MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FETMICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
MICROWAVE
MICROWAVE MICROWAVE
MICROWAVE SEMICONDUCTOR
SEMICONDUCTOR SEMICONDUCTOR
SEMICONDUCTOR
TIM5964-35SLA-251
TIM5964-35SLA-251TIM5964-35SLA-251
TIM5964-35SLA-251
TECHNICAL DATA
TECHNICAL DATATECHNICAL DATA
TECHNICAL DATA
FEATURES
FEATURESFEATURES
FEATURES
LOW INTERMODULATION DISTORTION
HIGH EFFICI ENCY
IM3=-45 dBc at Po= 35.0dBm, ηadd= 39% at 5.9 to 6.75GHz
Single Carrier Level
HIGH G AIN
HIGH POWER G1dB=8.5dB at 5.9GHz to 6.75GHz
P1dB=45.5dBm at 5.9GHz to 6.75GHz
BROAD B AND INTERNALLY MATCHED
HERMETICAL LY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°
°°
°C )
CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX.
Output Power at 1dB
Compression Point P1dB dBm 45.0 45.5
Power Gain at 1dB
Compression Point G1dB dB 8.0 9.0
Drain Curr ent IDS1 A8.0 9.0
Gain Flatness ∆GdB±0.8
Power Added Efficiency ηadd
VDS= 10V
f = 5.9 – 6.75GHz
%39
3rd Order Intermodulation
Distortion IM3dBc -42 -45
Drain Curr ent IDS2
Two Tone Test
Po=35.0dBm
(Single Carrier Level) A8.0 9.0
Channel Temperature Rise ∆Tch VDS X IDS X Rth(c-c) °C100
Recommended gate resistance(Rg) : Rg=Rg1(10 Ω
ΩΩ
Ω)+
++
+Rg2(18 Ω
ΩΩ
Ω)= 28 Ω
ΩΩ
Ω
(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°
°°
°C )
CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX.
Transconductance gm VDS= 3V
IDS= 10.5A mS 6500
Pinch-off Voltage VGSoff VDS= 3V
IDS= 140mA V -1.0 -2.5 -4.0
Saturated Drain Curr ent IDSS VDS= 3V
VGS= 0V A20 26
Gate-Source Breakdown
Voltage VGSO IGS= -420µAV-5
Thermal Resistance Rth(c-c) Channel to Case °C/W 1.0 1.3
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by impli cation or other wi se un der any patent or patent rights of TOSHIBA or ot he rs.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceedi n g wit h design of equipment incorpo rating this product.
Revised Aug. 2000