PD -95636A IRG4IBC20WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications * 2.5kV, 60s insulation voltage Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability * Industry standard Isolated TO-220 FullpakTM outline Lead-Free C VCES = 600V VCE(on) typ. = 2.16V G @VGE = 15V, IC = 6.5A E n-channel Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-220 FULLPAK Absolute Maximum Ratings VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 600 12 6.0 52 52 20 200 34 14 -55 to + 150 V A V mJ W C 300 (0.063 in. (1.6mm) from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Ambient, typical socket mount Weight Typ. Max. Units --- --- 2.0 (0.07) 3.7 65 --- C/W g (oz) 1 06/11/2010 IRG4IBC20WPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage 18 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.48 -- 2.16 VCE(ON) Collector-to-Emitter Saturation Voltage -- 2.55 -- 2.05 VGE(th) Gate Threshold Voltage 3.0 -- VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -8.8 gfe Forward Transconductance 5.5 8.3 -- -- ICES Zero Gate Voltage Collector Current -- -- -- -- IGES Gate-to-Emitter Leakage Current -- -- V(BR)CES V(BR)ECS Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA 2.6 IC = 6.5A VGE = 15V -- IC = 13A See Fig.2, 5 V -- IC = 6.5A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100 V, IC = 6.5A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 26 38 IC = 6.5A 3.7 5.5 nC VCC = 400V See Fig.8 10 15 VGE = 15V 22 -- 14 -- TJ = 25C ns 110 160 IC = 6.5A, VCC = 480V 64 96 VGE = 15V, RG = 50 0.06 -- Energy losses include "tail" 0.08 -- mJ See Fig. 9, 10, 14 0.14 0.2 21 -- TJ = 150C, 15 -- IC = 6.5A, VCC = 480V ns 150 -- VGE = 15V, RG = 50 150 -- Energy losses include "tail" 0.34 -- mJ See Fig. 10, 11, 14 7.5 -- nH Measured 5mm from package 490 -- VGE = 0V 38 -- pF VCC = 30V See Fig. 7 8.8 -- = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 50, Pulse width 80s; duty factor 0.1%. Repetitive rating; pulse width limited by maximum (See fig. 13a) junction temperature. 2 Pulse width 5.0s, single shot. t = 60s, f = 60Hz www.irf.com IRG4IBC20WPbF 25 For both: Triangular wave: Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified 20 Clamp voltage: 80% of rated Load Current ( A ) Power Dissipation = 13W 15 Square wave: 60% of rated voltage 10 5 Ideal diodes A 0 0.1 1 10 100 1000 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C, Collector-to-Emitter Current (A) 10 TJ = 150 C TJ = 25 C 1 V GE = 15V 20s PULSE WIDTH 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) 100 100 TJ = 150 C 10 TJ = 25 C 1 V CC = 50V 5s PULSE WIDTH 5 6 7 9 10 11 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4IBC20WPbF 3.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 12 8 4 0 25 50 75 100 125 150 TC , Case Temperature ( C) VGE = 15V 80 us PULSE WIDTH IC = 13 A IC = 6.5 A 2.0 IC =3.25 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.01 0.00001 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4IBC20WPbF 1000 600 VGE , Gate-to-Emitter Voltage (V) 800 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Cies 400 Coes 200 Cres 0 1 10 16 12 8 4 0 100 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 10 V CC = 480V V GE = 15V TJ = 25 C I C = 6.5A 0.13 0 10 20 30 40 RG , Gate Resistance (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 5 10 15 20 25 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.14 0.12 0 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.15 VCC = 400V I C = 6.5A 50 50 RG = Ohm VGE = 15V VCC = 480V 1 IC = 13 A IC = 6.5 A IC = 3.25 A 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4IBC20WPbF RG TJ VCC VGE 100 = 50 Ohm = 150 C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 0.8 0.6 0.4 0.2 0.0 0 2 4 6 8 10 12 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 14 VGE = 20V T J = 125 oC 10 1 SAFE OPERATING AREA 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4IBC20WPbF L RL = VCC ICM D.U.T. VC * 50V 1000V c 0 - VCC d 480F * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L Driver* D.U.T. VC Test Circuit 50V 1000V c Fig. 14a - Switching Loss d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5s E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4IBC20WPbF TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220AB Full-Pak Part Marking Information (;$03/( 7+,6,6$1,5),* :,7+$66(0%/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(. 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57180%(5 ,5),* . $66(0%/< /27&2'( '$7(&2'( <($5 :((. /,1(. TO-220AB Full-Pak package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/2010 8 www.irf.com