ZM-PTZ3.6B ~ ZM-PTZ36B
SILICON EPITAXIAL PLANAR ZENER DIODES LL-41
Features
1) Small surface mounting type
2) 1W of power can be obtained despite compact size
3) High surge withstand level
Applications
1) Voltage regulation and voltage limiting
2) Voltage surge absorption
Absolute Maximum Ratings (Ta = 25oC)
Symbol Value Unit
Power Dissipation
1) P
tot 1 W
Junction Temperature Tj 150
OC
Storage Temperature Range TS -55 to +150 OC
1) Mounting density of other power components should be taken into consideration when laying out the pattern.
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
ZM-PTZ3.6B ~ ZM-PTZ36B
Zener Voltage Range Operating Resistance Reverse current
Vz (V) Zz (Ω) IR (uA)
TYPE
Min. Max.
IZ
(mA) Max. IZ
(mA) Max. VR
(V)
ZM-PTZ3.6B 3.6 4 40 15 40 20 1
ZM-PTZ3.9B 3.9 4.4 40 15 40 20 1
ZM-PTZ4.3B 4.3 4.8 40 15 40 20 1
ZM-PTZ4.7B 4.7 5.2 40 10 40 20 1
ZM-PTZ5.1B 5.1 5.7 40 8 40 20 1
ZM-PTZ5.6B 5.6 6.3 40 8 40 20 1.5
ZM-PTZ6.2B 6.2 7 40 6 40 20 3
ZM-PTZ6.8B 6.8 7.7 40 6 40 20 3.5
ZM-PTZ7.5B 7.5 8.4 40 4 40 20 4
ZM-PTZ8.2B 8.2 9.3 40 4 40 20 5
ZM-PTZ9.1B 9.1 10.2 40 6 40 20 6
ZM-PTZ10B 10 11.2 40 6 40 10 7
ZM-PTZ11B 11 12.3 20 8 20 10 8
ZM-PTZ12B 12 13.5 20 8 20 10 9
ZM-PTZ13B 13.3 15 20 10 20 10 10
ZM-PTZ15B 14.7 16.5 20 10 20 10 11
ZM-PTZ16B 16.2 18.3 20 12 20 10 12
ZM-PTZ18B 18 20.3 20 12 20 10 13
ZM-PTZ20B 20 22.4 20 14 20 10 15
ZM-PTZ22B 22 24.5 10 14 10 10 17
ZM-PTZ24B 24 27.6 10 16 10 10 19
ZM-PTZ27B 27 30.8 10 16 10 10 21
ZM-PTZ30B 30 34 10 18 10 10 23
ZM-PTZ33B 33 37 10 18 10 10 25
ZM-PTZ36B 36 40 10 20 10 10 27
1) The Zener voltage is measured 40ms after power is supplied.
2) The operating resistances (ZZ, ZZK) are measured by superimposing a minute alternating current on the regulated
current (Iz).
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
ZM-PTZ3.6B ~ ZM-PTZ36B
16
Zener voltage (V)
Zener voltage characteristics
10
Temperature coefficient ( %/ C)
20
Zener voltage (V)
10
0
-0.08
4030
125-25 C
5
0
1
10 15
0.04
0
-0.04
Zener voltage - temp.
coefficient characteristics
0.08
0.10
Iz=20mA
Iz=40mA
Zener current, (A)
100
1m
4.7
4.3 5.1
3.9
3.6
10m
100m
5.6
15
12
11
13
6.2 6.8 8.2
7.5 10
9.1
20 25 30 35 40
18
20
22 24 27 30 33 36
1200
800
400
Power dissipation(mW)
Rise in diode a surface
temperature
( C)
Rise in diode a surface
temperature
( C)
Ta (C)
050 87.5 100 200
150
0
Individual part
(not mounted)
100
0.5W
Mounting quantity(pcs/substrate)
110 100
0
1
1W
100
Derating curve
Ceramic substrate
82x30x1.0(mm)
Glass epoxy substrate
32x30x1.6(mm)
200
Rise in surface temperature
1.5W
ALUMINA SUBSTRATE
114X124X1.6(mm)
200
GLASS EPOXY SUBSTRATE
144X220X1.6(mm)
Mounting quantity(pcs/substrate)
10 100
0.5W
Rise in surface temperature
1.5W 1W
SEMTECH ELECTRONICS LTD. ( Wholly owned subsidiary of Honey Technology Ltd.)
®
Dated : 05/11/2003
