ILQ30 - Siemens Semiconductors - Datasheet.Directory

5–1

FEATURES

• Current T ransfer Ratio

IL/ILD/ILQ30/55, 100% min.

IL/ILD/ILQ31, 200% min.

• 125 mA Load Current Rating

• Fast Rise Time, 10

• Fast Fall Time, 35

• Single, Dual and Quad Channel

• Solid State Reliability

• Standard DIP Packages

• Underwriters Lab File #E52744

• VDE 0884 Available with Option 1

DESCRIPTION

The IL30/31/55, ILD30/31/55, and ILQ30/31/55 are

optically coupled isolators wih Gallium Arsenide

infrared emitters and silicon photodarlington sen-

sors. Switching can be achieved while maintaining

a high degree of isolation between driving and

load circuits, with no crosstalk between channels.

These optocouplers can be used to replace reed

and mercury relays with advantages of long life,

high speed switching and elimination of magnetic

ﬁelds.

The Il30/31/55 are equivalent to MCA230/MCA231/

MCA255. The ILD30/31/55 re designed to reduce

board space requirements in high density applica-

tions.

Maximum Ratings

Emitter

(each channel)

Peak Reverse Voltage........................................ 3 V

Continuous Forward Current.........................60 mA

Power Dissipation at 25

C.........................100 mW

Derate Linearly from 25

C ...................1.33 mW/

Detector

(each channel)

Collector-Emitter Breakdown Voltage

IL/D/Q30.......................................................30 V

IL/D/Q55.......................................................55 V

Collector (Load) Current.............................125 mA

Power Dissipation at 25

C Ambient...........150 mW

Derate Linearly from 25

C .....................2.0 mW/

Package

Total Package Power Dissipation at 25

IL30/31/55................................................250 mW

ILD30/31/55.............................................400 mW

ILQ30/31/55.............................................500 mW

Derate Linearly from 25

IL30/31/55............................................3.3 mW/

ILD30/31/55.......................................5.33 mW/

ILQ30/31/55.......................................6.67 mW/

Isolation Test Voltage........................ 5300 VAC

RMS

Creepage................................................7 mm min.

Clearance...............................................7 mm min.

Comparative Tracking Index............................. 175

Storage Temperature...................–55

C to +125

Operating Temperature................–55

C to +100

Lead Soldering Time at 260

C ....................10 sec.

.008 (.20)

.012 (.31)

.130 (3.30)

.150 (3.81)

.130 (3.30)

.150 (3.81)

.280 (7.11)

.330 (8.38)

.020 (.51)

.030 (.76)

.300 (7.62)

typ.

3° to 9°

.0255 (.65)

typ.

.100 (2.54) typ.

.040 (1.02)

.050 (1.27)

.016 (.41)

.020 (.51)

.240 (6.10)

.260 (6.60)

.780 (19.81)

.800 (20.32)

one

I.D.

.048 (1.22)

.052 (1.32)

.033 (.84)

typ.

.034 (.86)

67 4

10 11 12 13

.014

(.35)

typ.

.010 (.25)

.014 (.35)

.110 (2.79)

.150 (3.81)

.130 (3.30)

.150 (3.81)

.020 (.051) min.

.300 (7.62)

typ.

.031 (0.80)

.035 (0.90)

.100 (2.54) typ.

.039

(1.00)

min.

.018 (0.45)

.022 (0.55)

.248 (6.30)

.256 (6.50)

.335 (8.50)

.343 (8.70)

Pin one I.D.

18° typ.

.300 (7.62)

.347 (8.82)

4°

typ.

.255 (6.48)

.268 (6.81)

.379 (9.63)

.390 (9.91)

.030 (.76)

.045 (1.14)

4°

typ.

.100 (2.54) typ.

10°

typ.

3°–9°

.305 typ.

(7.75) typ.

.018 (.46)

.022 (.56) .008 (.20)

.012 (.30)

.115 (2.92)

.135 (3.43)

Pin one I.D.

.130 (3.30

.150 (3.81)

.030 (.76 )

.040 (1.02)

Emitter

Collector

Emitter

Anode

Cathode

Anode

Emitter

Collector

Emitter

Collector

Emitter

Anode

Cathode

Anode

Cathode

Anode

Collector

Emitter

Anode

Cathode

Dimensions in inches (mm)

Quad Channel

Dual Channel

Single Channel

SINGLE CHANNEL

IL30/31/55

DUAL CHANNEL

ILD30/31/55

QUAD CHANNEL

ILQ30/31/55

PHOTODARLINGTON OPTOCOUPLER

5–2

IL/D/Q30/31/55

Electrical Characteristics

=25

Symbol Min. Typ. Max.. Unit Condition

GaAs Emitter (per channel)

Forward Voltage V

1.25 1.5 V I

=20 mA

Reverse Current I

0.1 10

=3.0 V

Capacitance C

25 pF V

=0 V

Detector (per channel)

Collector-Emitter Breakdown Voltage BV

CEO

30/55 V I

=100

Collector-Emitter Leakage Current I

CEO

1.0 100 nA V

=10 V, I

Collector-Emitter Capacitance C

3.4 pF V

=10 V, f=1 MHz

Package

Current Transfer Ratio

IL/D/Q30/55

IL/D/Q31

CTR 100

200 400

400 %

=10 mA,V

=5 V

=10 mA,V

=5 V

Collector-Emitter Saturation Voltage V

CEsat

0.9 1.0 V I

=50 mA, I

=50 mA

Isolation Test Voltage 5300 VAC

Isolation Resistance R

ISOL

Coupling Capacitance C

ISOL

0.5 pF

Rise Time t

=13.5 V, I

=50 mA,

=100

Ω

Fall Time t

Figure 1. Forward voltage versus forward current

Figure 2. Normalized non-saturated and saturated

CTRce at T

=25

C versus LED current

100101.1

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

IF - Forward Current - mA

VF - Forward Voltage - V

Ta = -55°C

Ta = 25°C

Ta = 85°C

.1 1 10 100 1000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Vce =1V

Vce = 5V

IF - LED Current - mA

NCTRce - Normalized CTR

Vce = 5 V

IF = 10 mA

Ta = 25 °C

Normalized to:

Figure 3. Normalized non-saturated and saturated

collector-emitter current versus LED current

Figure 4. Normalized collector-base photocurrent

versus LED current

100

101.1

.001

.01

Vce = 1V

Vce = 5 V

IF - LED Current - mA

NIce - Normalized Ice

Ta = 25°C

IF = 10 mA

Vce = 5 V

Normalized to:

.1 1 10 100

.001

.01

IF - LED Current - mA

NIcb - Normalized Icb

Ta = 25°C

Vcb = 3.5 V

IF = 10 mA

Normalized to:

5–3

IL/D/Q30/31/55

Figure 8. Switching waveforms

Figure 9. Switching schematic

tStF

tPHL

tPLH

VTH=1.5 V

VCC=13.5 V

F=10 KHz,

DF=50%

IF=50 mA

Figure 5. Hfe current gain versus base current

Figure 6. Low to high propagation delay versus collector

load resistance and LED current

Figure 7. High to low propagation delay versus collector

load resistance and LED current

100101.1.01

2000

4000

6000

8000

10000

12000

Base Current

Hfe-Current Gain

Vce=5V

Vce=1V

Ta=25°C

0 5 10 15 20

80 Ta = 25°C, Vcc = 5

Vth = 1.5 V

220Ω

470Ω

1KΩ

IF - LED Current - mA

tpLH - Low/High Propagation

Delay - µs

100Ω

0 5 10 15 20

100Ω

1KΩ

IF - LED Current - mA

tpHL - High/Low Propagation

delay - µs

Ta = 25°C

Vcc = 5 V

Vth = 1.5