DARLINGTON SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low speed switching applications FEATURES: * Collector-Emitter Sustaining Voltage- Vegorsusy = 40 V (Min) - 2N6336 = 60 V (Min) - 2N6387 = 80 V (Min) - 2N6388 * Collector-Emitter Saturation Voltage Veeieay = 2-0 V (Max.) @ ig = 3.0 A- 2N6386 COLLECTOR NPN 2N6386 2N6387 2N6388 8 AND 10 AMPERE = 2.0 V (Max.) @ |, = 5.0 A - 2N6387, 2N6388 DARLINGTON * DC Current Gain hFE = 2500(Typ) @ I, = 4.0A eMiTTER POE RANSON *C { ta 2N6666, 2N6667, 2NG668 omplementary to : ; 66 40-80 VOLTS MAXIMUM RATINGS 65 WATTS Characteristic Symbol | 2N6386 | 2N6387 | 2N6388 | Unit Collector-Emitter Voltage Vero 40 60 80 Vv COllector-Base Voltage Vero 40 60 80 V yy Emitter-Base Voltage Vepo 5.0 Vv Collector Current-Continuous le 8.0 10 10 A TO-220 -Peak | 15 15 15 cM | B Base Current lp 0.25 A i | 4 1 M EE LEY, o Total Power Dissipation @T,= 25C Pp 65 Ww VY i Derate above 25C 0.52 w/c f |123 | Fir Operating and Storage Junction Ty. Tet - 65 to +150 C D Temperature Range Lb . a ne THERMAL CHARACTERISTICS F en Characteristic Symbol Max Unit PIN 1.BASE 2.COLLECTOR Thermal Resistance Junction to Case Reje 1.92 CAV TL ODLLECTOR{CASE) MILLIMETERS DIM FIGURE -1 POWER DERATING MIN | MAX 80 A 14.68 15.31 70 B 9.78 10.42 E c 5.01 6.52 $ 60 D 13.06 | 14.62 3 50 E 3.57 4.07 2 F 242 | 3.66 & 40 G 1.12 1.36 a H 0.72 | 096 3 30 | 4.22 498 = 20 J 114 | 1.38 9 K 220 | 297 310 L | 033 | 055 * 0 M 2.48 2.98 0 25 50 75 100 125 150 Oo 3.70 3.90 To . TEMPERATURE(C)2N6386, 2N6387,2N6388 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) Veeo(sus) V (1, = 200 mA, I, = 0) 2N6386 40 2N6387 60 2N6388 80 Collector Cutoff Current lcEo mA (Veg = 40 V, I, = 0) 2N6386 1.0 (Veg = 60 V, 1, = 0) 2N6387 1.0 (Veg = 80 V, I, = 0) 2N6388 1.0 Collector Cutoff Current lcex mA (Veg = 40 V, Veciore, = 1.5 V ) 2N6386 0.3 (Veg = 60 V, Vegiorr, = 1-5 V) 2N6387 0.3 ( Veg = 80 V, Vegiorr, = 1-5 V) 2N6388 0.3 (Veg = 40 V, Vegiorr) = 1-5 V, Te = 125C) 2N6386 3.0 (Veg = 60 V, Vegiorr) = 1-5 V, Ty = 125C) 2N6387 3.0 (Vee = 80 V, Vegionr = 1-5 V, T,= 125C) 2N6388 3.0 Emitter Cutoff Current lego mA (Veg = 5.0 V,Ip= 0 ) 5.0 ON CHARACTERISTICS (1) DC Current Gain hFE (I, =3.0A, V.. = 3.0V) 2N6386 1000 20000 (I, = 5.0A, Veg = 3.0 V ) 2N6387, 2N6388 1000 20000 (|, =8.0A, V.. =3.0V) 2N6386 100 (I, = 10A, Vog = 3.0 V) 2N6387, 2N6388 100 Collector-Emitter Saturation Voltage VecE(sat) Vv (I, =3.0A, 1, = 6 mA) 2N6386 2.0 (I, =5.0A, I, = 10 mA) 2N6387, 2N6388 2.0 (1, =8.0A, I, = 80 mA) 2N6386 3.0 (I, = 10A, I, = 100 mA) 2N6387, 2N6388 3.0 Base-Emitter On Voltage VeE{on) Vv (1, =3.0A, Vo. =3.0V) 2N6386 2,8 (I, = 5.0A, Veg = 3.0 V) 2N6387, 2N6388 2.8 (|, =8.0A, VQ. =3.0V) 2N6386 45 (1, = 10A, V,, =3.0V) 2N6387, 2N6388 45 DYNAMIC CHARACTERISTICS Small-Signa! Current Gain Nee (Ig = 1.0 A, Veg = 5.0 V, f = 1.0 KHZ) 1000 Output Capacitance Cop pF (Veg = 10V, 1, =0 , f= 1.0 MHZ) 200 (1) Pulse Test: Pulse width = 300ys , Duty Cycle = 2.0%2N6386, 2N6387, 2N6388 NPN a DC CURRENT GAIN COLLECTOR SATURATION REGION hre , DC CURRENT GAIN Vce , COLLECTOR EMITTER VOLTAGE (VOLTS) 20 02 03 08 o7 10 20 30 50 70 10 "03. 08 O7 10 20 30 50 7.0 10 20 30 lc , COLLECTOR CURRENT (AMP) ls, BASE CURRENT (mA) "ON" VOLTAGES SWITCHING TIME 3.0 25 ao F 20 _ & & w g z a 15 Vese(saty Bloia*250 rE $ Vee#20V Vee@ Voen4.0V loflg=250 10 Veeteat) @ lefa=250 laa = lao Tx28C 05 0.1 02 03 08 1.0 20 3.0 5.0 10 0.1 02 03 05 07 1.0 20 30 50 7.0 10 IC , COLLECTOR CURRENT (AMP) lc , COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) 15 40 There are two limitation on the power handling ability of a transistor:average junction temperature and second = 50 breakdown safe operating area curves indicate Ic-Vce < limits of the transistor that must be observed for reliable & 20 operation i.e., the transistor must not be subjected to & 1.0 greater dissipation than curves indicate. 3 08 The data of SOA curve is base on Typig=150 C;T is o variable depending on conditions. second breakdown re 02 --Bonding Wire Limit pulse limits are valid for duty cycles to 10% provided 3 , Second Breaiciown Limit Tupiys150C, At high case temperatures, thermal limita - 2 a at T.=25C (Singe tion will reduce the power that can be handled to vaiues less than the limitations imposed by second breakdown. 0.03 1.0 2.0 40 60 10 20 80 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS)