Semiconductor Group 330/Jan/1998
BUZ 102 SL
SPP47N05L
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS
≥
2 * ID * RDS(on)max, ID = 33 A
gfs 10 - -
S
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Ciss - 1380 1730
pF
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Coss - 410 515
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss - 230 290
Turn-on delay time
VDD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6
Ω
td(on)
- 15 25
ns
Rise time
VDD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6
Ω
tr
- 30 45
Turn-off delay time
VDD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6
Ω
td(off)
- 30 45
Fall time
VDD = 30 V, VGS = 4.5 V, ID = 47 A
RG = 3.6
Ω
tf
- 20 30
Gate charge at threshold
VDD = 40 V, ID = 0.1 A, VGS =0 to 1 V
Qg(th) - 2 3
nC
Gate charge at 5.0 V
VDD = 40 V, ID = 47 A, VGS =0 to 5 V
Qg(5) - 35 55
Gate charge total
VDD = 40 V, ID = 47 A, VGS =0 to 10 V
Qg(total) - 60 90
Gate plateau voltage
VDD = 40 V, ID = 47 A
V(plateau) - 4.1 -
V