ABSOLUTE MAXIMUM RATINGS(TA=25ºC)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
BD233 BD235 BD237 Unit
100 V
V
V
Rating
Device Marking
BD233/235/237
TO-126
Tstg ˚C
˚C
NPN Epitaxial Planar Transistors
45 60
5.0
80
5.0
45 60
5.0
1.25
150
W
A
Junction Temperature
Storage , Temperature -65 to +150
BD233 = BD233 , BD235 = BD235 , BD237 = BD237
1. EMITTER
2. COLLECTOR
3. BASE
Power Disspation
2.0
123
Lead(Pb)-Free
P b
WEITRON
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Transition frequency
VCE = 10V, IC = 250mA, f = 10MHz
Collector-Emitter Saturation Voltage
IC = 1.0A, IB = 100mA
hFE(1)
hFE(2)
VCE(sat)
fT
V
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued)
-
3.0
-
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DC Current Gain
VCE = 2.0V, IC = 150mA
VCE = 2.0V, IC = 1.0A
40
25
0.6
-
-
Characteristics Symbol Min Max Unit
Emitter Cutoff Current
VEB = 5.0V, IC=0
Collector Cutoff Current
VCB = 45V, IE=0
VCB = 60V, IE=0
VCB = 100V, IE=0
Collector-Base Breakdown Voltage
IC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage
IC = 100µA, IE = 0
Emitter-Base Breakdown Voltage
IC = 0, IE = 100µA
V(BR)CBO
V(BR)CEO
V(BR)EBO
IEBO
ICBO
1.0
100
V
V
V
µA
mA
BD233/235/237
BD233
BD235
BD237
45
60
100
45
60
80
5.0 -
-
-
-
-
BD233
BD235
BD237
BD233
BD235
BD237
MHz
WEITRON
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Dim
A
B
C
D
E
G
H
J
K
L
M
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
2.900
1.500
0.860
1.370
0.600
7.800
11.000
TO-126
S
TO-126 Outline Dimensions unit:mm
G
E
A
B
C
D
H
S
L
M
J
K
φ
MAX
2.290TYP
4.480
15.300
2.100
3.900
4.680
15.700
2.300
4.100
φφ
3.000 3.200
BD233/235/237