CDD190
Diode-Diode Modules
Type
CDD190N08
CDD190N12
CDD190N14
CDD190N16
CDD190N18
VRRM
V
800
1200
1400
1600
1800
VRSM
V
900
1300
1500
1700
1900
Dimensions in mm (1mm=0.0394")
Symbol Test Conditions Maximum Ratings Unit
IFRMS
IFAVM TVJ=TVJM
TC=100oC; 180o sine 300
190 A
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
6600
7290
5600
6200
A
IFSM
TVJ=45oC t=10ms (50Hz), sine
VR=0 t=8.3ms (60Hz), sine
TVJ=TVJM t=10ms(50Hz), sine
VR=0 t=8.3ms(60Hz), sine
218000
221000
157000
160000
A2s
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
oC
VISOL 50/60Hz, RMS t=1min
IISOL<1mA t=1s 3000
3600 V~
MdMounting torque (M6)
Terminal connection torque (M6)
_
2.25-2.75/20-25
4.5-5.5/40-48 Nm/lb.in.
Weight 120 g
3
1
312
i2dt
Typical including screws
2
DEECorp.
http://store.iiic.cc/
CDD190
Diode-Diode Modules
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* Supplies for DC power equipment
* DC supply for PWM inverter
* Field supply for DC motors
* Battery DC power supplies
Symbol Test Conditions Characteristic Values Unit
V
VFIF=300A; TVJ=25oC 1.15
VTO For power-loss calculations only 0.8 V
rT0.8 m
IRTVJ=TVJM; VR=VRRM 20 mA
TVJ=TVJM
per diode; DC current
per module
RthJC 0.21
0.105 K/W
per diode; DC current
per module
RthJK 0.31
0.155 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMaximum allowable acceleration 50 m/s2
uC
QSTVJ=125oC; IF=300A; -di/dt=50A/us 550
IRM 235 A
FEATURES
* International standard package
* Direct copper bonded Al2O3-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
* UL registered, E 72873
DEECorp.
http://store.iiic.cc/
CDD190
Diode-Diode Modules
Fig. 3 Power dissipation versus
forward current and ambient
temperature (per diode)
Fig. 4 Single phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
R = resistive load
L = inductive load
Fig. 1 Surge overload current
IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current
at case temperature
DEECorp.
http://store.iiic.cc/
CDD190
Diode-Diode Modules
Fig. 5 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Fig. 6 Transient thermal impedance
junction to case (per diode)
Fig. 7 Transient thermal impedance
junction to heatsink (per diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.31
180oC0.323
120oC0.333
60oC0.360
30oC0.395
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0087 0.001
2 0.0163 0.065
3 0.185 0.4
4 0.1 1.29
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.210
180oC0.223
120oC0.233
60oC0.260
30oC0.295
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0087 0.001
2 0.0163 0.065
3 0.185 0.4
DEECorp.
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