2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF330 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 400 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 400 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID5.5
3.5 A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 22 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD75 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 300 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
STG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 400 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ= 125oC - - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 5.5 - - A
Gate to Source Leakage Current IGSS VGS = ±20V ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 3.0A, VGS = 10V (Figures 8, 9) - 0.8 1.0 Ω
Forward Transconductance (Note 2) gfs VDS ≥ 10V, ID = 3.3A (Figure 12) 2.9 4.0 - S
Turn-On Delay Time td(ON) VDD = 200V, ID≈ 5.5A, RG = 12Ω, RL = 36Ω,
VGS = 10V (Figures 17, 18) MOSFET Switching
Times are Essentially Independent of Operating
Temperature
-1117ns
Rise Time tr-2029ns
Turn-Off Delay Time td(OFF) -3556ns
Fall Time tf-1524ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 5.5A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating Temperature
-2135nC
Gate to Source Charge Qgs -4-nC
Gate to Drain “Miller” Charge Qgd -17-nC
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 700 - pF
Output Capacitance COSS - 150 - pF
Reverse Transfer Capacitance CRSS -40-pF
Internal Drain Inductance LDMeasured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 5.0 - nH
Internal Source Inductance LSMeasured from the Source
Lead, 6mm (0.25in) from
the Flange and the Source
Bonding Pad
- 12.5 - nH
Thermal Resistance Junction to Case RθJC - - 1.67 oC/W
Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 30 oC/W
LD
LS
D
S
G
IRF330