TIP117BG - ON Semiconductor L.L.C.

3–895

Motorola Bipolar Power Transistor Device Data

Plastic Medium-Power

Complementary Silicon Transistors

. . . designed for general–purpose amplifier and low–speed switching applications.

•High DC Current Gain —

hFE = 2500 (Typ) @ IC = 1.0 Adc

•Collector–Emitter Sustaining Voltage — @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115

VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116

VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc

•Monolithic Construction with Built–in Base–Emitter Shunt Resistors

•TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Symbol

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

TIP110,

TIP115

ÎÎÎ

TIP111,

TIP116

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

TIP112,

TIP117

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

2.0

4.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

0.4

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

2.0

0.016

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Unclamped Inductive Load Energy —

Figure 13

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristics

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

2.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

00 20 40 60 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

140

2.0

1.0

3.0

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

TIP110

TIP111

TIP112

TIP115

TIP116

TIP117

DARLINGTON

2 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60–80–100 VOLTS

50 WATTS

*Motorola Preferred Device

NPN

PNP *

CASE 221A–06

TO–220AB

REV 1

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

3–896 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0) TIP110, TIP115

TIP111, TIP116

TIP112, TIP117

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

100

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP110, TIP115

(VCE = 40 Vdc, IB = 0) TIP111, TIP116

(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ICEO

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) TIP110, TIP115

(VCB = 80 Vdc, IE = 0) TIP111, TIP116

(VCB = 100 Vdc, IE = 0) TIP112, TIP117

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

ICBO

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

IEBO

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 2.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

hFE

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

1000

500

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation V oltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 2.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117

TIP110, TIP111, TIP112

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

Cob

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎ

ÎÎÎÎ

200

100

ÎÎÎ

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

Figure 2. Switching Times Test Circuit

4.0

0.04

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)µ

2.0

1.0

0.8

0.2 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0

0.6

PNP

NPN

td @ VBE(off) = 0

approx

+8.0 V

approx

–12 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 µs

51 D1

+4.0 V

VCC

–30 V

TUT

≈ 8.0 k ≈ 60

SCOPE

for td and tr, D1 is disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

RB & RC V ARIED T O OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

VCC = 30 V

IC/IB = 250

0.4

IB1 = IB2

TJ = 25°C

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

3–897

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZθJC(t) = r(t) RθJC

RθJC = 2.5°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) ZθJC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

1.0

Figure 5. TIP115, 116, 117

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

4.0

2.0

1.0

0.1 10 60 80 100

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

OLLE

URREN

(AMPS

)

TJ = 150°Cdc

1ms

TIP115

TIP116

TIP117

SECONDAR Y BREAKDOWN LIMITED

5ms

CURVES APPLY BELOW

RATED VCEO

1.0

Figure 6. TIP110, 111, 112

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

4.0

2.0

1.0

0.1 10 80 100

IC, COLLECTOR CURRENT (AMPS)

TIP110

TIP111

TIP112

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

TJ = 150°C

SECONDAR Y BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

ACTIVE–REGION SAFE–OPERATING AREA

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figures 5 and 6 is based on TJ(pk) = 150

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided T J(pk)

< 150

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

200

0.04 VR, REVERSE VOLTAGE (VOLTS)

10 0.4 0.6 1.0 2.0 404.00.06 0.1 0.2

APA

E (p

TC = 25°C

Cib

50 Cob

PNP

NPN

Figure 7. Capacitance

100

6.0 10 20

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

3–898 Motorola Bipolar Power Transistor Device Data

VCE, COLLECT OR–EMITTER VOLT AGE (VOLTS)

6.0 k

0.04

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

URREN

GAIN

1.0 k

2.0 k

VCE = 3.0 V

0.4

NPN

TIP110, 111, 112 PNP

TIP115, 116, 117

Figure 9. Collector Saturation Region

3.4

0.1 IB, BASE CURRENT (mA)

0.6 0.2 1.0 2.0 20 100

1.8

IC =

0.5 A

TJ = 25°C

1.0 A

2.6

3.0

0.5 5.0

2.2

0.04

IC, COLLECTOR CURRENT (AMP)

0.06 0.1 0.2 0.6 1.0 2.0 4.0

1.8

1.4

1.0

0.6

0.2

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VBE @ VCE = 3.0 V

4.0 k

3.0 k

TJ = 125°C

25°C

–55°C

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 3.0 V

TJ = 125°C

25°C

–55°C

1.4

2.0 A

IB, BASE CURRENT (mA)

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

TJ = 25°C

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

2.0

0.4

6.0 k

0.04

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

1.0 k

2.0 k

0.4

4.0 k

3.0 k

2.0

2.2

1.0

4.0 A

3.4

0.1

0.6 0.2 1.0 2.0 20 10

1.8

2.6

3.0

0.5 5.0 50

1.4

2.2

1.0

IC =

0.5 A 1.0 A 2.0 A 4.0 A

2.2

0.04 0.06 0.1 0.2 0.6 1.0 2.0 4.0

1.8

1.4

1.0

0.6

0.2 0.4

TIP110 TIP111 TIP112 TIP115 TIP116 TIP117

3–899

Motorola Bipolar Power Transistor Device Data

Figure 11. Temperature Coefficients

NPN

TIP110, 111, 112 PNP

TIP115, 116, 117

Figure 12. Collector Cut-Off Region

IC, COLLECTOR CURRENT (AMP)

+0.8

V, TEMPERA TURE COEFFICIENTS (mV/ C)°θ

–0.8

–1.6

–2.4

–3.2

–4.0

–4.8

*APPLIES FOR IC/IB ≤ hFE/3

*θVC for VCE(sat)

θVC for VBE

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

25°C to 150°C

–55°C to 25°C

0.1

25°C to 150°C

–55°C to 25°C

IC, COLLECTOR CURRENT (AMP)

+0.8

V, TEMPERA TURE COEFFICIENTS (mV/ C)°θ

–0.8

–1.6

–2.4

–3.2

–4.0

–4.8

*APPLIES FOR IC/IB ≤ hFE/3

*θVC for VCE(sat)

θVC for VBE

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

25°C to 150°C

–55°C to 25°C

0.1

25°C to 150°C

–55°C to 25°C

105

–0.6

103

102

100

104

101

10–1

VBE, BASE-EMITTER VOLTAGE (VOLTS)

–0.4 –0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

+1.4

OLLE

URREN

)

µIC

105

–0.6

103

102

100

104

101

10–1

VBE, BASE-EMITTER VOLTAGE (VOLTS)

–0.4 –0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VCE = 30 V

TJ = 150°C

100°C

25°C

REVERSE FORWARD

+1.4

, COLLECTOR CURRENT ( A)µIC

Figure 13. Inductive Load Switching

Note A: Input pulse width is increased until ICM = 0.71 A,

NPN test shown; for PNP test

reverse all polarity and use MJE224 driver.

0.71 A

0 V

–5 V

tw ≈ 3.5 ms (SEE NOTE A)

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

VCER

0 V

20 V

100 ms

VCE(sat)

INPUT MJE254

50 Ω50 Ω

RBB1

2kΩ

RBB2

100 Ω

VBB2 = 0

TUT

VCE MONITOR

100 mH

VCC = 20 VIC

MONITOR

RS =

0.1 Ω

TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS

–

VBB1 = 10 V +

–

2–3

Selector Guide

Motorola Bipolar Power Transistor Device Data

Table 1. Plastic (Isolated TO–220 Type)

Device Type Resistive Switching

ICCont

Amps

Max

VCEO(sus)

Volts

Min

VCES

Volts

Min NPN PNP hFE

Min/Max @ IC

Amp

µs

Max

µs

Max @ IC

Amp

MHz

Min

PD (Case)

Watts

@ 25°C

1 250

MJF47

30/150 0.3 2 typ 0.17 typ 0.3 10 28

2 400 700

BUL44F

14/34 0.2 2.75(3) 0.2(3) 1 13 typ 25

1000

MJF18002

14/34 0.2 2.75(3) 0.175(3) 1 13 typ 25

3 100

MJF31C MJF32C

10 min 1 0.6 0.3 1 3 28

5100

MJF122

(2)

MJF127

(2) 2000 min 3 1.5 typ 1.5 typ 3 4(1) 28

400 700

BUL45F

14/34 0.3 1.7(3) 0.15(3) 1 12 typ 35

450 1000

BUT11AF

10 min .005 4 0.8 2.5 40

1000

MJF18004

14/34 0.3 1.7(3) 0.15(3) 1 13 typ 35

550 1200

MJF18204

18/35 0.5 2.75(3) 0.2(3) 2 12 35

6 400 700

BUL146F

14/34 0.5 2.5(3) 0.15(3) 3 14 typ 40

450 1000

MJF18006

14/34 0.5 3.2(3) 0.15(3) 3 14 typ 40

880

MJF6107

30/90 2 0.5 typ 0.13 typ 2 4 35

150

MJF15030 MJF15031

40 min 3 1 typ 0.15 typ 3 30 35

400 700

MJF13007

5/30 5 3 0.7 5 4 40

BUL147F

14/34 1 2.5(3) 0.18(3) 2 14 typ 45

450 1000

MJF18008

16/34 1 2.75(3) 0.18(3) 2 13 typ 45

10 60

MJF3055 MJF2955

20/100 4 — — — 2 40

MJF44H11 MJF45H11

40/100 4 0.5 typ 0.14 typ 5 40 35

100

MJF6388

(2)

MJF6668

(2) 3k/20k 3 1.5 typ 1.5 typ 20(1) 40

450 1000

MJF18009

14/34 1.5 2.75(3) 0.2(3) 3 12 50

12 400 700

MJF13009

6/30 8 3 0.7 8 8 40

(1)|hFE| @ 1 MHz

(2)Darlington

(3)Switching tests performed w/special application simulator circuit. See data sheet for details.

Devices listed in bold, italic are Motorola preferred devices.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

CASE 221D

Isolated TO–220 Type

UL Recognized

File #E69369

Selector Guide

2–4 Motorola Bipolar Power Transistor Device Data

Table 2. Plastic TO–220AB

Device Type Resistive Switching

ICCont

Amps

Max

VCEO(sus)

Volts

Min(8) NPN PNP hFE

Min/Max @ IC

Amp

µs

Max

µs

Max @ IC

Amp

MHz

Min

(Case)

Watts

@ 25°C

0.5 350 MJE2360T 15 min 0.1 10 typ 30

MJE2361T

40 min 0.1 10 typ 30

1 100 TIP29C TIP30C 15/75 1 0.6 typ 0.3 typ 1 3 30

250 TIP47 30/150 0.3 2 typ 0.18 typ 0.3 10 40

300 TIP48 MJE5730 30/150 0.3 2 typ 0.18 typ 0.3 10 40

350

TIP49 MJE5731

30/150 0.3 2 typ 0.18 typ 0.3 10 40

400

TIP50 MJE5731A

(7) 30/150 0.3 2 typ 0.18 typ 0.3 10 40

2 100

TIP112

(2)

TIP117

(2) 500 min 2 1.7 typ 1.3 typ 2 25(1) 50

400/700

BUL44

14/36 0.4 2.75(3) 0.175(3) 1 13 typ 50

450/1000

BUX85

30 0.1 3.5 1.4 1 4 50

450/1000

MJE18002

14/34 0.2 3(3) 0.17(3) 1 12 typ 40

900/1800

MJE1320

3 min 1 4 typ 0.8 typ 1 80

3 80 BD241B BD242B 25 min 1 3 40

100 BD241C BD242C 25 min 1 3 40

TIP31C TIP32C

25 min 1 0.6 typ 0.3 typ 1 3 40

150

MJE9780

50/200 0.5 5 typ 40

(1)|hFE| @ 1 MHz

(2)Darlington

(3)Switching tests performed w/special application simulator circuit. See data sheet for details.

(7)VCEO = 375 V

(8)When 2 voltages are given, the format is VCEO(sus)/VCES.

Devices listed in bold, italic are Motorola preferred devices.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A–06

(TO–220AB)

123

2–5

Selector Guide

Motorola Bipolar Power Transistor Device Data

Table 2. Plastic TO–220AB (continued)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

Resistive Switching

@ IC

Amp

hFE

Min/Max

Device Type

VCEO(sus)

Volts

Min(8)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

@ IC

Amp

µs

Max

µs

Max

@ IC

Amp

hFE

Min/Max

PNPNPN

VCEO(sus)

Volts

Min(8)

4 40

MJE1123

45/100 4 5 75

MJE800

(2)

MJE700

(2) 750 min 1.5 1(1) 40

D44C12 D45C12

40/120 0.2 1 40 typ 30

400/700

MJE13005

6/30 3 3 0.7 3 4 60

5 100

TIP122

(2)

TIP127

(2) 1k min 3 1.5 typ 1.5 typ 4 4(1) 75

250 2N6497 10/75 2.5 1.8 0.8 2.5 5 80

300

2N6498

10/75 2.5 1.8 0.8 2.5 5 80

400/700

BUL45

14/34 0.3 1.7(3) 0.15(3) 1 12 typ 75

450/1000 MJE16002 5 min 5 3 0.3 3 80

450/850

MJE16004

7 min 5 2.7 0.35 3 80

450/1000

MJE18004

14/34 0.3 1.7 0.15 1.0 13 75

550/1200

MJE18204

18/35 0.5 2.75(3) 0.2(3) 2 12 75

6 80

BD243B BD244B

15 min 3 0.4 typ 0.15 typ 3 3 65

100

BD243C BD244C

15 min 30.4 typ 0.15 typ 3 3 65

TIP41C TIP42C

15/75 3 0.4 typ 0.15 typ 3 3 65

250/550

MJE16204

5 min 6 1.5(2) 0.15(2) 1 10 80

400/700

BUL146

14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100

450/1000

MJE18006

14/34 0.5 3.2(3) 0.13(3) 3 14 typ 100

730 2N6288 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40

50 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40

2N6292 2N6107

30/150 2 0.4 typ 0.15 typ 3 4 40

100

BD801 BD802

15 min 3 3 65

150 BU407 30 min 1.5 0.75 5 10 60

200

BU406

30 min 1.5 0.75 5 10 60

450

BU522B

(2) 250 min 2.5 7.5 75

(1)|hFE| @ 1 MHz

(2)Darlington

(3)Switching tests performed w/special application simulator circuit. See data sheet for details.

(7)VCEO = 375 V

(8)When 2 voltages are given, the format is VCEO(sus)/VCES.

Devices listed in bold, italic are Motorola preferred devices.

Selector Guide

2–6 Motorola Bipolar Power Transistor Device Data

Table 2. Plastic TO–220AB (continued)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

Resistive Switching

@ IC

Amp

hFE

Min/Max

Device Type

VCEO(sus)

Volts

Min(8)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

@ IC

Amp

µs

Max

µs

Max

@ IC

Amp

hFE

Min/Max

PNPNPN

VCEO(sus)

Volts

Min(8)

8 60 2N6043(2) 2N6040(2) 1k/10k 4 1.5 typ 1.5 typ 3 4(1) 75

2N6044

(2)

2N6041

(2) 1k/10k 4 1.5 typ 1.5 typ 3 4(1) 75

BDX53B

(2)

BDX54B

(2) 750 min 3 4(1) 60

100

2N6045

(2)

2N6042

(2) 1k/10k 3 1.5 typ 1.5 typ 3 4(1) 75

BDX53C

(2)

BDX54C

(2) 750 min 3

TIP102

(2)

TIP107

(2) 1k/20k 3 1.5 typ 1.5 typ 3 4(1) 80

120 MJE15028 MJE15029 20 min 4 30 50

150

MJE15030 MJE15031

20 min 4 30 50

200

BU806

(2) 100 min 5 0.55 typ 0.2 typ 5 60

300/600 MJE5740(2) 200 min 4 8 typ 2 typ 6 4 80

MJE5850 15 min 2 2 0.5 4 80

350

MJE5741

(2) 200 min 4 8 typ 2 typ 6 80

MJE5851

15 min 2 2 0.5 4 80

MJE5742

(2) 200 min 4 8 typ 2 typ 6 80

MJE13007

5/30 5 3 0.7 5 80

MJE5852

15 min 2 2 0.5 4 80

400/650

MJE16106

6/22 8 2 typ 0.1 typ 5 100

400/700

BUL147

14/34 1 2.5(3) 0.18(3) 2 14 typ 125

450/1000

MJE18008

16/34 1 2.75(3) 0.18(3) 2 13 typ 125

10 20

BD808

15 min 4 1.5 90

60 D44H8 D45H8 40 min 4 50

MJE3055T MJE2955T

20/70 4 75

2N6387

(2)

2N6667

(2) 1k/20k 5 20(1) 65

BDX33B

(2)

BDX34B

(2) 750 min 3 3 70

BD809 BD810

15 min 4 1.5 90

2N6388

(2)

2N6668

(2) 1k/20k 5 20(1) 65

D44H10 D45H10 20 min 4 0.5 typ 0.14 typ 5 50 typ 50

D44H11 D45H11

40 min 4 0.5 typ 0.14 typ 5 50 typ 50

(1)|hFE| @ 1 MHz

(2)Darlington

(3)Switching tests performed w/special application simulator circuit. See data sheet for details.

(7)VCEO = 375 V

(8)When 2 voltages are given, the format is VCEO(sus)/VCES.

(9)Self protected Darlington

Devices listed in bold, italic are Motorola preferred devices.

2–7

Selector Guide

Motorola Bipolar Power Transistor Device Data

Table 2. Plastic TO–220AB (continued)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

Resistive Switching

@ IC

Amp

hFE

Min/Max

Device Type

VCEO(sus)

Volts

Min(8)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

@ IC

Amp

µs

Max

µs

Max

@ IC

Amp

hFE

Min/Max

PNPNPN

VCEO(sus)

Volts

Min(8)

10 100

BDX33C

(2)

BDX34C

(2) 750 min 3 3 70

450/1000

MJE18009

14/34 1.5 2.75(3) 0.2(3) 3 12 150

12 400/700

MJE13009

6/30 8 3 0.7 8 4 100

15 80

2N6488 2N6491

20/150 5 0.6 typ 0.3 typ 5 5 75

D44VH10 D45VH10

20 min 4 0.5 0.09 8 50 typ 83

100

BDW42

(2)

BDW47

(2) 1k min 5 1 typ 1.5 typ 5 4 85

Table 3. Plastic TO–218 Type

Device Type Resistive Switching

ICCont

Amps

Max

VCEO(sus)

Volts

Min(8) NPN PNP hFE

Min/Max @ IC

Amp

µs

Max

µs

Max @ IC

Amp

MHz

Min

(Case)

Watts

@ 25°C

8 500/1000

MJH16006A

5 min 8 2.5 0.25 5 125

10 60 TIP140(2) TIP145(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125

TIP141(2) TIP146(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125

100

BDV65B

(2)

BDV64B

(2) 1k min 5 125

TIP33C TIP34C 20/100 3 3 80

TIP142

(2)

TIP147

(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125

400

BU323AP

(2) 150/100 6 15 15 6 125

MJH10012

(2) 100/2k 6 15 15 6 118

(1)|hFE| @ 1 MHz

(2)Darlington

(8)When 2 voltages are given, the format is VCEO(sus)/VCES.

Devices listed in bold, italic are Motorola preferred devices.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 340D

(TO–218 Type,

SOT–93)

Selector Guide

2–8 Motorola Bipolar Power Transistor Device Data

Table 3. Plastic TO–218 Type (continued)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

Resistive Switching

@ IC

Amp

hFE

Min/Max

Device Type

VCEO(sus)

Volts

Min(8)

ICCont

Amps

Max

(Case)

Watts

@ 25°C

MHz

Min

@ IC

Amp

µs

Max

µs

Max

@ IC

Amp

hFE

Min/Max

PNPNPN

VCEO(sus)

Volts

Min(8)

15 60

TIP3055 TIP2955

5 min 10 2.5 80

150 MJH11018(2) MJH11017(2) 400/15k 10 3 150

200 MJH11020(2) MJH11019(2) 400/15k 10 3 150

250

MJH11022

(2)

MJH11021

(2) 400/15k 10 3 150

400 BUV48 8 min 10 2 0.4 10 150

450

BUV48A

8 min 8 2 0.4 10 150

16 140 MJE4342 MJE4352 15 min 8 1.2 typ 1.2 typ 8 1 125

160

MJE4343 MJE4353

15 min 8 1.2 typ 1.2 typ 8 1 125

20 60 MJH6282(2) MJH6285(2) 750/18k 10 4 125

100

MJH6284

(2)

MJH6287

(2) 750/18k 10 4 125

25 80 TIP35A TIP36A 15/75 15 0.6 typ 0.3 typ 10 3 125

100

BD249C BD250C

10 min 15 3 125

TIP35C TIP36C

15/75 15 0.6 typ 0.3 typ 10 3 125

(2)Darlington

(8)When 2 voltages are given, the format is VCEO(sus)/VCES.

Table 4. Isolated Mounting Hole — Plastic TO–247 Type

Device Type Resistive Switching

ICCont

Amps

Max

VCEO(sus)

Volts

Min

VCES

Volts

Min NPN PNP hFE

Min/Max @ IC

Amp

µs

Max

µs

Max @ IC

Amp

MHz

Min

(Case)

Watts

@ 25°C

10 650 1500

MJW16212

4/10 10 4(3) 0.5(3) 5.5 150

800 1500

MJW16018

4 min 5 4.5 typ 0.2 typ 5 3 typ 150

12 500 1200

MJW16206

5/13 10 2.25 0.25 6.5 3 typ 150

15 450 850

MJW16010

5 min 15 1.2 typ 0.2 typ 10 150

850

MJW16012

7 min 15 0.9 typ 0.15 typ 10 150

500 1000

MJW16010A

5 min 15 3 0.4 10 150

(3)Switching tests performed w/special application simulator circuit. See data sheet for details.

(10)Tested in Applications simulator: see Data Sheet.

Devices listed in bold, italic are Motorola preferred devices.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

CASE 340F

(TO–247 Type)