Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 12
IC @ TC = 100°C Continuous Collector Current 6.0 A
ICM Pulsed Collector Current 52
ILM Clamped Inductive Load Current 52
VGE Gate-to-Emitter Voltage ± 20 V
EARV Reverse Voltage Avalanche Energy 200 mJ
PD @ TC = 25°C Maximum Power Dissipation 34
PD @ TC = 100°C Maximum Power Dissipation 14
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
°C
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
IRG4IBC20WPbF
INSULATED GATE BIPOLAR TRANSISTOR
E
C
G
n-channel
Features
Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• 2.5kV, 60s insulation voltage
Industry-benchmark switching losses improve
efficiency of all power supply topologies
50% reduction of Eoff parameter
Low IGBT conduction losses
Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Industry standard Isolated TO-220 FullpakTM
outline
Lead-Free
Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Benefits
VCES = 600V
VCE(on) typ. = 2.16V
@VGE = 15V, IC = 6.5A
Absolute Maximum Ratings
W
06/11/2010
TO-220 FULLPAK
Parameter Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– 3.7
RθJA Junction-to-Ambient, typical socket mount ––– 65 °C/W
Wt Weight 2.0 (0.07) ––– g (oz)
Thermal Resistance
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PD -95636A
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Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) — 26 38 IC = 6.5A
Qge Gate - Emitter Charge (turn-on) — 3.7 5.5 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 10 15 VGE = 15V
td(on) Turn-On Delay Time — 22 —
trRise Time — 14 — TJ = 25°C
td(off) Turn-Off Delay Time — 110 160 IC = 6.5A, VCC = 480V
tfFall Time — 64 96 VGE = 15V, RG = 50Ω
Eon Turn-On Switching Loss — 0.06 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 0.08 — mJ See Fig. 9, 10, 14
Ets Total Switching Loss — 0.14 0.2
td(on) Turn-On Delay Time — 21 — TJ = 150°C,
trRise Time — 15 — IC = 6.5A, VCC = 480V
td(off) Turn-Off Delay Time — 150 — VGE = 15V, RG = 50Ω
tfFall Time — 150 — Energy losses include "tail"
Ets Total Switching Loss — 0.34 — mJ See Fig. 10, 11, 14
LEInternal Emitter Inductance — 7.5 — nH Measured 5mm from package
Cies Input Capacitance — 490 — VGE = 0V
Coes Output Capacitance — 38 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 8.8 — ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 — — V VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage — 0.48 — V/°C VGE = 0V, IC = 1.0mA
— 2.16 2.6 IC = 6.5A VGE = 15V
VCE(ON) Collector-to-Emitter Saturation Voltage — 2.55 — IC = 13A See Fig.2, 5
— 2.05 — IC = 6.5A , TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage — -8.8 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 5.5 8.3 — S VCE = 100 V, IC = 6.5A
— — 250 VGE = 0V, VCE = 600V
— — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C
— — 1000 VGE = 0V, VCE = 600V, TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
t = 60s, f = 60Hz
IRG4IBC20WPbF
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Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
1 10
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
V = 15V
20µs PULSE WIDTH
GE
T = 25 C
J°
T = 150 C
J°
1
10
100
5 6 7 9 10 11
V , Gate-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
GE
C
V = 50V
5µs PULSE WIDTH
CC
T = 25 C
J°
T = 150 C
J°
0
5
10
15
20
25
0.1 1 10 100 1000
f, Frequency (kHz)
A
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T = 125°C
T = 90°C
Gate drive as specified
sink
J
Triangular wave:
Clamp voltage:
80% of rated
Power Dissipation = 13W
Load Current ( A )
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Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J°
CE
V = 15V
80 us PULSE WIDTH
GE I = A13
C
I = A6.5
C
I = A3.25
C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
4
8
12
T , Case Temperature ( C)
Maximum DC Collector Current(A)
C°
IRG4IBC20WPbF
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Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0 5 10 15 20 25 30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V= 400V
I = 6.5A
CC
C
010 20 30 40 50
0.12
0.13
0.14
0.15
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 6.5A
CC
GE
J
C
°
-60 -40 -20 020 40 60 80 100 120 140 160
0.01
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J°
R = Ohm
V = 15V
V = 480V
G
GE
CC
I = A
13
C
I = A
6.5
C
I = A
3.25
C
Ω
50Ω
1 10 100
0
200
400
600
800
1000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
Cies
Coes
Cres
IRG4IBC20WPbF
6www.irf.com
1
10
100
1 10 100 1000
V = 20V
T = 125 C
GE
Jo
SAFE OPERATING AREA
V , Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
0246810 12 14
0.0
0.2
0.4
0.6
0.8
I , Collector-to-emitter Current (A)
Total Switching Losses (mJ)
C
R = Ohm
T = 150 C
V = 480V
V = 15V
G
J
CC
GE
°
50Ω
IRG4IBC20WPbF
www.irf.com 7
D.U.T.
50V
L
V *
C
cd
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
t=5µs
d(on)
t
t
f
t
r
90%
t
d(off)
10%
90%
10%
5%
V
C
I
C
E
on
E
off
ts on off
E = (E +E )
c
d
e
Fig. 14b - Switching Loss
Waveforms
50V
Driver*
1000V
D.U.T.
I
C
C
V
c
de
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 480V
0 - VCC
RLICM
VCC
=
480µF
IRG4IBC20WPbF
8www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/2010
TO-220AB Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Full-Pak Part Marking Information
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TO-220AB Full-Pak package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
