K7A403600B-PC16000 - SAMSUNG - Datasheet.Directory

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 1 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

4Mb Sync. Pipelined Burst SRAM

100 TQFP with Pb & Pb-Free

(RoHS compliant)

* Samsung Electronics reserves the right to change products or specification without notice.

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.

ALL INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-

lar applications where Product failure could result in loss of life or personal or physical harm, or any military

or defense application, or any governmental procurement to which special terms or provisions may apply.

Specification

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 2 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

Document Title

128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM

Revision History

Remark

Preliminary

Final

History

1. Initial draft

1. Changed DC parameters

Icc ; from 350mA to 290mA at -16,

from 330mA to 270mA at -15,

from 300mA to 250mA at -14,

ISB1; from 100mA to 80mA

1. Delete Pass-Through

1. Add x32 org. and industrial temperature

1. Final spec release

2. Changed Pin Capacitance

- Cin ; from 5pF to 4pF

- Cout; from 7pF to 6pF

1. Add Pb-free package

Draft Date

May. 15. 2001

June. 12. 2001

June.25. 2001

Aug. 11. 2001

Nov. 15. 2001

Jul. 03. 2006

Rev. No

0.0

0.1

0.2

0.3

1.0

2.0

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 3 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

Note 1. P(Q) [Package type]: P-Pb Free, Q-Pb

2. C(I) [Operating Temperature]: C-Commercial, I-Industrial

3. Support only Pb package parts at this frequency. To use Pb-Free package, use faster frequency parts.

Org. VDD (V) Speed (ns) Access Time (ns) Part Number RoHS Avail.

256Kx18 3.3 6.0 3.5 K7A401800B-P(Q)1C(I)216 √

3.3 7.2 4.0 K7A401800B-Q3C(I)14 •

128Kx32 3.3 6.0 3.5 K7A403200B-P(Q)1C(I)216 √

3.3 7.2 4.0 K7A403200B-Q3C(I)14 •

128Kx36 3.3 6.0 3.5 K7A403600B-P(Q)1C(I)216 √

3.3 7.2 4.0 K7A403600B-Q3C(I)14 •

4Mb SPB SRAM Ordering Information

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 4 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM

The K7A403600B, K7A403200B and K7A401800B are

4,718,592-bit Synchronous Static Random Access Memory

designed for high performance second level cache of Pen-

tium and Power PC based System.

It is organized as 128K(256K) words of 36(18) bits and inte-

grates address and control registers, a 2-bit burst address

counter and added some new functions for high perfor-

mance cache RAM applications; GW, BW, LBO, ZZ. Write

cycles are internally self-timed and synchronous.

Full bus-width write is done by GW, and each byte write is

performed by the combination of WEx and BW when GW is

high. And with CS1 high, ADSP is blocked to control signals.

Burst cycle can be initiated with either the address status

processor (ADSP) or address status cache controller

(ADSC) inputs. Subsequent burst addresses are generated

internally in the system′s burst sequence and are controlled

by the burst address advance(ADV) input.

LBO pin is DC operated and determines burst sequence(lin-

ear or interleaved).

ZZ pin controls Power Down State and reduces Stand-by

current regardless of CLK.

The K7A403600B, K7A403200B and K7A401800B are fab-

ricated using SAMSUNG′s high performance CMOS tech-

nology and is available in a 100pin TQFP package. Multiple

power and ground pins are utilized to minimize ground

bounce.

GENERAL DESCRIPTIONFEATURES

LOGIC BLOCK DIAGRAM

• Synchronous Operation.

• 2 Stage Pipelined operation with 4 Burst.

• On-Chip Address Counter.

• Self-Timed Write Cycle.

• On-Chip Address and Control Registers.

• VDD= 3.3V+0.3V/-0.165V Power Supply.

• VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O

or 2.5V+0.4V/-0.125V for 2.5V I/O.

• 5V Tolerant Inputs Except I/O Pins.

• Byte Writable Function.

• Global Write Enable Controls a full bus-width write.

• Power Down State via ZZ Signal.

• LBO Pin allows a choice of either a interleaved burst or a linear

burst.

• Three Chip Enables for simple depth expansion with No Data Cont-

nention; 2cycle Enable, 1cycle Disable.

• Asynchronous Output Enable Control.

• ADSP

, ADSC, ADV Burst Control Pins.

• TTL-Level Three-State Output.

• 100-TQFP-1420A.

• Operating in commercial and industrial temperature range.

CLK

LBO

ADV

ADSC

ADSP

CS1

CS2

WEx

DQa0 ~ DQd7

BURST CONTROL

LOGIC

BURST 128Kx36/32, 256Kx18

ADDRESS

CONTROL OUTPUT

DATA-IN

ADDRESS

COUNTER

MEMORY

ARRAY

BUFFER

LOGIC

CONTROL

′

0~A

′

A0~A1

or A2~A17

A0~A16

DQPa ~ DQPd

or A0~A17

A2~A16

(x=a,b,c,d or a,b)

or DQa0 ~ DQb7

DQPa ~ DQPb

36/32 or 18

FAST ACCESS TIMES

PARAMETER Symbol -16 -14 Unit

Cycle Time tCYC 6.0 7.2 ns

Clock Access Time tCD 3.5 4.0 ns

Output Enable Access Time tOE 3.5 4.0 ns

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 5 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

PIN CONFIGURATION

(TOP VIEW)

100 Pin TQFP

(20mm x 14mm)

DQPc/NC

DQc

DDQ

SSQ

DQc

SSQ

DDQ

DQc

N.C.

DQd

DDQ

SSQ

DQd

SSQ

DDQ

DQd

DQPd/NC

DQPb/NC

DQb

DDQ

SSQ

DQb

SSQ

DDQ

DQb

N.C.

DQa

DDQ

SSQ

DQa

SSQ

DDQ

DQa

DQPa/NC

100

WEd

WEc

WEb

WEa

CLK

ADSC

ADSP

ADV

81 A

N.C.

LBO

PIN NAME

SYMBOL PIN NAME TQFP PIN NO. SYMBOL PIN NAME TQFP PIN NO.

A0 - A16

ADV

ADSP

ADSC

CLK

CS1

CS2

WEx

(x=a,b,c,d)

LBO

Address Inputs

Burst Address Advance

Address Status Processor

Address Status Controller

Clock

Chip Select

Byte Write Inputs

Output Enable

Global Write Enable

Byte Write Enable

Power Down Input

Burst Mode Control

32,33,34,35,36,37

44,45,46,47,48,49

50,81,82,99,100

93,94,95,96

VDD

VSS

N.C.

DQa0~a7

DQb0~b7

DQc0~c7

DQd0~d7

DQPa~Pd

/NC

VDDQ

VSSQ

Power Supply(+3.3V)

Ground

No Connect

Data Inputs/Outputs

Output Power Supply

(2.5V or 3.3V)

Output Ground

15,41,65,91

17,40,67,90

14,16,38,39,42,43,66

52,53,56,57,58,59,62,63

68,69,72,73,74,75,78,79

2,3,6,7,8,9,12,13

18,19,22,23,24,25,28,29

51,80,1,30

4,11,20,27,54,61,70,77

5,10,21,26,55,60,71,76

K7A403600B(128Kx36)

K7A403200B(128Kx32)

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 6 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

PIN CONFIGURATION(TOP VIEW)

N.C.

VDDQ

VSSQ

N.C.

DQb0

DQb1

VSSQ

VDDQ

DQb2

DQb3

N.C.

VDD

N.C.

VSS

DQb4

DQb5

VDDQ

VSSQ

DQb6

DQb7

DQPb

N.C.

VSSQ

VDDQ

N.C.

A10

N.C.

VDDQ

VSSQ

N.C.

DQPa

DQa7

DQa6

VSSQ

VDDQ

DQa5

DQa4

VSS

N.C.

VDD

DQa3

DQa2

VDDQ

VSSQ

DQa1

DQa0

N.C.

VSSQ

VDDQ

N.C.

100

CS1

CS2

N.C.

WEb

WEa

CS2

VDD

VSS

CLK

ADSC

ADSP

ADV

81 A9

A17

A16

A15

A14

A13

A12

A11

N.C.

VDD

VSS

N.C.

LBO

PIN NAME

SYMBOL PIN NAME TQFP PIN NO. SYMBOL PIN NAME TQFP PIN NO.

A0 - A17

ADV

ADSP

ADSC

CLK

CS1

CS2

WEx

(x=a,b)

LBO

Address Inputs

Burst Address Advance

Address Status Processor

Address Status Controller

Clock

Chip Select

Byte Write Inputs

Output Enable

Global Write Enable

Byte Write Enable

Power Down Input

Burst Mode Control

32,33,34,35,36,37,

44,45,46,47,48,49,

50,80,81,82,99,100

93,94

VDD

VSS

N.C.

DQa0~a7

DQb0~b7

DQPa, Pb

VDDQ

VSSQ

Power Supply(+3.3V)

Ground

No Connect

Data Inputs/Outputs

Output Power Supply

(2.5V or 3.3V)

Output Ground

15,41,65,91

17,40,67,90

1,2,3,6,7,14,16,25,28,29,

30,38,39,42,43,51,52,53,

56,57,66,75,78,79,95,96

58,59,62,63,68,69,72,73

8,9,12,13,18,19,22,23

74,24

4,11,20,27,54,61,70,77

5,10,21,26,55,60,71,76

100 Pin TQFP

(20mm x 14mm)

K7A401800B(256Kx18)

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 7 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

FUNCTION DESCRIPTION

The K7A4036/3200B and K7A401800B are synchronous SRAM designed to support the burst address accessing sequence of the

P6 and Power PC based microprocessor. All inputs (with the exception of OE, LBO and ZZ) are sampled on rising clock edges. The

start and duration of the burst access is controlled by ADSC, ADSP and ADV and chip select pins.

The accesses are enabled with the chip select signals and output enabled signals. Wait states are inserted into the access with ADV.

When ZZ is pulled high, the SRAM will enter a Power Down State. At this time, internal state of the SRAM is preserved. When ZZ

returns to low, the SRAM normally operates after 2cycles of wake up time. ZZ pin is pulled down internally.

Read cycles are initiated with ADSP(regardless of WEx and ADSC)using the new external address clocked into the on-chip address

register whenever ADSP is sampled low, the chip selects are sampled active, and the output buffer is enabled with OE. In read oper-

ation the data of cell array accessed by the current address, registered in the Data-out registers by the positive edge of CLK, are car-

ried to the Data-out buffer by the next positive edge of CLK. The data, registered in the Data-out buffer, are projected to the output

pins. ADV is ignored on the clock edge that samples ADSP asserted, but is sampled on the subsequent clock edges. The address

increases internally for the next access of the burst when WEx are sampled High and ADV is sampled low. And ADSP is blocked to

control signals by disabling CS1.

All byte write is done by GW(regaedless of BW and WEx.), and each byte write is performed by the combination of BW and WEx

when GW is high.

Write cycles are performed by disabling the output buffers with OE and asserting WEx. WEx are ignored on the clock edge that sam-

ples ADSP low, but are sampled on the subsequent clock edges. The output buffers are disabled when WEx are sampled

Low(regardless of OE). Data is clocked into the data input register when WEx sampled Low. The address increases internally to the

next address of burst, if both WEx and ADV are sampled Low. Individual byte write cycles are performed by any one or more byte

write enable signals(WEa, WEb, WEc or WEd) sampled low. The WEa control DQa0 ~ DQa7 and DQPa, WEb controls DQb0 ~ DQb7

and DQPb, WEc controls DQc0 ~ DQc7 and DQPc, and WEd control DQd0 ~ DQd7 and DQPd. Read or write cycle may also be initi-

ated with ADSC, instead of ADSP. The differences between cycles initiated with ADSC and ADSP as are follows;

ADSP must be sampled high when ADSC is sampled low to initiate a cycle with ADSC.

WEx are sampled on the same clock edge that sampled ADSC low(and ADSP high).

Addresses are generated for the burst access as shown below, The starting point of the burst sequence is provided by the external

address. The burst address counter wraps around to its initial state upon completion. The burst sequence is determined by the state

of the LBO pin. When this pin is Low, linear burst sequence is selected. When this pin is High, Interleaved burst sequence is

selected.

BURST SEQUENCE TABLE (Interleaved Burst)

Note: 1. LBO pin must be tied to High or Low, and Floating State must not be allowed.

LBO PIN HIGH Case 1 Case 2 Case 3 Case 4

A1A0A1A0A1A0A1A0

First Address

Fourth Address

BQ TABLE (Linear Burst)

Note : 1. LBO pin must be tied to High or Low, and Floating State must not be allowed.

LBO PIN LOW Case 1 Case 2 Case 3 Case 4

A1A0A1A0A1A0A1A0

First Address

Fourth Address

ASYNCHRONOUS TRUTH TABLE

(See Notes 1 and 2):

OPERATION ZZ OE I/O STATUS

Sleep Mode H X High-Z

Read LL DQ

L H High-Z

Write L X Din, High-Z

Deselected L X High-Z

Notes

1. X means "Don′t Care".

2. ZZ pin is pulled down internally

3. For write cycles that following read cycles, the output buffers must be

disabled with OE, otherwise data bus contention will occur.

4. Sleep Mode means power down state of which stand-by current does

not depend on cycle time.

5. Deselected means power down state of which stand-by current

depends on cycle time.

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 8 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

SYNCHRONOUS TRUTH TABLE

Notes: 1. X means "Don′t Care". 2. The rising edge of clock is symbolized by ↑.

3. WRITE = L means Write operation in WRITE TRUTH TABLE.

WRITE = H means Read operation in WRITE TRUTH TABLE.

4. Operation finally depends on status of asynchronous input pins(ZZ and OE).

CS1CS2CS2ADSP ADSC ADV WRITE CLK ADDRESS ACCESSED OPERATION

HXXXLX X ↑N/A Not Selected

LLXLXXX ↑N/A Not Selected

LXHLXX X ↑N/A Not Selected

LLXXLXX ↑N/A Not Selected

LXHXLX X ↑N/A Not Selected

LHLLXX X ↑External Address Begin Burst Read Cycle

LHLHLX L ↑External Address Begin Burst Write Cycle

LHLHLX H ↑External Address Begin Burst Read Cycle

XXXHHL H ↑Next Address Continue Burst Read Cycle

HXXXHL H ↑Next Address Continue Burst Read Cycle

XXXHHL L ↑Next Address Continue Burst Write Cycle

HXXXHL L ↑Next Address Continue Burst Write Cycle

XXXHHH H ↑Current Address Suspend Burst Read Cycle

HXXXHH H ↑Current Address Suspend Burst Read Cycle

XXXHHH L ↑Current Address Suspend Burst Write Cycle

HXXXHH L ↑Current Address Suspend Burst Write Cycle

WRITE TRUTH TABLE(x36/32)

Notes: 1. X means "Don′t Care".

2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).

GW BW WEaWEbWEcWEdOPERATION

HHXXXX READ

HLHHHH READ

H L L H H H WRITE BYTE a

H L H L H H WRITE BYTE b

H L H H L L WRITE BYTE c and d

HLLLLL WRITE ALL BYTEs

L X X X X X WRITE ALL BYTEs

TRUTH TABLES

WRITE TRUTH TABLE(x18)

Notes: 1. X means "Don′t Care".

2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).

GW BW WEaWEbOPERATION

H H X X READ

H L H H READ

H L L H WRITE BYTE a

H L H L WRITE BYTE b

H L L L WRITE ALL BYTEs

L X X X WRITE ALL BYTEs

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 9 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

ABSOLUTE MAXIMUM RATINGS*

*Note: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

PARAMETER SYMBOL RATING UNIT

Voltage on VDD Supply Relative to VSS

Voltage on VDDQ Supply Relative to VSS

VDD -0.3 to 4.6 V

VDDQ VDD V

Voltage on Input Pin Relative to VSS VIN -0.3 to VDD+0.3 V

Voltage on I/O Pin Relative to VSS VIO -0.3 to VDDQ+0.3 V

Power Dissipation PD2.2 W

Storage Temperature TSTG -65 to 150 °C

Operating Temperature Commercial TOPR 0 to 70 °C

Industrial TOPR -40 to 85 °C

Storage Temperature Range Under Bias TBIAS -10 to 85 °C

CAPACITANCE*(TA=25°C, f=1MHz)

*Note : Sampled not 100% tested.

PARAMETER SYMBOL TEST CONDITION TYP MAX UNIT

Input Capacitance CIN VIN=0V - 4 pF

Output Capacitance COUT VOUT=0V - 6 pF

OPERATING CONDITIONS at 3.3V I/O (0°C≤ TA≤70°C)

* The above parameters are also guaranteed at industrial temperature range.

PARAMETER SYMBOL MIN Typ. MAX UNIT

Supply Voltage VDD 3.135 3.3 3.6 V

VDDQ 3.135 3.3 3.6 V

Ground VSS 00 0V

OPERATING CONDITIONS at 2.5V I/O(0°C ≤ TA ≤ 70°C)

* The above parameters are also guaranteed at industrial temperature range.

PARAMETER SYMBOL MIN Typ. MAX UNIT

Supply Voltage VDD 3.135 3.3 3.6 V

VDDQ 2.375 2.5 2.9 V

Ground VSS 000V

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

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K7A403200B

K7A403600B

DC ELECTRICAL CHARACTERISTICS(TA=0 to 70°C, VDD=3.3V+0.3V/-0.165V)

The above parameters are also guaranteed at industrial temperature range.

* VIL(Min)=-2.0(Pulse Width ≤ tCYC/2)

** VIH(Max)=4.6(Pulse Width ≤ tCYC/2)

** In Case of I/O Pins, the Max. VIH=VDDQ+0.3V

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT

Input Leakage Current(except ZZ) IIL VDD = Max; VIN=VSS to VDD -2 +2 µA

Output Leakage Current IOL Output Disabled, VOUT=VSS to VDDQ -2 +2 µA

Operating Current ICC

Device Selected, IOUT=0mA, ZZ≤VIL,

All Inputs=VIL or VIH, Cycle Time ≥cyc Min.

-16 - 290 mA

-14 - 250

Standby Current

ISB Device deselected, IOUT=0mA,ZZ≤VIL,

f=Max, All Inputs≤0.2V or ≥ VDD-0.2V

-16 - 140 mA

-14 - 130

ISB1 Device deselected, IOUT=0mA, ZZ≤0.2V,

f = 0, All Inputs=fixed (VDD-0.2V or 0.2V) -80mA

ISB2 Device deselected, IOUT=0mA, ZZ≥VDD-0.2V,

f=Max, All Inputs≤VIL or ≥VIH -50mA

Output Low Voltage(3.3V I/O) VOL IOL = 8.0mA - 0.4 V

Output High Voltage(3.3V I/O) VOH IOH = -4.0mA 2.4 - V

Output Low Voltage(2.5V I/O) VOL IOL = 1.0mA - 0.4 V

Output High Voltage(2.5V I/O) VOH IOH = -1.0mA 2.0 - V

Input Low Voltage(3.3V I/O) VIL -0.5* 0.8 V

Input High Voltage(3.3V I/O) VIH 2.0 VDD+0.3** V

Input Low Voltage(2.5V I/O) VIL -0.3* 0.7 V

Input High Voltage(2.5V I/O) VIH 1.7 VDD+0.3** V

TEST CONDITIONS

PARAMETER VALUE

Input Pulse Level(for 3.3V I/O) 0 to 3V

Input Pulse Level(for 2.5V I/O) 0 to 2.5V

Input Rise and Fall Time(Measured at 0.3V and 2.7V for 3.3V I/O) 1ns

Input Rise and Fall Time(Measured at 0.3V and 2.1V for 2.5V I/O) 1ns

Input and Output Timing Reference Levels for 3.3V I/O 1.5V

Input and Output Timing Reference Levels for 2.5V I/O VDDQ/2

Output Load See Fig. 1

=3.3V+0.3V/-0.165V,V

DDQ

=3.3V+0.3/-0.165V or V

=3.3V+0.3V/-0.165V,V

DDQ

=2.5V+0.4V/-0.125V, T

=0 to 70

* The above parameters are also guaranteed at industrial temperature range.

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 11 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

AC TIMING CHARACTERISTICS(TA=0 to 70°C, VDD=3.3V+0.3V/-0.165V)

Notes: 1. The above parameters are also guaranteed at industrial temperature range.

2. All address inputs must meet the specified setup and hold times for all rising clock edges whenever ADSC and/or ADSP

is sampled low and CS is sampled low. All other synchronous inputs must meet the specified setup and hold times

whenever this device is chip selected.

3. Both chip selects must be active whenever ADSC or ADSP is sampled low in order for the this device to remain enabled.

4. ADSC or ADSP must not be asserted for at least 2 Clock after leaving ZZ state.

PARAMETER Symbol -16 -14 Unit

Min. Max Min. Max

Cycle Time tCYC 6.0 - 7.2 - ns

Clock Access Time tCD - 3.5 - 4.0 ns

Output Enable to Data Valid tOE - 3.5 - 4.0 ns

Clock High to Output Low-Z tLZC 0 - 0 - ns

Output Hold from Clock High tOH 1.5 - 1.5 - ns

Output Enable Low to Output Low-Z tLZOE 0 - 0 - ns

Output Enable High to Output High-Z tHZOE - 3.5 - 4.0 ns

Clock High to Output High-Z tHZC 1.5 3.5 1.5 4.0 ns

Clock High Pulse Width tCH 2.4 - 2.8 - ns

Clock Low Pulse Width tCL 2.4 - 2.8 - ns

Address Setup to Clock High tAS 1.5 - 1.5 -ns

Address Status Setup to Clock High tSS 1.5 -1.5 -ns

Data Setup to Clock High tDS 1.5 -1.5 -ns

Write Setup to Clock High (GW, BW, WEX) tWS 1.5 -1.5 -ns

Address Advance Setup to Clock High tADVS 1.5 -1.5 -ns

Chip Select Setup to Clock High tCSS 1.5 -1.5 -ns

Address Hold from Clock High tAH 0.5 - 0.5 - ns

Address Status Hold from Clock High tSH 0.5 - 0.5 - ns

Data Hold from Clock High tDH 0.5 - 0.5 - ns

Write Hold from Clock High (GW, BW, WEX) tWH 0.5 - 0.5 - ns

Address Advance Hold from Clock High tADVH 0.5 - 0.5 - ns

Chip Select Hold from Clock High tCSH 0.5 - 0.5 - ns

ZZ High to Power Down tPDS 2 - 2 - cycle

ZZ Low to Power Up tPUS 2 - 2 - cycle

Output Load (B)

(for tLZC, tLZOE, tHZOE & tHZC)

Dout

5pF*

Fig. 1

* Including Scope and Jig Capacitance

Output Load(A)

Dout

Z0=50Ω

* Capacitive Load consists of all components of

30pF*

the test environment.

RL=50Ω

353Ω / 1538Ω

+3.3V for 3.3V I/O

319Ω / 1667Ω

VL=1.5V for 3.3V I/O

VDDQ/2 for 2.5V I/O

/+2.5V for 2.5V I/O

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 12 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

CLOCK

ADSP

ADSC

ADDRESS

WRITE

ADV

Data Out

TIMING WAVEFORM OF READ CYCLE

NOTES: WRITE = L means GW = L, or GW = H, BW = L, WEx = L

CS = L means CS1 = L, CS2 = H and CS2 = L

CS = H means CS1 = H, or CS1 = L and CS2 = H, or CS1 = L, and CS2 = L

tCH tCL

tSS tSH

tAS tAH

A1 A2 A3

BURST CONTINUED WITH

NEW BASE ADDRESS

tWS tWH

tCSS tCSH

tADVS tADVH

tOE tHZOE

tLZOE

tCD

tOH

(ADV INSERTS WAIT STATE)

tHZC

Q3-4Q3-3Q3-2Q3-1Q2-4Q2-3Q2-2Q2-1

Q1-1

Don′t Care

Undefined

tCYC

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 13 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

TIMING WAVEFORM OF WRTE CYCLE

CLOCK

ADSP

ADSC

ADDRESS

WRITE

ADV

Data In

tCH tCL

tSS tSH

tAS tAH

A1 A2 A3

(ADSC EXTENDED BURST)

D2-1D1-1

tCSS tCSH

(ADV SUSPENDS BURST)

D2-2 D2-3 D2-4 D3-1 D3-2 D3-3D2-2 D3-4

Q0-3 Q0-4

Data Out

tSS tSH

tWS tWH

tADVS tADVH

tDS tDH

tHZOE

Don′t Care

Undefined

tCYC

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 14 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

TIMING WAVEFORM OF COMBINATION READ/WRTE CYCLE(ADSP CONTROLLED, ADSC=HIGH)

CLOCK

ADSP

ADDRESS

WRITE

ADV

Data Out

tCH tCL

tDS tDH

Q3-2

Data In

tOH

A1 A2 A3

D2-1

Q3-1 Q3-3

tSS tSH

tAS tAH

tWS tWH

tADVS tADVH

tLZOE

tHZOE

tCD

tHZC

Q3-4

tLZC

Q1-1

Don′t Care

Undefined

tCYC

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 15 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

TIMING WAVEFORM OF SINGLE READ/WRITE CYCLE(ADSC CONTROLLED, ADSP=HIGH)

CLOCK

ADSC

ADDRESS

WRITE

ADV

Data In

tCH tCL

tHZOE

D6-1

Data Out

tWS tWH

tLZOE tOH

tOE

D5-1 D7-1

tWS tWH

tLZOE

tDHtDS

A1 A2 A3 A4 A5 A6 A7 A8 A9

Q3-1Q1-1 Q2-1 Q4-1 Q8-1

tCSS tCSH

tSS tSH

Q9-1

Don′t Care

Undefined

tCYC

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 16 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

TIMING WAVEFORM OF POWER DOWN CYCLE

CLOCK

ADSP

ADDRESS

WRITE

ADV

Data In

tCH tCL

D2-2

tHZOE

D2-1

tSS tSH

Data Out

tPUS

ADSC

tAS tAH

tCSS tCSH

Sleep State

Normal Operation Mode

ZZ Recovery Cycle

tWS tWH

tLZOE

Q1-1

tOE

tHZC

tPDS

ZZ Setup Cycle

Don′t Care

Undefined

tCYC

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 17 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

APPLICATION INFORMATION

The Samsung 128Kx36 Synchronous Pipelined Burst SRAM has two additional chip selects for simple depth expansion.

DEPTH EXPANSION

This permits easy secondary cache upgrades from 128K depth to 256K depth without extra logic.

Data

Address

CLK

ADS

64-Bits

CLK

ADSC

WEx

Address Data

ADV ADSP

128Kx36

SPB

SRAM

(Bank 0)

CLK

ADSC

WEx

Address Data

ADV ADSP

128Kx36

SPB

SRAM

(Bank 1)

CLK

Address

Cache

Controller

[0:17]

[17]

[0:16]

[17]

[0:16]

I/O

[0:71]

Microprocessor

Clock

ADSP

ADDRESS

Data Out

Bank 0 is selected by CS2, and Bank 1 deselected by CS2

Q1-1 Q1-2 Q1-4Q1-3

Data Out

tSS tSH

A1 A2

WRITE

CS1

An+1

ADV

(Bank 0)

(Bank 1) Q2-2 Q2-4Q2-3

tAS tAH

tWS tWH

tADVS tADVH

tOE

tLZOE

tHZC

Bank 0 is deselected by CS2, and Bank 1 selected by CS2

tCSS tCSH

tCD

tLZC

[0:n]

Q2-1

INTERLEAVE READ TIMING (Refer to non-interleave write timing for interleave write timing)

Don′t Care Undefined

*Notes: n = 14 32K depth

15 64K depth

16 128K depth

17 256K depth

(ADSP CONTROLLED, ADSC=HIGH)

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 18 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

APPLICATION INFORMATION

The Samsung 256Kx18 Synchronous Pipelinde Burst SRAM has two additional chip selects for simple depth expansion.

DEPTH EXPANSION

This permits easy secondary cache upgrades from 256K depth to 512K depth without extra logic.

Data

Address

CLK

ADS

Microprocessor

CLK

ADSC

WEx

Address Data

ADV ADSP

256Kx18

SPB

SRAM

(Bank 0)

CLK

ADSC

WEx

Address Data

ADV ADSP

256Kx18

SPB

SRAM

(Bank 1)

CLK

Address

Cache

Controller

[0:18]

[18]

[0:17]

[18]

[0:17]

I/O

[0:71]

Clock

ADSP

ADDRESS

Data Out

Bank 0 is selected by CS2, and Bank 1 deselected by CS2

Q1-1 Q1-2 Q1-4Q1-3

Data Out

tSS tSH

A1 A2

WRITE

CS1

An+1

ADV

(Bank 0)

(Bank 1) Q2-2 Q2-4Q2-3

tAS tAH

tWS tWH

tADVS tADVH

tOE

tLZOE

tHZC

Bank 0 is deselected by CS2, and Bank 1 selected by CS2

tCSS tCSH

tCD

tLZC

[0:n]

Q2-1

INTERLEAVE READ TIMING (Refer to non-interleave write timing for interleave write timing)

Don′t Care Undefined

*Notes: n = 14 32K depth, 15 64K depth, 16 128K depth, 17 256K depth

(ADSP CONTROLLED, ADSC=HIGH)

K7A401800B 128Kx36/x32 & 256Kx18 Synchronous SRAM

- 19 - Rev. 2.0 July 2006

K7A403200B

K7A403600B

0.10 MAX

0~8°

22.00 ±0.30

20.00 ±0.20

16.00 ±0.30

14.00 ±0.20

1.40 ±0.10 1.60 MAX

0.05 MIN

(0.58)

0.50 ±0.10

(0.83)

0.50 ±0.10

100-TQFP-1420A

0.65 0.30 ±0.10

0.10 MAX

+ 0.10

- 0.05

0.127

PACKAGE DIMENSIONS

Units ; millimeters/Inches