Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 180
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 120 A
IDM Pulsed Drain Current 720
PD @TC = 25°C Power Dissipation 480 W
Linear Derating Factor 2.7 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy700 mJ
IAR Avalanche Current180 A
EAR Repetitive Avalanche Energy48 mJ
dv/dt Peak Diode Recovery dv/dt 5.7 V/ns
TJOperating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
VISO Insulation Withstand Voltage (AC-RMS) 2.5 k V
Mounting torque, M4 srew 1.3 N• m
FB180SA10
HEXFET® Power MOSFET
PD 9.1651B
S
D
G
VDSS = 100V
RDS(on) = 0.0065Ω
ID = 180A
Fifth Generation, high current density HEXFETS are
paralled into a compact, high power module providing
the best combination of switching, ruggedized design,
very low ON resistance and cost effectiveness.
The isolated SOT-227 package is preferred for all
commercial - industrial applications at power
dissipation levels to approximately 500 watts. The low
thermal resistance and easy connection to the SOT-
227 package contribute to its universal acceptance
throughout the industry.
11/24/97
Description
lFully Isolated Package
lEasy to Use and Parallel
l Very Low On-Resistance
lDynamic dv/dt Rating
lFully Avalanche Rated
lSimple Drive Requirements
lLow Drain to Case Capacitance
lLow Internal Inductance
SOT-227
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.26
RθCS Case-to-Sink, Flat, Greased Surface 0.05 ––– °C/W
Thermal Resistance
1www.irf.com
FB180SA10
2www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) ISD ≤ 180A, di/dt ≤83A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L =43µH
RG = 25Ω, IAS = 180A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 180A, VGS = 0V
trr Reverse Recovery Time ––– 300 450 ns TJ = 25°C, IF = 180A
Qrr Reverse Recovery Charge ––– 2.6 3.9 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Source-Drain Ratings and Characteristics
A
180
720
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.093 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.0065 ΩVGS = 10V, ID = 180A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 93 ––– ––– S VDS = 25V, ID = 180A
––– ––– 50 µA VDS = 100V, VGS = 0V
––– ––– 500 VDS = 80V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V
QgTotal Gate Charge ––– 250 380 ID = 180A
Qgs Gate-to-Source Charge ––– 40 60 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– 110 165 VGS = 10.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 45 ––– VDD = 50V
trRise Time ––– 351 ––– ID = 180A
td(off) Turn-Off Delay Time ––– 181 ––– RG = 2.0Ω (Internal)
tfFall Time ––– 335 ––– RD = 0.27Ω, See Fig. 10
LsInternal Source Inductance ––– 5.0 ––– nH Between lead,
and center of die contact
Ciss Input Capacitance ––– 10700 ––– VGS = 0V
Coss Output Capacitance ––– 2800 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 1300 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
ns
IDSS Drain-to-Source Leakage Current
FB180SA10
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
4 5 6 7 8 9 10
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
180A
FB180SA10
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 150 C
J°
T = 25 C
J°
1 10 100
0
5000
10000
15000
20000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
050 100 150 200 250 300 350 400
0
5
10
15
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
180 A
V = 20V
DS
V = 50V
DS
V = 80V
DS
1
10
100
1000
10000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
FB180SA10
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0
25
50
75
100
125
150
175
200
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
FB180SA10
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
300
600
900
1200
1500
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
71A
100A
160A
FB180SA10
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
FB180SA10
8www.irf.com
Tube
SOT-227 Package Details
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 11/97
4.40 (.1 73 )
4.20 (.1 65 )
12.50 ( .492 )
7.50 ( .295 )
2.1 0 ( .082 )
1.9 0 ( .075 )
30.20 ( 1.18 9 )
29.80 ( 1.17 3 )
8.10 ( .319 )
7.70 ( .303 )
4X
15.00 ( .590 )
R FULL
2.10 ( .08 2 )
1.90 ( .07 5 )
0.12 ( .005 )
-C-
0 .2 5 ( .01 0 ) M C A M B M
25.70 ( 1.012 )
25.20 ( .992 )
-B-
6.25 ( .246 )
CHA MFER
2.00 ( .0 79 ) X 45 7
-A-
38.30 ( 1.508 )
37.80 ( 1.488 )
12.30 ( .484 )
11.80 ( .464 )
4
1
3
2
LEAD ASSIG MENTS
IGBT
EC
G
E
SD
G
S
HEXFET
A1 K2
K1 A2
3
2
4
1
3
2
4
1
HEXFRED
QUANTITY PER TUBE I S 10
M4 SR EW AND WASH ER IN C LU DE D
