2SK3589-01 FUJI POWER MOSFET200303 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25C ( unless otherwise specified) Item Drain-source voltage Symbol V DS VDSX ID Ratings 100 70 73 6.9 *4 292 30 73 319.2 20 5 2.4 *4 270 +150 -55 to +150 Unit V V A Continuous drain current A A Pulsed drain current ID(puls] V Gate-source voltage VGS A Repetitive or non-repetitive IAR *2 mJ Maximum Avalanche Energy EAS *1 kV/s Maximum Drain-Source dV/dt dV DS /dt kV/s Peak Diode Recovery dV/dt dV/dt *3 Max. power dissipation PD W W Operating and storage Tch C temperature range Tstg C < *1 L=71.9H, Vcc=48V, See to Avalanche Energy Graph *2 Tch =150C *3 *4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2) Remarks Equivalent circuit schematic (4) Drain(D) VGS=30V Ta=25C VDS < =100V (1) Gate(G) (2) Source(S) [signal line] (3) Source(S) [power line] Ta=25C IF < = BVDSS, Tch < = 150C = -ID, -di/dt=50A/s, Vcc < Electrical characteristics atTc =25C ( unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS Tch=25C VDS =100V VGS=0V Tch=125C VDS =80V VGS=0V VGS=30V VDS=0V ID=25A VGS=10V IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD trr Qrr ID=25A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=25A VGS=10V Min. 100 3.0 15 RGS=10 V CC =50V ID=50A VGS=10V L=71.5 H Tch=25C IF=50A VGS=0V Tch=25C IF=50A VGS=0V -di/dt=100A/s Tch=25C Typ. 10 19 30 1830 460 38 20 35 50 23 52 16 18 Max. 5.0 25 250 100 25 2745 690 57 30 53 75 35 78 24 27 73 1.10 0.1 0.4 1.65 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) *4 Test Conditions channel to case channel to ambient channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.463 87.0 52.0 Units C/W C/W C/W 1 2SK3589-01 FUJI POWER MOSFET Characteristics 5 Allowable Power Dissipation PD=f(Tc) Allowable Power Dissipation PD=f(Tc) 400 Surface mounted on 1000mm2,t=1.6mm FR-4 PCB (Drain pad area : 500mm2) 350 4 300 250 PD [W] PD [W] 3 2 200 150 100 1 50 0 0 0 25 50 75 100 125 150 0 25 50 75 Tc [C] 100 125 150 Tc [C] Typical Output Characteristics Typical Transfer Characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 200 20V 10V 100 160 ID[A] ID [A] 120 8V 10 7.5V 80 1 7.0V 6.5V 40 6.0V 0.1 VGS=5.5V 0 0 2 4 6 8 10 12 0 1 2 3 VDS [V] 4 5 6 7 8 9 10 VGS[V] Typical Transconductance Typical Drain-Source on-state Resistance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C RDS(on)=f(ID):80s Pulse test, Tch=25C 100 0.15 VGS= 5.5V 6.0V 6.5V 7.0V 0.12 7.5V gfs [S] RDS(on) [ ] 10 0.09 8V 0.06 10V 1 0.03 20V 0.1 0.1 1 10 100 0.00 0 ID [A] 40 80 120 160 200 ID [A] http://store.iiic.cc/ 2 2SK3589-01 60 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=25A,VGS=10V 7.0 Gate Threshold Voltage vs. Tch A VGS(th)=f(Tch):VDS=VGS,ID=250 6.5 6.0 50 5.5 max. VGS(th) [V] RDS(on) [ m ] 5.0 40 max. 30 4.5 4.0 3.5 3.0 min. 2.5 20 typ. 2.0 1.5 10 1.0 0.5 0.0 0 -50 -25 0 25 50 75 100 125 -50 150 -25 0 25 Tch [C] 50 75 100 125 150 Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=50A, Tch=25C 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 14 12 Ciss 10 Vcc= 50V 0 C [nF] VGS [V] 10 8 Coss 6 10 -1 4 2 Crss 0 0 20 40 60 10 80 -2 -1 10 10 0 Qg [nC] 10 1 2 10 VDS [V] Typical Forward Characteristics of Reverse Diode Typical Switching Characteristics vs. ID IF=f(VSD):80s Pulse test,Tch=25C t=f(ID):Vcc=48V, VGS=10V, RG=10 100 10 3 tf 10 2 10 1 td(off) tr t [ns] IF [A] 10 td(on) 1 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 VSD [V] 0 10 -1 10 0 10 1 10 2 ID [A] http://store.iiic.cc/ 3 2SK3589-01 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V 800 IAS=30A 700 600 IAS=44A EAS [mJ] 500 400 IAS=73A 300 200 100 0 0 25 50 75 100 125 150 starting Tch [C] 2 Avalanche Current I AV [A] 10 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Single Pulse 1 10 0 10 10 -1 -2 10 -8 10 10 -7 -6 10 10 -5 -4 10 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd http://store.iiic.cc/ 4