITTER VOLTAGE (VcE}- ' 10 10? to? : COLLECTOR CURRENT (Ic) - mA 9205-42630 9205-42635 Fig. 7 Typical output characteristics. Fig. 8 Typical transfer characteristics. ENT 3 um (ERO) - pA x = 2 Qo n e 5 2 o w 4 < a o eS p E = w =30 90 AMBIENT TEMPERATURE (Ta) C AMBIENT TEMPERATURE (Ta) - C g2c$-4262F 9208-42626 Fig. 9 Typical collector-to-base cutoff current charactoristic. Fig. 10~ Typical emitter-to-base cutoff current characteristic. COLLECTOR-TO-EMITTER VOLTAGE (VcE)=5V 04) AMBIENT TEMPERATURE (Ta) = 5 . pNoprau SOURCE RESISTANCE (Rg), Rg ~ 25 | a rc t wn Ny, lg 03 Nit, 32 . 2 y yw 3 4a = 5 ete = & La Zoz ow 2 = z 3 = 2 2 = 5 4 t71 = g os == #5 (1 kee) & 1 ==| 3 a by (10 wea: ty (1 kHz) a > & fe 10 tz) oi _ toe i ot s ; COLLECTOR CURRENT (Ic) - mA NOTE: DUE TO THE NOISE CHARACTERISTICS OF THIS DEVICE VEASUS FREQUENCY, CALCULATION OF NOISE FIGURE (NF) FROM eq, Ix VALUES (S NOT ACCURATE [AS IS THE CASE WITH FIELD-EFFECT TRANSISTORS (FETs}). szcs-az629 Fig. 11 Equivalent Input nolse-voltage and noise-current characteristics