Type 2N2857
Geometry 0011
Polarity NPN
Qual Level: JAN - JANS
Data Sheet No. 2N2857
Generic Part Number:
2N2857
REF: MIL-PRF-19500/343
Features:
Low power, ultra-high frequency
transistor.
Housed in TO-72 case.
Also available in chip form using
the 0011 chip geometry.
The Min and Max limits shown are
per MIL-PRF-19500/343 which
Semicoa meets in all cases.
Rating Symbol Rating Unit
Collector-Emitter Voltage VCEO 15 V
Collector-Base Voltage VCBO 30 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current, Continuous IC40 mA
Operating Junction Temperature TJ-65 to +200 oC
Storage Temperature TSTG -65 to +200 oC
Maximum Ratings
TC = 25oC unless otherwise specified
TO-72
Data Sheet No. 2N2857
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
IC = 1 µA
Collector-Emitter Breakdown Voltage
IC = 3 mA
Emitter-Base Breakdown Voltage
IE = 10 µA
Collector-Emitter Cutoff Current
VCB = 15 V
Collector-Base Cutoff Current
VCB = 15 V ICBO --- 10
ICES --- 100
3.0 ---
---
V(BR)CEO 15 ---
nA
V
Electrical Characteristics
T
C
= 25oC unless otherwise specified
V
V
nA
V(BR)CBO 30
V(BR)EBO
ON Characteristics
Min
Max
Unit
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1 mA
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 1 mA
--- 0.4 V dc
VBE(sat) --- 1.0 V dc
VCE(sat)
Small Signal Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 3 mA, VCE = 1 V hFE 30 150 ---
IC = 2 mA, VCE = 6 V, case lead floating hFE 50 220 ---
Magnitude of Common Emitter Short Circuit
Forward Current Transfer Ratio
VCE = 6 V, IC = 5 mA, f = 100 MHz
Small Signal Power Gain GPE 12.5 21 dB
Collector-Base Feedback Capacitance
VCB = 10 V, IE = 2 mA, 100 kHz < f < 1 MHz
Collector-Base Time Constant
VCE = 6 V, IE = 2 mA, f = 31.9 MHz
Noise Figure
VCE = 6 V, IC = 1.5 mA,rg = 50 ohms, 450 MHz
rb'CC4.0 15 ps
NF --- 4.5 dB
pF
|hFE|10 21 ---
CCB --- 1.0