ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW30N135R3 Datasheet IndustrialPowerControl IHW30N135R3 ResonantSwitchingSeries ReverseconductingIGBTwithmonolithicbodydiode Features: C *Offersnewhigherbreakdownvoltageto1350Vforimproved reliability *Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly *TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat *LowEMI *QualifiedaccordingtoJESD-022fortargetapplications *Pb-freeleadplating;RoHScompliant *Halogenfree(accordingtoIEC61249-2-21) *CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G G C E E Applications: *Inductivecooking *Inverterizedmicrowaveovens *Resonantconverters *Softswitchingapplications Packagepindefinition: *Pin1-gate *Pin2&backside-collector *Pin3-emitter KeyPerformanceandPackageParameters Type IHW30N135R3 VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 1350V 30A 1.65V 175C H30R1353 PG-TO247-3 2 Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emitter voltage VCE 1350 V DCcollectorcurrent,limitedbyTvjmax TC=25C TC=100C IC 60.0 30.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A TurnoffsafeoperatingareaVCE1350V,Tvj175C - 90.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25C TC=100C IF 60.0 30.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A Gate-emitter voltage TransientGate-emittervoltage(tp10s,D<0.010) VGE 20 25 V PowerdissipationTC=25C PowerdissipationTC=100C Ptot 349.0 175.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+175 C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.43 K/W Diode thermal resistance, junction - case Rth(j-c) 0.43 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 1350 - - VGE=15.0V,IC=30.0A Tvj=25C Tvj=125C Tvj=175C - 1.65 1.90 2.00 1.85 - - 1.65 1.80 1.90 1.85 6.4 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=30.0A Tvj=25C Tvj=125C Tvj=175C Gate-emitter threshold voltage VGE(th) IC=0.75mA,VCE=VGE 5.1 5.8 Zero gate voltage collector current ICES VCE=1350V,VGE=0V Tvj=25C Tvj=175C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=30.0A - 25.6 - S Integrated gate resistor rG V V 100.0 A 2500.0 none ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2066 - - 67 - - 58 - - 263.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=1080V,IC=30.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25C, VCC=600V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0,RG(off)=10.0, L=220nH,C=40pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. - 337 - ns - 47 - ns - 1.93 - mJ dv/dt=150.0V/s - 0.41 - mJ IGBTCharacteristic,atTvj=25C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Turn-off energy, soft switching Eoff 5 Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=175C, VCC=600V,IC=30.0A, VGE=0.0/15.0V, RG(on)=10.0,RG(off)=10.0, L=220nH,C=40pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. - 410 - ns - 100 - ns - 3.50 - mJ dv/dt=150.0V/s - 0.82 - mJ IGBTCharacteristic,atTvj=175C Turn-off delay time td(off) Fall time tf Turn-off energy Eoff Turn-off energy, soft switching Eoff 6 Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries 100 350 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 300 10 tp=1s 5s 10s 50s 1ms 1 10ms 250 200 150 100 DC 50 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 75 100 125 150 175 TC,CASETEMPERATURE[C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25C,Tvj175C;VGE=15V) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj175C) 60 90 80 VGE=20V 50 17V IC,COLLECTORCURRENT[A] 70 IC,COLLECTORCURRENT[A] 50 40 30 20 15V 60 13V 11V 50 9V 40 7V 5V 30 20 10 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[C] 0.0 1.0 2.0 3.0 4.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE15V,Tvj175C) Figure 4. Typicaloutputcharacteristic (Tvj=25C) 7 Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries 90 90 80 17V 70 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 80 VGE=20V 70 15V 60 13V 11V 50 9V 40 7V 5V 30 60 50 40 30 20 20 10 10 0 0 Tj=25C Tj=175C 1 2 3 0 4 4 VCE,COLLECTOR-EMITTERVOLTAGE[V] 6 7 8 9 10 11 12 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175C) Figure 6. Typicaltransfercharacteristic (VCE=20V) 3.0 1000 IC=15A IC=30A IC=60A td(off) tf 2.5 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 5 2.0 100 1.5 1.0 0 25 50 75 100 125 150 10 175 Tvj,JUNCTIONTEMPERATURE[C] 0 10 20 30 40 50 60 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,RG(on)=10,RG(off)=10,dynamic test circuit in Figure E) 8 Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries 1000 td(off) tf td(off) tf t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 0 10 20 30 40 100 10 50 25 RG,GATERESISTANCE[] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,IC=30A,dynamictestcircuitin Figure E) 100 125 150 175 7 typ. min. max. 6 7 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=30A,RG(on)=10,RG(off)=10,dynamic test circuit in Figure E) 8 6 5 4 3 2 50 Tvj,JUNCTIONTEMPERATURE[C] Eoff 5 4 3 2 1 0 25 50 75 100 125 150 0 175 Tvj,JUNCTIONTEMPERATURE[C] 0 10 20 30 40 50 60 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.75mA) 9 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,RG(on)=10,RG(off)=10, dynamic test circuit in Figure E) Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries 5.00 4 Eoff Eoff E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 4.75 4.50 4.25 4.00 3.75 3.50 3 2 3.25 3.00 0 10 20 30 40 1 50 25 RG,GATERESISTANCE[] 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=175C,VCE=600V, VGE=0/15V,IC=30A,dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=600V,VGE=0/15V, IC=30A,RG(on)=10,RG(off)=10,dynamic test circuit in Figure E) 8 3.0 Eoff Tj=C Tj=C E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 7 6 5 4 3 2 2.5 2.0 1.5 1.0 0.5 1 0 400 600 800 1000 1200 1400 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175C,VGE=0/15V, IC=30A,RG(on)=10,RG(off)=10,dynamic test circuit in Figure E) 0.0 100 1000 dv/dt,VOLTAGESLOPE[V/s] 10 Figure 16. Typicalturnoffswitchingenergylossfor softswitching (inductiveload,Tvj=175C,VGE=0/15V, IC=30A,RG=10,dynamictestcircuitin Figure E) Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries 16 1E+4 270V 1080V Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 1000 100 4 2 0 0 50 100 150 200 250 10 300 QGE,GATECHARGE[nC] 10 15 20 25 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 1 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 1 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 17. Typicalgatecharge (IC=30A) D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 3.5E-3 0.084474 0.13208 0.20072 9.7E-3 1.7E-3 i[s]: 2.8E-5 3.2E-4 3.0E-3 0.01594952 0.2164969 2.629558 0.001 1E-6 0 1E-5 1E-4 0.001 0.01 0.1 D=0.5 0.2 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 3.5E-3 0.084474 0.13208 0.20072 9.7E-3 1.7E-3 i[s]: 2.8E-5 3.2E-4 3.0E-3 0.01594952 0.2164969 2.629558 0.001 1E-6 1 tp,PULSEWIDTH[s] 0.1 0.1 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 19. IGBTtransientthermalresistance (D=tp/T) Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 11 Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries 60 3.0 Tj=25C Tj=175C IF=15A IF=30A IF=60A 2.5 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 50 40 30 20 1.5 1.0 10 0 2.0 0.0 0.5 1.0 1.5 2.0 2.5 0.5 3.0 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 21. Typicaldiodeforwardcurrentasafunction offorwardvoltage 12 Figure 22. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries PG-TO247-3 13 Rev.2.2,2015-01-26 IHW30N135R3 ResonantSwitchingSeries VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 14 Rev.2.2,2015-01-26 IHW30N135R3 Resonant Switching Series Revision History IHW30N135R3 Revision: 2015-01-26, Rev. 2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2012-10-12 Final data sheet 2.2 2015-01-26 Minor changes We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 Munchen, Germany (c) 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 Rev. 2.2, 2015-01-26