2N3867
SILICON
PNP TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3867 is a silicon
PNP power transistor designed for high speed switching
and amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 4.0 V
Continuous Collector Current IC 3.0 A
Peak Collector Current ICM 10 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 6.0 W
Power Dissipation (TA=25°C) PD 1.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 29 °C/W
Thermal Resistance JA 175 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=40V, TC=150°C 150 μA
ICEX V
CE=40V, VBE=2.0V 1.0 μA
BVCEO I
C=20mA 40 V
BVEBO I
E=100μA 4.0 V
VCE(SAT) I
C=500mA, IB=50mA 0.5 V
VCE(SAT) I
C=1.5A, IB=150mA 0.75 V
VCE(SAT) I
C=2.5A, IB=250mA 1.3 V
VBE(SAT) I
C=500mA, IB=50mA 1.0 V
VBE(SAT) I
C=1.5A, IB=150mA 0.9 1.4 V
VBE(SAT) I
C=2.5A, IB=250mA 2.0 V
hFE V
CE=1.0V, IC=500mA 50
hFE V
CE=2.0V, IC=1.5A 40 200
hFE V
CE=3.0V, IC=2.5A 25
hFE V
CE=5.0V, IC=3.0A 20
fT V
CE=5.0V, IC=100mA, f=20MHz 60 MHz
Cob V
CB=10V, IE=0, f=100kHz 120 pF
Cib V
EB=3.0V, IC=0, f=100kHz 1000 pF
td V
CC=30V, VBE(off)=0 35 ns
tr I
C=1.5A, IB1=150mA 65 ns
ts V
CC=30V, IC=1.5A 325 ns
tf I
B1=IB2=150mA 75 ns
TO-5 CASE
R0 (8-May 2013)
www.centralsemi.com
2N3867
SILICON
PNP TRANSISTOR
TO-5 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
www.centralsemi.com
R0 (8-May 2013)
