VS-16F(R) Series
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Revision: 11-Jan-18 1Document Number: 93491
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Recovery Diodes,
(Stud Version), 16 A
FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V VRRM
• Designed and qualified for industrial and consumer level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Battery charges
• Converters
• Power supplies
• Machine tool controls
ELECTRICAL SPECIFICATIONS SPECIFICATIONS
PRIMARY CHARACTERISTICS
IF(AV) 16 A
Package DO-4 (DO-203AA)
Circuit configuration Single
DO-4 (DO-203AA)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IF(AV)
16 A
TC 140 °C
IF(RMS) 25 A
IFSM
50 Hz 350 A
60 Hz 370
I2t50 Hz 612 A2s
60 Hz 560
VRRM Range 100 to 1200 V
TJ-65 to +175 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE
PEAK VOLTAGE
V
IRRM MAXIMUM
AT TJ = 175 °C
mA
VS-16F(R)
10 100 150
12
20 200 275
40 400 500
60 600 725
80 800 950
100 1000 1200
120 1200 1400
VS-16F(R) Series
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Revision: 11-Jan-18 2Document Number: 93491
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature IF(AV) 180° conduction, half sine wave 16 A
140 °C
Maximum RMS forward current IF(RMS) 25 A
Maximum peak, one-cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
350
A
t = 8.3 ms 370
t = 10 ms 100 % VRRM
reapplied
295
t = 8.3 ms 310
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
612
A2s
t = 8.3 ms 560
t = 10 ms 100 % VRRM
reapplied
435
t = 8.3 ms 395
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 6120 A2s
Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 0.77 V
High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 0.90
Low level value of forward
slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum 7.80
m
High level value of forward
slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 5.70
Maximum forward voltage drop VFM Ipk = 50 A, TJ = 25 °C, tp = 400 μs rectangular wave 1.23 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating
temperature range TJ-65 to +175 °C
Maximum storage temperature range TStg -65 to +200
Maximum thermal resistance,
junction to case RthJC DC operation 1.6
K/W
Maximum thermal resistance,
case to heat sink RthCS Mounting surface, smooth, flat and greased 0.5
Allowable mounting torque
Not lubricated threads 1.5 + 0 - 10 %
(13)
N · m
(lbf · in)
Lubricated threads 1.2 + 0 - 10 %
(10)
N · m
(lbf · in)
Approximate weight 7g
0.25 oz.
Case style See dimensions - link at the end of datasheet DO-4 (DO-203AA)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.31 0.23
TJ = TJ maximum K/W
120° 0.38 0.40
90° 0.49 0.54
60° 0.72 0.75
30° 1.20 1.21
VS-16F(R) Series
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Revision: 11-Jan-18 3Document Number: 93491
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
130
140
150
160
170
180
0 4 8 12 16 20
60°
90°
120°
180°
Maximum Allowable
Case Temperature (°C)
Conduction Angle
Average Forward Current (A)
16F(R) Series
R (DC) = 1.6 K/W
thJC
30°
Maximum Allowable
Case Temperature (°C)
Average Forward Current (A)
130
140
150
160
170
180
0 5 10 15 20 25 30
DC
30°
60°
90°
120°
180°
Conduction Period
16F(R) Series
R (DC) = 1.6 K/W
thJC
25 50 75 100
Maximum Allowable Ambient Temperature (°C)
10K/W
15K
/W
R=4K/W-DeltaR
thSA
6K/W
8K/W
20K/W
30K/W
0
4
8
12
16
20
0 4 8 12 16 20
Average Forward Current (A)
RMS Limit
Maximum Average Forward Power Loss (W)
Conduction Angle
180°
120°
90°
60°
30°
16F(R) Series
T = 175°C
J
25 50 75 100
Maximum Allowable Ambient Temperature (°C)
10K/W
15K/W
R=4K/W-DeltaR
thSA
6K/W
8K/W
20K/W
30K/W
0
5
10
15
20
25
0 5 10 15 20 25 30
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Limit
Maximum Average Forward Power Loss (W)
Conduction Period
16F(R) Series
T = 175°C
J
VS-16F(R) Series
www.vishay.com Vishay Semiconductors
Revision: 11-Jan-18 4Document Number: 93491
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
125
150
175
200
225
250
275
300
325
1 10 100
Peak Half Sine Wave Forward Current (A)
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
16F(R) Series
Initial T = 175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
J
125
150
175
200
225
250
275
300
325
350
0.01 0.1 1
Peak Half Sine Wave Forward Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
16F(R) Series
Initial T = 175°C
No Voltage Reapplied
Rated V Reapplied
RRM
Versus Pulse Train Duration.
J
1
10
100
1000
0 1 2 3 4 5 6
TJ = 25°C
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
16F(R) Series
TJ = 175°C
Z
thJC
-
Transient Thermal Impedance (°C/W)
0.1
1
10
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
16F(R) Series
Steady State Value
R = 1.6 K/W
(DC Operation)
thJC
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95311
2- Current rating: code = IF(AV)
1-Vishay Semiconductors product
3- F = standard device
4- None = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
5- Voltage code x 10 = VRRM (see Voltage Ratings table)
6-None = stud base DO-4 (DO-203AA) 10-32UNF-2A
M = stud base DO-4 (DO-203AA) M5 x 0.8
Device code
5 61 32 4
16VS- F R 120 M
Document Number: 95311 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 30-Jun-08 1
DO-203AA (DO-4)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
3.30 (0.13)
4.00 (0.16)
5.50 (0.22) MIN.
10.20 (0.40)
MAX.
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
0.8 ± 0.1
(0.03 ± 0.004)
R 0.40
R (0.02)
Ø 6.8 (0.27)
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
3.50 (0.14)
20.30 (0.80) MAX.
11 (0.43)
2
+ 0.3
0
(0.08 )
+ 0.01
0
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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