8Y LOW NOISE AMPS N-Channel FETs BV, 1 Vv en Transistor Case BVane ipeo (v) ov I 'DSs Sts Soss Ciss Crss (x ) Process Type Style V) @ Ig (nA) @ Vg DS D (ma) @ Vos {mMho) @ Vpg |} (uMho) @ Vpg | (pPF}@ Vps Vas! tpF}Vaps Ves Jitz /@ Freq No. Min Gear | Mex tur | Min. Max (Y) (ma) | Min Max () | Min Max (V) | Max (V} | Max (Vi (VP | Max (Mi (MPL Max tHe) 2nz089 | To18 | 15 31 | 4 10 | a8 15 100 [05 2 10 |o3 2 15 sos | BUS Cd 15-0 | 125 avg 10-15k] 52 2nszosga | Tors | 15 1 | 4 1 | i 5 15 100 }05 2 10 |o3 2 15 so 61s | 6@)6hU1S Cn | 2 150 | 45 avg 10-15k] 52 2ns4s9 | To18 | sor 1 | 0.25 30 34 2 100o]o8 4 2 115 6 20 2 630 | 1 Oo -6] 5 30 Oo | 15520 52 2nz460 | To18 | 50* 1 | 0.25 30 18 2 1wo0ojo2 1 20 |08 45 20 5 30 | 18 0 415 30 0 | 155 20 52 2nagz3ag._ | To1s | 50 1 | 01 30 | 03 1 1s 41 [02 o8 158 {06 18 15 5 1 | 7 15 00 | 3 1s 0 | 70 1000 52 2n4z39 | Tors | 50 1] 01 a0 | o6 18 1 + {os 15 1 los 24 15 65 6 | 7 6 of] 3 150 | 70 1000 52 2n4z4a | tows | 50 1] 01 3041 3 is 4 412 36 1 13 3 15 3 #1 | 7 6 of 3 1s 0 | 70 1000 52 2nazaa | tors | 50 1/101 30 [2 6 1 4 43 9 6 |2 4 45 co i [7 15 o | 3 1s 0 (| (70 1000 52 2N4867 | TO-72 | 40 1 | 0.25 30 | 07 2 20 1000)04 4.2 2 107 2 2 150-20: | 20 20 COO 2 0 | 2 WwW ar 2nags7a | To-72 | 40 1 | 025 30 | 07 2 20 100}o4 12 2 |o7 2 ~~ # 2 15020 | 2 dd 22 0 | 10) 87 anasea. | to-72 | 40 1 | 025 30 | 1 3 20 1000] 4 3 20 |4 3 20 4 20 | 2 2 20 | 5 2 209 | 20 310 57 anasesa | To-72 | 40 1 | 025 30 | 1 2 20 1000] 1 3 2 |4 3 20 4 20 | 2 2 +o | 5 2 o | i 10 57 2naseg9 | to.72 | 40 1 | 025 30 | 18 5 20 1000/28 75 20 113 4 2 10 )= 20 | 25 isd 2 o | 2 #10 57 2nasega | To-72 | 40 1 | 025 30 | 18 5 20 1000/25 75 2 113 4 ~~ 20 10060 20 | 2 lO | 2 20 {10 6110 57 xezesa | To10e| 50 31 | 4 33 | 2 5 2 1 25 75 2 |2 3 20 so 6020 dE 4 oC dt) 2S sd| 150 20 52 Keaeas | To-106} 50 1 | 1 30 | 1 35 2 1 1 3 2 115 25 20 2 2/14 20 +o | i2 2 o | 150 2 52 xesese | to-r06| so 1 | 1 30 | o6 2 2 1 04 12 2 4|1 2 20 1060 20 | A) CO te) 6200S isd 58020 52 Keses7 | To10e| so 1 | 1 30} 03 12 2 1 01 08 20 |o5 15 20 5 2 | 4 2 of 12 2 +o | 150 2 52 N-Channel FETs ULTRA-LOW INPUT CURRENT AMPS BVGss less Vp Ipss Gt, Goss Ciss Crss hy ey Transistor | Case | BVGDo IpGo (Vv) @Vpg_ ip (uA) @Vpg] (uMho) @ Vpg | (uMho} @ Vpg | (PF)@ Vpg Veg] (pF}@Vps Ves A) @ ft Process Type | Style | (VI @ ig | (PAI@VOG | win Max (Vv) (mal | Min Max (Vv) | Min Max (Vv) | Max = (v) | Max (Vv) tv) | max) | Max (Hz) Min (uA) | Max (V} 2nai17_ | 10-72] 40 4 10 620 | 06 18 10 1 | 30 90 1 | 2 20 10 | 3 10 | 3 1 o [15 10 53 anaiiza | To-72]| 40 1 1 2 | 06 18 10 1 | 30 90 10 | 7 210 10 | 3 10 | 3 1 0 |15 10 oO 53 anata | To72| 40 1 10067 dT 8 10 1 | 80 240 10 | 80 250 10 | 5 10 | 3 10 o |15 10 0 53 2naziga | 70-72] 40 1 1 2 |i 3 10 1 | 80 240 10 | 80 250 10 | 5 10 | 3 10 600 [15 10 O 53 anarig | roO-72]| 40 1 10020 dF 2g 10 1 | 200 600 10 | 100 330 10 10 1o | 3 10 0 1145 10 9 53 anaiiga | T0-72| 40 1 1 2 | 2 6 10 1 | 200 600 10 | 100 330 i0 10 io | 3 70 60 6 bas) OOO 53