ADVANCE HIGH-SPEED INFORMATION FCTXXXT/AT Integrated Device Technology. Inc. CMOS LOGIC TTL OUTPUT ONLY SERIES FEATURES: FCTXXXT series equivalent to FCT and FAST" speeds and drive e FCTXXXAT series equivalent to FCTA speeds and drive e CMOS devices with TRUE TTL input and output compatibility Von = 3.3V (typ.) Vor = 0.3V (typ.) lo. Up to 64MA (Commercial) and 48mA (Military) CMOS power levels (1mW typical static) JEDEC standard pinout for DIP, SOIC and LCC packages Military Product Compliant to MIL-STD-883, Class B Available in Rad Hard and Rad Tolerant Versions DESCRIPTION: The FCTXXXT and FCTXXXAT are high-speed CMOS logic products designed with true TTL level input and output voltages. The reduced voltage swing (3.4 Valts rail to rail) rasults in lower AC switching noise. Effectively, the FCTXXXT and FCTXXXAT products combine the high-speed, low power advantages of CMOS logic products with the lower AC switching noise of tradi- tional Bipolar logic families. The FCTXXXT and FCTXXXAT series of CMOS devices are built using advanced CEMOS , a dual metal CMOS technology. This technology is designed to supply the highest device speeds while maintaining CMOS power levels. Information on our FCTXXXT and FCTXXXAT series include the Absolute Maximum Ratings and DC Electrical Characteristics. For more detailed information on specifications (Pin Description, Block Diagram, Truth Table and Power Supply and Switching Characteristics), refer to the appropriate data sheets in the 1989 Data Book Supplement. Products to be offered: IOTS4/74FCT240T/AT refer to IDT54/74FCT240/A page S10-82 IDT54/74FCT241T/AT refer to |IOT54/74FCT241/A page S10-86 IDTS4/74FCT2447/AT refer to IOT54/74FCT244/A page S10-86 IDTS4/74FCT245T/AT refer to IDT54/74F CT245/A page S10-92 IDT54/74FCT373T/AT refer to IDT54/74FCT373/A page $10-105 IDTS4/74FCT374T/AT refer to IDT54/74FCT374/A page S10- 109 IDTS4/74FCTS40T/AT refer to IDT54/74FCT540/A page S10- 122 IDTS4/74FCT541T/AT refer to 1DT54/74FCT541/A page S10- 122 IDTS4/74FCT646T/AT refer to 1DT54/74FCT646/A page S10-140 IDT54/74FCT821T/AT refer to 1DT54/74FCT821/A page S10-152 IDTS4/74FCT823T/AT refer to IDT54/74FCT823/A page S10-152 IDTS4/74FCT827T/AT refer to 1DT54/74FCT827/A page S10-158 IDT54/74FCT841T/AT refer to 1DT54/74FCT841/A page S$10-171 IDT54/74FCT843T/AT refer to IDT54/74FCT843/A page S10-171 CEMOS is a trademark of Integrated Device Technology. Inc FAST is a trademark of Fairchild Semiconductor Co MILITARY AND COMMERCIAL TEMPERATURE RANGES 'C) 1989 integrated Device Technology. Inc $10-6 JANUARY 1989 OSC 4067/ (IDTFCTXXXT/AT HIGH-SPEED CMOS LOGIC MILITARY AND COMMERCIAL TEMPERATURE RANGES ABSOLUTE MAXIMUM RATINGS * CAPACITANCE (t= +2C. t = 1,0MHz) SYMBOL RATING COMMERCIAL| MILITARY | UNIT SYMBOL] PARAMETER") |CONDITIONS!| TYP. | MAX.| UNIT Terminal Voltage c Vin = OV Viens (2:| With Respect to -05t0 +70 |-05to +7.0] v IN Input Capacitance N 6 10_| pF GND Cour | Output Capacitance] Voyu7 = OV 8 12 pF Terminal Voltage Cio VO Capacitance Vout = OV 8 12 pF Vream (3)| With Respect to -05 to Voc -05 ta Veg Vv NOTE: GND 1. This parameter is measured at characterization but not tested ii Ta sca ae Oto +70 |-55to +125] c Temperature Tsias | Under Bias -65 to +125 |-65to +135] C Storage Te _ - STG Temperature 55 to +125 |-65to +150 Cc Py Power Dissipation 05 0.5 Ww lour DC Output Current 120 120 mA NOTES: 1. Stresses greater than thase listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is astress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability 2. Input and Veg terminals only 3 Outputs and I/O terminals only $10-7 IDTFCTXXXT/AT HIGH-SPEED CMOS LOGIC MILITARY AND COMMERCIAL TEMPERATURE RANGES DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE Following Conditions Apply Unless Otherwise Specified Commercial: Ta = OC to +70C: Vog = 5.0V45% Military: Ta = -55C to + 125C; Voc = 5.0V+10% SYMBOL PARAMETER TEST CONDITIONS MIN. | TYP.2)] MAX. | UNIT Vu Input HIGH Level Guaranteed Logic High Level 20 - - Vv Vic Input LOW Level Guaranteed Logic Low Level - - 08 v Voc = Max. Except I/O Pins - - 5 ty Input HIGH Current yA Vo= 2.7V 1/0 Pins - - 15 Voc = Max. Except I/O Pins - - - Ie input LOW Current pA Vv, = SV V/O Pins - _ ~15 loz Vo = 2.7V - - 10 High Impedance Output Current Voc = Max. pA loz Vo = SV - = ~10 \, Input HIGH Current Veco = Max. V; = Voc (Max.} - - 100 HA Vix Clamp Diode Voltage Voc = Min.. ly = -18MA - -0.7 1.2 Vv los Short Circuit Current Voc = Max.) Vo = GND -60 - -225 | mA lon = -6mA MIL. Voc = Min. = . 24 3.3 - v Vou Output HIGH Voltage Vin = Vjq or Vy lon = ~BmA COM'L. low = -12mA MIL lo. = -15MA COML. 20; 30 |) - v veo = Min. lo. = 48mA MIL V, Output LOW Volta Vin = My OF M or = fem - - 0.3 | 0.55 Vv OL meu ona Noone lou = 64mA COM'L. Line Drivers Veo = Min. Vin = Vyy Or V, = Vo. Output LOW Voltage nM OFM io = nm OOM - o3 | 05 V Standard, 3-State, o " and 800 Series Va input Hysteresis Veo = BV - 200 ~ mv lee Quiescent Power Supply Current Veco = Max.. Wy > GNDor &c - 02 15 mA NOTES: 1. For conditions shown as max. or min., use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at Voc = 5.0V, + 25C ambient and maximum loading. 3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second 4. This parameter is guaranteed but not tested $10-8