2N7002E S amHop Microelectronics C orp. Augus t , 2002 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S R DS (ON) ( W ) ID S uper high dense cell design for low R DS (ON ). Max R ugged and reliable. 3.0 @ V G S = 10V 60V S OT-23 package. 0. 25A 4.0 @ V G S = 5V D S OT-23 D G S G S AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e S ymbol P arameter Limit Unit Drain-S ource Voltage V DS 60 V Gate-S ource Voltage V GS 20 V Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed ID 250 mA IDM 1.0 A Drain-S ource Diode Forward C urrent a IS 250 mA Maximum P ower Dissipation a PD 200 mW T J , T S TG -55 to 150 C Operating Junction and S torage Temperature R ange THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 1 625 C /W 2N7002E E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 10uA Zero Gate Voltage Drain Current IDS S V DS = 60V, V GS = 0V Gate-Body Leakage IGS S V GS = 20V, V DS = 0V Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS Min Typ C Max Unit OFF CHAR ACTE R IS TICS 60 V 1 uA 100 nA 2.5 V V GS =10V, ID = 250mA 3.0 ohm V GS =5V, ID = 50mA 4.0 ohm ON CHAR ACTE R IS TICS b Forward Transconductance DYNAMIC CHAR ACTE R IS TICS C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS R ise Time Turn-Off Delay Time Fall Time V DS = 7V, ID = 200mA 2.0 mA 500 80 mS c Input Capacitance Turn-On Delay Time V DS = 7V, V GS = 10V 1 V DS =25V, V GS = 0V f =1.0MH Z 19 50 PF 10 25 PF 3 5 PF 7.5 20 ns c tD(ON) V DD = 30V, ID = 100mA, V GS = 10V, R GEN=10 ohm tr tD(OFF) tf 7.5 3 2 ns 6 20 ns ns 7 2N7002E E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 0.76 1.5 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300 us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 2.0 2.5 V DS =10V V G S =10,9,8,7,6,5,4V 1.6 I D , Drain C urrent (A) I D , Drain C urrent (A) 2.0 1.5 1.0 0.5 1.2 0.8 25 C T j=125 C 0.4 -55 C 3V 0 0 0 1 2 3 4 5 0.0 6 1.0 2.0 3.0 4.0 5.0 6.0 V G S , G ate-to-S ource Voltage (V ) V DS , Drain-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 3.0 R DS (ON) , Normalized Drain-S ource, On-R es is tance 30 25 C , C apacitance (pF ) 7 V GS = 0V, Is = 115mA VSD C is s 20 15 C os s 10 5 C rs s V G S =10V 2.5 T j=125 C 2.0 1.5 25 C 1.0 0.5 -55 C 0 0 0 5 10 15 20 25 0 30 0.4 0.8 1.2 1.6 I D , Drain C urrent(A) V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 V 1.6 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 2N7002E V DS =V G S I D =250 uA 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 1.20 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 7 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 0.3 Is , S ource-drain current (A) gF S , T rans conductance (S ) 40.0 0.15 V DS =7V 1.0 0 0 0.1 0.2 0.3 0.4 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 10 5 V DS =25V I D =0.115A 8 I D , Drain C urrent (A) V G S , G ate to S ource V oltage (V ) 10.0 6 4 2 0 1 R Qg, T otal G ate C harge (nC ) im i t 1m 0.1 100 1s s ms ms DC 0.01 V G S =10V S ingle P uls e T A =25 C 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 )L 10 0.001 0 (O N DS 10 60 100 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 2N7002E V DD ton V IN D td(off) tf 90% 90% V OUT V OUT VG S R GE N toff tr td(on) RL 10% INVE R TE D 10% G 90% S V IN 7 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 1 0.5 D=0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 P DM 0.01 t1 1. 2. 3. 4. S ingle P uls e t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.001 0.0001 0.001 0.01 0.1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 10 100