Advance Technical Information IXTH110N10L2 IXTT110N10L2 LinearL2TM Power MOSFET w/ Extended FBSOA VDSS ID25 RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25C to 150C 100 V VDGR TJ = 25C to 150C, RGS = 1M 100 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 110 A IDM TC = 25C, Pulse Width Limited by TJM 300 A IA EAS TC = 25C TC = 25C 110 3 A J PD TC = 25C 600 W Maximum Ratings -55 to +150 C TJM +150 C Tstg -55 to +150 C TJ TL 1.6mm (0.063in) from Case for 10s 300 C TSOLD Plastic Body for 10s 260 C Md Mounting Torque (TO-247) 1.13/10 Nm/lb.in. Weight TO-247 TO-268 6.0 4.0 g g G S D (Tab) G = Gate S = Source BVDSS VGS = 0V, ID = 250A 100 VGS(th) VDS = VGS, ID = 250A 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C VGS = 10V, ID = 0.5 * ID25, Note 1 z z Designed for Linear Operation International Standard Packages Avalanche Rated Integrated Gate Resistor for Easy Paralleling Guaranteed FBSOA at 75C Advantages V z z 4.5 V 100 nA 5 A 50 A z 18 m z z Easy to Mount Space Savings High Power Density Applications z z z (c) 2010 IXYS CORPORATION, All Rights Reserved D = Drain Tab = Drain Features z Characteristic Values Min. Typ. Max. D (Tab) S G z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D TO-268 (IXTT) z RDS(on) = 100V = 110A 18m Solid State Circuit Breakers Soft Start Controls Linear Amplifiers Programmable Loads Current Regulators DS100235(01/10) IXTH110N10L2 IXTT110N10L2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 45 VDS = 10V, ID = 0.5 * ID25, Note 1 55 Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2.2 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd S nF 1585 pF 420 pF 1.8 28 ns 130 ns 99 ns e 24 ns Terminals: 1 - Gate 3 - Source 260 nC 52 nC 106 nC 0.21 C/W RthJC RthCS 65 10.5 Ciss TO-247 (IXTH) Outline TO-247 0.21 C/W Safe Operating Area Specification Symbol Test Conditions Characteristic Values Min. Typ. Max. SOA VDS = 80V, ID = 3.6A, TC = 75C, tp = 5s 360 W 1 2 P 3 Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXTT) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 110 A ISM Repetitive, Pulse Width Limited by TJM 440 A VSD IF = IS, VGS = 0V, Note 1 1.4 V trr IRM QRM IF = 55A, -di/dt = 100A/s, VR = 50V, VGS = 0V 230 19.4 2.2 ns A C Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain Note 1. Pulse test, t 300s; duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH110N10L2 IXTT110N10L2 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 110 300 VGS = 20V 14V 12V 10V 100 90 VGS = 20V 14V 12V 250 10V 70 ID - Amperes ID - Amperes 80 60 8V 50 40 200 150 8V 100 30 20 6V 50 6V 10 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 12 14 16 18 20 Fig. 4. RDS(on) Normalized to ID = 55A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 110 2.8 VGS = 20V 14V 12V 10V 100 90 VGS = 10V 2.4 R DS(on) - Normalized 80 ID - Amperes 10 VDS - Volts VDS - Volts 70 8V 60 50 40 30 I D = 110A 2.0 1.6 I D = 55A 1.2 6V 20 0.8 10 5V 0 0.4 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 55A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 120 3.8 VGS = 10V 3.4 20V TJ = 125C ---- 100 80 ID - Amperes R DS(on) - Normalized 3.0 2.6 2.2 1.8 TJ = 25C 60 40 1.4 20 1.0 0 0.6 0 50 100 150 200 ID - Amperes (c) 2010 IXYS CORPORATION, All Rights Reserved 250 300 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTH110N10L2 IXTT110N10L2 Fig. 8. Transconductance 100 180 90 160 80 140 70 g f s - Siemens ID - Amperes Fig. 7. Input Admittance 200 120 100 80 TJ = 125C 25C - 40C 60 TJ = - 40C 25C 60 125C 50 40 30 40 20 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 Fig. 10. Gate Charge 320 16 280 14 240 12 200 10 VGS - Volts IS - Amperes 100 ID - Amperes 160 120 VDS = 50V I D = 55A I G = 10mA 8 6 TJ = 125C 80 4 TJ = 25C 40 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 50 VSD - Volts 100 150 200 250 300 350 400 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Maximum Transient Thermal Impedance 100,000 1.000 Ciss 10,000 Z (th)JC - C / W Capacitance - PicoFarads f = 1 MHz Coss 1,000 0.100 0.010 Crss 100 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTH110N10L2 IXTT110N10L2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Forward-Bias Safe Operating Area @ T C = 25C @ T C = 75C 1,000 1,000 RDS(on) Limit RDS(on) Limit 25s 25s 100s 1ms 10ms 10 100ms DC 100 100s ID - Amperes ID - Amperes 100 1ms 10 10ms TJ = 150C TJ = 150C TC = 25C Single Pulse TC = 75C Single Pulse 100ms DC 1 1 1 10 VDS - Volts (c) 2010 IXYS CORPORATION, All Rights Reserved 100 1 10 100 VDS - Volts IXYS REF: T_110N10L2(8R)01-22-10