DS-25DF041B–040E–2/2017
Features
Single 1.65V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3
Supports Dual-I/O Operation
104MHz Maximum Operating Frequency
Clock-to-Output (tV) of 6 ns
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Small (256-Byte) Page Erase
Uniform 4-Kbyte Block Erase
Uniform 32-Kbyte Block Erase
Uniform 64-Kbyte Block Erase
Full Chip Erase
Hardware Controlled Locking of Protected Sectors via WP Pin
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Dual-Input Byte/Page Program (1 to 256 Bytes)
Sequential Program Mode Capability
Fast Program and Erase Times
1.25ms Typical Page Program (256 Bytes) Time
35ms Typical 4-Kbyte Block Erase Time
250ms Typical 32-Kbyte Block Erase Time
450ms Typical 64-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
200nA Ultra Deep Power Down current (Typical)
5µA Deep Power-Down Current (Typical)
25uA Standby current (Typical)
4.5mA Active Read Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil)
8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)
8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
8-lead TSSOP Package
8-ball WLCSP (3 x 2 x 3 ball matrix)
AT25DF041B
4-Mbit, 1.65V Minimum
SPI Serial Flash Memory with Dual-I/O Support
2
AT25DF041B
DS-25DF041B–040E–2/2017
1. Description
The Adesto® AT25DF041B is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer
based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The
flexible erase architecture of the AT25DF041B, with its page erase granularity it is ideal for data storage as well, eliminating the
need for additional data storage devices.
The erase block sizes of the AT25DF041B have been optimized to meet the needs of today's code and data storage applications.
By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules
and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that
occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space
efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device
density.
The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such as
unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc.
Specifically designed for use in many different systems, the AT25DF041B supports read, program, and erase operations with a
wide supply voltage range of 1.65V to 3.6V. No separate voltage is required for programming and erasing.
2. Pin Descriptions and Pinouts
Table 2-1. Pin Descriptions
Symbol Name and Function
Asserted
State Type
CS
CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the
device will be deselected and normally be placed in standby mode (not Deep Power-Down
mode), and the SO pin will be in a high-impedance state. When the device is deselected, data
will not be accepted on the SI pin.
A high-to-low transition on the CS pin is required to start an operation, and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation such
as a program or erase cycle, the device will not enter the standby mode until the completion of
the operation.
Low Input
SCK
SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the flow
of data to and from the device. Command, address, and input data present on the SI pin is
always latched in on the rising edge of SCK, while output data on the SO pin is always clocked
out on the falling edge of SCK.
-Input
SI (I/O0)
SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data
input including command and address sequences. Data on the SI pin is always latched in on the
rising edge of SCK.
With the Dual-Output Read commands, the SI Pin becomes an output pin (I/O0) in conjunction
with other pins to allow two bits of data on (I/O1-0) to be clocked out on every falling edge of SCK.
To maintain consistency with the SPI nomenclature, the SI (I/O0) pin will be referenced as the SI
pin unless specifically addressing the Dual-I/O modes in which case it will be referenced as I/O0.
Data present on the SI pin will be ignored whenever the device is deselected (CS is deasserted).
-Input/
Output
3
AT25DF041B
DS-25DF041B–040E–2/2017
SO (I/O1)
SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin is
always clocked out on the falling edge of SCK.
With the Dual-Output Read commands, the SO Pin remains an output pin (I/O1) in conjunction
with other pins to allow two bits of data on (I/O1-0) to be clocked out on every falling edge of SCK.
To maintain consistency with the SPI nomenclature, the SO (I/O1) pin will be referenced as the
SO pin unless specifically addressing the Dual-I/O modes in which case it ise referenced as I/O1.
The SO pin will be in a high-impedance state whenever the device is deselected (CS is
deasserted).
-Input/
Output
WP
WRITE PROTECT: The WP pin controls the hardware locking feature of the device. Please refer
to “Protection Commands and Features” on page 17 for more details on protection features and
the WP pin.
The WP pin is internally pulled-high and may be left floating if hardware controlled protection will
not be used. However, it is recommended that the WP pin also be externally connected to VCC
whenever possible.
Low Input
HOLD
HOLD: The HOLD pin is used to temporarily pause serial communication without deselecting or
resetting the device. While the HOLD pin is asserted, transitions on the SCK pin and data on the
SI pin will be ignored, and the SO pin will be in a high-impedance state.
The CS pin must be asserted, and the SCK pin must be in the low state in order for a Hold
condition to start. A Hold condition pauses serial communication only and does not have an
effect on internally self-timed operations such as a program or erase cycle. Please refer to
“Hold” on page 35 for additional details on the Hold operation.The HOLD pin is internally
pulled-high and may be left floating if the Hold function will not be used. However, it is
recommended that the HOLD pin also be externally connected to VCC whenever possible.
Low Input
VCC
DEVICE POWER SUPPLY: The VCC pin is used to supply the source voltage to the device.
Operations at invalid VCC voltages may produce spurious results and should not be attempted. -Power
GND GROUND: The ground reference for the power supply. GND should be connected to the system
ground. -Power
Table 2-1. Pin Descriptions (Continued)
Symbol Name and Function
Asserted
State Type
Table 2-2. Pinouts
Figure 2-1. 8-SOIC Top View
Figure 2-2. 8-TSSOP Top View
Figure 2-3. 8-UDFN (Top View)
Figure 2-4. 8-ball WLCSP (Bottom View)
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
1
2
3
4
8
7
6
5
CS
SO
WP
GND
VCC
HOLD
SCK
SI
CS
SO
WP
GND
1
2
3
4
8
7
6
5
VCC
HOLD
SCK
SI
SO HOLD
WP SCK
CS Vcc
SI
GND
4
AT25DF041B
DS-25DF041B–040E–2/2017
3. Block Diagram
Figure 3-1. Block Diagram
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AT25DF041B
DS-25DF041B–040E–2/2017
4. Memory Array
To provide the greatest flexibility, the memory array of the AT25DF041B can be erased in three levels of granularity:
sectors, blocks and pages. There is also a full chip erase. The size of the erase blocks is optimized for both code and
data storage applications, allowing both code and data segments to reside in their own erase regions. The erase
operations can be performed at the chip, sector, block, or page level.
Program operations to the device can be done at the full page level or at the byte level (a variable number of bytes, from
1byte to 256 bytes per page). The Memory Architecture Diagram illustrates the breakdown of each erase level.
Figure 4-1. Memory Architecture Diagram
4KB 07FFFFh – 07F000h 256 Bytes 07FFFFh – 07FF00h
4KB 07EFFFh – 07E000h 256 Bytes 07FEFFh – 07FE00h
4KB 07DFFFh – 07D000h 256 Bytes 07FDFFh – 07FD00h
4KB 07CFFFh – 07C000h 256 Bytes 07FCFFh – 07FC00h
4KB 07BFFFh – 07B000h 256 Bytes 07FBFFh – 07FB00h
4KB 07AFFFh – 07A000h 256 Bytes 07FAFFh – 07FA00h
4KB 079FFFh – 079000h 256 Bytes 07F9FFh – 07F900h
4KB 078FFFh – 078000h 256 Bytes 07F8FFh – 07F800h
4KB 077FFFh – 077000h 256 Bytes 07F7FFh – 07F700h
4KB 076FFFh – 076000h 256 Bytes 07F6FFh – 07F600h
4KB 075FFFh – 075000h 256 Bytes 07F5FFh – 07F500h
4KB 074FFFh – 074000h 256 Bytes 07F4FFh – 07F400h
4KB 073FFFh – 073000h 256 Bytes 07F3FFh – 07F300h
4KB 072FFFh – 072000h 256 Bytes 07F2FFh – 07F200h
4KB 071FFFh – 071000h 256 Bytes 07F1FFh – 07F100h
4KB 070FFFh – 070000h 256 Bytes 07F0FFh – 07F000h
4KB 06FFFFh – 06F000h 256 Bytes 07EFFFh – 07EF00h
4KB 06EFFFh – 06E000h 256 Bytes 07EEFFh – 07EE00h
4KB 06DFFFh – 06D000h 256 Bytes 07EDFFh – 07ED00h
4KB 06CFFFh – 06C000h 256 Bytes 07ECFFh – 07EC00h
4KB 06BFFFh – 06B000h 256 Bytes 07EBFFh – 07EB00h
4KB 06AFFFh – 06A000h 256 Bytes 07EAFFh – 07EA00h
4KB 069FFFh – 069000h 256 Bytes 07E9FFh – 07E900h
4KB 068FFFh – 068000h 256 Bytes 07E8FFh – 07E800h
4KB 067FFFh – 067000h
4KB 066FFFh – 066000h
4KB 065FFFh – 065000h
4KB 064FFFh – 064000h 256 Bytes 0017FFh – 001700h
4KB 063FFFh – 063000h 256 Bytes 0016FFh – 001600h
4KB 062FFFh – 062000h 256 Bytes 0015FFh – 001500h
4KB 061FFFh – 061000h 256 Bytes 0014FFh – 001400h
4KB 060FFFh – 060000h 256 Bytes 0013FFh – 001300h
256 Bytes 0012FFh – 001200h
256 Bytes 0011FFh – 001100h
256 Bytes 0010FFh – 001000h
4KB 00FFFFh – 00F000h 256 Bytes 000FFFh – 000F00h
4KB 00EFFFh – 00E000h 256 Bytes 000EFFh – 000E00h
4KB 00DFFFh – 00D000h 256 Bytes 000DFFh – 000D00h
4KB 00CFFFh – 00C000h 256 Bytes 000CFFh – 000C00h
4KB 00BFFFh – 00B000h 256 Bytes 000BFFh – 000B00h
4KB 00AFFFh – 00A000h 256 Bytes 000AFFh – 000A00h
4KB 009FFFh – 009000h 256 Bytes 0009FFh – 000900h
4KB 008FFFh – 008000h 256 Bytes 0008FFh – 000800h
4KB 007FFFh – 007000h 256 Bytes 0007FFh – 000700h
4KB 006FFFh – 006000h 256 Bytes 0006FFh – 000600h
4KB 005FFFh – 005000h 256 Bytes 0005FFh – 000500h
4KB 004FFFh – 004000h 256 Bytes 0004FFh – 000400h
4KB 003FFFh – 003000h 256 Bytes 0003FFh – 000300h
4KB 002FFFh – 002000h 256 Bytes 0002FFh – 000200h
4KB 001FFFh – 001000h 256 Bytes 0001FFh – 000100h
4KB 000FFFh – 000000h 256 Bytes 0000FFh – 000000h
64KB
(Sector 0)
32KB
32KB
• • •
64KB
32KB
32KB
• • •
• • •
• • •
64KB
32KB
32KB
• • •
64KB
(Sector 6)
64KB
16KB
(Sector 10)
8KB
(Sector 9)
8KB
(Sector 8)
32KB
(Sector 7)
Internal Sectoring for 64K 32KB
Sector Protection Block Erase Block Erase
Function (D8h Command) (52h Command) (20h Command)
Block Erase Detail
Page AddressBlock Address
RangeRange
Page Erase Detail / Page Program Detail
(81h Command) / (02h Command)
Block Erase
4KB 256 Byte Page 1-256 Byte Page
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AT25DF041B
DS-25DF041B–040E–2/2017
5. Device Operation
The AT25DF041B is controlled by a set of instructions that are sent from a host controller, commonly referred to as the
SPI Master. The SPI Master communicates with the AT25DF041B via the SPI bus which is comprised of four signal lines:
Chip Select (CS), Serial Clock (SCK), Serial Input (SI), and Serial Output (SO).
The SPI protocol defines a total of four modes of operation (mode 0, 1, 2, or 3) with each mode differing in respect to the
SCK polarity and phase and how the polarity and phase control the flow of data on the SPI bus. The AT25DF041B
supports the two most common modes, SPI Modes 0 and 3. The only difference between SPI Modes 0 and 3 is the
polarity of the SCK signal when in the inactive state (when the SPI Master is in standby mode and not transferring any
data). With SPI Modes 0 and 3, data is always latched in on the rising edge of SCK and always output on the falling edge
of SCK.
Figure 5-1. SPI Mode 0 and 3
5.1 Dual Output Read
The AT25DF041B features a Dual-Output Read mode that allow two bits of data to be clocked out of the device every
clock cycle to improve throughput. To accomplish this, both the SI and SO pins are utilized as outputs for the transfer of
data bytes. With the Dual-Output Read Array command, the SI pin becomes an output along with the SO pin.
6. Commands and Addressing
A valid instruction or operation must always be started by first asserting the CS pin. After the CS pin has been asserted,
the host controller must then clock out a valid 8-bit opcode on the SPI bus. Following the opcode, instruction dependent
information such as address and data bytes would then be clocked out by the host controller. All opcode, address, and
data bytes are transferred with the most-significant bit (MSB) first. An operation is ended by deasserting the CS pin.
Opcodes not supported by the AT25DF041B will be ignored by the device and no operation will be started. The device
will continue to ignore any data presented on the SI pin until the start of the next operation (CS pin being deasserted and
then reasserted). In addition, if the CS pin is deasserted before complete opcode and address information is sent to the
device, then no operation will be performed and the device will simply return to the idle state and wait for the next
operation.
Addressing of the device requires a total of three bytes of information to be sent, representing address bits A23-A0.
Since the upper address limit of the AT25DF041B memory array is 07FFFFh, address bits A23-A19 are always ignored
by the device.
SCK
CS
SI
SO
MSB LSB
MSB LSB
7
AT25DF041B
DS-25DF041B–040E–2/2017
Table 6-1. Command Listing
Command Opcode
Clock
Frequency
Address
Bytes
Dummy
Bytes
Data
Bytes
Read Commands
Read Array
0Bh 0000 1011 Up to 104 MHz 3 1 1+
03h 0000 0011 Up to 33 MHz (1) 3 0 1+
Dual Output Read 3Bh 0011 1011 Up to 50 MHz 3 1 1+
Program and Erase Commands
Page Erase 81h 1000 0001 Up to 104 MHz 3 0 0
Block Erase (4 Kbytes) 20h 0010 0000 Up to 104 MHz 3 0 0
Block Erase (32 Kbytes) 52h 0101 0010 Up to 104 MHz 3 0 0
Block Erase (64 Kbytes) D8h 1101 1000 Up to 104 MHz 3 0 0
Chip Erase
60h 0110 0000 Up to 104 MHz 0 0 0
C7h 1100 0111 Up to 104 MHz 0 0 0
Byte/Page Program (1 to 256 Bytes) 02h 0000 0010 Up to 104 MHz 3 0 1+
Sequential Program Mode
ADh 1010 1101 Up to 104 MHz 3, 0 (2) 0 1
AFh 1010 1111 Up to 104 MHz 3, 0 (2) 0 1
Dual-Input Byte/Page Program (1 to 256 bytes) A2h 1010 0010 Up to 104 MHz 3 0 1+
Protection Commands
Write Enable 06h 0000 0110 Up to 104 MHz 0 0 0
Write Disable 04h 0000 0100 Up to 104 MHz 0 0 0
Protect Sector 36h 0011 0110 Up to 104 MHz 3 0 0
Unprotect Sector 39h 0011 1001 Up to 104 MHz 3 0 0
Read Sector Protection Registers 3Ch 0011 1100 Up to 104 MHz 3 0 1+
Security Commands
Program OTP Security Register 9Bh 1001 1011 Up to 104 MHz 3 0 1+
Read OTP Security Register 77h 0111 0111 Up to 104 MHz 3 2 1+
Status Register Commands
Read Status Register 05h 0000 0101 Up to 104 MHz 0 0 1+
Active Status Interrupt 25h 0010 0101 Up to 104 MHz 0 1 0
Write Status Register Byte 1 01h 0000 0001 Up to 104 MHz 0 0 1
Write Status Register Byte 2 31h 0011 0001 Up to 104 MHz 0 0 1
Miscellaneous Commands
Reset F0h 1111 0000 Up to 104 MHz 0 0 1(D0h)
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AT25DF041B
DS-25DF041B–040E–2/2017
7. Read Commands
7.1 Read Array
The Read Array command can be used to sequentially read a continuous stream of data from the device by simply
providing the clock signal once the initial starting address is specified. The device incorporates an internal address
counter that automatically increments every clock cycle.
Two opcodes (0Bh and 03h) can be used for the Read Array command. The use of each opcode depends on the
maximum clock frequency that will be used to read data from the device. The 0Bh opcode can be used at any clock
frequency up to the maximum specified by fCLK, and the 03h opcode can be used for lower frequency read operations up
to the maximum specified by fRDLF.
To perform the Read Array operation, the CS pin must first be asserted and the appropriate opcode (0Bh or 03h) must be
clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the
starting address location of the first byte to read within the memory array. Following the three address bytes, an
additional dummy byte needs to be clocked into the device if the 0Bh opcode is used for the Read Array operation.
After the three address bytes (and the dummy byte if using opcode 0Bh) have been clocked in, additional clock cycles
will result in data being output on the SO pin. The data is always output with the MSB of a byte first. When the last byte
(07FFFFh) of the memory array has been read, the device will continue reading back at the beginning of the array
(000000h). No delays will be incurred when wrapping around from the end of the array to the beginning of the array.
Deasserting the CS pin will terminate the read operation and put the SO pin into high-impedance state. The CS pin can
be deasserted at any time and does not require a full byte of data be read.
Figure 7-1. Read Array - 03h Opcode
Read Manufacturer and Device ID 9Fh 1001 1111 Up to 104 MHz 0 0 1 to 4
Deep Power-Down B9h 1011 1001 Up to 104 MHz 0 0 0
Resume from Deep Power-Down ABh 1010 1011 Up to 104 MHz 0 0 0
Ultra Deep Power-Down 79h 0111 1001 Up to 104 MHz 0 0 0
1. Varies by voltage range. See Table 13.4 “AC Characteristics - Maximum Clock Frequencies”
2. Three address bytes are required for the first operation to designate the address to start programming. Afterwards, the internal address counter automatically
increments, so subsequent Sequential Program Mode operations only require clocking in of the opcode and the data byte until the Sequential Program Mode has been
exited
Table 6-1. Command Listing
Command Opcode
Clock
Frequency
Address
Bytes
Dummy
Bytes
Data
Bytes
SCK
CS
SI
SO
MSB MSB
2310
00000011
675410119812 373833 36353431 3229 30 39 40
OPCODE
AAAA AAAA A
MSB MSB
DDDDDDDDDD
ADDRESS BITS A23-A0
DATA BYTE 1
HIGH-IMPEDANCE
9
AT25DF041B
DS-25DF041B–040E–2/2017
Figure 7-2. Read Array - 0Bh Opcode
7.2 Dual-Output Read Array
The Dual-Output Read Array command is similar to the standard Read Array command and can be used to sequentially
read a continuous stream of data from the device by simply providing the clock signal once the initial starting address has
been specified. Unlike the standard Read Array command, however, the Dual-Output Read Array command allows two
bits of data to be clocked out of the device on every clock cycle, rather than just one.
The Dual-Output Read Array command can be used at any clock frequency, up to the maximum specified by fRDDO. To
perform the Dual-Output Read Array operation, the CS pin must first be asserted and then the opcode 3Bh must be
clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in to specify the
location of the first byte to read within the memory array. Following the three address bytes, a single dummy byte must
also be clocked into the device.
After the three address bytes and the dummy byte have been clocked in, additional clock cycles will result in data being
output on both the SO and SI pins. The data is always output with the MSB of a byte first and the MSB is always output
on the SO pin. During the first clock cycle, bit seven of the first data byte is output on the SO pin, while bit six of the same
data byte is output on the SIO pin. During the next clock cycle, bits five and four of the first data byte are output on the SO
and SIO pins, respectively. The sequence continues with each byte of data being output after every four clock cycles.
When the last byte (07FFFFh) of the memory array has been read, the device will continue reading from the beginning of
the array (000000h). No delays will be incurred when wrapping around from the end of the array to the beginning of the
array.Deasserting the CS pin will terminate the read operation and put the SO and SI pins into a high-impedance state.
The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Figure 7-3. Dual-Output Read Array
K
S
I
O
MSB MSB
2310
00001011
675410119812 394243414037 3833 36353431 3229 30 44 47 484645
OPCODE
AAAA AAAA A
MSB
XXXXXXXX
MSB MSB
DDDDDDDDDD
ADDRESS BITS A23-A0 DON'T CARE
DATA BYTE 1
HIGH-IMPEDANCE
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AT25DF041B
DS-25DF041B–040E–2/2017
8. Program and Erase Commands
8.1 Byte/Page Program
The Byte/Page Program command allows anywhere from a single byte of data to 256 bytes of data to be programmed
into previously erased memory locations. An erased memory location is one that has all eight bits set to the logical “1”
state (a byte value of FFh). Before a Byte/Page Program command can be started, the Write Enable command must
have been previously issued to the device (see “Write Enable” on page 17) to set the Write Enable Latch (WEL) bit of the
Status Register to a logical “1” state.
To perform a Byte/Page Program command, an opcode of 02h must be clocked into the device followed by the three
address bytes denoting the first byte location of the memory array to begin programming at. After the address bytes have
been clocked in, data can then be clocked into the device and will be stored in an internal buffer.
If the starting memory address denoted by A23-A0 does not fall on an even 256-byte page boundary (A7-A0 are not all
0), then special circumstances regarding which memory locations to be programmed will apply. In this situation, any data
that is sent to the device that goes beyond the end of the page will wrap around back to the beginning of the same page.
For example, if the starting address denoted by A23-A0 is 0000FEh, and three bytes of data are sent to the device, then
the first two bytes of data will be programmed at addresses 0000FEh and 0000FFh while the last byte of data will be
programmed at address 000000h. The remaining bytes in the page (addresses 000001h through 0000FDh) will not be
programmed and will remain in the erased state (FFh). In addition, if more than 256 bytes of data are sent to the device,
then only the last 256 bytes sent will be latched into the internal buffer.
When the CS pin is deasserted, the device will take the data stored in the internal buffer and program it into the
appropriate memory array locations based on the starting address specified by A23-A0 and the number of data bytes
sent to the device. If less than 256 bytes of data were sent to the device, then the remaining bytes within the page will not
be programmed and will remain in the erased state (FFh). The programming of the data bytes is internally self-timed and
should take place in a time of tPP or tBP if only programming a single byte.
The three address bytes and at least one complete byte of data must be clocked into the device before the CS pin is
deasserted, and the CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device
will abort the operation and no data will be programmed into the memory array. In addition, if the memory is in the
protected state (see “Protect Sector” on page 19), then the Byte/Page Program command will not be executed, and the
device will return to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be reset
back to the logical “0” state if the program cycle aborts due to an incomplete address being sent, an incomplete byte of
data being sent, the CS pin being deasserted on uneven byte boundaries, or because the memory location to be
programmed is protected.
While the device is programming, the Status Register can be read and will indicate that the device is busy. For faster
throughput, it is recommended that the Status Register be polled rather than waiting the tBP or tPP time to determine if the
data bytes have finished programming. For fastest throughput and least power consumption, it is recommended that the
Active Status Interrupt command 25h be used. After the initial 16 clks, no more clocks are required. Once the BUSY
cycle is done, SO will be driven low immediately to signal the device has finished programming.At some point before the
program cycle completes, the WEL bit in the Status Register will be reset back to the logical “0” state.
The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program
properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register.
1 1
AT25DF041B
DS-25DF041B–040E–2/2017
Figure 8-1. Byte Program
Figure 8-2. Page Program
8.2 Dual-Input Byte/Page Program
The Dual-Input Byte/Page Program command is similar to the standard Byte/Page Program command and can be used
to program anywhere from a single byte of data up to 256 bytes of data into previously erased memory locations. Unlike
the standard Byte/Page Program command, however, the Dual-Input Byte/Page Program command allows two bits of
data to be clocked into the device on every clock cycle rather than just one.
Before the Dual-Input Byte/Page Program command can be started, the Write Enable command must have been
previously issued to the device (see “Write Enable” on page 17) to set the Write Enable Latch (WEL) bit of the Status
Register to a Logical 1 state. To perform a Dual-Input Byte/Page Program command, an A2h opcode must be clocked
into the device followed by the three address bytes denoting the first location of the memory array to begin programming
at. After the address bytes have been clocked in, data can then be clocked into the device two bits at a time on both the
SO and SI pins.
The data is always input with the MSB of a byte first, and the MSB is always input on the SO pin. During the first clock
cycle, bit seven of the first data byte is input on the SO pin while bit six of the same data byte is input on the SI pin. During
the next clock cycle, bits five and four of the first data byte are input on the SO and SI pins, respectively. The sequence
continues with each byte of data being input after every four clock cycles. Like the standard Byte/Page Program
command, all data clocked into the device are stored in an internal buffer.
If the starting memory address denoted by A23-A0 does not fall on an even 256-byte page boundary (A7-A0 are not all
0), then special circumstances regarding which memory locations are to be programmed will apply. In this situation, any
data that are sent to the device that go beyond the end of the page will wrap around to the beginning of the same page.
In addition, if more than 256 bytes of data is sent to the device, then only the last 256 bytes sent will be latched into the
internal buffer.
Example: If the starting address denoted by A23-A0 is 0000FEh and three bytes of data are sent to the device, then
the first two bytes of data will be programmed at addresses 0000FEh and 0000FFh, while the last byte of
SCK
CS
SI
SO
MSB MSB
2310
00000010
675410119812 3937 3833 36353431 3229 30
OPCODE
HIGH-IMPEDANCE
AAAA AAAA A
MSB
DDDDDDDD
ADDRESS BITS A23-A0 DATA IN
SCK
CS
SI
SO
MSB MSB
2310
00000010
6754983937 3833 36353431 3229 30
OPCODE
HIGH-IMPEDANCE
AA AAAA
MSB
DDDDDDDD
ADDRESS BITS A23-A0 DATA IN BYTE 1
MSB
DDDDDDDD
DATA IN BYTE n
1 2
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data will be programmed at address 000000h. The remaining bytes in the page (addresses 000001h
through 0000FDh) will not be programmed and will remain in the erased state (FFh).
When the CS pin is deasserted, the device will program the data stored in the internal buffer into the appropriate memory
array locations based on the starting address specified by A23-A0 and the number of data bytes sent to the device. If
fewer than 256 bytes of data is sent to the device, then the remaining bytes within the page will not be programmed and
will remain in the erased state (FFh). The programming of the data bytes is internally self-timed and should take place in
a time of tPP or tBP if only programming a page (tPP) or a single byte (tBP).
The three address bytes and at least one complete byte of data must be clocked into the device before the CS pin is
deasserted, and the CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device
will abort the operation and no data will be programmed into the memory array. In addition, if the address specified by
A23-A0 points to a memory location within a sector that is in the protected state (see “Protect Sector” on page 19), then
the Byte/Page Program command will not be executed and the device will return to the idle state once the CS pin has
been deasserted. The WEL bit in the Status Register will be reset back to the Logical 0 state if the program cycle aborts
due to an incomplete address being sent, an incomplete byte of data being sent, the CS pin being deasserted on uneven
byte boundaries, or because the memory location to be programmed is protected or locked down.
While the device is programming, the Status Register can be read and will indicate that the device is busy. For faster
throughput, it is recommended that the Status Register be polled rather than waiting the tBP or tPP time to determine if the
data bytes have finished programming. For fastest throughput and least power consumption, it is recommended that the
Active Status Interrupt command 25h be used. At some point before the program cycle completes, the WEL bit in the
Status Register will be reset back to the Logical 0 state.
The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program
properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register.
Figure 8-3. Dual-Input Byte Program
SCK
CS
SI (SIO)
SO (SOI)
MSB MSB
2310
10100010
675410119812 33353431 3229 30
Opcode
AAAA AAAAA
Address Bits A23-A0
MSB
D7
D6
D5
D4
D3
D2
D1
D0
Input
Data Byte
High-impedance
1 3
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Figure 8-4. Dual-Input Page Program
8.3 Sequential Program Mode
The Sequential Program Mode improves throughput over the Byte/Page Program command when the Byte/Page
Program command is used to program single bytes only into consecutive address locations. For example, some systems
may be designed to program only a single byte of information at a time and cannot utilize a buffered Page Program
operation due to design restrictions. In such a case, the system would normally have to perform multiple Byte Program
operations in order to program data into sequential memory locations. This approach can add considerable system
overhead and SPI bus traffic.
The Sequential Programming Mode helps reduce system overhead and bus traffic by incorporating an internal address
counter that keeps track of the byte location to program, thereby eliminating the need to supply an address sequence to
the device for every byte to program. When using the Sequential Program mode, all address locations to be programmed
must be in the erased state. Before the Sequential Program mode can first be entered, the Write Enable command must
have been previously issued to the device to set the WEL bit of the Status Register to a logical “1” state.
To start the Sequential Program Mode, the CS pin must first be asserted, and either an opcode of ADh or AFh must be
clocked into the device. For the first program cycle, three address bytes must be clocked in after the opcode to designate
the first byte location to program. After the address bytes have been clocked in, the byte of data to be programmed can
be sent to the device. Deasserting the CS pin will start the internally self-timed program operation, and the byte of data
will be programmed into the memory location specified by A23 - A0.
After the first byte has been successfully programmed, a second byte can be programmed by simply reasserting the CS
pin, clocking in the ADh or AFh opcode, and then clocking in the next byte of data. When the CS pin is deasserted, the
second byte of data will be programmed into the next sequential memory location. The process would be repeated for
any additional bytes. There is no need to reissue the Write Enable command once the Sequential Program Mode has
been entered.
When the last desired byte has been programmed into the memory array, the Sequential Program Mode operation can
be terminated by reasserting the CS pin and sending the Write Disable command to the device to reset the WEL bit in the
Status Register back to the logical “0” state.
If more than one byte of data is ever clocked in during each program cycle, then only the last byte of data sent on the SI
pin will be stored in the internal latches. The programming of each byte is internally self-timed and should take place in a
time of tBP. For each program cycle, a complete byte of data must be clocked into the device before the CS pin is
deasserted, and the CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device
will abort the operation, the byte of data will not be programmed into the memory array, and the WEL bit in the Status
Register will be reset back to the logical “0” state.
SCK
CS
SI (SIO)
SO (SOI)
MSB MSB
2310
10100010
675410119812 3937 3833 36353431 3229 30
Opcode
AAAA AAAAA
MSB MSB
D7
D6
D5
D4
D3
D2
D1
D0
D7
D6
D5
D4
D3
D2
D1
D0
Address Bits A23-A0
Input
Data Byte 1
MSB
D7
D6
D5
D4
D3
D2
D1
D0
Input
Data Byte n
Input
Data Byte 2
High-impedance
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If the address initially specified by A23 - A0 points to a memory location within a sector that is in the protected state, then
the Sequential Program Mode command will not be executed, and the device will return to the idle state once the CS pin
has been deasserted. The WEL bit in the Status Register will also be reset back to the logical “0” state.
There is no address wrapping when using the Sequential Program Mode. Therefore, when the last byte (07FFFFh) of the
memory array has been programmed, the device will automatically exit the Sequential Program mode and reset the WEL
bit in the Status Register back to the logical “0” state. In addition, the Sequential Program mode will not automatically skip
over protected sectors; therefore, once the highest unprotected memory location in a programming sequence has been
programmed, the device will automatically exit the Sequential Program mode and reset the WEL bit in the Status
Register. For example, if Sector 1 was protected and Sector 0 was currently being programmed, once the last byte of
Sector 0 was programmed, the Sequential Program mode would automatically end. To continue programming with
Sector 2, the Sequential Program mode would have to be restarted by supplying the ADh or AFh opcode, the three
address bytes, and the first byte of Sector 2 to program.
While the device is programming a byte, the Status Register can be read and will indicate that the device is busy. For
faster throughput, it is recommended that the Status Register be polled at the end of each program cycle rather than
waiting the tBP time to determine if the byte has finished programming before starting the next Sequential Program mode
cycle.
The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program
properly. If a programming error arises, it will be indicated by the EPE bit in the Status Register.
Figure 8-5. Sequential Program Mode – Status Register Polling
Figure 8-6. Sequential Program Mode – Waiting Maximum Byte Program Time
CS
SI
SO
Opcode
A
23-16
A
15-8
A
7-0
05hData
HIGH-IMPEDANCE
Opcode
Data 05h 04h
Opcode
Data 05h
STATUS REGISTER
DATA
STATUS REGISTER
DATA
STATUS REGISTER
DATA
Seqeuntial Program Mode
Command
First Address to Program
Status Register Read
Command
Write Disable
Command
Seqeuntial Program Mode
Command
Seqeuntial Program Mode
Command
Note: Each transition shown for SI represents one byte (8 bits)
CS
SI
SO
Opcode
A23-16 A15-8 A7-0 Data
HIGH-IMPEDANCE
Opcode
Data 04h
Opcode
Data
Seqeuntial Program Mode
Command
First Address to Program
Write Disable
Command
Seqeuntial Program Mode
Command
Seqeuntial Program Mode
Command
Note: Each transition shown for SI represents one byte (8 bits)
tBP tBP tBP
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8.4 Page Erase
Page Erase for 4Mbit, 2048 Pages [eleven (11) page address bits, PA<10:0>] of 256Bytes each.
The Page Erase command can be used to individually erase any page in the main memory array. The Main Memory
Byte/Page Program command can be utilized at a later time.
To perform a Page Erase with the standard page size (256 bytes), an opcode of 81h must be clocked into the device
followed by three address bytes comprised of:
Byte 0: 81h the page erase command code
Byte 1: XXXX X, PA10, PA9, PA8; which is five (5) dummy bits and three (3) page address bits
Byte 2: PA<7:0>; which is eight (8) page address bits
Byte 3: XXXX XXXX; which is eight (8) dummy bits
When a low-to-high transition occurs on the CS pin, the device will erase the selected page (the erased state is a Logic
1). The erase operation is internally self-timed and should take place in a maximum time of tPE. During this time, the
RDY/BUSY bit in the Status Register will indicate that the device is busy.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If
an erase error arises, it will be indicated by the EPE bit in the Status Register.
8.5 Block Erase
A block of 4, 32, or 64Kbytes can be erased (all bits set to the logical “1” state) in a single operation by using one of three
different opcodes for the Block Erase command. An opcode of 20h is used for a 4-Kbyte erase, an opcode of 52h for a
32-Kbyte erase, and an opcode of D8h is used for a 64-Kbyte erase. Before a Block Erase command can be started, the
Write Enable command must have been previously issued to the device to set the WEL bit of the Status Register to a
logical “1” state.
To perform a Block Erase, the CS pin must first be asserted and the appropriate opcode (20h, 52h, or D8h) must be
clocked into the device. After the opcode has been clocked in, the three address bytes specifying an address within the
4-, 32-, or 64-Kbyte block to be erased must be clocked in. Any additional data clocked into the device will be ignored.
When the CS pin is deasserted, the device will erase the appropriate block. The erasing of the block is internally self-
timed and should take place in a time of tBLKE.
Since the Block Erase command erases a region of bytes, the lower order address bits do not need to be decoded by the
device. Therefore, for a 4-Kbyte erase, address bits A11-A0 will be ignored by the device and their values can be either a
logical “1” or “0”. For a 32-Kbyte erase, address bits A14-A0 will be ignored by the device. For a 64-Kbyte erase, address
bits A15-A0 will be ignored by the device. Despite the lower order address bits not being decoded by the device, the
complete three address bytes must still be clocked into the device before the CS pin is deasserted, and the CS pin must
be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and no
erase operation will be performed.
If the memory is in the protected state, then the Block Erase command will not be executed, and the device will return to
the idle state once the CS pin has been deasserted.
The WEL bit in the Status Register will be reset back to the logical “0” state if the erase cycle aborts due to an incomplete
address being sent, the CS pin being deasserted on uneven byte boundaries, or because a memory location within the
region to be erased is protected.
While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device
is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tBLKE time to
determine if the device has finished erasing. At some point before the erase cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
For fastest throughput and least power consumption, it is recommended that the Active Status Interrupt command 25h be
used. After the initial 16 clks, no more clocks are required. Once the BUSY cycle is done, SO will be driven low
immediately to signal the device has finished erasing.
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The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If
an erase error occurs, it will be indicated by the EPE bit in the Status Register.
Figure 8-7. Block Erase
8.6 Chip Erase
The entire memory array can be erased in a single operation by using the Chip Erase command. Before a Chip Erase
command can be started, the Write Enable command must have been previously issued to the device to set the WEL bit
of the Status Register to a logical “1” state.
Two opcodes (60h and C7h) can be used for the Chip Erase command. There is no difference in device functionality
when utilizing the two opcodes, so they can be used interchangeably. To perform a Chip Erase, one of the two opcodes
must be clocked into the device. Since the entire memory array is to be erased, no address bytes need to be clocked into
the device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted, the device will erase
the entire memory array. The erasing of the device is internally self-timed and should take place in a time of tCHPE.
The complete opcode must be clocked into the device before the CS pin is deasserted, and the CS pin must be
deasserted on an even byte boundary (multiples of eight bits); otherwise, no erase will be performed. In addition, if any
sector in the memory array is in the protected state, then the Chip Erase command will not be executed, and the device
will return to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to
the logical “0” state if the CS pin is deasserted on uneven byte boundaries or if the memory is in the protected state.
While the device is executing a successful erase cycle, the Status Register can be read and will indicate that the device
is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tCHPE time to
determine if the device has finished erasing. At some point before the erase cycle completes, the WEL bit in the Status
Register will be reset back to the logical “0” state.
The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly. If
an erase error occurs, it will be indicated by the EPE bit in the Status Register.
Figure 8-8. Chip Erase
SCK
CS
SI
SO
MSB MSB
2310
CCCCCCCC
675410119812 3129 3027 2826
OPCODE
AAAA AAAA A A A A
ADDRESS BITS A23-A0
HIGH-IMPEDANCE
SCK
CS
SI
SO
MSB
2310
CCCCCCCC
6754
OPCODE
HIGH-IMPEDANCE
1 7
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9. Protection Commands and Features
9.1 Write Enable
The Write Enable command is used to set the Write Enable Latch (WEL) bit in the Status Register to a logical “1” state.
The WEL bit must be set before a Byte/Page Program, Erase, Program OTP Security Register, or Write Status Register
command can be executed. This makes the issuance of these commands a two step process, thereby reducing the
chances of a command being accidentally or erroneously executed. If the WEL bit in the Status Register is not set prior to
the issuance of one of these commands, then the command will not be executed.
To issue the Write Enable command, the CS pin must first be asserted and the opcode of 06h must be clocked into the
device. No address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored.
When the CS pin is deasserted, the WEL bit in the Status Register will be set to a logical “1”. The complete opcode must
be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte
boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of the WEL bit will not
change.
Figure 9-1. Write Enable
9.2 Write Disable
The Write Disable command is used to reset the Write Enable Latch (WEL) bit in the Status Register to the logical “0”
state. With the WEL bit reset, all Byte/Page Program, Erase, Program OTP Security Register, and Write Status Register
commands will not be executed. Other conditions can also cause the WEL bit to be reset; for more details, refer to the
WEL bit section of the Status Register description.
To issue the Write Disable command, the CS pin must first be asserted and the opcode of 04h must be clocked into the
device. No address bytes need to be clocked into the device, and any data clocked in after the opcode will be ignored.
When the CS pin is deasserted, the WEL bit in the Status Register will be reset to a logical “0”. The complete opcode
must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte
boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of the WEL bit will not
change.
SCK
CS
SI
SO
MSB
2310
00000110
6754
OPCODE
HIGH-IMPEDANCE
1 8
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Figure 9-2. Write Disable
9.3 Protect Sector
Every physical sector of the device has a corresponding single-bit Sector Protection Register that is used to control the
software protection of a sector. Upon device power-up or after a device reset, each Sector Protection Register will default
to the logical “1” state indicating that all sectors are protected and cannot be programmed or erased.
Issuing the Protect Sector command to a particular sector address will set the corresponding Sector Protection Register
to the logical “1” state. The following table outlines the two states of the Sector Protection Registers.
Before the Protect Sector command can be issued, the Write Enable command must have been previously issued to set
the WEL bit in the Status Register to a logical “1”. To issue the Protect Sector command, the CS pin must first be
asserted and the opcode of 36h must be clocked into the device followed by three address bytes designating any
address within the sector to be protected. Any additional data clocked into the device will be ignored. When the CS pin is
deasserted, the Sector Protection Register corresponding to the physical sector addressed by A23 - A0 will be set to the
logical “1” state, and the sector itself will then be protected from program and erase operations. In addition, the WEL bit
in the Status Register will be reset back to the logical “0” state.
The complete three address bytes must be clocked into the device before the CS pin is deasserted, and the CS pin must
be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation, the state
of the Sector Protection Register will be unchanged, and the WEL bit in the Status Register will be reset to a logical “0”.
As a safeguard against accidental or erroneous protecting or unprotecting of sectors, the Sector Protection Registers can
themselves be locked from updates by using the SPRL (Sector Protection Registers Locked) bit of the Status Register
(please refer to the Status Register description for more details). If the Sector Protection Registers are locked, then any
attempts to issue the Protect Sector command will be ignored, and the device will reset the WEL bit in the Status
Register back to a logical “0” and return to the idle state once the CS pin has been deasserted.
SCK
CS
SI
SO
MSB
2310
00000100
6754
OPCODE
HIGH-IMPEDANCE
Table 9-1. Sector Protection Register Values
Value Sector Protection Status
0Sector is unprotected and can be programmed and erased.
1Sector is protected and cannot be programmed or erased. This is the default state.
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Figure 9-3. Protect Sector
9.4 Unprotect Sector
Issuing the Unprotect Sector command to a particular sector address will reset the corresponding Sector Protection
Register to the logical “0” state (see Table 9-1 for Sector Protection Register values). Every physical sector of the device
has a corresponding single-bit Sector Protection Register that is used to control the software protection of a sector.
Before the Unprotect Sector command can be issued, the Write Enable command must have been previously issued to
set the WEL bit in the Status Register to a logical “1”. To issue the Unprotect Sector command, the CS pin must first be
asserted and the opcode of 39h must be clocked into the device. After the opcode has been clocked in, the three address
bytes designating any address within the sector to be unlocked must be clocked in. Any additional data clocked into the
device after the address bytes will be ignored. When the CS pin is deasserted, the Sector Protection Register
corresponding to the sector addressed by A23 - A0 will be reset to the logical “0” state, and the sector itself will be
unprotected. In addition, the WEL bit in the Status Register will be reset back to the logical “0” state.
The complete three address bytes must be clocked into the device before the CS pin is deasserted, and the CS pin must
be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation, the state
of the Sector Protection Register will be unchanged, and the WEL bit in the Status Register will be reset to a logical “0”.
As a safeguard against accidental or erroneous locking or unlocking of sectors, the Sector Protection Registers can
themselves be locked from updates by using the SPRL (Sector Protection Registers Locked) bit of the Status Register
(please refer to the Status Register description for more details). If the Sector Protection Registers are locked, then any
attempts to issue the Unprotect Sector command will be ignored, and the device will reset the WEL bit in the Status
Register back to a logical “0” and return to the idle state once the CS pin has been deasserted.
Figure 9-4. Unprotect Sector
9.5 Global Protect/Unprotect
The Global Protect and Global Unprotect features can work in conjunction with the Protect Sector and Unprotect Sector
functions. For example, a system can globally protect the entire memory array and then use the Unprotect Sector
command to individually unprotect certain sectors and individually reprotect them later by using the Protect Sector
command. Likewise, a system can globally unprotect the entire memory array and then individually protect certain
sectors as needed.
SCK
CS
SI
SO
MSB MSB
2310
00110110
675410119812 3129 3027 2826
OPCODE
AAAA AAAA A A A A
ADDRESS BITS A23-A0
HIGH-IMPEDANCE
SCK
CS
SI
SO
MSB MSB
2310
00111001
675410119812 3129 3027 2826
OPCODE
AAAA AAAA A A A A
ADDRESS BITS A23-A0
HIGH-IMPEDANCE
2 0
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Performing a Global Protect or Global Unprotect is accomplished by writing a certain combination of data to the Status
Register using the Write Status Register command (see “Write Status Register” section on page 31 for command
execution details). The Write Status Register command is also used to modify the SPRL (Sector Protection Registers
Locked) bit to control hardware and software locking.
To perform a Global Protect, the appropriate WP pin and SPRL conditions must be met, and the system must write a
logical “1” to bits 5, 4, 3, and 2 of the Status Register. Conversely, to perform a Global Unprotect, the same WP and
SPRL conditions must be met but the system must write a logical “0” to bits 5, 4, 3, and 2 of the Status Register. Table 9-
2 details the conditions necessary for a Global Protect or Global Unprotect to be performed.
Table 9-2. Valid SPRL and Global Protect/Unprotect Conditions
WP
State
Current
SPRL
Value
New
Write Status
Register Data
Protection Operation
New
SPRL
Value
Bit
7 6 5 4 3 2 1 0
0 0
0 x 0 0 0 0 x x
0 x 0 0 0 1 x x
?
0 x 1 1 1 0 x x
0 x 1 1 1 1 x x
1 x 0 0 0 0 x x
1 x 0 0 0 1 x x
?
1 x 1 1 1 0 x x
1 x 1 1 1 1 x x
Global Unprotect – all Sector Protection Registers reset to 0
No change to current protection.
No change to current protection.
No change to current protection.
Global Protect – all Sector Protection Registers set to 1
Global Unprotect – all Sector Protection Registers reset to 0
No change to current protection.
No change to current protection.
No change to current protection.
Global Protect – all Sector Protection Registers set to 1
0
0
0
0
0
1
1
1
1
1
0 1 x x x x x x x x
No change to the current protection level. All sectors currently protected will remain
protected and all sectors currently unprotected will remain unprotected.
The Sector Protection Registers are hard-locked and cannot be changed when the
WP pin is LOW and the current state of SPRL is 1. Therefore, a Global
Protect/Unprotect will not occur. In addition, the SPRL bit cannot be changed (the
WP pin must be HIGH in order to change SPRL back to a 0).
1 0
0 x 0 0 0 0 x x
0 x 0 0 0 1 x x
?
0 x 1 1 1 0 x x
0 x 1 1 1 1 x x
1 x 0 0 0 0 x x
1 x 0 0 0 1 x x
?
1 x 1 1 1 0 x x
1 x 1 1 1 1 x x
Global Unprotect – all Sector Protection Registers reset to 0
No change to current protection.
No change to current protection.
No change to current protection.
Global Protect – all Sector Protection Registers set to 1
Global Unprotect – all Sector Protection Registers reset to 0
No change to current protection.
No change to current protection.
No change to current protection.
Global Protect – all Sector Protection Registers set to 1
0
0
0
0
0
1
1
1
1
1
1 1
0 x 0 0 0 0 x x
0 x 0 0 0 1 x x
?
0 x 1 1 1 0 x x
0 x 1 1 1 1 x x
1 x 0 0 0 0 x x
1 x 0 0 0 1 x x
?
1 x 1 1 1 0 x x
1 x 1 1 1 1 x x
No change to the current protection level. All sectors currently protected
will remain protected, and all sectors currently unprotected will remain
unprotected.
The Sector Protection Registers are soft-locked and cannot be changed
when the current state of SPRL is 1. Therefore, a Global
Protect/Unprotect will not occur. However, the SPRL bit can be changed
back to a 0 from a 1 since the WP pin is HIGH. To perform a Global
Protect/Unprotect, the Write Status Register command must be issued
again after the SPRL bit has been changed from a 1 to a 0.
0
0
0
0
0
1
1
1
1
1
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Essentially, if the SPRL bit of the Status Register is in the logical “0” state (Sector Protection Registers are not locked),
then writing a 00h to the Status Register will perform a Global Unprotect without changing the state of the SPRL bit.
Similarly, writing a 7Fh to the Status Register will perform a Global Protect and keep the SPRL bit in the logical “0” state.
The SPRL bit can, of course, be changed to a logical “1” by writing an FFh if software-locking or hardware-locking is
desired along with the Global Protect.
If the desire is to only change the SPRL bit without performing a Global Protect or Global Unprotect, then the system can
simply write a 0Fh to the Status Register to change the SPRL bit from a logical “1” to a logical “0” provided the WP pin is
deasserted. Likewise, the system can write an F0h to change the SPRL bit from a logical “0” to a logical “1” without
affecting the current sector protection status (no changes will be made to the Sector Protection Registers).
When writing to the Status Register, bits 5, 4, 3, and 2 will not actually be modified but will be decoded by the device for
the purposes of the Global Protect and Global Unprotect functions. Only bit 7, the SPRL bit, will actually be modified.
Therefore, when reading the Status Register, bits 5, 4, 3, and 2 will not reflect the values written to them but will instead
indicate the status of the WP pin and the sector protection status. Please refer to the “Read Status Register” section and
Table 11-1 on page 25 for details on the Status Register format and what values can be read for bits 5, 4, 3, and 2.
9.6 Read Sector Protection Registers
The Sector Protection Registers can be read to determine the current software protection status of each sector. Reading
the Sector Protection Registers, however, will not determine the status of the WP pin.
To read the Sector Protection Register for a particular sector, the CS pin must first be asserted and the opcode of 3Ch
must be clocked in. Once the opcode has been clocked in, three address bytes designating any address within the sector
must be clocked in. After the last address byte has been clocked in, the device will begin outputting data on the SO pin
during every subsequent clock cycle. The data being output will be a repeating byte of either FFh or 00h to denote the
value of the appropriate Sector Protection Register.
Deasserting the CS pin will terminate the read operation and put the SO pin into a high-impedance state. The CS pin can
be deasserted at any time and does not require that a full byte of data be read.
In addition to reading the individual Sector Protection Registers, the Software Protection Status (SWP) bit in the Status
Register can be read to determine if all, some, or none of the sectors are software protected (refer to the “Status Register
Commands” on page 28 for more details).
Figure 9-5. Read Sector Protection Register
Table 9-3. Read Sector Protection Register – Output Data
Output Data Sector Protection Register Value
00h Sector Protection Register value is 0 (sector is unprotected).
FFh Sector Protection Register value is 1 (sector is protected).
SCK
CS
SI
SO
MSB MSB
2310
00111100
675410119812 373833 36353431 3229 30 39 40
OPCODE
AAAA AAAA A
MSB MSB
DDDDDDDDDD
ADDRESS BITS A23-A0
DATA BYTE
HIGH-IMPEDANCE
2 2
AT25DF041B
DS-25DF041B–040E–2/2017
9.7 Protected States and the Write Protect (WP) Pin
The WP pin is not linked to the memory array itself and has no direct effect on the protection status of the memory array.
Instead, the WP pin, in conjunction with the SPRL (Sector Protection Registers Locked) bit in the Status Register, is used
to control the hardware locking mechanism of the device. For hardware locking to be active, two conditions must be met
– the WP pin must be asserted and the SPRL bit must be in the logical “1” state.
When hardware locking is active, the Sector Protection Registers are locked and the SPRL bit itself is also locked.
Therefore, sectors that are protected will be locked in the protected state, and sectors that are unprotected will be locked
in the unprotected state. These states cannot be changed as long as hardware locking is active, so the Protect Sector,
Unprotect Sector, and Write Status Register commands will be ignored. In order to modify the protection status of a
sector, the WP pin must first be deasserted, and the SPRL bit in the Status Register must be reset back to the logical “0”
state using the Write Status Register command. When resetting the SPRL bit back to a logical “0”, it is not possible to
perform a Global Protect or Global Unprotect at the same time since the Sector Protection Registers remain soft-locked
until after the Write Status Register command has been executed.
If the WP pin is permanently connected to GND, then once the SPRL bit is set to a logical “1”, the only way to reset the bit
back to the logical “0” state is to power-cycle or reset the device. This allows a system to power-up with all sectors
software protected but not hardware locked. Therefore, sectors can be unprotected and protected as needed and then
hardware locked at a later time by simply setting the SPRL bit in the Status Register.
When the WP pin is deasserted, or if the WP pin is permanently connected to VCC, the SPRL bit in the Status Register
can still be set to a logical “1” to lock the Sector Protection Registers. This provides a software locking ability to prevent
erroneous Protect Sector or Unprotect Sector commands from being processed. When changing the SPRL bit to a
logical “1” from a logical “0”, it is also possible to perform a Global Protect or Global Unprotect at the same time by writing
the appropriate values into bits 5, 4, 3, and 2 of the Status Register.
Tables 9-4 and 9-5 detail the various protection and locking states of the device.
.
Table 9-4. Sector Protection Register States
WP
Sector Protection Register
n (1)
1. “n” represents a sector number
Sector
n(1)
X
(Don't Care)
0Unprotected
1Protected
Table 9-5. Hardware and Software Locking
WP SPRL Locking SPRL Change Allowed Sector Protection Registers
0 0 Can be modified from 0 to 1
Unlocked and modifiable using the Protect and
Unprotect Sector commands. Global Protect
and Unprotect can also be performed.
0 1 Hardware
Locked Locked
Locked in current state. Protect and Unprotect
Sector commands will be ignored. Global
Protect and Unprotect cannot be performed.
1 0 Can be modified from 0 to 1
Unlocked and modifiable using the Protect and
Unprotect Sector commands. Global Protect
and Unprotect can also be performed.
1 1 Software
Locked Can be modified from 1 to 0
Locked in current state. Protect and Unprotect
Sector commands will be ignored. Global
Protect and Unprotect cannot be performed.
2 3
AT25DF041B
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10. Security Commands
10.1 Program OTP Security Register
The device contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such
as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc. The OTP
Security Register is independent of the main Flash memory array and is comprised of a total of 128 bytes of memory
divided into two portions. The first 64 bytes (byte locations 0 through 63) of the OTP Security Register are allocated as a
one-time user-programmable space. Once these 64 bytes have been programmed, they cannot be erased or
reprogrammed. The remaining 64 bytes of the OTP Security Register (byte locations 64 through 127) are factory
programmed by Adesto and will contain a unique value for each device. The factory programmed data is fixed and
cannot be changed
.
The user-programmable portion of the OTP Security Register does not need to be erased before it is programmed. In
addition, the Program OTP Security Register command operates on the entire 64-byte user-programmable portion of the
OTP Security Register at one time. Once the user-programmable space has been programmed with any number of
bytes, the user-programmable space cannot be programmed again; therefore, it is not possible to only program the first
two bytes of the register and then program the remaining 62 bytes at a later time.
Before the Program OTP Security Register command can be issued, the Write Enable command must have been
previously issued to set the WEL bit in the Status Register to a logical “1”. To program the OTP Security Register, the CS
pin must first be asserted and an opcode of 9Bh must be clocked into the device followed by the three address bytes
denoting the first byte location of the OTP Security Register to begin programming at. Since the size of the user-
programmable portion of the OTP Security Register is 64 bytes, the upper order address bits do not need to be decoded
by the device. Therefore, address bits A23-A6 will be ignored by the device and their values can be either a logical “1” or
“0”. After the address bytes have been clocked in, data can then be clocked into the device and will be stored in the
internal buffer.
If the starting memory address denoted by A23-A0 does not start at the beginning of the OTP Security Register memory
space (A5-A0 are not all 0), then special circumstances regarding which OTP Security Register locations to be
programmed will apply. In this situation, any data that is sent to the device that goes beyond the end of the 64-byte user-
programmable space will wrap around back to the beginning of the OTP Security Register. For example, if the starting
address denoted by A23-A0 is 00003Eh, and three bytes of data are sent to the device, then the first two bytes of data
will be programmed at OTP Security Register addresses 00003Eh and 00003Fh while the last byte of data will be
programmed at address 000000h. The remaining bytes in the OTP Security Register (addresses 000001h through
00003Dh) will not be programmed and will remain in the erased state (FFh). In addition, if more than 64 bytes of data are
sent to the device, then only the last 64 bytes sent will be latched into the internal buffer.
When the CS pin is deasserted, the device will take the data stored in the internal buffer and program it into the
appropriate OTP Security Register locations based on the starting address specified by A23-A0 and the number of data
bytes sent to the device. If less than 64 bytes of data were sent to the device, then the remaining bytes within the OTP
Security Register will not be programmed and will remain in the erased state (FFh). The programming of the data bytes is
internally self-timed and should take place in a time of tOTPP.
Table 10-1. OTP Security Register
Security Register
Byte Number
0 1 . . . 62 63 64 65 . . . 126 127
One-Time User Programmable Factory Programmed by Adesto
2 4
AT25DF041B
DS-25DF041B–040E–2/2017
The three address bytes and at least one complete byte of data must be clocked into the device before the CS pin is
deasserted, and the CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the device
will abort the operation and the user-programmable portion of the OTP Security Register will not be programmed. The
WEL bit in the Status Register will be reset back to the logical “0” state if the OTP Security Register program cycle aborts
due to an incomplete address being sent, an incomplete byte of data being sent, the CS pin being deasserted on uneven
byte boundaries, or because the user-programmable portion of the OTP Security Register was previously programmed.
While the device is programming the OTP Security Register, the Status Register can be read and will indicate that the
device is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tOTPP
time to determine if the data bytes have finished programming. At some point before the OTP Security Register
programming completes, the WEL bit in the Status Register will be reset back to the logical “0” state.
If the device is powered-down during the OTP Security Register program cycle, then the contents of the 64-byte user
programmable portion of the OTP Security Register cannot be guaranteed and cannot be programmed again.
The Program OTP Security Register command utilizes the internal 256-buffer for processing. Therefore, the contents of
the buffer will be altered from its previous state when this command is issued.
Figure 10-1. Program OTP Security Register
10.2 Read OTP Security Register
The OTP Security Register can be sequentially read in a similar fashion to the Read Array operation up to the maximum
clock frequency specified by fCLK. To read the OTP Security Register, the CS pin must first be asserted and the opcode
of 77h must be clocked into the device. After the opcode has been clocked in, the three address bytes must be clocked in
to specify the starting address location of the first byte to read within the OTP Security Register. Following the three
address bytes, two dummy bytes must be clocked into the device before data can be output.
After the three address bytes and the dummy bytes have been clocked in, additional clock cycles will result in OTP
Security Register data being output on the SO pin. When the last byte (00007Fh) of the OTP Security Register has been
read, the device will continue reading back at the beginning of the register (000000h). No delays will be incurred when
wrapping around from the end of the register to the beginning of the register.
Deasserting the CS pin will terminate the read operation and put the SO pin into a high-impedance state. The CS pin can
be deasserted at any time and does not require that a full byte of data be read.
SCK
CS
SI
SO
MSB MSB
2310
10011011
6754983937 3833 36353431 3229 30
OPCODE
HIGH-IMPEDANCE
AA AAAA
MSB
DDDDDDDD
ADDRESS BITS A23-A0 DATA IN BYTE 1
MSB
DDDDDDDD
DATA IN BYTE n
2 5
AT25DF041B
DS-25DF041B–040E–2/2017
Figure 10-2. Read OTP Security Register
11. Status Register Commands
11.1 Read Status Register
The Status Register can be read to determine the device's ready/busy status, as well as the status of many other
functions such as Hardware Locking and Software Protection. The Status Register can be read at any time, including
during an internally self-timed program or erase operation.The Status Register consists of two bytes.
To read the Status Register, the CS pin must first be asserted and the opcode of 05h must be clocked into the device.
After the opcode has been clocked in, the device will begin outputting Status Register data on the SO pin during every
subsequent clock cycle. After the last bit (bit 0) of Status Register Byte 2 has been clocked out, the sequence will repeat
itself, starting again with bit 7 of Status Register Byte 1, as long as the CS pin remains asserted and the clock pin is being
pulsed. The data in the Status Register is constantly being updated, so each repeating sequence will output new data.
Deasserting the CS pin will terminate the Read Status Register operation and put the SO pin into a high-impedance
state. The CS pin can be deasserted at any time and does not require that a full byte of data be read.
K
S
SI
O
MSB MSB
2310
01110111
675410119812 3336353431 3229 30
OPCODE
AAAA AAAAAXXX
MSB MSB
DDDDDDDDDD
ADDRESS BITS A23-A0
MSB
XXXXXX
DON'T CARE
DATA BYTE 1
HIGH-IMPEDANCE
Table 11-1. Status Register Format
Bit (1) Name Type (2) Description
7SPRL Sector Protection Registers Locked R/W
0Sector Protection Registers are unlocked (default).
1Sector Protection Registers are locked.
6SPM Sequential Program Mode Status R
0Byte/Page Programming Mode (default).
1Sequential Programming Mode entered.
5EPE Erase/Program Error R
0Erase or program operation was successful.
1Erase or program error detected.
4WPP Write Protect (WP) Pin Status R
0WP is asserted.
1WP is deasserted.
2 6
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11.1.1 SPRL Bit
The SPRL bit is used to control whether the Sector Protection Registers can be modified or not. When the SPRL bit is in
the logical “1” state, all Sector Protection Registers are locked and cannot be modified with the Protect Sector and
Unprotect Sector commands (the device will ignore these commands). In addition, the Global Protect and Global
Unprotect features cannot be performed. Any sectors that are presently protected will remain protected, and any sectors
that are presently unprotected will remain unprotected.
When the SPRL bit is in the logical “0” state, all Sector Protection Registers are unlocked and can be modified (the
Protect Sector and Unprotect Sector commands, as well as the Global Protect and Global Unprotect features, will be
processed as normal). The SPRL bit defaults to the logical “0” state after a power-up or a device reset.
The SPRL bit can be modified freely whenever the WP pin is deasserted. However, if the WP pin is asserted, then the
SPRL bit may only be changed from a logical “0” (Sector Protection Registers are unlocked) to a logical “1” (Sector
Protection Registers are locked). In order to reset the SPRL bit back to a logical “0” using the Write Status Register
command, the WP pin will have to first be deasserted.The SPRL bit is the only bit of the Status Register that can be user
modified via the Write Status Register command.
11.1.2 SPM Bit
The SPM bit indicates whether the device is in the Byte/Page Program mode or the Sequential Program Mode. The
default state after power-up or device reset is the Byte/Page Program mode.
11.1.3 EPE Bit
The EPE bit indicates whether the last erase or program operation completed successfully or not. If at least one byte
during the erase or program operation did not erase or program properly, then the EPE bit will be set to the logical “1”
state. The EPE bit will not be set if an erase or program operation aborts for any reason such as an attempt to erase or
program a protected region or if the WEL bit is not set prior to an erase or program operation. The EPE bit will be updated
after every erase and program operation.
3:2 SWP Software Protection Status R
00 All sectors are software unprotected (all Sector
Protection Registers are 0).
01
Some sectors are software protected. Read individual
Sector Protection Registers to determine which
sectors are protected.
10 Reserved for future use.
11 All sectors are software protected (all Sector
Protection Registers are 1 – default).
1WEL Write Enable Latch Status R
0Device is not write enabled (default).
1Device is write enabled.
0RDY/BSY Ready/Busy Status R
0Device is ready.
1Device is busy with an internal operation.
1. Only bit 7 of the Status Register will be modified when using the Write Status Register command.
2. R/W = Readable and writable
R = Readable only
Table 11-1. Status Register Format
Bit (1) Name Type (2) Description
2 7
AT25DF041B
DS-25DF041B–040E–2/2017
11.1.4 WPP Bit
The WPP bit can be read to determine if the WP pin has been asserted or not.
11.1.5 SWP Bits
The SWP bits provide feedback on the software protection status for the device. There are three possible combinations
of the SWP bits that indicate whether none, some, or all of the sectors have been protected using the Protect Sector
command or the Global Protect feature. If the SWP bits indicate that some of the sectors have been protected, then the
individual Sector Protection Registers can be read with the Read Sector Protection Registers command to determine
which sectors are in fact protected.
11.1.6 WEL Bit
The WEL bit indicates the current status of the internal Write Enable Latch. When the WEL bit is in the logical “0” state,
the device will not accept any program, erase, Protect Sector, Unprotect Sector, or Write Status Register commands.
The WEL bit defaults to the logical “0” state after a device power-up or reset. In addition, the WEL bit will be reset to the
logical “0” state automatically under the following conditions:
Write Disable operation completes successfully
Write Status Register operation completes successfully or aborts
Protect Sector operation completes successfully or aborts
Unprotect Sector operation completes successfully or aborts
Byte/Page Program operation completes successfully or aborts
Sequential Program Mode reaches highest unprotected memory location
Sequential Program Mode reaches the end of the memory array
Sequential Program Mode aborts (1)
Block Erase operation completes successfully or aborts
Chip Erase operation completes successfully or aborts
Hold condition aborts
If the WEL bit is in the logical “1” state, it will not be reset to a logical “0” if an operation aborts due to an incomplete or
unrecognized opcode being clocked into the device before the CS pin is deasserted. In order for the WEL bit to be reset
when an operation aborts prematurely, the entire opcode for a program, erase, Protect Sector, Unprotect Sector, or Write
Status Register command must have been clocked into the device.
11.1.7 RDY/BSY Bit
The RDY/BSY bit is used to determine whether or not an internal operation, such as a program or erase, is in progress.
To poll the RDY/BSY bit to detect the completion of a program or erase cycle, new Status Register data must be
continually clocked out of the device until the state of the RDY/BSY bit changes from a logical “1” to a logical “0”.Note that
the RDY/BSY bit can be read either from Status Register Byte 1 or from Status Register Byte 2. See also the Active
Status Interrupt command. (11.2)
1. WEL bit will not be reset if Software Reset command is entered.
2 8
AT25DF041B
DS-25DF041B–040E–2/2017
Figure 11-1. Read Status Register
11.1.8 RSTE Bit
The RSTE bit is used to enable or disable the Reset command. When the RSTE bit is in the Logical 0 state (the default
state after power-up), the Reset command is disabled and any attempts to reset the device using the Reset command
will be ignored. When the RSTE bit is in the Logical 1 state, the Reset command is enabled.
The RSTE bit will retain its state as long as power is applied to the device. Once set to the Logical 1 state, the RSTE bit
will remain in that state until it is modified using the Write Status Register Byte 2 command or until the device has been
power cycled. The Reset command itself will not change the state of the RSTE bit.
Note: 1. Only bit 4 of Status Register Byte 2 will be modified when using the Write Status Register Byte 2 command
2. R/W = Readable and Writeable
R = Readable only.
11.2 Active Status Interrupt
To simplify the readout of the RDY/BSY bit, the Active Status Interrupt command (25h) may be used. It is then not
necessary to continuously read the status register, it is sufficient to monitor the value of the SO line. If the SO line is
connected to an interrupt line on the host controller, the host controller may be in sleep mode until the SO line indicates
that the AT25DF041B is ready for the next command.
The RDY/BSY bit can be read at any time, including during an internally self-timed program or erase operation.
SCK
CS
SI
SO
MSB
2310
00000101
675410119812 212217 20191815 1613 14 23 24
OPCODE
MSB MSB
DDDDDD DDDD
MSB
DDDDDDDD
STATUS REGISTER BYTE1 STATUS REGISTER BYTE2
HIGH-IMPEDANCE
Table 11-2. Status Register Format – Byte 2
Bit(1) Name Type(2) Description
7RES Reserved for future use R 0 Reserved for future use
6RES Reserved for future use R 0 Reserved for future use
5RES Reserved for future use R 0 Reserved for future use
4RSTE Reset Enabled R/W
0Reset command is disabled (default)
1Reset command is enabled
3RES Reserved for future use R 0 Reserved for future use
2RES Reserved for future use R 0 Reserved for future use
1RES Reserved for future use R 0 Reserved for future use
0RDY/BSY Ready/Busy Status R
0Device is ready
1Device is busy with an internal operation
2 9
AT25DF041B
DS-25DF041B–040E–2/2017
To enable the Active Status Interrupt command, the CS pin must first be asserted and the opcode of 25h must be
clocked into the device. For SPI Mode3, at least one dummy bit has to be clocked into the device after the last bit of the
opcode has been clocked in. (In most cases, this is most easily done by sending a dummy byte to the device.) The value
of the SI line after the opcode is clocked in is of no significance to the operation. For SPI Mode 0, this dummy bit (dummy
byte) is not required.
The value of RDY/BSY is then output on the SO line, and is continuously updated by the device for as long as the CS pin
remains asserted. Additional clocks on the SCK pin are not required. If the RDY/BSY bit changes from 1 to 0 while the
CS pin is asserted, the SO line will change from 1 to 0. (The RDY/BSY bit cannot change from 0 to 1 during an operation,
so if the SO line already is 0, it will not change.)
Deasserting the CS pin will terminate the Active Status Interrupt operation and put the SO pin into a high-impedance
state. The CS pin can be deasserted at any time and does not require that a full byte of data be read.
Figure 11-2. Active Status Interrupt
11.3 Write Status Register
The Write Status Register command is used to modify the SPRL bit of the Status Register and/or to perform a Global
Protect or Global Unprotect operation. Before the Write Status Register command can be issued, the Write Enable
command must have been previously issued to set the WEL bit in the Status Register to a logical “1”.
To issue the Write Status Register command, the CS pin must first be asserted and the opcode of 01h must be clocked
into the device followed by one byte of data. The one byte of data consists of the SPRL bit value, a don’t care bit, four
data bits to denote whether a Global Protect or Unprotect should be performed, and two additional don’t care bits (see
Table 11-3). Any additional data bytes that are sent to the device will be ignored. When the CS pin is deasserted, the
SPRL bit in the Status Register will be modified, and the WEL bit in the Status Register will be reset back to a logical “0”.
The values of bits 5, 4, 3, and 2 and the state of the SPRL bit before the Write Status Register command was executed
(the prior state of the SPRL bit) will determine whether or not a Global Protect or Global Unprotect will be perfomed.
Please refer to the “Global Protect/Unprotect” section on page 21 for more details.
The complete one byte of data must be clocked into the device before the CS pin is deasserted; otherwise, the device will
abort the operation, the state of the SPRL bit will not change, no potential Global Protect or Unprotect will be performed,
and the WEL bit in the Status Register will be reset back to the logical “0” state.
If the WP pin is asserted, then the SPRL bit can only be set to a logical “1”. If an attempt is made to reset the SPRL bit to
a logical “0” while the WP pin is asserted, then the Write Status Register command will be ignored, and the WEL bit in the
SCK
CS
SI
SO
MSB
2310
0000101
675410119812151314
HIGH-IMPEDANCE 5'<%6< HIGH-IMPEDANCE
23&2'(
3 0
AT25DF041B
DS-25DF041B–040E–2/2017
Status Register will be reset back to the logical “0” state. In order to reset the SPRL bit to a logical “0”, the WP pin must
be deasserted.
Figure 11-3. Write Status Register
11.4 Write Status Register Byte 2
The Write Status Register Byte 2 command is used to modify the RSTE. Using the Write Status Register Byte 2
command is the only way to modify the RSTE in the Status Register during normal device operation. Before the Write
Status Register Byte 2 command can be issued, the Write Enable command must have been previously issued to set the
WEL bit in the Status Register to a Logical 1.
To issue the Write Status Register Byte 2 command, the CS pin must first be asserted and then the opcode 31h must be
clocked into the device followed by one byte of data. The one byte of data consists of three don’t-care bits, the RSTE bit
value, and four additional don’t-care bits (see Table 11-4). Any additional data bytes sent to the device will be ignored.
When the CS pin is deasserted, the RSTE bit in the Status Register will be modified, and the WEL bit in the Status
Register will be reset back to a Logical 0.
The complete one byte of data must be clocked into the device before the CS pin is deasserted, and the CS pin must be
deasserted on even byte boundaries (multiples of eight bits); otherwise, the device will abort the operation, the state of
the RSTE bit will not change, and the WEL bit in the Status Register will be reset back to the Logical 0 state.
Table 11-3. Write Status Register Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
SPRL XGlobal Protect/Unprotect X X
SCK
CS
SI
SO
MSB
2310
0000000
675410119814151312
OPCODE
MSB
1DXDDDDXX
STATUS REGISTER IN
HIGH-IMPEDANCE
Table 11-4. Write Status Register Byte 2 Format
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
X X X RSTE X X X X
3 1
AT25DF041B
DS-25DF041B–040E–2/2017
Figure 11-4. Write Status Register Byte 2
12. Other Commands and Functions
12.1 Read Manufacturer and Device ID
Identification information can be read from the device to enable systems to electronically query and identify the device
while it is in system. The identification method and the command opcode comply with the JEDEC standard for
“Manufacturer and Device ID Read Methodology for SPI Compatible Serial Interface Memory Devices”. The type of
information that can be read from the device includes the JEDEC defined Manufacturer ID, the vendor specific Device ID,
and the vendor specific Extended Device Information.
Since not all Flash devices are capable of operating at very high clock frequencies, applications should be designed to
read the identification information from the devices at a reasonably low clock frequency to ensure all devices used in the
application can be identified properly. Once the identification process is complete, the application can increase the clock
frequency to accommodate specific Flash devices that are capable of operating at the higher clock frequencies.
To read the identification information, the CS pin must first be asserted and the opcode of 9Fh must be clocked into the
device. After the opcode has been clocked in, the device will begin outputting the identification data on the SO pin during
the subsequent clock cycles. The first byte that will be output will be the Manufacturer ID followed by two bytes of Device
ID information. The fourth byte output will be the Extended Device Information String Length, which will be 00h indicating
that no Extended Device Information follows. After the Extended Device Information String Length byte is output, the SO
pin will go into a high-impedance state; therefore, additional clock cycles will have no affect on the SO pin and no data
will be output. As indicated in the JEDEC standard, reading the Extended Device Information String Length and any
subsequent data is optional.Deasserting the CS pin will terminate the Manufacturer and Device ID read operation and
put the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not require that a full
byte of data be read.
SCK
CS
SI
SO
MSB
2310
0011000
6754
Opcode
10 119814151312
1
MSB
XXXDXXXX
Status Register In
Byte 2
High-impedance
Table 12-1. Manufacturer and Device ID Information
Byte No. Data Type Value
1Manufacturer ID 1Fh
2Device ID (Part 1) 44h
3Device ID (Part 2) 02h
4Extended Device Information String Length 00h
3 2
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Figure 12-1. Read Manufacturer and Device ID
12.2 Deep Power-Down
During normal operation, the device will be placed in the standby mode to consume less power as long as the CS pin
remains deasserted and no internal operation is in progress. The Deep Power-Down command offers the ability to place
the device into an even lower power consumption state called the Deep Power-Down mode.
When the device is in the Deep Power-Down mode, all commands including the Read Status Register command will be
ignored with the exception of the Resume from Deep Power-Down command. Since all commands will be ignored, the
mode can be used as an extra protection mechanism against program and erase operations.
Entering the Deep Power-Down mode is accomplished by simply asserting the CS pin, clocking in the opcode of B9h,
and then deasserting the CS pin. Any additional data clocked into the device after the opcode will be ignored. When the
CS pin is deasserted, the device will enter the Deep Power-Down mode within the maximum time of tEDPD.
The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must be deasserted on an
even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and return to the standby mode
once the CS pin is deasserted. In addition, the device will default to the standby mode after a power-cycle.
The Deep Power-Down command will be ignored if an internally self-timed operation such as a program or erase cycle is
in progress. The Deep Power-Down command must be reissued after the internally self-timed operation has been
completed in order for the device to enter the Deep Power-Down mode.
Table 12-2. Manufacturer and Device ID Details
Data Type Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
Hex
Value Details
Manufacturer ID
JEDEC Assigned Code
1Fh JEDEC Code: 0001 1111 (1Fh for Adesto)
0 0 0 1 1 1 1 1
Device ID (Part 1)
Family Code Density Code
44h Family Code: 010 (AT25F/AT25DFxxx series)
Density Code: 00100 (4-Mbit)
0 1 0 0 0 1 0 0
Device ID (Part 2)
Sub Code Product Version Code
02h Sub Code: 000 (Standard series)
Product Version: 00010
0 0 0 0 0 0 1 0
SCK
CS
SI
SO
60
9Fh
87 38
OPCODE
1Fh 44h 02h 00h
MANUFACTURER ID DEVICE ID
BYTE1
DEVICE ID
BYTE2
EXTENDED
DEVICE
INFORMATION
STRING LENGTH
HIGH-IMPEDANCE
14 1615 22 2423 30 3231
Note: Each transition shown for SI and SO represents one byte (8 bits)
3 3
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Figure 12-2. Deep Power-Down
12.3 Resume from Deep Power-Down
In order to exit the Deep Power-Down mode and resume normal device operation, the Resume from Deep Power-Down
command must be issued. The Resume from Deep Power-Down command is the only command that the device will
recognized while in the Deep Power-Down mode.
To resume from the Deep Power-Down mode, the CS pin must first be asserted and opcode of ABh must be clocked into
the device. Any additional data clocked into the device after the opcode will be ignored. When the CS pin is deasserted,
the device will exit the Deep Power-Down mode within the maximum time of tRDPD and return to the standby mode. After
the device has returned to the standby mode, normal command operations such as Read Array can be resumed.
If the complete opcode is not clocked in before the CS pin is deasserted, or if the CS pin is not deasserted on an even
byte boundary (multiples of eight bits), then the device will abort the operation and return to the Deep Power-Down
mode.
Figure 12-3. Resume from Deep Power-Down
SCK
CS
SI
SO
MSB
I
CC
2310
10111001
6754
OPCODE
HIGH-IMPEDANCE
Standby Mode Current
Active Current
Deep Power-Down Mode Current
t
EDPD
SCK
CS
SI
SO
MSB
ICC
2310
10101011
6754
OPCODE
HIGH-IMPEDANCE
Deep Power-Down Mode Current
Active Current
Standby Mode Current
t
RDPD
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12.4 Ultra-Deep Power-Down
The Ultra-Deep Power-Down mode allows the device to further reduce its energy consumption compared to the existing
standby and Deep Power-Down modes by shutting down additional internal circuitry. When the device is in the Ultra-
Deep Power-Down mode, all commands including the Status Register Read and Resume from Deep Power-Down
commands will be ignored. Since all commands will be ignored, the mode can be used as an extra protection mechanism
against inadvertent or unintentional program and erase operations. Entering the Ultra-Deep Power-Down mode is
accomplished by simply asserting the CS pin, clocking in the opcode 79h, and then deasserting the CS pin. Any
additional data clocked into the device after the opcode will be ignored. When the CS pin is deasserted, the device will
enter the Ultra-Deep Power-Down mode within the maximum time of tEUDPD
The complete opcode must be clocked in before the CS pin is deasserted; otherwise, the device will abort the operation
and return to the standby mode once the CS pin is deasserted. In addition, the device will default to the standby mode
after a power cycle. The Ultra-Deep Power-Down command will be ignored if an internally self-timed operation such as a
program or erase cycle is in progress.
Figure 12-4. Ultra-Deep Power-Down
12.5 Exit Ultra-Deep Power-Down
To exit from the Ultra-Deep Power-Down mode, any one of three operations can be performed:
Chip Select Toggle
The CS pin must simply be pulsed by asserting the CS pin, waiting the minimum necessary tCSLU time, and then
deasserting the CS pin again. To facilitate simple software development, a dummy byte opcode can also be entered
while the CS pin is being pulsed; the dummy byte opcode is simply ignored by the device in this case. After the CS pin
has been deasserted, the device will exit from the Ultra-Deep Power-Down mode and return to the standby mode within
a maximum time of tXUDPD If the CS pin is reasserted before the tXUDPD time has elapsed in an attempt to start a new
operation, then that operation will be ignored and nothing will be performed.
SCK
CS
SI
SO
MSB
ICC
2310
0
6754
Opcode
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
Standby Mode Current
tEUDPD
1111001
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Figure 12-5. Exit Ultra-Deep Power-Down (Chip Select Toggle)
Chip Select Low
By asserting the CS pin, waiting the minimum necessary tXUDPD time, and then clocking in the first bit of the next Opcode
command cycle. If the first bit of the next command is clocked in before the tXUDPD time has elapsed, the device will exit
Ultra Deep Power Down, however the intended operation will be ignored.
Figure 12-6. Exit Ultra-Deep Power-Down (Chip Select Low)
Power Cycling
The device can also exit the Ultra Deep Power Mode by power cycling the device. The system must wait for the device to
return to the standby mode before normal command operations can be resumed. Upon recovery from Ultra Deep Power
Down all internal registers will be at there Power-On default state.
12.6 Hold
The HOLD pin is used to pause the serial communication with the device without having to stop or reset the clock
sequence. The Hold mode, however, does not have an affect on any internally self-timed operations such as a program
or erase cycle. Therefore, if an erase cycle is in progress, asserting the HOLD pin will not pause the operation, and the
erase cycle will continue until it is finished.
The Hold mode can only be entered while the CS pin is asserted. The Hold mode is activated simply by asserting the
HOLD pin during the SCK low pulse. If the HOLD pin is asserted during the SCK high pulse, then the Hold mode won’t be
started until the beginning of the next SCK low pulse. The device will remain in the Hold mode as long as the HOLD pin
and CS pin are asserted.
While in the Hold mode, the SO pin will be in a high-impedance state. In addition, both the SI pin and the SCK pin will be
ignored. The WP pin, however, can still be asserted or deasserted while in the Hold mode.
CS
SO
I
CC
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
Standby Mode Current
tXUDPD
tCSLU
CS
SO
I
CC
High-impedance
Ultra-Deep Power-Down Mode Current
Active Current
tXUDPD
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To end the Hold mode and resume serial communication, the HOLD pin must be deasserted during the SCK low pulse. If
the HOLD pin is deasserted during the SCK high pulse, then the Hold mode won’t end until the beginning of the next SCK
low pulse.
If the CS pin is deasserted while the HOLD pin is still asserted, then any operation that may have been started will be
aborted, and the device will reset the WEL bit in the Status Register back to the logical “0” state.
Figure 12-7. Hold Mode
12.7 Reset
In some applications, it may be necessary to prematurely terminate a program or erase operation rather than wait the
hundreds of microseconds or milliseconds necessary for the program or erase operation to complete normally. The
Reset command allows a program or erase operation in progress to be ended abruptly and returns the device to an idle
state. Since the need to reset the device is immediate, the Write Enable command does not need to be issued prior to the
Reset command. Therefore, the Reset command operates independently of the state of the WEL bit in the Status
Register.
The Reset command can be executed only if the command has been enabled by setting the Reset Enabled (RSTE) bit in
the Status Register to a Logical 1 using write status register byte 2 command 31h. This command should be entered
before a program command is entered. If the Reset command has not been enabled (the RSTE bit is in the Logical 0
state), then any attempts at executing the Reset command will be ignored.
To perform a Reset, the CS pin must first be asserted, and then the opcode F0h must be clocked into the device. No
address bytes need to be clocked in, but a confirmation byte of D0h must be clocked into the device immediately after the
opcode. Any additional data clocked into the device after the confirmation byte will be ignored. When the CS pin is
deasserted, the program operation currently in progress will be terminated within a time of tSWRST. Since the program or
erase operation may not complete before the device is reset, the contents of the page being programmed or erased
cannot be guaranteed to be valid.
The Reset command has no effect on the states of the Configuration Register or RSTE bit in the Status Register. Apart
from Sequential Programming, the WEL bit will be reset back to its default state.
The complete opcode and confirmation byte must be clocked into the device before the CS pin is deasserted, and the CS
pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no Reset operation will be
performed.
SCK
CS
HOLD
Hold HoldHold
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Table 12-3. Reset
13. Electrical Specifications
SCK
CS
SI
SO
MSB
2310
1111000
6754
Opcode Confirmation Byte In
10 119814151312
0
MSB
11010000
High-impedance
13.1 Absolute Maximum Ratings*
Temperature under Bias. . . . . . . . -55°C to +125°C*Notice: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at these or any other
conditions beyond those indicated in the operational
sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended
periods may affect device reliability.
Storage Temperature . . . . . . . . . . -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground . . . . . . . . . .-0.6V to +4.1V
All Output Voltages
with Respect to Ground . . . . . .-0.6V to VCC + 0.5V
13.2 DC and AC Operating Range
AT25DF041B
Operating Temperature (Case) Ind. -40°C to 85°C
VCC Power Supply 1.65V to 3.6V
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13.3 DC Characteristics
Symbol Parameter Condition
1.65V to 3.6V 2.3V to 3.6V
UnitsMin Typ Max Min Typ Max
IUDPD
Ultra-Deep Power-
Down Current
CS = VCC. All other
inputs at 0V or VCC
0.2 0.6 0.3 0.6 µA
IDPD (1) Deep Power-Down
Current
CS = VCC. All other
inputs at 0V or VCC
515 815 µA
ISB Standby Current CS = VCC. All other
inputs at 0V or VCC
25 40 25 40 µA
ICC1(2)(3) Active Current, Low
Power Read (03h,
0Bh) Operation
f = 1MHz; IOUT = 0mA 4.5 74.5 7mA
f = 20MHz; IOUT = 0mA 4.5 85.5 8mA
ICC2(2)(3)
Active Current,
Read Operation
f = 50MHz; IOUT = 0mA 5.5 85.5 8mA
f = 85MHz; IOUT = 0mA 5.5 85.5 8mA
ICC3(2)(3) Active Current,
Program Operation CS = VCC 11.5 15 11.5 15 mA
ICC4 (2) (3) Active Current,
Erase Operation CS = VCC 10.5 14 10.5 14 mA
ILI Input Load Current All inputs at CMOS
levels 1 1 µA
ILO
Output Leakage
Current
All inputs at CMOS
levels 1 1 µA
VIL Input Low Voltage VCC x
0.2
VCC x
0.3 V
VIH Input High Voltage VCC x 0.8 VCC x 0.7 V
VOL Output Low Voltage IOL = 100µA 0.2 0.4 V
VOH
Output High
Voltage IOH = -100µA VCC -
0.2V
VCC -
0.2V V
1. Max. specification is 20µA @ 85°C.
2. Typical values measured at 1.8V @ 25°C for the 1.65V to 3.6V range.
3. Typical values measured at 3.0V @ 25°C for the 2.3V to 3.6V range.
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13.4 AC Characteristics - Maximum Clock Frequencies
Symbol Parameter
1.65V to 3.6V 2.3V to 3.6V
UnitsMin Typ Max Min Typ Max
fCLK
Maximum Clock Frequency for All Operations
(including 0Bh opcode) 104 104 MHz
fRDLF
Maximum Clock Frequency for 03h Opcode
(Read Array – Low Frequency) 25 33 MHz
fRDDO
Maximum Clock Frequency for 3B Opcode
50 50 MHz
13.5 AC Characteristics – All Other Parameters
Symbol Parameter
1.65V to 3.6V 2.3V to 3.6V
UnitsMin Typ Max Min Typ Max
tCLKH Clock High Time 4.5 4.5 ns
tCLKL Clock Low Time 4 4 ns
tCLKR(1) Clock Rise Time, Peak-to-Peak (Slew Rate) 0.1 0.1 V/ns
tCLKF(1) Clock Fall Time, Peak-to-Peak (Slew Rate) 0.1 0.1 V/ns
tCSH Chip Select High Time 35 25 ns
tCSLS Chip Select Low Setup Time (relative to Clock) 6 5 ns
tCSLH Chip Select Low Hold Time (relative to Clock) 6 5 ns
tCSHS Chip Select High Setup Time (relative to Clock) 6 5 ns
tCSHH Chip Select High Hold Time (relative to Clock) 6 5 ns
tDS Data In Setup Time 2 2 ns
tDH Data In Hold Time 1 1 ns
tDIS(1) Output Disable Time 8 6 ns
tVOutput Valid Time 7.5 6ns
tOH Output Hold Time 0 0 ns
tHLS HOLD Low Setup Time (relative to Clock) 6 5 ns
tHLH HOLD Low Hold Time (relative to Clock) 6 5 ns
tHHS HOLD High Setup Time (relative to Clock) 6 5 ns
tHHH HOLD High Hold Time (relative to Clock) 6 5 ns
tHLQZ(1) HOLD Low to Output High-Z 7 6 ns
tHHQX(1) HOLD High to Output Low-Z 7 6 ns
tWPS(1) Write Protect Setup Time 20 20 ns
tWPH(1) Write Protect Hold Time 100 100 ns
tEDPD(1) Chip Select High to Deep Power-Down 0.5 0.5 µs
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Notes: 1. Not 100% tested (value guaranteed by design and characterization).
Note: 1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.
2. Not 100% tested (value guaranteed by design and characterization).
tEUDPD(1) Chip Select High to Ultra Deep Power-Down 0.5 0.5 µs
tSWRST Software Reset Time 40 40 µs
tCSLU
Minimum Chip Select Low to Exit Ultra Deep
Power-Down 20 20 ns
tXUDPD Exit Ultra Deep Power-Down Time 70 70 µs
tRDPD(1) Chip Select High to Standby Mode 8 8 µs
13.6 Program and Erase Characteristics
Symbol Parameter
1.65V-3.6V 2.3V-3.6V
Min Typ Max Min Typ Max Units
tPP(1) Page Program Time 256 Bytes 1.25 2.5 1.25 2.5 ms
tBP Byte Program Time 8 8 µs
tPE Page Erase Time 256 Bytes 615 615 ms
tBLKE(1) Block Erase Time
4 Kbytes 35 40 35 40
ms32 Kbytes 250 300 250 280
64 Kbytes 450 600 450 550
tCHPE(1)(2) Chip Erase Time 3.6 4.5 3.6 4sec
tOTPP(1) OTP Security Register Program Time 400 950 400 950 µs
tWRSR Write Status Register Time 200 200 ns
13.5 AC Characteristics – All Other Parameters
Symbol Parameter
1.65V to 3.6V 2.3V to 3.6V
UnitsMin Typ Max Min Typ Max
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14. Power-On/Reset State
When power is first applied to the device, or when recovering from a reset condition, the output pin (SO) will be in a high
impedance state, and a high-to-low transition on the CSB pin will be required to start a valid instruction. The SPI mode
(Mode 3 or Mode 0) will be automatically selected on every falling edge of CSB by sampling the inactive clock state.
14.1 Power-Up/Power-Down Voltage and Timing Requirements
During power-up, the device must not be READ for at least the minimum tVCSL time after the supply voltage reaches the
minimum VPOR level (VPOR min). While the device is being powered-up, the internal Power-On Reset (POR) circuitry
keeps the device in a reset mode until the supply voltage rises above the minimum Vcc. During this time, all operations
are disabled and the device will not respond to any commands.
If the first operation to the device after power-up will be a program or erase operation, then the operation cannot be
started until the supply voltage reaches the minimum VCC level and an internal device delay has elapsed. This delay will
be a maximum time of tPUW. After the tPUW time, the device will be in the standby mode if CSB is at logic high or active
mode if CSB is at logic low. For the case of Power-down then Power-up operation, or if a power interruption occurs (such
that VCC drops below VPOR max), the Vcc of the Flash device must be maintained below VPWD for at least the minimum
specified TPWD time. This is to ensure the Flash device will reset properly after a power interruption.
Table 14-1. Voltage and Timing Requirements for Power-Up/Power-Down
Figure 14-1. Power-Up Timing
Symbol Parameter Min Max Units
VPWD (1)
1. Not 100% tested (value guaranteed by design and characterization).
VCC for device initialization 1.0 V
tPWD(1) Minimum duration for device initialization 300 µs
tVCSL Minimum VCC to chip select low time for Read command 70 µs
tVR(1) VCC rise time 1500000 µs/V
VPOR Power on reset voltage 1.45 1.6 V
tPUW Power up delay time before Program or Erase is allowed 3ms
VCC
VPOR max
Max VPWD
Time
tPWD
tPUW Full Operation Permitted
tVR
tVCSL
Read Operation
Permitted
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14.2 Input Test Waveforms and Measurement Levels
14.3 Output Test Load
15. AC Waveforms
Figure 15-1. Serial Input Timing
AC
DRIVING
LEVELS
AC
MEASUREMENT
LEVEL
0.1V
CC
V
CC
/2
0.9V
CC
t
R
, t
F
< 2 ns (10% to 90%)
Device
Under
Test
30pF
CS
SI
SCK
SO
MSB
HIGH-IMPEDANCE
MSBLSB
tCSLS
tCLKH tCLKL tCSHS
tCSHH
tDS tDH
tCSLH
tCSH
4 3
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Figure 15-2. Serial Output Timing
Figure 15-3. WP Timing for Write Status Register Command When BPL = 1
Figure 15-4. HOLD Timing – Serial Input
CS
SI
SCK
SO
tV
tCLKH tCLKL tDIS
tV
tOH
WP
SI
SCK
SO
000
HIGH-IMPEDANCE
MSBX
t
WPS
t
WPH
CS
LSB OF
WRITE STATUS REGISTER
DATA BYTE
MSB OF
WRITE STATUS REGISTER
OPCODE
MSB OF
NEXT OPCODE
CS
SI
SCK
SO
tHHH tHLS
tHLH tHHS
HOLD
HIGH-IMPEDANCE
4 4
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Figure 15-5. HOLD Timing – Serial Output
16. Ordering Information
16.1 Ordering Code Detail
CS
SI
SCK
SO
tHHH tHLS
tHLQZ
tHLH tHHS
HOLD
tHHQX
AT25D 04 SS NHB1B– –F
Designator
Product Family
Device Density
04 = 4-megabit
Interface
1 = Serial Package Option
MA = 8-pad, 2 x 3 x 0.6 mm UDFN
M = 8-pad, 5 x 6 x 0.6 mm UDFN
SS = 8-lead, 0.150" wide SOIC
XM = 8-lead TSSOP
DWF = Die in Wafer Form
U = 8-ball WLCSP
Device Grade
H = Green, NiPdAu lead finish,
Industrial temperature range
(–40°C to +85°C)
U = Green, Matte Sn or Sn alloy,
Industrial temperature range
(–40°C to +85°C)
Shipping Carrier Option
B = Bulk (tubes)
T = Tape and reel
Y = Tray
Operating Voltage
N = 1.65V to 3.6V
Device Revision
4 5
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Ordering Code( (1) Package Lead Finish Operating Voltage
Max. Freq.
(MHz) Operation Range
AT25DF041B-SSHN-B
AT25DF041B-SSHN-T 8S1
NiPdAu 1.65V to 3.6V
104
Industrial
(-40°C to +85°C)
AT25DF041B-MHN-Y
8MA1
AT25DF041B-MHN-T
AT25DF041B-MAHN-T 8MA3
AT25DF041B-XMHN-B
8X
AT25DF041B-XMHN-T
AT25DF041B-DWF (2) DWF
AT25DF041B-UUN-T (3) 8-WLCSP
AT25DF041B-UUNHR-T (4) 8-WLCSP 85 Extended
(-40°C to +125°C)
1. The shipping carrier option code is not marked on the device.
2. Contact Adesto for mechanical drawing or Die Sales information.
3. Contact Adesto for WLCSP availability and lead time.Handle product in accordance with UV and ESD precautions.
4. Contact Adesto for WLCSP availability and lead time.Handle product in accordance with UV and ESD precautions. See datasheet addendum for
operating details.
Package Type
8S1 8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)
8MA1 8-pad, 5 x 6 x 0.6mm, Thermally Enhanced Plastic Ultra Thin Dual Flat No-lead (UDFN)
8MA3 8-pad, 2 x 3 x 0.6mm, Thermally Enhanced Plastic Ultra Thin Dual Flat No Lead Package (UDFN)
8X 8-lead, Thin Shrink Small Outline Package
DWF Die in Wafer Form
8-WLCSP 8-ball, 3 x 2 x3mm Ball Matrix, 0.35mm Z-Height
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17. Packaging Information
17.1 8S1 – JEDEC SOIC
DRAWING NO. REV. TITLE GPC
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A1 0.10 – 0.25
A 1.35 – 1.75
b 0.31 – 0.51
C 0.17 – 0.25
D 4.80 – 5.05
E1 3.81 – 3.99
E 5.79 – 6.20
e 1.27 BSC
L 0.40 – 1.27
ØØ 0° – 8°
ØØ
EE
11
NN
TOP VIEWTOP VIEW
CC
E1E1
END VIEW
AA
bb
LL
A1A1
ee
DD
SIDE VIEWSIDE VIEW
Package Drawing Contact:
contact@adestotech.com
8S1 G
8/20/14
Notes: This drawing is for general information only.
Refer to JEDEC Drawing MS-012, Variation AA
for proper dimensions, tolerances, datums, etc.
8S1, 8-lead (0.150” Wide Body), Plastic Gull
Wing Small Outline (JEDEC SOIC) SWB
4 7
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17.2 8MA1 – 5 x 6 UDFN
TITLE DRAWING NO.GPC REV.
Package Drawing Contact:
contact@adestotech.com 8MA1 YFG D
8MA1, 8-pad (5 x 6 x 0.6 mm Body), Thermally
Enhanced Plastic Ultra Thin Dual Flat No Lead
Package (UDFN)
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX N O T E
A 0.45 0.55 0.60
A1 0.00 0.02 0.05
b 0.35 0.40 0.48
C 0.152 REF
D 4.90 5.00 5.10
D2 3.80 4.00 4.20
E 5.90 6.00 6.10
E2 3.20 3.40 3.60
e 1.27
L 0.50 0.60 0.75
y 0.00 – 0.08
K 0.20 – –
4/15/08
Pin 1 ID
TOP VIEW
E
D
A1
A
SIDE VIEW
y
C
BOTTOM VIEW
E2
D2
L
b
e
1
2
3
4
8
7
6
5
Pin #1 Notch
(0.20 R)
0.45
K
Pin #1
Cham f e r
(C 0.35)
Option A
(Option B)
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17.3 8MA3 – 2 x 3 UDFN
TITLE DRAWING NO.GPC REV.
Package Drawing Contact:
contact@adestotech.com
®
8MA3YCQ GT
8MA3, 8-pad, 2 x 3 x 0.6 mm Body, 0.5 mm Pitch,
1.6 x 0.2 mm Exposed Pad, Saw Singulated
Thermally Enhanced Plastic Ultra Thin Dual
Flat No Lead Package (UDFN/USON)
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX
A 0.45 0.60
A1 0.00 0.05
A3 0.150 REF
b 0.20 0.30
D 2.00 BSC
D2 1.50 1.60 1.70
E 3.00 BSC
E2 0.10 0.20 0.30
e 0.50 BSC
L 0.40 0.45 0.50
L1 0.00 0.10
L3 0.30 0.50
eee – – 0.08
8/26/14
Notes: 1. All dimensions are in mm. Angles in degrees.
2. Bilateral coplanarity zone applies to the exposed heat
sink slug as well as the terminals.
D
14
PIN 1 ID
E
5
23
678
eee
1
4
8
5
E2
D2
L3 L
Chamfer or half-circle
notch for Pin 1 indicator.
L1
4 9
AT25DF041B
DS-25DF041B–040E–2/2017
17.4 8X- TSSOP
DRAWING NO. REV. TITLE GPC
COMMON DIMENSIONS
(Unit of Measure = mm)
SYMBOL MIN NOM MAX NOTE
A - - 1.20
A1 0.05 - 0.15
A2 0.80 1.00 1.05
D 2.90 3.00 3.10 2, 5
E 6.40 BSC
E1 4.30 4.40 4.50 3, 5
b 0.19 – 0.30 4
e 0.65 BSC
L 0.45 0.60 0.75
L1 1.00 REF
C 0.09 - 0.20
Side View
End View
Top View
A2
A
L
L1
D
1
E1
N
b
Pin 1 indicator
this corner
E
e
Notes: 1. This drawing is for general information only. Refer to JEDEC
Drawing MO-153, Variation AA, for proper dimensions,
tolerances, datums, etc.
2. Dimension D does not include mold Flash, protrusions or gate
burrs. Mold Flash, protrusions and gate burrs shall not exceed
0.15mm (0.006in) per side.
3. Dimension E1 does not include inter-lead Flash or protrusions.
Inter-lead Flash and protrusions shall not exceed 0.25mm
(0.010in) per side.
4. Dimension b does not include Dambar protrusion. Allowable
Dambar protrusion shall be 0.08mm total in excess of the b
dimension at maximum material condition. Dambar cannot be
located on the lower radius of the foot. Minimum space between
protrusion and adjacent lead is 0.07mm.
5. Dimension D and E1 to be determined at Datum Plane H.
H
8X E
12/8/11
8X, 8-lead 4.4mm Body, Plastic Thin
Shrink Small Outline Package (TSSOP) TNR
C
A1
Package Drawing Contact:
contact@adestotech.com
5 0
AT25DF041B
DS-25DF041B–040E–2/2017
17.5 WLCSP-8
DRAWING NO. REV. TITLE GPC
3/14/17
CS-8, 8-ball (3x3x2 Array) Wafer Level Chip Scale
Package, WLCSP DEC
Package Drawing Contact:
contact@adestotech.com
CS8-013 0A
®
Pin Assignment Matrix
A B C D E
1
2
VCC HOLD
GND
* Dimensions are NOT to scale.
SO
CS
3
SCK
SI
WP
TOP VIEW BOTTOM VIEW
PIN #1 MARK
1.631±0.05
1.575±0.05
3
2
1
E
C
A
D
B
0.416+0.03
-0
0.4±0.015
(0.8)
0.35±0.015 0.438+0.03
-0
Ø0.25±0.03 (8X)
(0.7)
321
E
C
A
D
B
0.2±0.015
SIDE VIEW
0.08±0.017
0.022±0.005
0.23±0.015
0.35 (MAX)
0.05 A
A
5 1
AT25DF041B
DS-25DF041B–040E–2/2017
18. Revision History
Revision Level – Release Date History
A – September 2014 Initial release.
B – March 2015 Updated AC and DC operating specifications. Added DWF part
ordering code. Document status changed to Preliminary.
C – November 2015 Updated IDPD and ISB specification conditions. Added WLCSP
package. Updated document status from Preliminary to Complete.
D – February 2016 Corrected U package option and device grade. Added high
temperature WLCSP option. Updated memory array description.
E – February 2017 Added patent information.Updated description in Section 8.4 (Page
Erase). Replaced WLCSP-8 outline drawing.
Corporate Office
California | USA
Adesto Headquarters
3600 Peterson Way
Santa Clara, CA 95054
Phone: (+1) 408.400.0578
Email: contact@adestotech.com
© 2017 Adesto Technologies. All rights reserved. / Rev.: DS-25DF041B–040E–2/2017
Disclaimer: Adesto Technologies Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Adesto's Terms
and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications
detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Adesto are granted by the
Company in connection with the sale of Adesto products, expressly or by implication. Adesto's products are not authorized for use as critical components in life support devices or systems.
Adesto®, the Adesto logo, CBRAM®, and DataFlash® are registered trademarks or trademarks of Adesto Technologies. All other marks are the property of their respective
owners. Adesto products in this datasheet are covered by certain Adesto patents registered in the United States and potentially other countries. Please refer to
http://www.adestotech.com/patents for details.
