2MBI200S-120 IGBT Module 1200V / 200A 2 in one-package Features * High speed switching * Voltage drive * Low inductance module structure Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES Tc=25C IC Tc=80C Tc=25C IC pulse Tc=80C -IC -IC pulse PC Tj Tstg V is Mounting *2 Terminals *2 Rating 1200 20 300 200 600 400 200 400 1500 +150 -40 to +125 AC 2500 (1min. ) 3.5 4.5 Unit V V A A A A A A W C C V N*m N*m Equivalent Circuit Schematic C2E1 E2 C1 G1 mm G2 E2 . de ew n for *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : Mounting 2.5 to 3.5 N*m(M5 or M6) Terminals 3.5 to 4.5 N*m(M6) E1 n sig Electrical characteristics (at Tj=25C unless otherwise specified) Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Cies Coes t No Forward on voltage Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time d en Characteristics Min. Typ. Max. - - 1.0 - - 0.4 5.5 7.2 8.5 - 2.3 2.6 - 2.8 - - 24000 - - 5000 - - 4400 - - 0.35 1.2 - 0.25 0.6 - 0.1 - - 0.45 1.0 - 0.08 0.3 - 2.3 3.0 - 2.0 - - - 0.35 o c e r Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=200mA Tc=25 C VGE=15V, IC=200A Tc=125C VGE=0V VCE=10V f=1MHz VCC =600V IC=200A VGE=15V RG=4.7 ohm mA A V V Tj=25C Tj=125C IF=200A V IF=200A, VGE=0V pF s s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. - - - - - 0.025 Conditions Unit Max. 0.085 IGBT 0.18 Diode the base to cooling fin - *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ C/W C/W C/W IGBT Module 2MBI200S-120 Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 125C (typ.) Collector current vs. Collector-Emiiter voltage Tj= 25C (typ.) 500 500 400 Collector current : Ic [ A ] Collector current : Ic [ A ] 12V VGE= 20V 15V VGE= 20V15V 12V 400 300 10V 200 300 10V 200 100 100 8V 8V 0 0 0 1 2 3 4 5 0 3 4 Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) 5 10 Tj= 125C Collector - Emitter voltage : VCE [ V ] 300 8 ew n for 200 e m m . de 6 4 n sig Ic= 400A nd 100 0 0 1 2 o c e r 3 t 4 Ic= 200A 2 Ic=100A 0 5 5 10 15 20 Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C Dynamic Gate charge (typ.) Vcc=600V, Ic=200A, Tj= 25C No Collector - Emitter voltage : VCE [ V ] 100000 Cies 10000 5000 Coes Cres 25 1000 25 800 20 600 15 400 10 200 5 1000 500 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 500 1000 Gate charge : Qg [ nC ] http://store.iiic.cc/ 1500 0 2000 Gate - Emitter voltage : VGE [ V ] Tj= 25C 400 Collector current : Ic [ A ] 2 Collector - Emitter voltage : VCE [ V ] 500 Capacitance : Cies, Coes, Cres [ pF ] 1 Collector - Emitter voltage : VCE [ V ] IGBT Module 2MBI200S-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 4.7ohm, Tj= 25C Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg= 4.7ohm, Tj= 125C 1000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff 500 ton tr 100 tf 500 ton tr tf 100 50 50 0 100 200 300 0 100 Collector current : Ic [ A ] 200 300 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=15V, Tj= 25C Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=4.7ohm 5000 60 ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] toff tr 1000 500 100 1 10 t No eco for 20 n sig w ne Eon(25C) Eoff(125C) Eoff(25C) Err(125C) Err(25C) 0 100 r . de 40 nd e mm tf 50 Eon(125C) 0 100 Gate resistance : Rg [ohm] 200 300 400 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=15V, Tj= 125C Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>4.7ohm, Tj=<125C 450 160 350 120 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] 400 Eon 80 40 Eoff 300 250 200 150 100 50 Err 0 0 1 10 100 0 Gate resistance : Rg [ohm] 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1200 1400 IGBT Module 2MBI200S-120 Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=4.7ohm Forward current vs. Forward on voltage (typ.) 500 500 Tj=25C Tj=125C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 400 300 200 100 0 Irr(125C) trr(125C) 100 Irr(25C) trr(25C) 10 0 1 2 3 4 0 100 200 300 Forward current : IF [ A ] Forward on voltage : VF [ V ] Transient thermal resistance Thermal resistanse : Rth(j-c) [ C/W ] 1 FWD 0.1 de IGBT 0.05 ew n for 0.01 1E-3 0.001 0.01 nd e mm 0.1 o c e r 1 Pulse width : Pw [ sec ] t No Outline Drawings, mm mass : 370g http://store.iiic.cc/ . n sig