BYT230PIV-1000 BYT231PIV-1000 (R) FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) K2 A2 A2 K1 2 x 30 A ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O VRRM 1000 V VF (max) 1.8 V trr (max) 80 ns K1 A1 K2 BYT231PIV-1000 A1 BYT230PIV-1000 FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE: ISOTOP Insulation voltage: 2500 VRMS Capacitance = 45 pF Inductance < 5 nH ISOTOPTM (Plastic) DESCRIPTION Dual high voltage rectifier devices are suited for free-wheeling function in converters and motor control circuits. Packaged in ISOTOP, they are intended for use in Switch Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IFRM Repetitive peak forward current IF(RMS) tp=5 s F=1kHz RMS forward current Value Unit 1000 V 700 A 50 A IF(AV) Average forward current Tc = 55C = 0.5 30 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 200 A Tstg Storage temperature range - 40 to + 150 C 150 C Tj Maximum operating junction temperature TM: ISOTOP is a registered trademark of STMicroelectronics. October 1999 - Ed: 3B 1/5 BYT230PIV-1000 / BYT231PIV-1000 THERMAL RESISTANCES Symbol Rth(j-c) Parameter Junction to case Rth(c) Per diode Total Value 1.5 0.8 Coupling 0.1 Unit C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF * Parameter Test Conditions Min. Typ. Max. 1.9 Unit V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Forward voltage drop Tj = 25C IF = 30 A 1.8 Tj = 100C IR ** Reverse leakage current Tj = 25C VR = VRRM Tj = 100C 100 A 5 mA Max. 165 Unit ns Pulse test : * tp = 380 s, < 2% ** tp = 5 ms, < 2% To evaluate the conduction losses use the following equation: P = 1.47 x IF(AV) + 0.010 IF2(RMS) RECOVERY CHARACTERISTICS (per diode) Symbol trr Test Conditions Tj = 25C Min. IF = 1A VR = 30V dIF/dt = - 15A/s Typ. 80 IF = 0.5A IR = 1A Irr = 0.25A TURN-OFF SWITCHING CHARACTERISTICS (per diode) Symbol tIRM IRM C= 2/5 VRP VCC Parameter Test Conditions Maximum reverse recovery time dIF/dt = - 120 A/s Maximum reverse recovery current dIF/dt = - 120 A/s Turn-off overvoltage coefficient Tj = 100C VCC = 200V IF = IF(AV) dIF/dt = - 30A/s Lp = 5H (see fig. 12) dIF/dt = - 240 A/s dIF/dt = - 240 A/s VCC = 200 V IF = 30 A Lp 0.05 H Tj = 100C (see fig. 11) Min. Typ. Max. Unit 200 ns 120 19.5 A 4.5 / 22 BYT230PIV-1000 / BYT231PIV-1000 Fig. 1: Low frequency power losses versus average current. P F(av)(W) 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0 5 =0.2 =0.1 Fig. 2: Peak current versus form factor. =1 =0.5 =0.05 T ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O I F(av)(A) 10 15 20 =tp/T 25 30 tp 35 Fig. 3: Non repetitive peak surge current versus overload duration. Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 5: Voltage drop versus forward current. Fig. 6: Recovery charge versus diF/dt. 3/5 BYT230PIV-1000 / BYT231PIV-1000 Fig. 7: Recovery time versus dIF/dt. Fig. 8: Peak reverse current versus dIF/dt. ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Fig. 9: Peak forward voltage versus dIF/dt. Fig. 10: Dynamic parameters versus junction temperature. Fig. 11: Turn-off switching characteristics (without serie inductance). Fig. 12: Turn-off switching characteristics (with serie inductance). IF IF DUT DUT VC C diF/dt LC diF/dt LC LP VF VCC VF VCC VRP IRM VC C tIRM 4/5 BYT230PIV-1000 / BYT231PIV-1000 PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. Millimeters Inches A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O Package Weight Base qty Delivery mode BYT230PIV-1000 BYT230PIV-1000 ISOTOP 28 g. (without screws) 10 Tube BYT231PIV-1000 BYT231PIV-1000 ISOTOP 28 g. (without screws) 10 Tube Ordering type Marking Cooling method: by conduction (C) Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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