Preliminary Technical Information Trench Gate Power MOSFET IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T VDSS ID25 = = 250V 50A 50m RDS(on) N-Channel Enhancement Mode TO-247 (IXTH) TO-263 (IXTA) G S G (TAB) D TO-220 (IXTP) G (TAB) S Symbol Test Conditions VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 250 250 V V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, pulse width limited by TJM 50 130 A A IAS EAS TC = 25C TC = 25C 5 1.5 A J PD TC = 25C 400 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C Mounting Torque TO-220,TO-3P,TO247 1.13 / 10 Mounting Force TO-263 10..65 / 2.2..14.6 Nmlb.in. N/lb. Md FC 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Weight TO-263 TO-220 TO-3P TO-247 2.5 3.0 5.5 6.0 g g g g TO-3P (IXTQ) G Characteristic Values Min. Typ . Max. BVDSS VGS = 0V, ID = 1mA 250 VGS(th) VDS = VGS, ID = 1mA 3 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS z International standard packages Avalanche rated z Low package inductance - easy to drive and to protect z Advantages z RDS(on) TJ = 125C VGS = 10V, ID = 0.5 * ID25, Note 1 (c) 2007 IXYS CORPORATION, All rights reserved z z V z 100 nA z 1 D = Drain TAB = Drain Easy to mount Space savings High power density Applications V 5 (TAB) S Features z Symbol Test Conditions (TJ = 25C unless otherwise specified) D G = Gate S = Source z VGS = 0V (TAB) Maximum Ratings TJ TJM Tstg TL DS A 150 A 50 m z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Uninterruptible power supplies High speed power switching applications DS99346A(10/07) IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 10V, ID = 0.5 * ID25, Note 1 35 Ciss Coss 58 S 4000 pF 410 pF 60 pF 14 ns 25 ns 47 ns 25 ns 78 nC 19 nC 22 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 15V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 3.3 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 * VDSS , ID = 0.5 * ID25 Qgd RthJC RthCH 0.31 TO-220 TO-3P, TO-247 C/W C/W C/W 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25C unless otherwise specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 50 A Repetitive, pulse width limited by TJM 200 A IF = IS, VGS = 0V, Note 1 1.5 V 166 ns 23 A 1.9 C IF = 25A, -di/dt = 250A/s VR = 100V, VGS = 0V Notes: 1: Pulse test, t 300s; duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T TO-263 (IXTA) Outline TO-220 (IXTP) Outline Pins: 1 - Gate 3 - Source TO-247 (IXTH) Outline Dim. 1 2 P 3 e Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain (c) 2007 IXYS CORPORATION, All rights reserved Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline 2 - Drain 4 - Drain IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 50 160 VGS = 10V 8V 7V 45 40 VGS = 10V 8V 140 120 30 ID - Amperes ID - Amperes 35 6V 25 20 7V 100 80 60 6V 15 40 10 5V 5 20 0 0 5V 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 4 8 VDS - Volts 12 16 20 24 28 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 25A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 50 3.2 VGS = 10V 7V 45 VGS = 10V 2.8 RDS(on) - Normalized 40 ID - Amperes 35 6V 30 25 20 5V 15 2.4 I D = 50A 2 I D = 25A 1.6 1.2 10 0.8 5 0 0.4 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 5 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 25A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 55 4.0 50 VGS = 10V 3.5 45 TJ = 125C 40 3.0 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.5 2.0 1.5 TJ = 25C 35 30 25 20 15 10 1.0 5 0.5 0 0 20 40 60 80 100 120 140 ID - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T Fig. 7. Input Admittance Fig. 8. Transconductance 100 100 90 90 80 80 70 70 TJ = - 40C g f s - Siemens ID - Amperes 25C 60 50 TJ = 125C 25C - 40C 40 60 125C 50 40 30 30 20 20 10 10 0 0 3.6 4 4.4 4.8 5.2 5.6 6 6.4 0 10 20 30 VGS - Volts 40 50 60 70 80 90 100 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 180 160 140 9 VDS = 125V 8 I D = 25A I G = 10mA VGS - Volts IS - Amperes 7 120 100 80 60 TJ = 125C 6 5 4 3 TJ = 25C 40 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 VSD - Volts 20 30 40 50 60 70 80 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Ciss 1,000 Z(th)JC - C / W Capacitance - PicoFarads f = 1 MHz Coss 100 0.10 Crss 10 0 5 10 15 20 25 VDS - Volts (c) 2007 IXYS CORPORATION, All rights reserved 30 35 40 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA50N25T IXTH50N25T IXTP50N25T IXTQ50N25T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 26 26 RG = 3.3 24 23 I 22 I 21 D D TJ = 25C 25 VGS = 15V VDS = 125V t r - Nanoseconds t r - Nanoseconds 25 = 25A 24 RG = 3.3 23 VGS = 15V VDS = 125V 22 = 50A TJ = 125C 21 20 20 19 25 35 45 55 65 75 85 95 105 115 15 125 20 25 TJ - Degrees Centigrade Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 28 23 27 22 26 28 20 I D = 25A, 50A 19 24 18 22 17 - Nanoseconds 26 50 62 td(off) - - - - tf 60 RG = 3.3, VGS = 15V 58 25 56 24 54 I D = 25A 23 52 22 50 I D = 50A 21 48 20 16 18 15 20 46 14 19 44 13 18 16 14 2 4 6 8 10 12 14 16 18 20 25 35 45 RG - Ohms 66 58 54 TJ = 125C 22 50 TJ = 25C 18 46 42 TJ = 125C 16 38 15 20 25 30 35 95 105 115 42 125 40 45 220 50 ID - Amperes 200 TJ = 125C, VGS = 15V 80 180 VDS = 125V I D = 25A, 50A 70 160 60 140 50 120 40 100 30 80 20 60 10 t d ( o f f ) - Nanoseconds TJ = 25C t d ( o f f ) - Nanoseconds VDS = 125V 26 20 85 td(off) - - - - tf 90 62 RG = 3.3, VGS = 15V 24 75 100 td(off) - - - - t f - Nanoseconds 28 65 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 30 tf 55 TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Drain Current t f - Nanoseconds 45 VDS = 125V t f - Nanoseconds 21 d( on) VDS = 125V 30 40 t d ( o f f ) - Nanoseconds TJ = 125C, VGS = 15V 24 t t r - Nanoseconds td(on) - - - - tr 32 35 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature 36 34 30 ID - Amperes 40 2 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_50N25T(5G)7-20-07