2MBI200S-120 IGBT Module
1200V / 200A 2 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Thermal resistance characteristics
Thermal resistance – – 0.085
– – 0.18
– 0.025 –
IGBT
Diode
the base to cooling fin
°C/W
°C/W
°C/W
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
G1 E1 G2 E2
C1 E2
C2E1
Item Symbol Characteristics Conditions Unit
Min. Typ. Max.
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Symbol
Collector-Emitter voltage VCES
Gate-Emitter voltaga VGES
Collector Continuous Tc=25°C IC
current Tc=80°C
1ms Tc=25°C IC pulse
Tc=80°C -IC
1ms -IC pulse
Max. power dissipation PC
Operating temperature Tj
Storage temperature Tstg
Isolation voltage *1Vis
Screw torque Mounting *2
Terminals *2
Rating
1200
±20
300
200
600
400
200
400
1500
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
Unit
V
V
A
A
A
A
A
A
W
°C
°C
V
N·m
N·m
*1 : Aii terminals should be connected together when isolation test will be done
*2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6)
Terminals 3.5 to 4.5 N·m(M6)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton
tr
tr(i)
toff
tf
VF
trr
– – 1.0
– – 0.4
5.5 7.2 8.5
– 2.3 2.6
– 2.8 –
– 24000 –
– 5000 –
– 4400 –
– 0.35 1.2
– 0.25 0.6
– 0.1 –
– 0.45 1.0
– 0.08 0.3
– 2.3 3.0
– 2.0 –
– – 0.35
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=200mA
Tc=25° C VGE=15V, IC=200A
Tc=125°C
VGE=0V
VCE=10V
f=1MHz
VCC=600V
IC=200A
VGE=±15V
RG=4.7 ohm
Tj=25°C IF=200A, VGE=0V
Tj=125°C
IF=200A
mA
µA
V
V
pF
µs
V
µs
Electrical characteristics (at Tj=25°C unless otherwise specified)
Symbol Characteristics Conditions Unit
Min. Typ. Max.
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
2MBI200S-120 IGBT Module
Characteristics (Representative)
012345
0
100
200
300
400
500
8V
10V
12V15V
VGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
Collector current : Ic [ A ]
Collector - Emitter voltage : VCE [ V ]
012345
0
100
200
300
400
500
8V
10V
12V
15V
VGE= 20V
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
012345
0
100
200
300
400
500
Tj= 25°C Tj= 125°C
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
5 10152025
0
2
4
6
8
10
Ic=100A
Ic= 200A
Ic= 400A
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
0 5 10 15 20 25 30 35
500
1000
5000
10000
100000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
Coes
Cres
Cies
0 500 1000 1500 2000
0
200
400
600
800
1000
Dynamic Gate charge (typ.)
Vcc=600V, Ic=200A, Tj= 25°C
Gate charge : Qg [ nC ]
Collector - Emitter voltage : VCE [ V ]
0
5
10
15
20
25
Gate - Emitter voltage : VGE [ V ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
2MBI200S-120 IGBT Module
0 100 200 300
50
100
500
1000
ton
tr
toff
tf
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 4.7ohm, Tj= 25°C
Switching time : ton, tr, toff, tf [ nsec ]
Collector current : Ic [ A ] 0 100 200 300
50
100
500
1000
tf
tr
ton
toff
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 4.7ohm, Tj= 125°C
Collector current : Ic [ A ]
Switching time : ton, tr, toff, tf [ nsec ]
1 10 100
50
100
500
1000
5000
toff
ton
tr
tf
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C
Gate resistance : Rg [ohm]
Switching time : ton, tr, toff, tf [ nsec ]
0 100 200 300 400
0
20
40
60
Err(25°C)
Eoff(25°C)
Eon(25°C)
Err(125°C)
Eoff(125°C)
Eon(125°C)
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=4.7ohm
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Collector current : Ic [ A ]
1 10 100
0
40
80
120
160
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Gate resistance : Rg [ohm]
Eon
Err
Eoff
0 200 400 600 800 1000 1200 1400
0
50
100
150
200
250
300
350
400
450
Reverse bias safe operating area
+VGE=15V, -VGE=<15V, Rg=>4.7ohm, Tj=<125°C
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
2MBI200S-120 IGBT Module
Outline Drawings, mm
mass : 370g
01234
0
100
200
300
400
500
Tj=25°C
Tj=125°C
Forward current vs. Forward on voltage (typ.)
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
0 100 200 300
10
100
500
Irr(125°C)
Irr(25°C)
trr(25°C)
trr(125°C)
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=4.7ohm
Forward current : IF [ A ]
Reverse recovery current : Irr [ A ]
Reverse recovery time : trr [ nsec ]
0.001 0.01 0.1 1
1E-3
0.01
0.05
0.1
1
Transient thermal resistance
Thermal resistanse : Rth(j-c) [ °C/W ]
Pulse width : Pw [ sec ]
FWD
IGBT
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
