PD 9.1651B FB180SA10 HEXFET(R) Power MOSFET l l l l l l l l Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance D VDSS = 100V RDS(on) = 0.0065 G ID = 180A S Description Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial - industrial applications at power dissipation levels to approximately 500 watts. The low thermal resistance and easy connection to the SOT227 package contribute to its universal acceptance throughout the industry. S O T -22 7 Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG VISO Parameter Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, M4 srew 180 120 720 480 2.7 20 700 180 48 5.7 -55 to + 150 Units W W/C V mJ A mJ V/ns C 2.5 1.3 kV N*m A Thermal Resistance Parameter RJC RCS 1 Junction-to-Case Case-to-Sink, Flat, Greased Surface Typ. Max. Units --- 0.05 0.26 --- C/W www.irf.com 11/24/97 FB180SA10 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS Drain-to-Source Leakage Current Qg Qgs Qgd td(on) tr td(off) tf Ls Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. 100 --- --- 2.0 93 --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.093 --- V/C Reference to 25C, ID = 1mA --- 0.0065 VGS = 10V, ID = 180A --- 4.0 V VDS = VGS, ID = 250A --- --- S VDS = 25V, ID = 180A --- 50 VDS = 100V, VGS = 0V A --- 500 VDS = 80V, VGS = 0V, TJ = 125C --- 200 VGS = 20V nA --- -200 VGS = -20V 250 380 ID = 180A 40 60 nC VDS = 80V 110 165 VGS = 10.0V, See Fig. 6 and 13 45 --- VDD = 50V 351 --- ID = 180A ns 181 --- RG = 2.0 (Internal) 335 --- RD = 0.27, See Fig. 10 5.0 --- nH Between lead, and center of die contact --- 10700 --- VGS = 0V --- 2800 --- pF VDS = 25V --- 1300 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol --- --- 180 showing the A integral reverse --- --- 720 p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 180A, VGS = 0V --- 300 450 ns TJ = 25C, IF = 180A --- 2.6 3.9 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L =43H ISD 180A, di/dt 83A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. RG = 25, IAS = 180A. (See Figure 12) 2 www.irf.com FB180SA10 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 100 4.5V 10 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 4.5V 10 1 0.1 100 2.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 TJ = 150 C 100 TJ = 25 C 10 V DS = 25V 20s PULSE WIDTH 5 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 4 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 1 20s PULSE WIDTH TJ = 150 C 10 ID = 180A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 FB180SA10 VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 15000 Ciss 10000 Coss 5000 Crss 20 VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 20000 ID = 180 A VDS = 80V VDS = 50V VDS = 20V 15 10 5 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 1000 150 200 250 300 350 400 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C 100 1000 I D , Drain Current (A) ISD , Reverse Drain Current (A) 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 10us 100us 100 TJ = 25 C 1 1ms 10ms 10 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 50 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1.8 TC = 25 C TJ = 150 C Single Pulse 1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com FB180SA10 200 175 VGS D.U.T. RG 150 I D , Drain Current (A) RD VDS + -VDD 125 10V Pulse Width 1 s Duty Factor 0.1 % 100 75 Fig 10a. Switching Time Test Circuit 50 VDS 25 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.001 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 FB180SA10 1 5V EAS , Single Pulse Avalanche Energy (mJ) 1500 ID 71A 100A BOTTOM 160A TOP 1200 L VD S D .U .T RG IA S 20V D R IV E R + V - DD 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit A 900 600 300 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) V (B R )D S S tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 10 V QGS + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. QGD IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com FB180SA10 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 FB180SA10 SOT-227 Package Details 38.3 0 ( 1.5 08 ) 37.8 0 ( 1.4 88 ) 4 .40 (.1 73 ) 4 .20 (.1 65 ) C H AM FE R 2 .00 ( .0 79 ) X 4 5 7 LE A D A S S IG M E NT S E -A 4 C S 4 1 3 G E IG B T 25 .7 0 ( 1 .012 ) 25 .2 0 ( .9 92 ) 6 .25 ( .246 ) 12.5 0 ( .49 2 ) A1 -B 1 D R FU L L 7 .50 ( .295 ) 15.00 ( .590 ) 2 G S H E XFET K2 3 4 1 2 3 2 K1 A2 H E X FR E D 3 0.2 0 ( 1.18 9 ) 2 9.8 0 ( 1.17 3 ) 4X 2.1 0 ( .082 ) 1.9 0 ( .075 ) 8.10 ( .319 ) 7.70 ( .303 ) 0.25 ( .010 ) M C A M B M 2.10 ( .08 2 ) 1.90 ( .07 5 ) 12.30 ( .4 84 ) 11.80 ( .4 64 ) -C0.12 ( .005 ) Tube Q UANTITY PE R TUBE IS 1 0 M4 SR EW AND W ASHE R IN CLU DED WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/97 8 www.irf.com