60
N-C hannel E nhancement Mode F ield E ffect Trans is tor
August , 2002
AB S OL UT E MAXIMUM R AT INGS (T A=25 C unles s otherwis e
P arameter S ymbol Limit Unit
Drain-S ource Voltage VDS V
G ate-S ource Voltage VG S V
Drain C urrent-C ontinuous @ T
J
=125 C
-P ulsed
ID250 mA
A
mA
mW
IDM 1.0
Drain-S ource Diode F orward C urrent IS250
Maximum P ower Dissipation PD
Operating J unction and S torage
Temperature R ange TJ, T S T G -55 to 150 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-Ambient RthJ A 625 /W
C
2N7002E
200
a
a
a
a
b
G
DS
S OT -23
S
G
D
1
S amHop Microelectronics C orp.
PR ODUC T S UMMAR Y
VDS S IDRDS (ON) (
W
) Max
60V 0. 25A
3.0 @ V G S = 10V
4.0 @ V G S = 5V
F E ATUR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S OT-23 package.
20
2N7002E
E LE C T R IC AL C HAR AC T E R IS T IC S (T A=25 C unles s otherwis e noted)
P arameter S ymbol C ondition Min Typ Max Unit
OF F C HAR AC TE R IS TIC S
Drain-S ource B reakdown Voltage B V DS S =
VG S 0V, ID 10uA
=60 V
Zero G ate Voltage Drain C urrent IDS S VDS 60V, VG S 0V
= = 1uA
G ate-B ody Leakage IG S S VGS 20V, VDS 0V
==
100
nA
ON C HAR AC T E R IS T IC S b
G ate Threshold Voltage VG S (th) VDS VG S , ID = 250uA
=1 2.5 V
Drain-S ource On-S tate R esistance RDS (ON) VG S 10V, ID 250mA 3.0
VG S 5V, ID 50mA 4.0
On-S tate Drain C urrent ID(ON) VDS = 7V, VG S = 10V
500
80
mA
mSF orward Transconductance F S
gVDS 7V, ID 200mA
DY NAMIC C HAR AC T E R IS T IC S c
Input C apacitance CIS S
CR S S
COS S
Output C apacitance
R everse Transfer C apacitance
VDS =25V, V G S = 0V
f =1.0MHZ
19 50 PF
10 25 PF
PF
3 5
S WITC HING C HAR AC T E R IS T IC S c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(O F F )
tf
VDD = 30V,
ID = 100mA,
VG S = 10V,
RGE N=10 ohm
20 ns
ns
ns
ns
6
20
3
C
F all T ime
=
=
=
=
= =
2
7
2.0
ohm
ohm
7.5
7.5
P arameter S ymbol C ondition Min Typ Max Unit
E LE C T R IC AL C HAR AC T E R IS T IC S (T
A=25 C unles s otherwis e noted)
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
Diode F orward Voltage V
S D VG S = 0V, Is = 115mA 1.50.76 V
b
C
Notes
c.G uaranteed by design, not subject to production testing.
a.S urface Mounted on F R 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300 us, Duty C ycle 2%.
F igure 1. Output C haracteristics Figure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
F igure 3. C apacitance
VDS , Drain-to S ource Voltage (V )
VG S , G ate-to-S ource Voltage (V)
VDS , Drain-to-S ource Voltage (V )
ID, Drain C urrent(A)
C , C apacitance (pF )
Drain-S ource, On-R es is tance ID, Drain C urrent (A)
3
7
RDS (ON), Normalized
2N7002E
0 5 10 15 20 25 30
C iss
C os s
C rs s
30
25
20
15
10
5
0
-55 C
2.0
1.6
1.2
0.8
0.4
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VDS =10V
Tj=125 C 25 C
3.0
2.5
2.0
0 0.4 0.8 1.2 1.6
25 C
Tj=125 C
-55 C
1.5
1.0
0.5
0
VG S =10V
ID, Drain C urrent (A)
2.5
2.0
1.5
1.0
0.5
0
0 1 2 3 4 5 6
3V
VG S =10,9,8,7,6,5,4V
2N7002E
F igure 5. G ate T hreshold Variation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
Vth, Normalized
G ate-S ource T hres hold V oltage
gF S , T ransconductance (S )
VG S , G ate to S ource V oltage (V )
B V DS S , Normalized
Drain-S ource B reakdown Voltage
Is, S ource-drain current (A)
F igure 7. Trans conductance Variation
with Drain C urrent
IDS , Drain-S ource C urrent (A)
F igure 9. G ate C harge
Qg, T otal G ate C harge (nC )
F igure 10. Maximum S afe
Operating Area
VDS , Drain-S ource V oltage (V)
F igure 8. B ody Diode F orward Voltage
Variation with S ource C urrent
VS D, B ody Diode F orward V oltage (V)
Tj, J unction T emperature ( C ) Tj, J unction T emperature ( C )
ID, Drain C urrent (A)
4
7
40.0
10.0
1.0
0.4 0.6 0.8 1.0 1.2 1.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
VDS =VG S
ID=250
-50 -25 0 25 50 75 100 125 150
1.20
1.15
1.10
1.05
1.00
0.95
0.90
ID=250uA
0.3
0.15
0
0 0.1 0.2 0.3 0.4
VDS =7V
10
8
6
4
2
00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
DS
=25V
I
D
=0.115A
R
DS
(ON) Limit
100ms
1ms
10ms
DC
V
G S
=10V
S ingle P ulse
T
A
=25 C
1s
5
1
0.1
0.001
0.01
1 10 60 100
uA
F igure 11. S witching T est C ircuit F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
td(off)
90%
10% 10%
50% 50%
90%
toff
tf
90%
P ULS E WIDT H
Transient T hermal Impedance
S quare W ave P ulse Duration (s ec)
F igure 13. Normalized T hermal T ransient Impedance C urve
r(t),Normalized E ffective
5
7
2N7002E
INVE R T E D
1
0.5
0.2
0.1
0.01
0.001
0.05
10.10.010.0010.0001 10 100
D=0.5
0.2
0.1
0.05
0.02
0.01
S ingle P uls e
PDM
t1
t2
1. R thJ A (t)=r (t) * R thJ A
2. R thJ A=S ee Datasheet
3. T J M -TA = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
VDD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
