BSX45, -10, -16 BSX46, -10, -16 BSX47, -10 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BSX45 series types are silicon NPN epitaxial transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation (TC=25C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IBM PD PD TJ, Tstg JC JA BSX45 80 40 BSX46 100 60 7.0 1.0 1.5 200 6.25 0.8 -65 to +200 28 219 ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) BSX45 BSX46 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=60V 30 30 ICBO VCB=60V, TA=150C 10 10 ICBO VCB=80V ICBO VCB=80V, TA=150C IEBO VEB=5.0V 10 10 VCE(SAT) IC=1.0A, IB=100mA 1.0 1.0 VCE(SAT) IC=500mA, IB=25mA VBE(ON) VCE=1.0V, IC=100mA 1.0 1.0 VBE(ON) VCE=1.0V, IC=500mA 0.75 1.5 0.75 1.5 VBE(ON) VCE=1.0V, IC=1.0A 2.0 2.0 fT VCE=10V, IC=50mA, f=100MHz 50 50 Cc VCB=10V, IE=0, f=1.0MHz 25 20 Ce VEB=0.5V, IC=0, f=1.0MHz 80 80 ton IC=100mA, IB1=IB2=5.0mA 200 200 toff IC=100mA, IB1=IB2=5.0mA 850 850 NF VCE=5.0V, IC=100A, RS=1.0k f=1.0kHz, BW=200Hz 3.5 TYP 3.5 TYP BSX47 120 80 BSX47 MIN MAX 30 10 10 0.9 1.0 0.75 50 - 1.5 2.0 15 80 200 850 3.5 TYP UNITS V V V A A mA W W C C/W C/W UNITS nA A nA A nA V V V V V MHz pF pF ns ns dB R1 (24-October 2013) BSX45, -10, -16 BSX46, -10, -16 BSX47, -10 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25C unless otherwise noted) BSX45-10 BSX46-10 BSX45-16 BSX47-10 BSX46-16 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX hFE VCE=1.0V, IC=100A 15 25 hFE VCE=1.0V, IC=100mA 63 160 100 250 hFE VCE=1.0V, IC=500mA 25 35 hFE VCE=1.0V, IC=1.0A 20 30 - TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (24-October 2013 w w w. c e n t r a l s e m i . c o m