IXTP50N25T - IXYS - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 250 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ250 V

VGSM Transient ± 30 V

ID25 TC= 25°C50A

IDM TC= 25°C, pulse width limited by TJM 130 A

IAS TC= 25°C 5 A

EAS TC= 25°C 1.5 J

PDTC= 25°C 400 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062in.) from case for 10s 300 °C

Plastic body for 10 seconds 260 °C

MdMounting Torque TO-220,TO-3P,TO247 1.13 / 10 Nmlb.in.

FCMounting Force TO-263 10..65 / 2.2..14.6 N/lb.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-3P 5.5 g

TO-247 6.0 g

G = Gate D = Drain

S = Source TAB = Drain

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ . Max.

BVDSS VGS = 0V, ID = 1mA 250 V

VGS(th) VDS = VGS, ID = 1mA 3 5 V

IGSS VGS = ± 20V, VDS = 0V ± 100 nA

IDSS VDS = VDSS 1 μA

VGS = 0V TJ = 125°C 150 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 50 mΩ

Trench Gate

Power MOSFET

N-Channel Enhancement Mode

Features

zInternational standard packages

z Avalanche rated

zLow package inductance

- easy to drive and to protect

Advantages

zEasy to mount

zSpace savings

zHigh power density

VDSS = 250V

ID25 = 50A

RDS(on) ≤≤

≤≤

≤ 50mΩΩ

ΩΩ

Ω

DS99346A(10/07)

IXTA50N25T IXTH50N25T

IXTP50N25T IXTQ50N25T

Applications

zDC-DC converters

zBattery chargers

zSwitched-mode and resonant-mode

power supplies

zDC choppers

zAC motor control

zUninterruptible power supplies

zHigh speed power switching

applications

TO-3P (IXTQ)

G

DS(TAB)

TO-263 (IXTA)

GS

(TAB) GDS(TAB)

TO-247 (IXTH)TO-220 (IXTP)

G(TAB)

DS

Preliminary Technical Information

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA50N25T IXTH50N25T

IXTP50N25T IXTQ50N25T

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

gfs VDS= 10V, ID = 0.5 • ID25, Note 1 35 58 S

Ciss 4000 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 410 pF

Crss 60 pF

td(on) 14 ns

tr 25 ns

td(off) 47 ns

tf 25 ns

Qg(on) 78 nC

Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25 19 nC

Qgd 22 nC

RthJC 0.31 °C/W

RthCH TO-220 0.50 °C/W

TO-3P, TO-247 0.25 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

ISVGS = 0V 50 A

ISM Repetitive, pulse width limited by TJM 200 A

VSD IF = IS, VGS = 0V, Note 1 1.5 V

trr 166 ns

IRM 23 A

QRM 1.9 μC

Notes: 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times

VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 3.3Ω (External)

IF = 25A, -di/dt = 250A/μs

VR = 100V, VGS = 0V

IXTA50N25T IXTH50N25T

IXTP50N25T IXTQ50N25T

TO-263 (IXTA) Outline

e

∅ P

TO-247 (IXTH) Outline

1 2 3

Terminals: 1 - Gate 2 - Drain

3 - Source Tab - Drain

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

TO-3P (IXTQ) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXTP) Outline

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA50N25T IXTH50N25T

IXTP50N25T IXTQ50N25T

Fig. 1. Ou tp u t C h aracter isti cs

@ 25ºC

0

5

10

15

20

25

30

35

40

45

50

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2

V

DS

- V olt s

I

D

- A mp ere s

V

GS

= 10V

8V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25º C

0

20

40

60

80

100

120

140

160

0 4 8 1216202428

V

DS

- Volts

I

D

- Am peres

V

GS

= 10V

8V

7V

5V

6V

Fig. 3. Output Characteristics

@ 125ºC

0

5

10

15

20

25

30

35

40

45

50

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V

DS

- Volts

I

D

- Am peres

V

GS

= 10V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 25A Value

vs. Junction Temperature

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- N ormalize d

V

GS

= 10V

I

D

= 50A

I

D

= 25A

Fig. 5. R

DS(on)

Normalized to I

D

= 25A Value

vs. Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0 20 40 60 80 100 120 140

I

D

- Amp e res

R

DS(on)

- N ormalize d

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Te mperatu r e

0

5

10

15

20

25

30

35

40

45

50

55

-50 -25 0 25 50 75 100 125 150

T

C

- Deg rees Cent i grade

I

D

- A m peres

IXTA50N25T IXTH50N25T

IXTP50N25T IXTQ50N25T

Fig. 7. Input Adm ittance

0

10

20

30

40

50

60

70

80

90

100

3.6 4 4.4 4.8 5.2 5.6 6 6.4

V

GS

- Volts

I

D

- Am peres

TJ

= 125ºC

25ºC

- 40ºC

Fig. 8. T ransconductance

0

10

20

30

40

50

60

70

80

90

100

0 102030405060708090100

I

D

- Amp eres

g

f s - Siem ens

TJ

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0

20

40

60

80

100

120

140

160

180

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

V

SD

- Vo lt s

I

S

- A m peres

TJ

= 125ºC TJ = 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 1020304050607080

Q

G

- NanoCoulombs

V

GS

- V o lts

VDS

= 125V

I D = 25A

I G = 10mA

Fig. 11. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoF arads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. Maximu m Tran si en t Th er mal

Impedance

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA50N25T IXTH50N25T

IXTP50N25T IXTQ50N25T

IXYS REF: T_50N25T(5G)7-20-07

Fi g . 14. R esi sti ve Tu r n -o n

Ri se Time vs. Drai n Cur rent

20

21

22

23

24

25

26

15 20 25 30 35 40 45 50

I

D

- A mp e r es

t

r

- Nanoseconds

R

G

= 3.3Ω

V

GS

= 15V

V

DS

= 125V

T

J

= 125ºC

T

J

= 25ºC

Fi g . 15. R esi stive Turn -o n

Switch i n g Ti mes vs. Gate R esi stan ce

14

16

18

20

22

24

26

28

30

32

34

36

2 4 6 8 10 12 14 16 18 20

R

G

- Ohms

t

r

- Nanoseconds

13

14

15

16

17

18

19

20

21

22

23

24

t

d ( o n )

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 15V

V

DS

= 125V

I

D

= 25A, 50A

Fi g . 16. R esistive Turn -o ff

Switch ing Times vs. Ju nctio n Temp er ature

18

19

20

21

22

23

24

25

26

27

28

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centi grad e

t

f

- Nanoseconds

42

44

46

48

50

52

54

56

58

60

62

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 3.3Ω, V

GS

= 15V

V

DS

= 125V

I

D

= 25A

I

D

= 50A

Fi g . 17. Resi sti ve Turn-off

Switch i n g Ti mes vs. D r ai n Cu r r en t

16

18

20

22

24

26

28

30

15 20 25 30 35 40 45 50

I

D

- A mp e r es

t

f

- Nanoseconds

38

42

46

50

54

58

62

66

t

d ( o f f )

- Na nose con ds

t

f

t

d(off)

- - - -

R

G

= 3.3Ω, V

GS

= 15V

V

DS

= 125V

T

J

= 125ºC

T

J

= 25ºC

T

J

= 25ºC

T

J

= 125ºC

Fi g . 1 3. R esi sti ve Turn-on

Ri se Ti me vs. Ju n ctio n Temp er ature

19

20

21

22

23

24

25

26

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centi grad e

t

r

- Nanoseconds

R

G

= 3.3Ω

V

GS

= 15V

V

DS

= 125V

I

D

= 50A

I

D

= 25A

Fi g . 18. R esis ti ve Tu r n -o ff

Switch ing Times vs. Gate R esi stance

10

20

30

40

50

60

70

80

90

100

2 4 6 8 10 12 14 16 18 20

R

G

- Ohm s

t

f

- Nanoseconds

40

60

80

100

120

140

160

180

200

220

t

d ( o f f )

- Nan ose cond s

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 15V

V

DS

= 125V I

D

= 25A, 50A