SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A Z % RT ... Replacement Type; consult manufacturer. Indicators of separate manufacturers producing same type number (non-JEDEC) whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D.A.1.A.) is an integral part of the type number {in Type No. Cross Index, Technical Data Sections) to avoid the possibility of confusing the devices of one manufacturer with the devices of others. SYMBOLS & CODES COMMON TO MORE THAN ONE TECHNICAL SECTION LINE No. Vv New Type Revised Specifications # Non-JEDEC Type manufactured t_ @- TYPE No. outside U.S.A. i 6 , i LINE TYPE OLL. IN |M E[BVel No. No. DISS. | fab [FREE |A M @25C AIR. [XP Ww we vi ; @ With infinite heat sink Following symbols indicate temperature at which derating starts: T- 40c i- ec = 100% * 45C - 7C 4 Min. #-~ 50C =A 85C T- tae Gain bandwidth product (f,) %* Maximum frequency of oscillation QD ~ Figure of merit (frequency for unity power gain} A Minimum Z- Maximum Q ~ With infinite heat sink E * 50-65C A Ambient 70-80c C Case # - 85-100C J Junction # 110-125C S Storage T 130-135C $ 140-165C 170-200C Over 200C STRUCTURE (All Sections A Alloy Except 6 & 7} Switching type, also listed in Section 12 AN Annular - a . . D ~ Diffused or drift Chopper, also listed in Section 13, Category 10 pM Diftused These types also included elsewhere with other E 7 E, tons fee characteristics. See Type No. Cross Index for pt axial : EA Epitaxial annular alternate line no. EM Epitaxial mesa Radiation Resistant Devices, also listed in FE _ Feeed Section 13, Category 13, G ~ Grown GA Gallium Arsenide H Hometaxial MA Mico alloy MD Micro alloy diffused ME Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alioy diffused PE Ptanar epitaxial PL Planar Ss Surface barrier * Matched pair A Switching, other uses Z Chopper, other uses Z Noise figure 8db or below t Plastic package % Overlay ye i \ I ' Mai , cao |BVebo | Icbo. BIAS Cob |STRUC|Y200 le 0 le @MAX! Veb le hfe hoe hie hre -TURE | s/a JAD Veb TO200/D E Vv) A) Al Vv (A) mh 1 Ser, 9 fe QD lo A- lp b h parameters are Pope Pine Mb 74] Maximum D Vee 0) t- Nee A Minimum Pulsed Maximum At Va, Max. V., (See Mfr. Spec.) # aise 68 CB 8 hee Typical CEX yptca %* Available in selected ranges -1 * ~ 'cER CES AtTemp.> 28 =A 'cEO ~ AtTemp. 25C Case # Pulsed or Peak ~ i hb - q iis 7] Maximum $ Co T-c, $ Minimum po $ Tetrode # - BVcex or punch-through D av # Radiation Resistant Device CES (A - BV eo (sus) {Also See Above) .- BVoER * Pulsed $- Indicates min. valves given for BY cb, EV ceo, and BV abo, IN ORDER OF (1) MAX COLLECTOR DISSIPATION IN| |ME Icbo Cob /STRUC/Y200 |E O DISS. | fab FREE |A M @MAX -TURE | s/a_ |AD @28C AIR P Veb T0200/D E 106105 1 130M5 | . 30uS |1.08 | - ; X36 D10G1081 130M5 : 30ud | 1.00 , X36 11G702 250M$ , O1up TO50 . u 11G1053 250M5 O1ud u40 MM1757 250MSA : O1ugd T046 10D702 500MS , 01ud TO50 a . u A1409 125MA ; 500n TOS m . $T3031 70.M |115u . 1.0u , . TOS . . u TMT2427 50.M Otu * $T3043 1.0M * u . . : . 2N2933 * | 20M5A|625u : G1ug * u . . BC156A 50m* | 50M8A|625u . . : 100n * * u . . BF228 50m* | 5OM8A|625u 500u * u . A151 50m |150M8 |625u : 10nd u BC112 50m* |150M8A|625u * u BF229 5Om* |260M |625u * u BC197B 50m* |300M /625u * u BC198B 50m* /300M (625u * BC 1998 5O0m* {300M |625u * u BF227 5Om* |G00MS |625u u BFY23A 62m 20M8 |625u m u . . : . RT929H 70m 30M8A ; Olu m . BC127 75m 30M8 . 20n * FSP 165 78m 370M5 7510 : 100nD BFX75 80m |230M5 02682 90m A1519 100m FSP42 100m FSP 166-1 100m NS3001% 100m NS305 100m PMTO12 100m PMTO15$ 100m PMTO19 100m PMT111 100m PMT114 100m 10% SYMBOLS AND CODES 52 DA.T.A. EXPLAINED IN INTERPRETER 52