ResonantSwitchingSeries
ReverseconductingIGBTwithmonolithicbodydiode
IHW30N135R3
Datasheet
IndustrialPowerControl
2
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
ReverseconductingIGBTwithmonolithicbodydiode
Features:
•Offersnewhigherbreakdownvoltageto1350Vforimproved
reliability
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOPTMtechnologyoffering:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowVCEsat
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogenfree(accordingtoIEC61249-2-21)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Inductivecooking
•Inverterizedmicrowaveovens
•Resonantconverters
•Softswitchingapplications
Packagepindefinition:
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
G
C
E
G
C
E
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IHW30N135R3 1350V 30A 1.65V 175°C H30R1353 PG-TO247-3
3
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
4
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1350 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC60.0
30.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 90.0 A
TurnoffsafeoperatingareaVCE≤1350V,Tvj≤175°C - 90.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF60.0
30.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20
±25 V
PowerdissipationTC=25°C
PowerdissipationTC=100°C Ptot 349.0
175.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+175 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
junction - case Rth(j-c) 0.43 K/W
Diode thermal resistance,
junction - case Rth(j-c) 0.43 K/W
Thermal resistance
junction - ambient Rth(j-a) 40 K/W
5
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1350 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.65
1.90
2.00
1.85
-
-
V
Diode forward voltage VF
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.65
1.80
1.90
1.85
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.75mA,VCE=VGE 5.1 5.8 6.4 V
Zero gate voltage collector current ICES
VCE=1350V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
100.0
2500.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=30.0A - 25.6 - S
Integrated gate resistor rGnone Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 2066 -
Output capacitance Coes - 67 -
Reverse transfer capacitance Cres - 58 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=1080V,IC=30.0A,
VGE=15V - 263.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-off delay time td(off) - 337 - ns
Fall time tf- 47 - ns
Turn-off energy Eoff - 1.93 - mJ
Tvj=25°C,
VCC=600V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=10.0Ω,
Lσ=220nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-off energy, soft switching Eoff dv/dt=150.0V/µs - 0.41 - mJ
6
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-off delay time td(off) - 410 - ns
Fall time tf- 100 - ns
Turn-off energy Eoff - 3.50 - mJ
Tvj=175°C,
VCC=600V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=10.0Ω,RG(off)=10.0Ω,
Lσ=220nH,Cσ=40pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Turn-off energy, soft switching Eoff dv/dt=150.0V/µs - 0.82 - mJ
7
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
100
tp=1µs
5µs
10µs
50µs
1ms
10ms
DC
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0.0 1.0 2.0 3.0 4.0
0
10
20
30
40
50
60
70
80
90
VGE=20V
17V
15V
13V
11V
9V
7V
5V
8
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
Figure 5. Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0 1 2 3 4
0
10
20
30
40
50
60
70
80
90
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
4 5 6 7 8 9 10 11 12
0
10
20
30
40
50
60
70
80
90
Tj=25°C
Tj=175°C
Figure 7. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
0 25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
IC=15A
IC=30A
IC=60A
Figure 8. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 10 20 30 40 50 60
10
100
1000
td(off)
tf
9
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,IC=30A,dynamictestcircuitin
Figure E)
RG,GATERESISTANCE[Ω]
t,SWITCHINGTIMES[ns]
0 10 20 30 40 50
10
100
1000
td(off)
tf
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=600V,VGE=0/15V,
IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
10
100
1000
td(off)
tf
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.75mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
0 25 50 75 100 125 150 175
2
3
4
5
6
7
8
typ.
min.
max.
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,RG(on)=10Ω,RG(off)=10Ω,
dynamic test circuit in Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 10 20 30 40 50 60
0
1
2
3
4
5
6
7
Eoff
10
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=175°C,VCE=600V,
VGE=0/15V,IC=30A,dynamictestcircuitin
Figure E)
RG,GATERESISTANCE[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
0 10 20 30 40 50
3.00
3.25
3.50
3.75
4.00
4.25
4.50
4.75
5.00
Eoff
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=600V,VGE=0/15V,
IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
1
2
3
4
Eoff
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=175°C,VGE=0/15V,
IC=30A,RG(on)=10Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
400 600 800 1000 1200 1400
0
1
2
3
4
5
6
7
8
Eoff
Figure 16. Typicalturnoffswitchingenergylossfor
softswitching
(inductiveload,Tvj=175°C,VGE=0/15V,
IC=30A,RG=10Ω,dynamictestcircuitin
Figure E)
dv/dt,VOLTAGESLOPE[V/µs]
E,SWITCHINGENERGYLOSSES[mJ]
100 1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Tj=°C
Tj=°C
11
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
Figure 17. Typicalgatecharge
(IC=30A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 50 100 150 200 250 300
0
2
4
6
8
10
12
14
16
270V
1080V
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
10
100
1000
1E+4
Cies
Coes
Cres
Figure 19. IGBTtransientthermalresistance
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
3.5E-3
2.8E-5
2
0.084474
3.2E-4
3
0.13208
3.0E-3
4
0.20072
0.01594952
5
9.7E-3
0.2164969
6
1.7E-3
2.629558
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
3.5E-3
2.8E-5
2
0.084474
3.2E-4
3
0.13208
3.0E-3
4
0.20072
0.01594952
5
9.7E-3
0.2164969
6
1.7E-3
2.629558
12
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
Figure 21. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
50
60
Tj=25°C
Tj=175°C
Figure 22. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
0 25 50 75 100 125 150 175
0.5
1.0
1.5
2.0
2.5
3.0
IF=15A
IF=30A
IF=60A
13
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
PG-TO247-3
14
IHW30N135R3
ResonantSwitchingSeries
Rev.2.2,2015-01-26
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
Et
tV I t
off = x x d
1
2
CE C
Et
tV I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
15
IHW30N135R3
Resonant Switching Series
Rev. 2.2, 2015-01-26
Revision History
IHW30N135R3
Revision: 2015-01-26, Rev. 2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2012-10-12 Final data sheet
2.2 2015-01-26 Minor changes
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