TPCP8002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) TPCP8002 Notebook PC Applications Portable Equipment Applications * * 0.05 M A 5 8 0.475 1 4 B 0.65 2.90.1 S 0.28 +0.1 -0.11 0.170.02 Absolute Maximum Ratings (Ta = 25C) +0.13 1.12 -0.12 Symbol Rating Unit Drain-source voltage VDSS 20 V Drain-gate voltage (RGS = 20 k) VDGR 20 V Gate-source voltage VGSS 12 V Drain current DC (Note 1) ID 9.1 Pulse (Note 1) IDP 36.4 PD 1.68 Drain power dissipation (t = 5 s) (Note 2a) 0.05 M B A 0.80.05 0.025 S Characteristic 2.80.1 * Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 7 m (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = 10 A (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.2 mA) 2.40.1 * * Unit: mm 0.330.05 A 1.12 +0.13 -0.12 1. Source 2. Source 3. Source 4. Gate JEDEC JEITA TOSHIBA W Drain power dissipation (t = 5 s) (Note 2b) PD 0.84 Single pulse avalanche energy (Note 3) EAS 21.5 mJ Avalanche current IAR 9.1 A Repetitive avalanche energy (Note 4) EAR 0.168 mJ Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C 0.28 +0.1 -0.11 5. Drain 6. Drain 7. Drain 8. Drain 2-3V1K Weight: 0.017 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, Marking (Note 5) 8 7 6 5 etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and 8002 estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2 3 4 Lot No. 1 2009-05-11 TPCP8002 Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 74.4 C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 148.8 C/W Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8t Unit: (mm) FR-4 25.4 x 25.4 x 0.8t Unit: (mm) (b) (a) (b) Note 3: VDD = 16 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = 9.1 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: on the lower left of the marking indicates Pin 1. Weekly code (3 digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2009-05-11 TPCP8002 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = 10 V, VDS = 0 V 10 A Drain cut-off current IDSS VDS = 20 V, VGS = 0 V 10 A V (BR) DSS ID = 10 mA, VGS = 0 V 20 V (BR) DSX ID = 10 mA, VGS = -12 V 8 Vth VDS = 10 V, ID = 0.2 mA 0.5 1.2 VGS = 2.5 V, ID = 4.5 A 10 13.7 VGS = 4.5 V, ID = 4.5 A 7 10 VDS = 10 V, ID = 4.5 A 18 36 3700 400 450 14 24 Gate threshold voltage Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr VGS Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) 0V ton 4.7 Turn-on time ID = 4.5 A VOUT 5V RL = 2.22 Drain-source breakdown voltage tf toff VDD 10 V Duty 1 %, tw = 10 s Qg Gate-source charge 1 Qgs1 Gate-drain ("Miller") charge Qgd VDD 16 V, VGS = 5 V, ID = 9.1 A V V m S pF ns 30 110 48 8 12 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP 36.4 A -1.2 V VDSF IDR = 9.1 A, VGS = 0 V 3 2009-05-11 TPCP8002 ID - VDS 2 1.8 ID - VDS 20 Common source Ta = 25C Pulse test 1.7 ID (A) 8 6 Drain current Drain current ID (A) 10 1.6 4 1.5 2 3 2 Common source Ta = 25C Pulse test 1.9 16 1.8 12 1.7 8 1.6 4 1.5 VGS = 1.4 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 0 1.0 VGS = 1.4 V 0 (V) 0.4 0.8 VDS (V) Drain-source voltage (A) ID Drain current 100C 8 4 25C Ta = -55C 0 0.4 0.8 1.2 1.6 Gate-source voltage VGS 2 Common source Ta = 25C Pulse test 0.8 0.6 0.4 ID = 9.1 A 0.2 4.5 2.3 0 2.4 0 (V) 2 4 Forward transfer admittance Drain-source ON-resistance RDS (ON) (m) 25C |Yfs| (S) Ta = -55C 100C 10 1 0.1 1 Drain current 10 ID 8 VGS 10 (V) RDS (ON) - ID 100 Common source VDS = 10 V Pulse test 6 Gate-source voltage |Yfs| - ID 100 (V) VDS - VGS 12 0 VDS 1 Common source VDS = 10 V Pulse test 16 2 1.6 Drain-source voltage ID - VGS 20 1.2 (A) VGS = 2.5 V 10 4.5 1 0.1 100 Common source Ta = 25C Pulse test 1 Drain current 4 10 ID 100 (A) 2009-05-11 TPCP8002 RDS (ON) - Ta IDR - VDS 20 100 Common source 16 IDR ID = 2.3,4.5,9.1 A 12 2.5 V 8 ID = 2.3,4.5,9.1 A VGS = 4.5 V 4 0 -80 Ta = 25C (A) Pulse test Drain reverse current -40 0 40 Ambient temperature 80 120 Ta Pulse test 5 VGS = -1 V 1 1 0.1 160 3 10 0 0 -0.2 -0.4 C - VDS -1 VDS (V) 80 120 -1.2 Vth - Ta Vth (V) 1.2 C Gate threshold voltage (pF) Ciss 1000 Coss Crss 1.0 0.8 0.6 0.4 0.2 0.0 -80 10 Drain-source voltage (W) PD 1.6 20 Drain-source voltage 1.2 (2) 0.8 0.4 50 100 Ambient temperature (C) 150 Ta 200 Common source Ta = 25C 5 8 Pulse test 8V 12 6 4V 8 VDD = 16 V 4 VGS 2 4 0 20 Total gate charge (C) 10 ID = 9.1 A VDS 16 0 0 0 Ta 160 Dynamic input/output characteristics (1) Device mounted on a glass-epoxy board (a)(Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t=5s (1) 40 (V) PD - Ta 2.0 0 Ambient temperature 100 VDS -40 (V) 1 Common source VDS = 10 V ID = 0.2mA Pulse test 0 60 40 Qg VGS 100 0.1 Common source VGS = 0 V f = 1 MHz Ta = 25C VDS (V) Capacitance -0.8 Drain-source voltage (C) 10000 Drain power dissipation -0.6 Gate-source voltage Drain-source ON-resistance RDS (ON) (m) Common source (nC) 2009-05-11 TPCP8002 rth(j-c) - tw (C/W) 1000 Device mounted on a glassepoxy board (b) (Note 2b) rth 100 Transient thermal impedance Device mounted on a glassepoxy board (a) (Note 2a) 10 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area 100 ID max (pulse)* Drain current ID (A) 1 ms* 10 10 ms* 1 0.1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 1 Drain-source voltage VDSS max 10 VDS 100 (V) 6 2009-05-11 TPCP8002 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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