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LM146/LM346 Programmable Quad Operational Amplifiers
Check for Samples: LM146,LM346
1FEATURES DESCRIPTION
The LM146 series of quad op amps consists of four
2• (ISET=10 μA) independent, high gain, internally compensated, low
• Programmable Electrical Characteristics power, programmable amplifiers. Two external
• Battery-Powered Operation resistors (RSET) allow the user to program the gain
bandwidth product, slew rate, supply current, input
• Low Supply Current: 350 μA/Amplifier bias current, input offset current and input noise. For
• Ensured Gain Bandwidth Product: 0.8 MHz Min example, the user can trade-off supply current for
• Large DC Voltage Gain: 120 dB bandwidth or optimize noise figure for a given source
resistance. In a similar way, other amplifier
• Low Noise Voltage: 28 nV/√Hz characteristics can be tailored to the application.
• Wide Power Supply Range: ±1.5V to ±22V Except for the two programming pins at the end of
• Class AB Output Stage–No Crossover the package, the LM146 pin-out is the same as the
Distortion LM124 and LM148.
• Ideal Pin Out for Biquad Active Filters
• Input Bias Currents are Temperature
Compensated
Connection Diagram
Figure 1. Dual-In-Line Package - Top View
See Package Number NFE0016A, D0016A or N16A
PROGRAMMING EQUATIONS
Total Supply Current = 1.4 mA (ISET/10 μA)
Gain Bandwidth Product = 1 MHz (ISET/10 μA)
Slew Rate = 0.4V/μs (ISET/10 μA)
Input Bias Current ≃≃ 50 nA (ISET/10 μA)
ISET =Current into pin 8, pin 9 (see Schematic Diagram)
(1)
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
UNLESS OTHERWISE NOTED this document contains Copyright © 2004, Texas Instruments Incorporated
PRODUCTION DATA information current as of publication date.
Products conform to specifications per the terms of Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM146, LM346
SNOSBH5B –MAY 2004–REVISED SEPTEMBER 2004
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Capacitorless Active Filters (Basic Circuit)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)(2)(3)
LM146 LM346
Supply Voltage ±22V ±18V
Differential Input Voltage(2) ±30V ±30V
CM Input Voltage(2) ±15V ±15V
Power Dissipation(4) 900 mW 500 mW
Output Short-Circuit Duration(5) Continuous Continuous
Operating Temperature Range −55°C to +125°C 0°C to +70°C
Maximum Junction Temperature 150°C 100°C
Storage Temperature Range −65°C to +150°C −65°C to +150°C
Lead Temperature (Soldering, 10 seconds) 260°C 260°C
Thermal Resistance (θjA)(4) CDIP (NFE) Pd 900 mW 900 mW
θjA 100°C/W 100°C/W
SOIC (D) θjA 115°C/W
PDIP (N) Pd 500 mW
θjA 90°C/W
Soldering Information Dual-In-Line Package Soldering (10 seconds) +260°C +260°C
Small Outline Package Vapor Phase (60 seconds) +215°C +215°C
Infrared (15 seconds) +220°C +220°C
ESD rating is to be determined.
(1) Refer to RETS146X for LM146J military specifications.
(2) For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(4) The maximum power dissipation for these devices must be derated at elevated temperatures and is dictated by TjMAX,θjA, and the
ambient temperature, TA. The maximum available power dissipation at any temperature is Pd=(TjMAX - TA)/θjA or the 25°C PdMAX,
whichever is less.
(5) Any of the amplifier outputs can be shorted to ground indefinitely; however, more than one should not be simultaneously shorted as the
maximum junction temperature will be exceeded.
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DC ELECTRICAL CHARACTERISTICS
(VS=±15V, ISET=10 µA)(1)
Parameter Conditions LM146 LM346 Units
Min Typ Max Min Typ Max
Input Offset Voltage VCM=0V, RS≤50Ω, TA=25°C 0.5 5 0.5 6 mV
Input Offset Current VCM=0V, TA=25°C 2 20 2 100 nA
Input Bias Current VCM=0V, TA=25°C 50 100 50 250 nA
Supply Current (4 Op Amps) TA=25°C 1.4 2.0 1.4 2.5 mA
Large Signal Voltage Gain RL=10 kΩ,ΔVOUT=±10V, 100 1000 50 1000 V/mV
TA=25°C
Input CM Range TA=25°C ±13.5 ±14 ±13.5 ±14 V
CM Rejection Ratio RS≤10 kΩ, TA=25°C 80 100 70 100 dB
Power Supply Rejection Ratio RS≤10 kΩ, TA=25°C, 80 100 74 100 dB
VS= ±5 to ±15V
Output Voltage Swing RL≥10 kΩ, TA=25°C ±12 ±14 ±12 ±14 V
Short-Circuit TA=25°C 5 20 35 5 20 35 mA
Gain Bandwidth Product TA=25°C 0.8 1.2 0.5 1.2 MHz
Phase Margin TA=25°C 60 60 Deg
Slew Rate TA=25°C 0.4 0.4 V/μs
Input Noise Voltage f=1 kHz, TA=25°C 28 28 8 nV/√Hz
Channel Separation RL=10 kΩ,ΔVOUT=0V to 120 120 dB
±12V, TA=25°C
Input Resistance TA=25°C 1.0 1.0 MΩ
Input Capacitance TA=25°C 2.0 2.0 pF
Input Offset Voltage VCM=0V, RS≤50Ω0.5 6 0.5 7.5 mV
Input Offset Current VCM=0V 2 25 2 100 nA
Input Bias Current VCM=0V 50 100 50 250 nA
Supply Current (4 Op Amps) 1.7 2.2 1.7 2.5 mA
Large Signal Voltage Gain RL=10 kΩ,ΔVOUT=±10V 50 1000 25 1000 V/mV
Input CM Range ±13.5 ±14 ±13.5 ±14 V
CM Rejection Ratio RS≤50Ω70 100 70 100 dB
Power Supply Rejection Ratio RS≤50Ω, VS= ±5V to ±15V 76 100 74 100 dB
Output Voltage Swing RL≥10 kΩ±12 ±14 ±12 ±14 V
(1) These specifications apply over the absolute maximum operating temperature range unless otherwise noted.
DC ELECTRICAL CHARACTERISTIC
(VS=±15V, ISET=10 μA)
Parameter Conditions LM146 LM346 Units
Min Typ Max Min Typ Max
Input Offset Voltage VCM=0V, RS≤50Ω, 0.5 5 0.5 7 mV
TA=25°C
Input Bias Current VCM=0V, TA=25°C 7.5 20 7.5 100 nA
Supply Current (4 Op Amps) TA=25°C 140 250 140 300 μA
Gain Bandwidth Product TA=25°C 80 100 50 100 kHz
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DC ELECTRICAL CHARACTERISTICS
(VS=±1.5V, ISET=10 μA)
Parameter Conditions LM146 LM346 Units
Min Typ Max Min Typ Max
Input Offset Voltage VCM=0V, RS≤50Ω, 0.5 5 0.5 7 mV
TA=25°C
Input CM Range TA=25°C ±0.7 ±0.7 V
CM Rejection Ratio RS≤50Ω, TA=25°C 80 80 dB
Output Voltage Swing RL≥10 kΩ, TA=25°C ±0.6 ±0.6 V
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TYPICAL PERFORMANCE CHARACTERISTICS
Input Bias Current vs ISET Supply Current vs ISET
Figure 2. Figure 3.
Open Loop Voltage Gain
vs ISET Slew Rate vs ISET
Figure 4. Figure 5.
Gain Bandwidth Product
vs ISET Phase Margin vs ISET
Figure 6. Figure 7.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Input Offset Voltage Common-Mode Rejection
vs ISET Ratio vs ISET
Figure 8. Figure 9.
Power Supply Rejection Open Voltage Swing vs
Ratio vs ISET Supply Voltage
Figure 10. Figure 11.
Input Bias Current vs
Input Voltage Range vs Input Common-Mode
Supply Voltage Voltage
Figure 12. Figure 13.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Input Bias Current vs Input Offset Current vs
Temperature Temperature
Figure 14. Figure 15.
Supply Current vs Open Loop Voltage Gain
Temperature vs Temperature
Figure 16. Figure 17.
Gain Bandwidth Product Slew Rate vs
vs Temperature Temperature
Figure 18. Figure 19.
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Input Noise Voltage vs Input Noise Current vs
Frequency Frequency
Figure 20. Figure 21.
Power Supply Rejection Voltage Follower Pulse
Ratio vs Frequency Response
Figure 22. Figure 23.
Voltage Follower Transient
Response Transient Response Test Circuit
Figure 24. Figure 25.
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APPLICATION HINTS
Avoid reversing the power supply polarity; the device will fail.
COMMON-MODE INPUT VOLTAGE
The negative common-mode voltage limit is one diode drop above the negative supply voltage. Exceeding this
limit on either input will result in an output phase reversal. The positive common-mode limit is typically 1V below
the positive supply voltage. No output phase reversal will occur if this limit is exceeded by either input.
OUTPUT VOLTAGE SWING VS ISET
For a desired output voltage swing the value of the minimum load depends on the positive and negative output
current capability of the op amp. The maximum available positive output current, (ICL+), of the device increases
with ISET whereas the negative output current (ICL−) is independent of ISET.Figure 26 illustrates the above.
Figure 26. Output Current Limit vs ISET
INPUT CAPACITANCE
The input capacitance, CIN, of the LM146 is approximately 2 pF; any stray capacitance, CS, (due to external
circuit circuit layout) will add to CIN. When resistive or active feedback is applied, an additional pole is added to
the open loop frequency response of the device. For instance with resistive feedback (Figure 27), this pole
occurs at ½π(R1||R2) (CIN + CS). Make sure that this pole occurs at least 2 octaves beyond the expected −3 dB
frequency corner of the closed loop gain of the amplifier; if not, place a lead capacitor in the feedback such that
the time constant of this capacitor and the resistance it parallels is equal to the RI(CS+ CIN), where RIis the input
resistance of the circuit.
Figure 27. Resistive Feedback Circuit Example
TEMPERATURE EFFECT ON THE GBW
The GBW (gain bandwidth product), of the LM146 is directly proportional to ISET and inversely proportional to the
absolute temperature. When using resistors to set the bias current, ISET, of the device, the GBW product will
decrease with increasing temperature. Compensation can be provided by creating an ISET current directly
proportional to temperature (see Typical Applications).
ISOLATION BETWEEN AMPLIFIERS
The LM146 die is isothermally layed out such that crosstalk between all 4 amplifiers is in excess of −105 dB
(DC). Optimum isolation (better than −110 dB) occurs between amplifiers A and D, B and C; that is, if amplifier A
dissipates power on its output stage, amplifier D is the one which will be affected the least, and vice versa. Same
argument holds for amplifiers B and C.
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LM146 TYPICAL PERFORMANCE SUMMARY
The LM146 typical behaviour is shown in Figure 28. The device is fully predictable. As the set current, ISET,
increases, the speed, the bias current, and the supply current increase while the noise power decreases
proportionally and the VOSremains constant. The usable GBW range of the op amp is 10 kHz to 3.5−4 MHz.
Figure 28. LM146 Typical Characteristics
Low Power Supply Operation: The quad op amp operates down to ±1.3V supply. Also, since the internal
circuitry is biased through programmable current sources, no degradation of the device speed will occur.
SPEED VS POWER CONSUMPTION
LM146 vs LM4250 (single programmable). Through Figure 29, we observe that the LM146's power consumption
has been optimized for GBW products above 200 kHz, whereas the LM4250 will reach a GBW of no more than
300 kHz. For GBW products below 200 kHz, the LM4250 will consume less power.
Figure 29. LM146 vs LM4250
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• The LM334 provides an ISET directly proportional to absolute temperature. This cancels the slight GBW product
Temperature coefficient of the LM346.
Figure 32. Current Source Biasing with Temperature Compensation
• For ISET1≃ISET2 resistors R1 and R2 are not required if a slight error between the 2 set currents can be tolerated. If
not, then use R1 = R2 to create a 100 mV drop across these resistors.
Figure 33. Biasing all 4 Amplifiers with Single Current Source
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Active Filters Applications
Figure 34. Basic (Non-Inverting “State Variable”) Active Filter Building Block
Note. All resistor values are given in ohms.
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• If resistive biasing is used to set the LM346 performance, the Qoof this filter building block is nearly insensitive to
the op amp's GBW product temperature drift; it has also better noise performance than the state variable filter.
Figure 35. A Simple-to-Design BP, LP Filter Building Block
Circuit Synthesis Equations
•For the eventual use of amplifier C, see comments above. (2)
Figure 36. A 3-Amplifier Notch Filter (or Elliptic Filter Building Block)
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Circuit Synthesis Equations
•For nothing but a notch output: RIN=R, C′=C. (3)
Figure 37. Capacitorless Active Filters (Basic Circuit)
1. Pick up a convenient value for b; (b < 1)
2. Adjust Qothrough R5
3. Adjust Ho(BP) through R4
4. Adjust fothrough RSET. This adjusts the unity gain frequency (fu) of the op amp.
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Ex: fc= 20 kHz, Ho(gain of the filter) = 1, Q01 = 0.541, Qo2 = 1.306.
•Since for this filter the GBW product of all 4 amplifiers has been designed to be the same (∼1 MHz) only one current
source can be used to bias the circuit. Fine tuning can be further accomplished through Rb.
Figure 38. A 4th Order Butterworth Low Pass Capacitorless Filter
Miscellaneous Applications
• For better performance, use a matched NPN pair.
Figure 39. A Unity Gain Follower with Bias Current Reduction
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• By pulling the SET pin(s) to V−the op amp(s) shuts down and its output goes to a high impedance state. According
to this property, the LM346 can be used as a very low speed analog switch.
Figure 40. Circuit Shutdown
Figure 41. Voice Activated Switch and Amplifier
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• CMRR: 100 dB (typ)
• Power dissipation: 0.4 mW
Figure 42. x10 Micropower Instrumentation Amplifier with Buffered Input Guarding
Schematic Diagram
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PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead/Ball Finish
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LM346M/NOPB LIFEBUY SOIC D 16 48 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM346M
LM346MX/NOPB LIFEBUY SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU SN Level-1-260C-UNLIM 0 to 70 LM346M
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 14-Aug-2017
Addendum-Page 2
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LM346MX/NOPB SOIC D 16 2500 330.0 16.4 6.5 10.3 2.3 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 23-Sep-2013
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LM346MX/NOPB SOIC D 16 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 23-Sep-2013
Pack Materials-Page 2
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