113
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator, Lighting Inverter and General Purpose
2SC4518/4518A
IC–VCE Characteristics
(Typical)
hFE–IC Temperature Characteristics (Typical)
ton•tstg•tf–IC Characteristics
(Typical)
θj-a–t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage VCE(sat)(V)
Base-Emitter Saturation Voltage VBE(sat)(V)
Pc–Ta Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.03
0.1
0.05
11050.5
0
1.5
1.0
0.5
Collector Current IC(A)
VBE(sat)
VCE(sat)
IC/IB=5 Const.
0.2 10.5 5
0.1
0.5
5
7
1
Switching Time ton•tstg•tf(µs)
Collector Current IC(A)
tstg
ton
tf
VCC 250V
IC:IB1:IB2=1:0.15:–0.5
35
30
20
10
2
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
50 500 1000100
1
5
0.5
0.1
0.03
0.05
20
10
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
2SC4518 2SC4518A
10 50 100 500 1000
1
0.5
0.03
0.05
0.1
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
100µs
0.02 0.10.05 1 50.5
5
10
50
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
125˚C
25˚C
–55˚C
0
5
1
2
3
4
0 1.20.4 0.6 0.8 1.00.2Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=4V)
0.3
1
4
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
0
0
2
1
5
3
4
2134
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
600mA
700mA
400mA
150mA
250mA
IB=50mA
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
250
RL
(Ω)
139
IC
(A)
1.8
VBB2
(V)
–5
IB2
(A)
–0.9
ton
(
µ
s)
0.7max
tstg
(
µ
s)
4max
tf
(
µ
s)
0.5max
IB1
(A)
0.27
VBB1
(V)
10
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4518 2SC4518A
900 1000
550
7
5(Pulse10)
2.5
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4518 2SC4518A
100max
100max
550min
10to25
0.5max
1.2max
6typ
50typ
Unit
µ
A
µ
A
V
V
V
MHz
pF
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=1.8A
IC=1.8A, IB=0.36A
IC=1.8A, IB=0.36A
VCE=12V, IE=–0.35A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0±0.2
16.9±0.3
13.0min
8.4±0.2
0.8±0.2
3.9
±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8 c0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
