1
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 100
VDSX 70
Continuous drain current ID±73
±6.9 *4
Pulsed drain current ID(puls] ±292
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 73
Maximum Avalanche Energy EAS *1 319.2
Maximum Drain-Source dV/dt dVDS/dt 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD2.4 *4
270
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics atTc =25°C ( unless otherwise specified)
Thermalcharacteristics
2SK3589-01 FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
for Switching
Absolute Maximum Ratings at Tc=25°C
( unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=100V VGS=0V
VDS=80V VGS=0V
VGS=±30V
ID=25A VGS=10V
ID=25A VDS=25V
VCC=48V ID=25A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient
Rth(ch-a) *4 channel to ambient
0.463
87.0
52.0
°C/W
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=50V
ID=50A
VGS=10V
L=71.5 µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
A
V
A
mJ
kV/µs
kV/µs
W
W
°C
°C
100
3.0 5.0
25
250
10 100
19 25
15 30
1830 2745
460 690
38 57
20 30
35 53
50 75
23 35
52 78
16 24
18 27
73 1.10 1.65
0.1
0.4
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Super F AP-G Series
Foot Print Pattern
(1) Gate(G)
(3) Source(S)
[power line]
(4) Drain(D)
(2) Source(S)
[signal line]
VGS=30V
Ta=25°C
VDS 100V
Ta=25°C
=
<
*4 Surface mounted on 1000mm2, t=1.6mm FR-4 PCB(Drain pad area:500mm2)
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<
*1 L=71.9µH, Vcc=48V, See to Avalanche Energy Graph *2 Tch 150°C
=
<
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2
Characteristics
2SK3589-01 FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
024681012
0
40
80
120
160
200 20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0 40 80 120 160 200
0.00
0.03
0.06
0.09
0.12
0.15
7.0V
6.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
Allowable Power Diss i pat ion
PD=f(Tc)
PD [W]
Tc [°C]
0 25 50 75 100 125 150
0
1
2
3
4
5Surface mounted on
1000m m2,t=1. 6m m FR -4 PC B
(Dr ain pad area : 500m m2)
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
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3
2SK3589-01 FUJI POWER MOSFET
VGS=f(Qg):ID=50A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
-50 -25 0 25 50 75 100 125 150
0
10
20
30
40
50
60
RDS(on) [ m Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=25A,VGS=10V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
VGS(th) [V]
Tch [°C]
µA
0 20406080
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 50V
10-1 100101102
10-2
10-1
100
101
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
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4
2SK3589-01 FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum T ransient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
800
IAS=30A
IAS=73A
IAS=44A
EAS [mJ]
starting Tch [ °C]
Maximum Avalanche Energy vs. starting Tch
EAS=f(st arting Tch) :Vc c =48V
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):start ing Tch= 25°C,Vcc=48V
Avalanche Current I AV [A]
tAV [sec]
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