ZM-PTZ3.6B ~ ZM-PTZ36B SILICON EPITAXIAL PLANAR ZENER DIODES LL-41 Features 1) Small surface mounting type 2) 1W of power can be obtained despite compact size 3) High surge withstand level Applications 1) Voltage regulation and voltage limiting 2) Voltage surge absorption Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Power Dissipation 1) Ptot 1 W Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C 1) Mounting density of other power components should be taken into consideration when laying out the pattern. SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 05/11/2003 ZM-PTZ3.6B ~ ZM-PTZ36B TYPE Min. Zener Voltage Range Operating Resistance Reverse current Vz (V) Zz () IR (uA) Max. IZ (mA) Max. IZ (mA) Max. VR (V) ZM-PTZ3.6B 3.6 4 40 15 40 20 1 ZM-PTZ3.9B 3.9 4.4 40 15 40 20 1 ZM-PTZ4.3B 4.3 4.8 40 15 40 20 1 ZM-PTZ4.7B 4.7 5.2 40 10 40 20 1 ZM-PTZ5.1B 5.1 5.7 40 8 40 20 1 ZM-PTZ5.6B 5.6 6.3 40 8 40 20 1.5 ZM-PTZ6.2B 6.2 7 40 6 40 20 3 ZM-PTZ6.8B 6.8 7.7 40 6 40 20 3.5 ZM-PTZ7.5B 7.5 8.4 40 4 40 20 4 ZM-PTZ8.2B 8.2 9.3 40 4 40 20 5 ZM-PTZ9.1B 9.1 10.2 40 6 40 20 6 ZM-PTZ10B 10 11.2 40 6 40 10 7 ZM-PTZ11B 11 12.3 20 8 20 10 8 ZM-PTZ12B 12 13.5 20 8 20 10 9 ZM-PTZ13B 13.3 15 20 10 20 10 10 ZM-PTZ15B 14.7 16.5 20 10 20 10 11 ZM-PTZ16B 16.2 18.3 20 12 20 10 12 ZM-PTZ18B 18 20.3 20 12 20 10 13 ZM-PTZ20B 20 22.4 20 14 20 10 15 ZM-PTZ22B 22 24.5 10 14 10 10 17 ZM-PTZ24B 24 27.6 10 16 10 10 19 ZM-PTZ27B 27 30.8 10 16 10 10 21 ZM-PTZ30B 30 34 10 18 10 10 23 ZM-PTZ33B 33 37 10 18 10 10 25 ZM-PTZ36B 36 40 10 20 10 10 27 1) The Zener voltage is measured 40ms after power is supplied. 2) The operating resistances (ZZ, ZZK) are measured by superimposing a minute alternating current on the regulated current (Iz). SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 05/11/2003 ZM-PTZ3.6B ~ ZM-PTZ36B Derating curve Rise in surface temperature 200 Rise in diode a surface temperature( C) Power dissipation(mW) Ceramic substrate 82x30x1.0(mm) 800 400 Individual part (not mounted) 200 ALUMINA SUBSTRATE 114X124X1.6(mm) Glass epoxy substrate 32x30x1.6(mm) Rise in diode a surface temperature( C) 1200 Rise in surface temperature 1.5W 100 1W 1.5W 1W 100 0.5W 0.5W 0 0 0 50 87.5 100 200 150 5.6 6.2 6.8 7.5 8.2 9.1 10 12 11 3.9 10m Zener current, (A) Iz=40mA 0 -0.04 100 Mounting quantity(pcs/substrate) Zener voltage characteristics Iz=20mA 0.04 10 1 100m 4.3 4.7 5.1 0.08 100 Mounting quantity(pcs/substrate) Zener voltage - temp. coefficient characteristics 0.10 10 1 Ta ( C) Temperature coefficient ( %/ C) GLASS EPOXY SUBSTRATE 144X220X1.6(mm) 15 16 20 18 24 22 30 27 36 33 13 3.6 1m 100 10 125-25 C -0.08 1 0 10 20 30 Zener voltage (V) 40 0 5 10 15 20 25 30 35 Zener voltage (V) SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.) (R) Dated : 05/11/2003 40