2SD313 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R203-001,E
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 3 A
Collector Dissipation PC 1.75 W
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS(TA=25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=1mA 60 V
Collector-Emitter Breakdown Voltage BVCEO I
C=10mA 60 V
Emitter-Base Breakdown Voltage BVEBO I
E=100uA 5 V
Collector Cut-Off Current ICBO V
CB=20V, IE=0 0.1 mA
Emitter Cut-Off Current IEBO V
EB=4V, IC=0 1.0 mA
Collector-Emitter Saturation Voltage VCE
SAT
I
C=2A, IB=0.2A 1.0 V
Base-Emitter On voltage VBE
ON
V
CE=2V, IC=1A 1.5 V
Gain Band width Product fT V
CE= 5V, IC= 0.5A 8 MHz
DC Current Gain hFE IC=1A, VCE=2V 40 320
IC=0.1A,VCE=2V 40
CLASSIFICATION ON hFE
RANK C D E F
RANGE 40-80 60-120 100-200 160-320