IRF7207PBF - International Rectifier

HEXFET® Power MOSFET

Fifth Generation HEXFET® Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in a

typical PCB mount application.

10/6/04

Description

lGeneration 5 Technology

lP-Channel Mosfet

lSurface Mount

lAvailable in Tape & Reel

lDynamic dv/dt Rating

lFast Switching

VDSS = -20V

RDS(on) = 0.06Ω

IRF7207PbF

Top View

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Parameter Max. Units

VDS Drain- Source Voltage -20 V

ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V -5.4

ID @ TC = 70°C Continuous Drain Current, VGS @ -4.5V -4.3 A

IDM Pulsed Drain Current -43

PD @TC = 25°C Power Dissipation 2.5

PD @TC = 70°C Power Dissipation 1.6

Linear Derating Factor 0.02 W/°C

VGS Gate-to-Source Voltage ± 12 V

VGSM Gate-to-Source Voltage Single Pulse tp<10µs -16 V

EAS Single Pulse Avalanche Energy140

dv/dt Peak Diode Recovery dv/dt -5.0 V/ns

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Parameter Typ. Max. Units

RθJA Maximum Junction-to-Ambient––– 50 °C/W

Thermal Resistance

Absolute Maximum Ratings

SO-8

PD - 95166

lLead-Free

IRF7207PbF

2www.irf.com

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.011 ––– V/°C Reference to 25°C, ID = -1mA

––– ––– 0.06 VGS = -4.5V, ID = -5.4A 

––– ––– 0.10 VGS = -2.7V, ID = -2.7A 

VGS(th) Gate Threshold Voltage -0.7 ––– ––– V VDS = VGS, ID = -250µA

gfs Forward Transconductance 8.3 ––– ––– S VDS = -10V, ID = -5.4A

––– ––– -1.0 VDS = -16V, VGS = 0V

––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C

Gate-to-Source Forward Leakage ––– ––– -100 VGS = 12V

Gate-to-Source Reverse Leakage ––– ––– 100 VGS = -12V

QgTotal Gate Charge ––– 15 22 ID = -5.4A

Qgs Gate-to-Source Charge ––– 2.2 3.3 nC VDS = -10V

Qgd Gate-to-Drain ("Miller") Charge ––– 5.7 8.6 VGS = -4.5V, 

td(on) Turn-On Delay Time ––– 11 ––– VDD = -10V

trRise Time ––– 24 ––– ID = -1.0A

td(off) Turn-Off Delay Time ––– 43 ––– RG = 6.0Ω

tfFall Time ––– 41 ––– RD = 10Ω, 

Ciss Input Capacitance ––– 780 ––– VGS = 0V

Coss Output Capacitance ––– 410 ––– pF VDS = -15V

Crss Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz,

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

µA

Ω

RDS(on) Static Drain-to-Source On-Resistance

IDSS Drain-to-Source Leakage Current

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -3.1A, VGS = 0V 

trr Reverse Recovery Time ––– 42 63 ns TJ = 25°C, IF = -3.1A

Qrr Reverse RecoveryCharge ––– 50 75 nC di/dt = -100A/µs 

Source-Drain Ratings and Characteristics

 

  -43

-3.1

 Repetitive rating; pulse width limited by

max. junction temperature.

ISD ≤ -5.4A, di/dt ≤ -79A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

 Starting TJ = 25°C, L = 9.6mH

RG = 25Ω, IAS = -5.4A.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 When mounted on 1 inch square copper board, t<10 sec

IRF7207PbF

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

100

0.1 1 10

20µs PULSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-2.25V

100

0.1 1 10

20µs PULSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-7.00V

-5.00V

-4.50V

-3.50V

-3.00V

-2.70V

-2.50V

-2.25V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-2.25V

100

2.0 3.0 4.0 5.0 6.0

V = -10V

20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-10V

-5.4A

-4.5V

IRF7207PbF

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

1 10 100

400

800

1200

1600

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

0 5 10 15 20 25 30

Q , Total Gate Charge (nC)

-V , Gate-to-Source Voltage (V)

FOR TEST CIRCUIT

SEE FIGURE

I =

-5.4A

V =-10V

100

1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

= 150 C

= 25 C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)

100us

1ms

10ms

0.1

100

0.4 0.6 0.7 0.9 1.1 1.2 1.4

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

IRF7207PbF

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 9. Maximum Drain Current Vs.

Case Temperature

0.1

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150

0.0

1.0

2.0

3.0

4.0

5.0

6.0

T , Case Temperature ( C)

-I , Drain Current (A)

Fig 10. Maximum Avalanche Energy

Vs. Drain Current

25 50 75 100 125 150

100

200

300

400

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-2.4A

-4.3A

-5.4A

IRF7207PbF

6www.irf.com

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX

MILLIMETERSINCHES

MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BAS IC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] CAB

8X b

0.10 [.004]

4312

F OOT P R I N T

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OU T L I NE CONF OR MS T O J E DE C OU T LI NE MS -012AA.

NOT E S :

1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.

2. CONT ROLL ING DIMENS ION: MILLIMETE R

3. DI ME NS IONS AR E S H OWN I N MI L L IME T E RS [I NCH E S ] .

5 DIMENS ION DOE S NOT INCLUDE MOLD PROT R U S IONS .

6 DIMENS ION DOE S NOT INCLUDE MOLD PROT R U S IONS .

MOLD PROTRUS IONS NOT T O EXCE E D 0.25 [.010].

7 DIMENS ION IS T HE LE NGT H OF LE AD F OR S OL DERING T O

A SUBS T RATE.

MOLD PROTRUS IONS NOT T O EXCE E D 0.15 [.006].

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)

DAT E CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F 7101

Y = LAS T DIGIT OF T HE YE AR

PART NUMBER

LOT CODE

WW = WE E K

EXAMPLE: T HIS IS AN IRF7101 (MOS FET )

P = DE S IGNAT E S L E AD-F R E E

PRODUCT (OPTIONAL)

A = AS S E MB L Y S IT E CODE

IRF7207PbF

www.irf.com 7

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.10/04