i 1 Infineon d Rosion BUZ 110S technologies . ymprove SIPMOS Power Transistor Features Product Summary e N channel Drain source voltage Vos 55 IV Enhancement mode Drain-Source on-state resistance | Apsjony|_ 9-01 | Q e Avalanche rated Continuous drain current A e dwdt rated e 175 C operating temperature YPTOS164 Type Package Ordering Code Packaging Pint | Pin2 | Pin3 BUZ110S P-TO220-3-1 | Q67040-S4005-A2 | Tube G D Ss BUZ110S E3045A P-TC263-3-2| Q67040-S4005-A6 | Tape and Reel BUZ110S E3045 P-T0263-3-2| Q67040-S4005-A5 | Tube Maximum Ratings, at 7| = 25 C unless otherwise specified Parameter Symbol Value Unit Continuous drain current Ip A To = 25 C, limited by bond wire 80 To = 100C 66 Pulsed drain current IDpulse 320 To = 25C Avalanche energy, single pulse Ens 460 mJ Ip = 80A, Von =25V, Rag = 252 Avalanche energy, periodic limited by Timax Ear 20 Reverse diode dwadt dwadt 6 kV/us Ig = 80 A, Vpg = 40 V, didt = 200 A/us, Tmax = 175 C Gate source voltage Ves +20 V Power dissipation Prot 200 Ww To = 25C Operating and storage temperature Tj. Tstq -55... +175 C IEC climatic category; DIN IEC 68-1 55/175/56 MB 6235605 0133432 Tle Data Book 710 06.99Infineon technologies BUZ 110S Thermal Characteristics Parameter Symbol Values Unit min. | typ. | max. Characteristics Thermal resistance, junction - case Athuc - - 0.75 | KW Thermal resistance, junction - ambient, leded Rina : - 62 SMD version, device on PCB: Rina @ min. footprint - - 62 @ 6 cm? cooling area) - - 40 Electrical Characteristics, at 7, = 25 C, uniess otherwise specified Parameter Symbol Values Unit min. | typ. | max. Static Characteristics Drain- source breakdown voltage Vierypss} 55 - - |V Ves =0 V, fp = 0.25 mA Gate threshold voltage, Veg = Vos Vesith) 2.1 3 4 Ip = 200 pA Zero gate voltage drain current loss HA Vos = 50 V, Veg = OV, T= 25C - 0.1 1 Vos = 50 V, Vag = 0 V, Tj = 150C - - 100 Gate-source leakage current lass - 10 100 |nA Vag = 20 V, Vos =0V Drain-Source on-state resistance Rosion) Q Vag = 10 V, Ip =66A - 0.009 | 0.01 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70um thick) copper area for drain connection. PCB is vertical without blown air. MB 6235605 0133433 157 Data Book 711 06.99 Infineon technologies Electrical Characteristics, at 7, = 25 C, unless otherwise specified BUZ 110S Parameter Symbol Values min. | typ. | max. Unit Dynamic Characteristics Transconductance Vps22"/p*Fpsionymax 'p = 66 A Is 30 49 Input capacitance Vas = 0 V, Vos = 25 V, f= 1 MHz Ciss 2420 3025 Output capacitance Vas = OV, Vps = 25 V, f= 1 MHz Coss 745 930 Reverse transfer capacitance Veg =0V, Vos = 25 V, f= 1 MHz Ciss 380 475 pF Turn-on delay time Vop = 30 V, Vag = 10 V, Ip =80A, Rg =3.92 tu(on) 20 30 Rise time Vop = 90 V, Veg = 10 V, Ip = 80A, Rg =3.92 35 55 Turn-off delay time Vop = 30 V, Vag = 10 V, Ip = 80A, Rg =3.92 la(off) 45 70 Fall time Vop = 30 V, Vag = 10 V, Ip = 80A, Ag=3.9Q i 30 45 ns M@@ 8235605 01335434 855 Data Book 712 06.99C Infineon wees Electrical Characteristics, at 7; = 25 C, unless otherwise specified Parameter Symbol! Values Unit min. | typ. | max. Dynamic Characteristics Gate to source charge Qgs - 17 26 [nc Vop = 40 V, Ip = 80A Gate to drain charge Qga - 41 61.5 Vop = 40 V, Ip=80A Gate charge total Qg - 85 130 Vop = 40 V, Ip = 804A, Veg = 0 to 10 V Gate plateau voltage Viplateau) | - 5.8 - |v Vop = 40 V, Ip = 80A Reverse Diode inverse diode continuous forward current Ig - - 80 |A To = 25C Inverse diode direct current,pulsed Isua - - 320 Tc = 25C Inverse diode forward voltage Vgp - 1.3 2 |v Vas = 0V, Ip = 160A Reverse recovery time tre - 80 120 [ns Vp = 30 V, Ip=lg , dig/dt = 100 A/us Reverse recovery charge On - 0.17 | 0.25 | uc Va = 30 V, Ipalg , dip/dt = 100 A/us MB 6235605 0133435 721 Data Book 713 06.99oe ( Infineon BUZ 110S technologies Power Dissipation Drain current Prot = f (Te) Ip = # (To) parameter: Veg 2 10 V BUZ110S BUZ1108, 220 w A N 180 \ 70 160 N 60 N B 140 N a 2 N 120 50 \ 100 40 l 30 60 20 40 20 10 5 20 40 60 80 100 120 140 16C 190 Tc Safe operating area Ip = f (Vos) parameter: D=0, To = 25C 10 3 BUZ110S Vos Data Book % 20 40 60 80 100 120 140 16CC 190 Tc Transient thermal impedance 4nsc = F(t) parameter : D = i/T 2th 10 At Li 1 10 10 10% 10% 10? s 10 M@ 4235605 01334356 bbSInfineon technologies BUZ 110S Typ. output characteristics Ip = f(Vps) parameter: f, = 80 ys BUZ1108 190 Pig = 200W A ' 160 140 120 100 80 60 40 20 : %o 05 10 15 20 25 3.0 35 40 V 50 Vds Typ. transfer characteristics [p= f (Vas) parameter: f, = 80 [us Vos 2 2 x Ip x Rpsion) max 80 A lo / / 4.5 A Y 4.0 56 380 35 5.0 v 6.0 * Vas Data Book 7156 Typ. drain-source-on-resistance Foscon) = F (fp) parameter: Ves BUZI10S 0.032 Q 0.024 0.020 Aipsien) 0.016 0.012 0.008 0.004} Yas [MI = c d e t g h i j k ' 80 58 60 65 70 75 8&6 90 100200 0.000 D 20 40 60 80 100 120 140 A 170 _ b Typ. forward transconductance Gs = {); 7] = 25C parameter: g. 55 $s 45 40 35 Tis 30 25 20 15 10 40 50 A 6s 06.99 W@ 8235605 0133437 STY mm- Infineon technologies BUZ 110S Drain-source on-resistance Fos(on) = f(T) parameter : Ip = 66 A, Vag = 10 V BUz110S 0.034 Q 0028 0 024 Rpsvon) 0020 0016 0012 9.008 0 004 0000 -60 +20 20 100 140 C 200 7 Typ. capacitances C =f (Vps) parameter: Vgg = 0 V, f= 1 MHz 104 pF 0 10 20 Vv 40 * Vos Data Book Gate threshold voltage Vescth) = 7) parameter : Veg = Vos, fp = 200 PA 50 Vv a4ar 40 36 VGS(th) 3.2 2.8 24 20 0.4 9.060 -20 20 60 100 140 C 200 fi Forward characteristics of reverse diode le = f(Vep) parameter: qj rb 80 Us 10 3 6UZ110S. 25 C typ 175 C typ T= T= T, = 25 C (98%) 7 = 175 C (98%) 10 0.0 O4 08 12 16 20 24 V 30 Vsp 06.99 MH 8235605 0135394358 430 mmInfineon technologias BUZ 110S Avalanche Energy Ens = f (7) parameter: /p = 80 A, Vpp = 25 V Res = 25 2 mJ 350 Eas 300 250 ta 50 %0 40 60 8 100 120 140 "C 180 7 Drain-source breakdown voltage Veryoss = f(T) BUZ1108 66 Vv 64 62 VieryDss 8 -60 -20 20 60 100 140 C 200 ~ T Data Book 717 Typ. gate charge Vas = f (Qate) parameter: /p puig = 80 A BUZ110S Ves 0 20 40 6 80 100 nO 130 - Qeate 06.99 M@ 8235605 0133439 377Infineon technologies Gehausemabbilder Package Outlines GehadusemaBbilder Package Outlines (MaBe in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified) P-DSO-6-6/-7 Gewicht etwa 0.1 5g 0:88 2008 x45" Approx. weight 0.15 g a . 02 z723 TT] =| Bo | es 214i a 2) nt Le rn. Op aa |! q ine 4 12 LU : | 0.64 10.25 8x | ae oe 4 A ! 6102 . 1 8 5 5 92 af 4 toon > Index Marking (Chamfer) 1) Does not include plastic or metal protrusion of 0.15 max. per side Bild 16 P-TO218-AA (P-TO218-2-1) Gewicht etwa 4.9 g Approx. weight 4.9 g yt Figure 16 15202 49 28M 13 |] 43 50's 2.5203 0.4 A 1) Punch direction, burr max. 0.04 2) Dip tinning 3) Max. 15.5 by dip tinning press burr max. 0.05 radii not dimensioned max, 0.2 GPT0S156 Bild 17 Data Book 1 Mi 4235605 Figure 17 055 06.99 0133774 1145- Infineon technologies Gehause maBbilder Package Outlines P-TO220-3-1 Gewicht etwa 1.8 g 10302 Approx. weight 1.8 g a a 44 4.27201 e 3 0.50.1 .) Typical All metal surfaces tin plated, except area of cut. GPTOS1S5 Bild 18 Figure 18 P-TO251-3-1 Gewicht etwa 2.0 g Approx. weight 2.0 g esis ats +9010 _[0.9%868 q 3x 0.75201 0.57088 456 GPTO9050 All metal surfaces tin plated, except area of cut. Bild 19 Data Book Figure 19 1056 MB 6235605 03433775 O50Infineon technologies GehausemaBbilder Package Outlines P-TO252-3-1. Gewicht etwa 0.38 g Approx. weight 0.38 g 101s 65-0346 2 3100s >A] _, | B4sot | 0.9808 : it q Rn L 2 s} ty = , J in 1 (| 0.15 max 3x s 0...0.15 per side 0.75 20.1 0.5 #008 1201 4.57 $10.25 @IAIB] fe] 0.1] All metal surfaces tin plated, except area of cut. GPT09051 Bild 20 Figure 20 P-T0262-3-1/P?PAK Ax04 | 3 rs 0.50.1 ") Typical Metal surface min. X = 7.25, = 7,35 All metal surfaces tin plated, except area of cut. GPTog244 Bild 21 Figure 21 Data Book 1057 06.99 @@ 8235605 0133776 11?Infineon GehausemaBbilder technologies Package Outlines P-T0263-3-2/DPAK Gewicht etwa 1.38 g 10202 44 Approx. weight 1.38 g 4.27401 " 24 f pe 015201 es max} [5.08] 1} Typical All metal surfaces tin plated, except area of cut. GPTo908S Bild 22 Figure 22 SOT-23 (P-SQT23-3-1) Gewicht etwa 0.01 9 Approx. weight 0.01 g 1.14max | 29201 0.1 max ~ at +02 * py ; -1- ace. to E ty | DINems 6B Bo _ Wy ab = {2 0.4530 j 0.08.0 15 0.95 . 2... 30 [0.25 @B/C| =10.20 @IAl GPS0S5S7 Bild 23 Figure 23 Data Book 1058 06.99 @ 8235605 0133777 12e3Infineon GehadusemaBbilder lechnologies Package Outlines SOT-89. Gewicht etwa 0.01 g Approx. weight 0.01 g ace. to 5 DIN 6784 D G D 0.25 min GPS05558 Bild 24 Figure 24 SOT-223 (P:SOT223-4-1) Gewicht etwa 0.15 g Approx. weight 0.15 g 6.5102 1.60.1 ais 3201 0.1 max -_ (eB) tL ee ie Yt a PX Is | oO ET aT of i, 07:01 [2.3] 0.28.04 10.25 @A] =10.25 @[8] GPS05560 Bild 25 Figure 25 Data Book 1059 06.99 M@@ 6235605 0133778 S&TGehausemaBbilder ( Infineon technologies Package Outlines TO-92 Gewicht etwa 0.23 g Approx. weight 0.23 g 1 2 3 Hil = i~ 4202 . 34 e w 2 a ~ 4 _ { 9.4 GPT05158 Bild 26 Figure 26 TO-92-E6288 Gewicht etwa 0.23 g Approx. weight 0.23 g \ 2 8 af chy = 4 5.2 92 4.292 x _ 4 x a 2 3 ' 3 2, = 0.4% GPT05548 Bild 27 Figure 27 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book Package Information. SMD = Surface Mounted Device Data Book 1060 06.99 MH 8235605 0133779 ?Tb =