HITACHI 2SB1025 SILICON PNP EPITAXIAL LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2501418 i. Base 2. Cofectes 3 Eanes a Coblecsy Wlange} (Dirensions in mod vb bee BAS acy (UPAK) MAXIMUM COLLECTOR DISSIPATION - CURVE ABSOLUTE MAXIMUM RATINGS (T2=25C) lenny Symbot 2581025 Gait be | | v - - : i i _ Collector to base voltage Vooo | 2000 aa s coef ence feces af Collector to emitter voltage | Vceo gO . _. & : i Emitter to base voltage Veso 3 a S oa ~~ Co : _ Collector current ic _. ot A Z ; Collector peak current ictpeak3*! ~2 _. _. AL z _ Collector power dissipation | Pc** i Ww i os " | Jpoction temperature Ty 150 ed fC ; G ene fer | Storage temperate Tag SS w+Hl5O Je) ane \ Gb wt 108 50 * FAW 5 fOms, Duty cycle < 20% * Value ont the atunsina ceramic board (12.5 x 20 <0. 7Tiwad Acobient teaiperaieze Ta OC y MELECTRICAL CHARACTERISTICS (Ta=25C) hem af Symbol, nnn Ae Conan Collector to base breakdown voltage | Wesmcua | des Opa Ie OO JY Collector to emitter breakdown volage VaERCEO _ic#hma, Rav = oe | ~ a _ Emitter to base breakdown voltage VarjeRo iy -LOpA, bo = 0 ome OW Collector cutoff current | lego TN BA DC current taunsfer ratio _ fre Ne OA en eee heer | Mens 03, fo = ~S00mA (Pulse test) Collector to eminer saturation voltage | Meet) |e = 500m A, In = ~ 50m A, (Pulse lest) 7 cee A Base to emitier voltage . Vee Vee = SV les ASO A ho Gain bandwidih product oad, MOBS TOM, Hes an Mie Collector ouiput capacitance Coe Ves = HOV, ft IMHz _pk * Dre 2553 1025 ts grouped by heEt as follows. Mark | DH ne ! pK | 2 Dt 200 160 w 326 1 GO te 120 HITACHI 2SB1025 TYPICAL OUTPUT CHARACTERISTICS TYPICAL TRANSFER CHARACTERISTICS Pulse Fog ae SV 5 5 & & 5 ~ 5 ~s TTS 4 Ya Coidlector ta emitter vohage Yer (V) Base te emnitter voltage Vie (V) DC CURRENT TRANSFER RATIO SATURATION VOLTAGE VS. COLLECTOR CURRENT VS. COLLECTOR CURRENT 86 4 ~O2 DC earrent ersaster catia AN: ~3if Collector fo cinitter sazuration veltage Yotow: (Vv) a2 ot Bune te cunitter saturation woRage Vices (V} ot as ~ 18 H > EE - Lag Collect current We imA) Cottector carreat ie Gn A} GAIN BANDWIDTH PRODUCT COLLECTOR OUTPUT CAPACITANCE vS. COLLECTOR CURRENT VS. COLLECTOR TO BASE VOLTAGE 5 400 206 Gan bandwidth product fr (MH2} Collector outper vapacitaace Coe cp) ee a8 Yo o 2k 1 $8) 4 ? * ~ ~ 2 Catlector current ie toby Callecier igs hand wolkire Vou (Vi