o = 2 = n Hittite HMC174MS8 a MICROWAVE CORPORATION GaAs MMIC MSOP8T/R SWITCH DC - 3 GHz FEBRUARY 1998 Features General Description ULTRA SMALL PACKAGE: MSOP8 The HMC174MS8 is a low-cost SPDT switch in an 8- lead MSOP package for use in transmit-receive appli- HIGH THIRD ORDER INTERCEPT: +60 dBm cations which require very low distortion at high signal SINGLE POSITIVE SUPPLY: +3 TO +10V power levels. The device can control signals from DC to 3.0 GHz and is especially suited for 90OMHz, 1.8- HIGH RF POWER CAPABILITY 2.2GHz, and 2.4GHz ISM applications with only 0.5 dB loss. The design provides exceptional! intermodulation performance; providing a +60dBm third order intercept at 8 Volt bias. RF1 or RF2 isa reflective short when "Off". On-chip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. They are especially suited for PCMCIA wireless card and cellular phone applica- tions. Electrical Performance, Vad = +5 Vdc, 50 Ohm System, -40 to +85 deg C ube eel cieloa | Min. Typ. Max. Units eseae |S hk : -2. z i . Insertion Loss DC - 25 GHz 07 10 GB DC - 3.0 GHz 1.4 1.8 dB se BOE : Isolation DC-25GHz > 17 21 dB DC - 3.0 GHz 13 17 dB : sss Be 2 : - 2.0 GHz Return Loss DC-25GHz 13 17 dB DC-3.0GHz 9 14 dB Input Power for 1dB Compression _0/8V Control 0.5 - 1.0 GHz 35 39 dBm cera eeenpentnnenienmeneenf OS 790 GAR | 880 88 Bm Input Third Order Intercept 0/8V Control 0.5 - 1.0 GHz 55 60 dBm co 4 O57 3.0 GH | 55 60 Bm Switching Characteristics DC - 3.0 GHz tRISE, tFALL (10/90% R 10 2 ons tON, tOFF (50% CTL to 10/90% octet ence cence lS 21 Cabot Road, Woburn, MA 01801 Phone: 781-933-7267 Fax: 781-932-8903 Web Site: www.hittite.com . 7-48 GaAs MMIC MSOP8 T/R SWITCH DC - 3 GHz FEBRUARY 1998 Insertion Loss Isolation o 0 | g _ to} n ao 6 a = 3 6 fe -20 Sf a ul a mn < -30 4 ee 5 -40 0 1 2 3 0 1 2 3 FREQUENCY (GHz) FREQUENCY (GHz) Return Loss 9 o = a & on oO g z . ~~ iu ec te a. z 0 1 2 3 FREQUENCY (GHz) S - Parameter data is available On-Line at www.hittite.com 21 Cabot Road, Woburn, MA 01801 Phone: 781-933-7267 Fax: 781-932-8903 Web Site: www.hittite.com 7-49 EBHittite HMC174MS8 MICROWAVE CORPORATION GaAs MMIC MSOP8T/R SWITCH DC - 3 GHz FEBRUARY 1998 Input 0.1 and 1.0 dB Input Third Order Compression vs Bias Voltage _ Intercept vs Bias Voltage 45 [ T r 65 L : :10B at 900MHz _ 1db at 1S00MHz : NY 60 & 40 feo ag - ' SB 2 55 zt 5 9 4c | zB OH 35 }- > 50 ty : : a Ff 0.408 at 900MHz 45 0.14B at 1900MHz 0 25 L__: 35 2 4 6 8 10 12 2 4 6 8 10 12 BIAS (Volts) BIAS (Volts) Compression vs Bias Voltage Distortion vs Bias Voltage ier tesa eta Lad ier me tL ied Se eC esl arg es merase eae era Relea Le le Ls Le ce dM . i potstol eras: atlael Second ae Teme me isicy far dB bial ames) eigen A] . lest am pe reese Order ; a a , r A Harmonic COME tc cL amar tect mere e ce Tol lees ALT mtercen) IMercent | crotch eins (dim) ect ls Meo odgee isis feta] Peri feisty ide) @ x = n Caution: Do not operate in 1dB compression at power levels above +35dBm and do not hot switch power levels greater than +23dBm (V., = +8Vdc). 21 Cabot Road, Woburn, MA 01801 Phone: 781-933-7267 Fax: 781-932-8903 Web Site: www.hittite.com 7-50 EaMittite HMC174MS8 MICROWAVE CORPORATION GaAs MMIC MSOP8T/R SWITCH DC - 3 GHz FEBRUARY 1998 Functional Diagram Truth Table *Control input Voltage Tolerances are + 0.2 Vdc RF2 GND GND RFT EPO tcc iettt en i HA A ot eChoice tals] Ciaran tiene TOI ae Vad Ey ct ao H th - _ ke: 7 | ee em mT et . cae Se Tee -- [jeg _ 1 I vs U ime 5 G 0 110 -55 85 OFF OFF 5 0 Vdd: 115 2 +100 2-15 ON OFF A 3 RE uJ joc fucsines enn sees 5 | Vdd 0 115 15 -100 5 OFF ON . . 10: 0 0 380. -180 0-190 (OFF OFF Absolute Maximum Ratings 10, 0 Vad 405 = 275 20SCON SCF Bias Voltage Range (Vdd) -0.2 to +12 Vdc 10 nT bee te ste evan ON Control Voltage Range (A & B) | -0.2 to +Vdd Vde 5 Vdd Vdd 600 6000: 225 CONC Storage Temperature -65 to +150 deg C 5 | Vdd Vdd 600 225 800. (OFF ON Operating Temperature 40 to +85 deg C rns digs minnie Lister nnd Outline ~| end 0.116/0.120 (2.96/3.05) RF2 RFI a H H H H A A a LOT NUMBER 2 | HMC XXXX 1 0.1380 120 0.188/0.196 2. | qi 74 {4.78/4.98) YYWW, PN are CODE HABE} HABE nr coe PINT A B RF +vdd WWe WEEK PIN 1 (REF) 0.036/0.042 0.032/0.036 (0.98/1.07) (0.81/0.91) 4 almdalells! M __ 0.00810.007 ae _7 Cree } (0.13/0.18) 0288 J L 0-5 | L OF OL TYP =| FP 0.012 TYP (0.68) (0.20) 9.024, MN TYP 1) MATERIAL: A) PACKAGE BODY: LOW STRESS INJECTION MOLDED F PLASTIC, SILICA& SILICONE IMPREGNATED EF 8)LEADFRAME MATERIAL: COPPER ALLOY 2. PLATING: LEAD-TIN SOLDER PLATE : 3. DIMENSIONS ARE iN INCHES (MILLIMETERS) E 21 Cabot Road, Woburn, MA 01801 Phone: 781-933-7267 Fax: 781-932-8903 Web Site: www.hittite.com 7-51 Switches Earittite HMC174MS8 MICROWAVE CORPORATION GaAs MMIC MSOP8T/R SWITCH DC - 3 GHz FEBRUARY 1998 Typical Application Circuit v CILO CMOS: RF 1. Control inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 2. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines towest frequency of operation. 3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at lower RF power capability) at bias voltages. down to +3V. 4. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface. Notes: 21 Cabot Road, Woburn, MA 01801 Phone: 781-933-7267 Fax: 781-932-8903 Web Site: www.hittite.com 7-52