BYT230PIV-1000 - STMicroelectronics

BYT230PIV-1000

BYT231PIV-1000

October 1999 - Ed: 3B

FAST RECOVERY RECTIFIER DIODES

Dual high voltage rectifier devices are suited for

free-wheeling function in converters and motor

control circuits.

Packaged in ISOTOP, they are intended for use in

Switch Mode Power Supplies.

DESCRIPTION

VERY LO W REVE RS E RE COV ER Y T IME

VERY LOW S WITCHING LOSSE S

LOW NOISE TURN-OFF SWITCHING

INSULATED PACKAGE: ISOTOP

Insulation voltage: 2500 VRMS

Capacitance = 45 pF

Inductance < 5 nH

FEAT URES AND BENE FITS

Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 1000 V

IFRM Repetitive peak f orward c urrent tp=5 µs F=1kHz 700 A

IF(RMS) RM S forward current 50 A

IF(AV) Average forward current Tc = 55°C

δ = 0.5 30 A

IFSM S urge non repetitive forward current tp = 10 ms Sinusoidal 200 A

Tstg Storage temperature range - 40 t o + 150 °C

Tj Maximum operating junction temperature 150 °C

ABSOLUTE RATINGS (limiting values, per diode)

IF(AV) 2 x 30 A

VRRM 1000 V

VF (max) 1.8 V

trr (max) 80 ns

MAIN PRODUCT CHARACTERISTI CS

ISOTOPTM

(Plastic)

K2 A2

A1K1

BYT231PIV-1000

A2 K1

A1K2

BYT230PIV-1000

TM: ISOTOP is a registered trademark of STMicroelectronics.

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Obsolete Product(s) - Obsolete Product(s)

Symbo l Parameter Test Conditions Min. Typ. Max. Unit

VF * Forward voltage drop Tj = 25°CI

= 30 A 1.9 V

Tj = 100°C1.8

IR ** Reverse leakage

current Tj = 25°CV

= VRRM 100 µA

Tj = 100°C5mA

Pulse test : * tp = 380 µs, δ < 2%

** tp = 5 ms, δ < 2%

STAT IC ELECTRICAL CHARACTE RISTICS (per diode)

Symbol Parameter Value Unit

Rth(j-c) Junction to case Per diode

Total 1.5

0.8 °C/W

Rth(c) Coupling 0.1

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode) x R th(j-c) (Per diode) + P(diode 2) x Rth(c)

THE RMA L RE SISTA NC ES

To evaluate the conduction losses use the following equation:

P = 1. 47 x IF(AV) + 0.010 IF2(RMS)

Symbol Test Conditions M in. Typ. Max. Unit

trr Tj = 25°C IF = 1A VR = 30V dIF/dt = - 15A/µs165 ns

IF = 0.5A IR = 1A Irr = 0.25A 80

RECOV ERY CHARAC TERISTI CS (per diode)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

tIRM Maximum reverse

recovery time dIF/dt = - 120 A/µsV

CC = 200 V

IF = 30 A

Lp ≤ 0.05 µH

Tj = 100° C

(see fig. 11)

200 ns

dIF/dt = - 240 A/µs120

IRM Maximum reverse

recovery current dIF/dt = - 120 A/µs19.5 A

dIF/dt = - 240 A/µs22

C = VRP

VCC

Turn-o f f ove rvolt ag e

coefficient Tj = 100°C VCC = 200V IF = IF(AV)

dIF/dt = - 30A/µs Lp = 5µH

(see fig. 12)

4.5 /

TURN-O FF SWITCHING CHARAC TERISTICS (per diode)

BYT23 0PIV-1000 / BYT231 PIV-1000

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Fig. 2: Peak curr e nt ve r su s f o rm f a ct or.

Fig. 3: Non repetitive peak surge current versus

overload duration. Fig. 4: Relative variation of thermal impedance

junction to case versus pulse duration.

0 5 10 15 20 25 30 35

=0.05

=0.1 =0.2 =0.5

=tp/T tp

IF(av)(A)

PF(av)(W)

Fig. 1: Low frequency power losses versus

average current.

Fig. 6: Recovery charge versus diF/dt.

Fig. 5: Voltage drop versus forward current.

BYT2 30PIV-1000 / BYT231PIV- 1000

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Obsolete Product(s) - Obsolete Product(s)

Fig. 7: Recovery time versus dIF/dt. Fig. 8: Peak reverse current versus dIF/dt.

Fig. 10: Dynamic parameters versus junction

temperature.

Fig. 9: Peak forward voltage versus dIF/dt.

Fig. 11: Turn-off switching characteristics (without

serie inductance). Fig. 12: Turn-off switching characteristics (with

serie inductance).

LC DUT

VCC

IRM VCC

tIRM

diF/dt

LC DUT

VCC

VRP VCC

diF/dt

BYT23 0PIV-1000 / BYT231 PIV-1000

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Obsolete Product(s) - Obsolete Product(s)

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of

use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by

implic ation or othe rwise un der any pat ent or pat ent rights of STMi croelec tronics. Specific ations ment ioned in t his publicati on are subject to

change without notice. This publication supersedes and replaces all information previously supplied.

STMicr oel ect roni cs products are not authorized f or use as crit ic al components i n l i fe s upport devices or sys tems without express w ri tte n ap-

proval of STMicroelectronics. The ST logo is a registered t rademark of STMicroe lectronics

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Ordering type Marking Package Weight Base qty Delivery

mode

BYT230P IV-1000 BYT230PIV -1000 ISO TOP 28 g. (without screws) 10 Tube

BYT231P IV-1000 BYT231PIV -1000 ISO TOP 28 g. (without screws) 10 Tube

Cooling method: by conduction (C)

Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 scre ws. (2 x M4 screws recom-

mended for mounting the package on the heatsink and the 4 screws given with the screw version).The

screws supplied with the package are adapted for mounting on a board (or other types of terminals) with

a thickness of 0.6 mm min and 2.2 mm max.

Epoxy meets UL94,V0

PACKAGE MECHANICAL DAT A

ISOTOP

REF. DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004

E1 23.85 24.15 0.939 0.951

E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504

G2 3.50 4.30 0.138 0.169

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

BYT2 30PIV-1000 / BYT231PIV- 1000

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Obsolete Product(s) - Obsolete Product(s)