Band Switching Diodes
BA282, BA283
Vishay Semiconductors
Document Number: 85526 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 16-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• Silicon planar diodes
• Low dynamic forward resistance
• Low diode capacitance
• High reverse impedance
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
• Band switching in VHF-tuners
Note
(1) Tamb = 25 °C, unless otherwise specified
Note
(1) Tamb = 25 °C, unless otherwise specified
94 9367
PARTS TABLE
PART TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING REMARKS
BA282 rf at IF 3 mA = max. 0.7 ΩBA282-TR or BA282-TAP BA282 Tape and reel/ammopack
BA283 rf at IF 3 mA = max. 1.2 ΩBA283-TR or BA283-TAP BA283 Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Reverse voltage VR35 V
Forward continuous current IF100 mA
THERMAL CHARACTERISTICS (1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg - 55 to + 150 °C
BA282, BA283
Vishay Semiconductors Band Switching Diodes
Document Number: 85526 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 16-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 2
Note
(1) Tamb = 25 °C, unless otherwise specified
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
Fig. 1 - Dynamic Forward Resistance vs. Forward Current
Fig. 2 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35
ELECTRICAL CHARACTERISTICS (1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA VF1000 mV
Reverse current VR = 20 V IR50 nA
Diode capacitance
f = 100 MHz, VR = 1 V CD1.5 pF
f = 100 MHz, VR = 3 V BA282 CD1.25 pF
BA283 CD1.2 pF
Dynamic forward resistance
f = 200 MHz, IF = 3 mA BA282 rf0.7 Ω
BA283 rf1.2 Ω
f = 200 MHz, IF = 10 mA BA282 rf0.5 Ω
BA283 rf0.9 Ω
Reverse impedance f = 100 MHz, VR = 1 V zR100 kΩ
0.1 1 10
0.1
1
10
100
rf - Differential Forward Resistance (Ω)
IF - Forward Current (mA)
100
94 9072
BA282
BA283
f = 200 MHz
Tj = 25 °C
0.1 1 10
0
0.5
1.0
1.5
2.0
3.0
CD - Diode Capacitance (pF)
100
94 9073
2.5
VR - Reverse Voltage (V)
Tj = 25 °C
f = 200 MHz
BA283
BA282
94 9366
26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min.
0.55. (0.022) max
Cathode identification
1.7 (0.067)
1.5 (0.059)
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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